Vertical DMOS transistors

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H01L29/66712

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

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H01L29/66712Vertical DMOS transistors

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device and method for manufacturing the same
- Patent number 12,224,313
- Issue date Feb 11, 2025
- Kabushiki Kaisha Toshiba
- Yuhki Fujino
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor transistor device having a titled body contact area a...
- Patent number 12,166,080
- Issue date Dec 10, 2024
- Infineon Technologies Austria AG
- Li Juin Yip
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Super junction power device and method of making the same
- Patent number 12,154,943
- Issue date Nov 26, 2024
- SiEn (QingDao) Integrated Circuits Co., Ltd
- Min-Hwa Chi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOSFET device with undulating channel
- Patent number 12,125,884
- Issue date Oct 22, 2024
- SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Kevin Kyuheon Cho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical semiconductor device with improved ruggedness
- Patent number 12,087,854
- Issue date Sep 10, 2024
- Wolfspeed, Inc.
- Daniel Jenner Lichtenwalner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor die and method of manufacturing the same
- Patent number 12,080,789
- Issue date Sep 3, 2024
- Infineon Technologies Austria AG
- Oliver Blank
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gradient doping epitaxy in superjunction to improve breakdown voltage
- Patent number 12,074,196
- Issue date Aug 27, 2024
- Applied Materials, Inc.
- Ashish Pal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and semiconductor device manufacturing method
- Patent number 12,074,215
- Issue date Aug 27, 2024
- Lapis Semiconductor Co., Ltd.
- Tomomi Yamanobe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for manufacturing same
- Patent number 12,068,411
- Issue date Aug 20, 2024
- Nissan Motor Co., Ltd.
- Toshiharu Marui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for fabricating the same
- Patent number 12,062,577
- Issue date Aug 13, 2024
- SK Hynix Inc.
- Jae Man Yoon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Charge balance semiconductor device, in particular for high efficie...
- Patent number 12,057,474
- Issue date Aug 6, 2024
- STMicroelectronics S.r.l.
- Antonino Schillaci
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Superjunction transistor device and method for forming a superjunct...
- Patent number 12,034,040
- Issue date Jul 9, 2024
- Infineon Technologies Austria AG
- Hans Weber
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical MOSFET having a high resistance region
- Patent number 12,009,390
- Issue date Jun 11, 2024
- Fuji Electric Co., Ltd.
- Katsunori Ueno
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Edge termination for power semiconductor devices and related fabric...
- Patent number 12,009,389
- Issue date Jun 11, 2024
- Wolfspeed, Inc.
- Woongsun Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Superjunction semiconductor device and method of manufacturing same
- Patent number 12,009,419
- Issue date Jun 11, 2024
- DB HiTek, Co., Ltd.
- Yong Sin Han
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Super junction semiconductor device and method of manufacturing the...
- Patent number 12,002,849
- Issue date Jun 4, 2024
- DB HITEK CO., LTD.
- Jong Min Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device for high voltage applications
- Patent number 11,996,441
- Issue date May 28, 2024
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Bong Woong Mun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 11,990,527
- Issue date May 21, 2024
- Hyundai Motor Company
- Junghee Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor device, power converter, and method o...
- Patent number 11,984,492
- Issue date May 14, 2024
- Mitsubishi Electric Corporation
- Yuji Ebiike
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Parallel structure, method of manufacturing the same, and electroni...
- Patent number 11,942,474
- Issue date Mar 26, 2024
- Institute of Microelectronics, Chinese Academy of Sciences
- Huilong Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical field effect transistor device and method of fabrication
- Patent number 11,942,537
- Issue date Mar 26, 2024
- Odyssey Semiconductor, Inc.
- James R. Shealy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Superjunction transistor device
- Patent number 11,929,395
- Issue date Mar 12, 2024
- Infineon Technologies Austria AG
- Hans Weber
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,908,912
- Issue date Feb 20, 2024
- Kabushiki Kaisha Toshiba
- Tatsuya Nishiwaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical power devices fabricated using implanted methods
- Patent number 11,894,455
- Issue date Feb 6, 2024
- Wolfspeed, Inc.
- Daniel Jenner Lichtenwalner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing a superjunction device
- Patent number 11,894,445
- Issue date Feb 6, 2024
- Infineon Technologies Austria AG
- Daniel Tutuc
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power MOSFET with improved safe operating area
- Patent number 11,888,060
- Issue date Jan 30, 2024
- SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Prasad Venkatraman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-nitride transistor with a modified drain access region
- Patent number 11,876,130
- Issue date Jan 16, 2024
- Finwave Semiconductor, Inc.
- Bin Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method of semiconductor device
- Patent number 11,784,223
- Issue date Oct 10, 2023
- Denso Corporation
- Hirofumi Kida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reverse recovery charge reduction in semiconductor devices
- Patent number 11,776,997
- Issue date Oct 3, 2023
- Semiconductor Components Industries, LLC
- Shengling Deng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power transistor with soft recovery body diode
- Patent number 11,769,827
- Issue date Sep 26, 2023
- Wolfspeed, Inc.
- Kijeong Han
