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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

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H01L21/7605between components manufactured in an active substrate comprising AIII BV compounds

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Patents Grantslast 30 patents

Information Patent Grant
Nitride-based semiconductor device and method for manufacturing the...
- Patent number 12,289,904
- Issue date Apr 29, 2025
- INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.
- Yi-Lun Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride-based semiconductor device and method for manufacturing the...
- Patent number 12,289,903
- Issue date Apr 29, 2025
- INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.
- Yi-Lun Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride-based semiconductor device and method for manufacturing the...
- Patent number 12,289,902
- Issue date Apr 29, 2025
- INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.
- Yi-Lun Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-threshold-voltage normally-off high-electron-mobility transist...
- Patent number 12,284,818
- Issue date Apr 22, 2025
- Dalian University of Technology
- Huolin Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Buried field shield in III-V compound semiconductor trench MOSFETs...
- Patent number 12,284,823
- Issue date Apr 22, 2025
- National Technology & Engineering Solutions of Sandia, LLC
- Andrew Binder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Parasitic capacitance reduction in GaN-on-silicon devices
- Patent number 12,266,523
- Issue date Apr 1, 2025
- MACOM Technology Solutions Holdings, Inc.
- Gabriel R. Cueva
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Extrinsic field termination structures for improving reliability of...
- Patent number 12,261,207
- Issue date Mar 25, 2025
- MACOM Technology Solutions Holdings, Inc.
- Allen W. Hanson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistors with dual field plates
- Patent number 12,255,235
- Issue date Mar 18, 2025
- GLOBALFOUNDRIES U.S. Inc.
- Johnatan Avraham Kantarovsky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Type III-V semiconductor device with structured passivation
- Patent number 12,230,700
- Issue date Feb 18, 2025
- Infineon Technologies Austria AG
- Simone Lavanga
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor device
- Patent number 12,211,839
- Issue date Jan 28, 2025
- Rohm Co., Ltd.
- Hirotaka Otake
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride-based semiconductor device and method for manufacturing the...
- Patent number 12,154,980
- Issue date Nov 26, 2024
- INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.
- Yi-Lun Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,027,614
- Issue date Jul 2, 2024
- Kabushiki Kaisha Toshiba
- Hitoshi Kobayashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of manufacturing high electron mobility transistors having...
- Patent number 12,015,075
- Issue date Jun 18, 2024
- MACOM Technology Solutions Holdings, Inc.
- Kyle Bothe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High electron mobility transistors having improved performance
- Patent number 12,009,417
- Issue date Jun 11, 2024
- MACOM Technology Solutions Holdings, Inc.
- Kyle Bothe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Extrinsic field termination structures for improving reliability of...
- Patent number 11,961,888
- Issue date Apr 16, 2024
- MACOM Technology Solutions Holdings, Inc.
- Allen W. Hanson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Circuits and group III-nitride high-electron mobility transistors w...
- Patent number 11,929,428
- Issue date Mar 12, 2024
- Wolfspeed, Inc.
- Thomas J. Smith
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Parasitic capacitance reduction in GaN devices
- Patent number 11,929,364
- Issue date Mar 12, 2024
- MACOM Technology Solutions Holdings, Inc.
- Gabriel R. Cueva
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor device
- Patent number 11,881,479
- Issue date Jan 23, 2024
- Rohm Co., Ltd.
- Hirotaka Otake
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Isolation structure for active devices
- Patent number 11,705,486
- Issue date Jul 18, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Fu-Wei Yao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,621,321
- Issue date Apr 4, 2023
- Mitsubishi Electric Corporation
- Kazuya Konishi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for transferring compound semiconductor single crystal thin...
- Patent number 11,574,839
- Issue date Feb 7, 2023
- Beijing University of Technology
- Zhiyong Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Wafer scale packaging
- Patent number 11,398,402
- Issue date Jul 26, 2022
- AKOUSTIS, INC.
- Jeffrey B. Shealy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor device
- Patent number 11,302,690
- Issue date Apr 12, 2022
- Rohm Co., Ltd.
- Hirotaka Otake
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Parasitic capacitance reduction in GaN-on-silicon devices
- Patent number 11,158,575
- Issue date Oct 26, 2021
- MACOM Technology Solutions Holdings, Inc.
- Gabriel R. Cueva
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Touch sensing circuits and methods for detecting touch events
- Patent number 10,867,993
- Issue date Dec 15, 2020
- Vanguard International Semiconductor Corporation
- Fu-Hsin Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Isolation structure for active devices
- Patent number 10,854,711
- Issue date Dec 1, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd
- Fu-Wei Yao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High power gallium nitride electronics using miscut substrates
- Patent number 10,854,727
- Issue date Dec 1, 2020
- NEXGEN POWER SYSTEMS, INC.
- Isik C. Kizilyalli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Formation of a III-N semiconductor structure
- Patent number 10,818,491
- Issue date Oct 27, 2020
- Imec VZW
- Ming Zhao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device combining passive components with HEMT
- Patent number 10,692,857
- Issue date Jun 23, 2020
- Vanguard International Semiconductor Corporation
- Fu-Hsin Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Compound semiconductor device and fabrication method
