Blood in Gallium Arsenide . . . 1980 Inst. Phys. Conf. Ser. 56, Ed. Thim, Bristol, p. 251. |
Tong-He et al., Rad. Effects, 77 (1983) 97. |
Donnelly et al., Nucl. High Methods, 182 (1981), p. 553. |
"Deuteron Bombardment of Gallium Arsenide for Device Isolation", IEEE Electron Dev. Lett., vol. EDL-1, No. 5, p. 72 (1980), K. Steeples et al. |
"Optical and Electrical Properties of Proton Bombarded P-Type GaAs", J. Appl. Phys., vol 44, No. 1, Jan. 1973, p. 207, J. C. Dyment et al. |
"Proton Bombardment in InP", Solid-State Electronics, vol. 20, (1977), pp. 727-730, J. P. Donnelly et al. |
"The Electrical Characteristics of Ion Implanted Compound Semiconductors", Nuclear Instruments and Methods, (1981), pp. 553-571, J. P. Donnelly et al. |
"High Resistivity in P-Type InP by Deuteron Bombardment", Appl. Phys. Lett., vol. 42, No. 11, (Jun. 1, 1983), pp. 970-972, M. W. Focht et al. |
"Annealing of Defects in Ion Bombarded Indium Antimonide", Sov. Phys. Semicond., vol. 11, No. 7, (Jul. 1977), pp. 798-800, V. A. Bogatyrev et al. |
"Electrical Properties of Proton and Helium Ion Bombarded GaAs", Report on Research Applications 24(2) (1975), H. Harada, et al. |
"Compensation of N-Type GaAs by Proton Bombardment", Second International Conference Ion Implantation in Semiconductors, Springer-Verlag, Berlin 1971, pp. 212-221, B. R. Pruniaux et al. |