Number | Name | Date | Kind |
---|---|---|---|
4786960 | Jeuch | Nov 1988 |
Number | Date | Country |
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59-259152 | Jun 1986 | JPX |
Entry |
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"Characterization of the Lateral and Vertical Parasitic Transistors in a Trench Isolated CMOS Process", M. C. Roberts et al., pp. 411-412. |
"Mosfet Achieved by a Combination of Polysilicon Sidewall and Simox Technology", T. Ohno et al., Electronic Letters, pp. 559-560, May 1986. |