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SENSE TRANSISTOR WITH LOWER SPREADING RESISTANCE
- Publication number 20250048721
- Publication date Feb 6, 2025
- TEXAS INSTRUMENTS INCORPORATED
- Eung Jung Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH MOSFET AND MANUFACTURING METHOD THEREOF
- Publication number 20250048673
- Publication date Feb 6, 2025
- Hangzhou Silicon-Magic Semiconductor Technology Co., Ltd.
- Jian Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MANUFACTURING PROCESS FOR SILICON CARBIDE POWER DEVICES WITH VARIAB...
- Publication number 20250043460
- Publication date Feb 6, 2025
- STMicroelectronics International N.V.
- Cateno Marco CAMALLERI
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SI...
- Publication number 20250022953
- Publication date Jan 16, 2025
- Fuji Electric Co., Ltd.
- Takafumi UCHIDA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER SEMICONDUCTOR DEVICE, POWER SEMICONDUCTOR MODULE, POWER CONVE...
- Publication number 20250022949
- Publication date Jan 16, 2025
- LX Semicon Co., Ltd.
- Seungwook SONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power Semiconductor Device and Method of Producing a Power Semicond...
- Publication number 20250015126
- Publication date Jan 9, 2025
- Infineon Technologies Austria AG
- Tobias Nardmann
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Dual-Thickness Active Area Architecture for SOI FETS
- Publication number 20240429239
- Publication date Dec 26, 2024
- pSemi Corporation
- Jagar Singh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NEXFET NGEN3.2 MV DUAL SHIELD OXIDE DAMAGE SOLUTION
- Publication number 20240429290
- Publication date Dec 26, 2024
- TEXAS INSTRUMENTS INCORPORATED
- Ya Ping Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SINTERED BODY, SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR DEVICE, AND M...
- Publication number 20240413208
- Publication date Dec 12, 2024
- Rohm Co., Ltd.
- Takuji MAEKAWA
- C30 - CRYSTAL GROWTH
Information Patent Application
BACKSIDE CONTACT
- Publication number 20240395938
- Publication date Nov 28, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Li-Zhen Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20240387641
- Publication date Nov 21, 2024
- Fuji Electric Co., Ltd.
- Yuki OHUCHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SPLIT-GATE MOSFETS INTEGRATING HIGH-SPEED FREEWHEEL...
- Publication number 20240387722
- Publication date Nov 21, 2024
- NOVUS SEMICONDUCTORS CO., LTD.
- Hang GU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20240379843
- Publication date Nov 14, 2024
- HON HAI PRECISION INDUSTRY CO., LTD.
- Yi-Kai HSIAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CHARGE BALANCE SEMICONDUCTOR DEVICE, IN PARTICULAR FOR HIGH EFFICIE...
- Publication number 20240379742
- Publication date Nov 14, 2024
- STMicroelectronics S.r.l.
- Antonino SCHILLACI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR PRODUCING A VERTICAL FIELD-EFFECT TRANSISTOR STRUCTURE A...
- Publication number 20240371928
- Publication date Nov 7, 2024
- ROBERT BOSCH GmbH
- Daniel Krebs
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE, MANUFACTURING METHOD THEREOF, POWER CONVERSIO...
- Publication number 20240347613
- Publication date Oct 17, 2024
- Huawei Digital Power Technologies Co., Ltd.
- Kimimori HAMADA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MOSFET WITH DISTRIBUTED DOPED P-SHIELD ZONES UNDER TRENCHES HAVING...
- Publication number 20240347585
- Publication date Oct 17, 2024
- MaxPower Semiconductor, Inc.
- Jun Zeng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUPERJUNCTION TRANSISTOR DEVICE
- Publication number 20240321953
- Publication date Sep 26, 2024
- Infineon Technologies Austria AG
- Hans Weber
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20240321638
- Publication date Sep 26, 2024
- Kabushiki Kaisha Toshiba
- Takeyuki SUZUKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DIE WITH A VERTICAL DEVICE
- Publication number 20240313105
- Publication date Sep 19, 2024
- Infineon Technologies Austria AG
- Gerhard Thomas Nöbauer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF
- Publication number 20240313089
- Publication date Sep 19, 2024
- Fuji Electric Co., Ltd.
- Ryo TANAKA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL MOSFET DEVICE AND METHOD OF MANUFACTURING VERTICAL MOSFET...
- Publication number 20240313103
- Publication date Sep 19, 2024
- Beijing Superstring Academy of Memory Technology
- Huilong Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING NITRIDE SE...
- Publication number 20240304674
- Publication date Sep 12, 2024
- DENSO CORPORATION
- Kazuki IKEYAMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING
- Publication number 20240297220
- Publication date Sep 5, 2024
- Kabushiki Kaisha Toshiba
- Masatsugu NAGAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IMPACT-RESISTANT SUPER JUNCTION DEVICE AND PREPARING METHOD THEREOF
- Publication number 20240297219
- Publication date Sep 5, 2024
- CHONGQING ALPHA AND OMEGA SEMICONDUCTOR LIMITED
- XIAO FENG QIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EDGE TERMINATION FOR POWER SEMICONDUCTOR DEVICES AND RELATED FABRIC...
- Publication number 20240290832
- Publication date Aug 29, 2024
- Wolfspeed, Inc.
- Woongsun Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SEMICONDUCTOR...
- Publication number 20240282849
- Publication date Aug 22, 2024
- DENSO CORPORATION
- Takaya SHIMONO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON SUPER JUNCTION STRUCTURES FOR INCREASED THROUGHPUT
- Publication number 20240282813
- Publication date Aug 22, 2024
- Applied Materials, Inc.
- Amirhasan Nourbakhsh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER MOSFET DEVICE WITH PROTECTION AGAINST THE CONTAMINANTS AND RE...
- Publication number 20240258422
- Publication date Aug 1, 2024
- STMicroelectronics International N.V.
- Cateno Marco CAMALLERI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMBRANE SEMICONDUCTOR COMPONENT AND METHOD FOR PRODUCING THE SAME
- Publication number 20240243170
- Publication date Jul 18, 2024
- ROBERT BOSCH GmbH
- Christian Huber
- H01 - BASIC ELECTRIC ELEMENTS

