Claims
- 1. A radiation-emitting semiconductor component, comprising:
a multilayer structure including an active layer for generating radiation in said multilayer structure; electrical contacts connected to said active layer; a radiation-transmissive window with a first main surface adjoining said multilayer structure and a second main surface opposite said first main surface; said second main surface having at least one void selected from the group consisting of a trench recess and a pit recess formed therein for increasing a coupling-out of radiation from said window.
- 2. The semiconductor component according to claim 1, wherein said window is formed with side surfaces perpendicular to said first and second main surfaces.
- 3. The semiconductor component according to claim 1, wherein said window is formed with side surfaces having partial regions orthogonal to said first and second main surfaces.
- 4. The semiconductor component according to claim 1, wherein said window has an enveloping basic shape selected from the group consisting of parallelepiped shapes and cuboid shapes.
- 5. The semiconductor component according to claim 1, wherein said void has at least one planar side surface enclosing an angle different from 90° with said second main surface.
- 6. The semiconductor component according to claim 5, wherein said angle is between 20° and 70 .
- 7. The semiconductor component according to claim 1, wherein said void has a bottom surface substantially parallel to said second main surface.
- 8. The semiconductor component according to claim 1, wherein said void is a trench recess formed with a triangular or trapezoidal cross section tapering toward said first main surface.
- 9. The semiconductor component according to claim 1, wherein said at least one void is one of a plurality of trench recesses formed in said window.
- 10. The semiconductor component according to claim 1, wherein said void is bounded by at least one curved surface.
- 11. The semiconductor component according to claim 10, wherein said void has a form substantially describing a hemisphere, a sphere segment, an ellipsoid segment, a cone, or a truncated cone.
- 12. The semiconductor component according to claim 1, wherein said window has a refractive index greater than a refractive index of said multilayer structure.
- 13. The semiconductor component according to claim 1, wherein said window contains a material selected from the group consisting of sapphire, quartz glass, diamond, ITO, SnO, ZnO, InO, SiC, and GaP.
- 14. The semiconductor component according to claim 1, wherein said multilayer structure is based on GaN.
- 15. The semiconductor component according to claim 14, wherein said multilayer structure contains at least one gallium compound selected from the group consisting of GaN, Al1-xGaxN (0≦x≦1), In1-xGaxN (0≦x≦1), and Al1-x-yInxGayN (0≦x≦1), 0≦y≦1).
- 16. The semiconductor component according to claim 1, wherein said multilayer structure is an epitaxy product.
- 17. The semiconductor component according to claim 16, wherein said multilayer structure is deposited on an epitaxial substrate and said window is produced from said epitaxial substrate.
- 18. The semiconductor component according to claim 1, wherein said window is connected to said multilayer structure by a wafer bonding process.
- 19. A method for producing a semiconductor component, the method which comprises the following steps:
providing a window layer having a first main surface and a second main surface opposite the first main surface; applying a semiconductor layer sequence to the first main surface of the window layer; forming at least one recess in the window layer from the second main surface; and completing the semiconductor component according to claim 1.
- 20. The method according to claim 19, which comprises depositing the semiconductor layer sequence on the window layer by epitaxy.
- 21. The method according to claim 19, which comprises applying the semiconductor layer sequence to the window layer in a wafer bonding process.
- 22. The method according to claim 19, which comprises forming the recess by sawing into the window layer on the second main surface.
- 23. The method according to claim 22, which comprises sawing with a saw blade having a shaping edge.
- 24. The method according to claim 23, which comprises sawing with a saw blade having a trapezoidal cross section in a sawing region.
- 25. The method according to claim 19, which comprises etching the recess into the second main surface.
- 26. The method according to claim 19, which comprises forming the recess with a laser ablation process.
Priority Claims (1)
Number |
Date |
Country |
Kind |
101 11 501.6 |
Mar 2001 |
DE |
|
CROSS-REFERENCE TO RELATED APPLICATION:
[0001] This application is a continuation of copending International Application No. PCT/DE02/00514, filed Feb. 13, 2002, which designated the United States and which was not published in English.
Continuations (1)
|
Number |
Date |
Country |
Parent |
PCT/DE02/00514 |
Feb 2002 |
US |
Child |
10657841 |
Sep 2003 |
US |