- Patent number 10,665,710
- Issue date May 26, 2020
- Fujitsu Limited
- Atsushi Yamada
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHOD FOR PRODUCING SEMICONDUCTOR DEVICE
- Publication number 20250151361
- Publication date May 8, 2025
- SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.
- Yukinori NOSE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR DEVICE
- Publication number 20250120170
- Publication date Apr 10, 2025
- ROHM CO., LTD.
- Hirotaka OTAKE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ISOLATION OF A POWER HEMT FROM OTHER CIRCUITS
- Publication number 20250072102
- Publication date Feb 27, 2025
- Cambridge GaN Devices Limited
- Loizos EFTHYMIOU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EXTRINSIC FIELD TERMINATION STRUCTURES FOR IMPROVING RELIABILITY OF...
- Publication number 20240222444
- Publication date Jul 4, 2024
- MACOM Technology Solutions Holdings, Inc.
- Allen W. Hanson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PARASITIC CAPACITANCE REDUCTION IN GAN-ON-SILICON DEVICES
- Publication number 20240178220
- Publication date May 30, 2024
- MACOM Technology Solutions Holdings, Inc.
- Gabriel R. Cueva
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR DEVICE
- Publication number 20240128263
- Publication date Apr 18, 2024
- Rohm Co., Ltd.
- Hirotaka Otake
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRICALLY PROGRAMMABLE FUSE OVER CRYSTALLINE SEMICONDUCTOR MATER...
- Publication number 20240105595
- Publication date Mar 28, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Johnatan A. Kantarovsky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR SUBSTRATE AND MANUFACTURING METHOD THEREFOR
- Publication number 20240079412
- Publication date Mar 7, 2024
- Shin-Etsu Handotai Co., Ltd.
- Ippei KUBONO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE-BASED SEMICONDUCTOR IC CHIP AND METHOD FOR MANUFACTURING TH...
- Publication number 20240047451
- Publication date Feb 8, 2024
- INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.
- Hui YAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR WITH DIELECTRIC SPACERS AND FIELD PLATE AND METHOD OF FA...
- Publication number 20230361183
- Publication date Nov 9, 2023
- NXP USA, Inc.
- Darrell Glenn Hill
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ISOLATION STRUCTURE FOR ACTIVE DEVICES
- Publication number 20230299133
- Publication date Sep 21, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Fu-Wei Yao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TYPE III-V SEMICONDUCTOR DEVICE WITH STRUCTURED PASSIVATION
- Publication number 20230253486
- Publication date Aug 10, 2023
- Simone Lavanga
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20230215912
- Publication date Jul 6, 2023
- INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.
- Ziming DU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR WITH ALIGNED FIELD PLATE AND METHOD OF FABRICATION THEREFOR
- Publication number 20230207641
- Publication date Jun 29, 2023
- NXP USA, Inc.
- Darrell Glenn Hill
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTORS WITH SELF-ALIGNED SOURCE-CONNECTED FIELD PLATES
- Publication number 20230197795
- Publication date Jun 22, 2023
- NXP USA, Inc.
- Bernhard Grote
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTORS WITH DUAL FIELD PLATES
- Publication number 20230197798
- Publication date Jun 22, 2023
- GLOBALFOUNDRIES U.S. Inc.
- JOHNATAN AVRAHAM KANTAROVSKY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTORS WITH SOURCE-CONNECTED FIELD PLATES
- Publication number 20230197797
- Publication date Jun 22, 2023
- NXP B.V.
- Congyong Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
N-FACE POLAR GAN-BASED DEVICE AND COMPOSITE SUBSTRATE THEREOF, AND...
- Publication number 20230154785
- Publication date May 18, 2023
- ENKRIS SEMICONDUCTOR, INC.
- Kai CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE-BASED SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE...
- Publication number 20230147426
- Publication date May 11, 2023
- INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.
- Yi-Lun CHOU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE-BASED SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE...
- Publication number 20230144369
- Publication date May 11, 2023
- INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.
- Yi-Lun CHOU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COMPLEX FIELD-SHAPING BY FINE VARIATION OF LOCAL MATERIAL DENSITY O...
- Publication number 20230097805
- Publication date Mar 30, 2023
- Intel Corporation
- Samuel James BADER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH ELECTRON MOBILITY TRANSISTORS HAVING IMPROVED PERFORMANCE
- Publication number 20220376099
- Publication date Nov 24, 2022
- Cree, Inc.
- Kyle Bothe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH CONDUCTIVE ELEMENT FORMED OVER DIELECTRIC...
- Publication number 20220376060
- Publication date Nov 24, 2022
- NXP USA, Inc.
- Bernhard Grote
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR WITH SELECTIVE CHANNEL LAYER DOPING
- Publication number 20220376105
- Publication date Nov 24, 2022
- Wolfspeed, Inc.
- Jia Guo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF MANUFACTURING HIGH ELECTRON MOBILITY TRANSISTORS HAVING...
- Publication number 20220376085
- Publication date Nov 24, 2022
- Cree, Inc.
- Kyle Bothe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GROUP III-NITRIDE TRANSISTORS WITH BACK BARRIER STRUCTURES AND BURI...
- Publication number 20220367697
- Publication date Nov 17, 2022
- CREE, INC.
- Christer HALLIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CIRCUITS AND GROUP III-NITRIDE HIGH-ELECTRON MOBILITY TRANSISTORS W...
- Publication number 20220367696
- Publication date Nov 17, 2022
- Cree, Inc.
- Thomas J. SMITH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20220310803
- Publication date Sep 29, 2022
- SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.
- Tadashi WATANABE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20220302294
- Publication date Sep 22, 2022
- Kabushiki Kaisha Toshiba
- Hitoshi KOBAYASHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WAFER SCALE PACKAGING
- Publication number 20220293455
- Publication date Sep 15, 2022
- Akoustis, Inc.
- Jeffrey B. SHEALY
- H01 - BASIC ELECTRIC ELEMENTS