Vertical DMOS transistors

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Semiconductor device and method for manufacturing the same

Semiconductor transistor device having a titled body contact area a...

Super junction power device and method of making the same

MOSFET device with undulating channel

Vertical semiconductor device with improved ruggedness

Semiconductor die and method of manufacturing the same

Gradient doping epitaxy in superjunction to improve breakdown voltage

Semiconductor device and semiconductor device manufacturing method

Semiconductor device and method for manufacturing same

Semiconductor device and method for fabricating the same

Charge balance semiconductor device, in particular for high efficie...

Superjunction transistor device and method for forming a superjunct...

Vertical MOSFET having a high resistance region

Edge termination for power semiconductor devices and related fabric...

Superjunction semiconductor device and method of manufacturing same

Super junction semiconductor device and method of manufacturing the...

Semiconductor device for high voltage applications

Semiconductor device and method of manufacturing the same

Silicon carbide semiconductor device, power converter, and method o...

Parallel structure, method of manufacturing the same, and electroni...

Vertical field effect transistor device and method of fabrication

Superjunction transistor device

Semiconductor device

Vertical power devices fabricated using implanted methods

Method for producing a superjunction device

Power MOSFET with improved safe operating area

III-nitride transistor with a modified drain access region

Semiconductor device and manufacturing method of semiconductor device

Reverse recovery charge reduction in semiconductor devices

Power transistor with soft recovery body diode

Patents Applicationslast 30 patents

SENSE TRANSISTOR WITH LOWER SPREADING RESISTANCE

TRENCH MOSFET AND MANUFACTURING METHOD THEREOF

MANUFACTURING PROCESS FOR SILICON CARBIDE POWER DEVICES WITH VARIAB...

SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SI...

POWER SEMICONDUCTOR DEVICE, POWER SEMICONDUCTOR MODULE, POWER CONVE...

Power Semiconductor Device and Method of Producing a Power Semicond...

Dual-Thickness Active Area Architecture for SOI FETS

NEXFET NGEN3.2 MV DUAL SHIELD OXIDE DAMAGE SOLUTION

SINTERED BODY, SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR DEVICE, AND M...

BACKSIDE CONTACT

NITRIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

SILICON CARBIDE SPLIT-GATE MOSFETS INTEGRATING HIGH-SPEED FREEWHEEL...

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

CHARGE BALANCE SEMICONDUCTOR DEVICE, IN PARTICULAR FOR HIGH EFFICIE...

METHOD FOR PRODUCING A VERTICAL FIELD-EFFECT TRANSISTOR STRUCTURE A...

SEMICONDUCTOR DEVICE, MANUFACTURING METHOD THEREOF, POWER CONVERSIO...

MOSFET WITH DISTRIBUTED DOPED P-SHIELD ZONES UNDER TRENCHES HAVING...

SUPERJUNCTION TRANSISTOR DEVICE

METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

SEMICONDUCTOR DIE WITH A VERTICAL DEVICE

NITRIDE SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF

VERTICAL MOSFET DEVICE AND METHOD OF MANUFACTURING VERTICAL MOSFET...

NITRIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING NITRIDE SE...

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING

IMPACT-RESISTANT SUPER JUNCTION DEVICE AND PREPARING METHOD THEREOF

EDGE TERMINATION FOR POWER SEMICONDUCTOR DEVICES AND RELATED FABRIC...

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SEMICONDUCTOR...

SILICON SUPER JUNCTION STRUCTURES FOR INCREASED THROUGHPUT

POWER MOSFET DEVICE WITH PROTECTION AGAINST THE CONTAMINANTS AND RE...

MEMBRANE SEMICONDUCTOR COMPONENT AND METHOD FOR PRODUCING THE SAME