between components manufactured in an active substrate comprising AIII BV compounds

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Nitride-based semiconductor device and method for manufacturing the...

Nitride-based semiconductor device and method for manufacturing the...

Nitride-based semiconductor device and method for manufacturing the...

High-threshold-voltage normally-off high-electron-mobility transist...

Buried field shield in III-V compound semiconductor trench MOSFETs...

Parasitic capacitance reduction in GaN-on-silicon devices

Extrinsic field termination structures for improving reliability of...

Field effect transistors with dual field plates

Type III-V semiconductor device with structured passivation

Nitride semiconductor device

Nitride-based semiconductor device and method for manufacturing the...

Semiconductor device

Methods of manufacturing high electron mobility transistors having...

High electron mobility transistors having improved performance

Extrinsic field termination structures for improving reliability of...

Circuits and group III-nitride high-electron mobility transistors w...

Parasitic capacitance reduction in GaN devices

Nitride semiconductor device

Isolation structure for active devices

Semiconductor device

Method for transferring compound semiconductor single crystal thin...

Wafer scale packaging

Nitride semiconductor device

Parasitic capacitance reduction in GaN-on-silicon devices

Touch sensing circuits and methods for detecting touch events

Isolation structure for active devices

High power gallium nitride electronics using miscut substrates

Formation of a III-N semiconductor structure

Semiconductor device combining passive components with HEMT

Compound semiconductor device and fabrication method

Patents Applicationslast 30 patents

METHOD FOR PRODUCING SEMICONDUCTOR DEVICE

NITRIDE SEMICONDUCTOR DEVICE

ISOLATION OF A POWER HEMT FROM OTHER CIRCUITS

EXTRINSIC FIELD TERMINATION STRUCTURES FOR IMPROVING RELIABILITY OF...

PARASITIC CAPACITANCE REDUCTION IN GAN-ON-SILICON DEVICES

NITRIDE SEMICONDUCTOR DEVICE

ELECTRICALLY PROGRAMMABLE FUSE OVER CRYSTALLINE SEMICONDUCTOR MATER...

NITRIDE SEMICONDUCTOR SUBSTRATE AND MANUFACTURING METHOD THEREFOR

NITRIDE-BASED SEMICONDUCTOR IC CHIP AND METHOD FOR MANUFACTURING TH...

TRANSISTOR WITH DIELECTRIC SPACERS AND FIELD PLATE AND METHOD OF FA...

ISOLATION STRUCTURE FOR ACTIVE DEVICES

TYPE III-V SEMICONDUCTOR DEVICE WITH STRUCTURED PASSIVATION

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

TRANSISTOR WITH ALIGNED FIELD PLATE AND METHOD OF FABRICATION THEREFOR

TRANSISTORS WITH SELF-ALIGNED SOURCE-CONNECTED FIELD PLATES

FIELD EFFECT TRANSISTORS WITH DUAL FIELD PLATES

TRANSISTORS WITH SOURCE-CONNECTED FIELD PLATES

N-FACE POLAR GAN-BASED DEVICE AND COMPOSITE SUBSTRATE THEREOF, AND...

NITRIDE-BASED SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE...

NITRIDE-BASED SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE...

COMPLEX FIELD-SHAPING BY FINE VARIATION OF LOCAL MATERIAL DENSITY O...

HIGH ELECTRON MOBILITY TRANSISTORS HAVING IMPROVED PERFORMANCE

SEMICONDUCTOR DEVICE WITH CONDUCTIVE ELEMENT FORMED OVER DIELECTRIC...

FIELD EFFECT TRANSISTOR WITH SELECTIVE CHANNEL LAYER DOPING

METHODS OF MANUFACTURING HIGH ELECTRON MOBILITY TRANSISTORS HAVING...

GROUP III-NITRIDE TRANSISTORS WITH BACK BARRIER STRUCTURES AND BURI...

CIRCUITS AND GROUP III-NITRIDE HIGH-ELECTRON MOBILITY TRANSISTORS W...

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE

WAFER SCALE PACKAGING