Patent Application
20120018642
This invention relates to a novel radiographic image detector. The radiographic image detector can be used preferably in medical fields such as positron emission tomography and X-ray CT, industrial fields such as various nondestructive tests, and security fields such as radiation monitors and inspection of personal belongings.
Radiation application technologies (i.e., technologies utilizing radiation) cover a wide range of fields, including medical fields such as positron emission tomography and X-ray CT, industrial fields such as various nondestructive tests, and security fields such as radiation monitors and inspection of personal belongings, and are making marked progress even now.
Radiographic image detectors are constituent technologies occupying an important position in the radiation application technologies. With the progress of the radiation application technologies, the radiographic image detectors are required to achieve higher performance in connection with detection sensitivity, position resolution on the incident position of radiation, or count rate characteristic. As the radiation application technologies find widespread use, cost reduction and an increased sensitive volume are also demanded of the radiographic image detectors.
To fulfill the above demands made on the radiographic image detectors, a particle beam image detector using gas multiplication (may be called amplification) by a pixel electrode has been developed (see Patent Document 1). The particle beam image detector allows an incident particle beam to ionize gas molecules, thereby producing electrons, and detects the electrons by the pixel electrode. The particle beam image detector is advantageous in that it is excellent in position resolution and count rate characteristic, can easily increase the sensitive volume, and can be manufactured inexpensively. However, the gas used therein has a low atomic weight, and thus shows low stopping power against photons having high energy, such as hard X-rays and gamma rays. The particle beam image detector, therefore, posed the problem of low detection sensitivity to these photons.
In the light of such problems, the present inventors have already proposed a method comprising converting incident radiation into ultraviolet rays with the use of a scintillator composed of a chemical substance having a large atomic weight, and detecting the ultraviolet rays by a gas multiplication detector having position resolution (see Patent Document 2). An attempt to detect radiation by a similar method has also been made by other people (see Non-Patent Document 1). With these methods, however, the ultraviolet rays produced by the scintillator ionize gas molecules to generate electrons, and the resulting electrons are detected. Thus, the range (i.e., the travel distance before energy loss) of the ultraviolet rays covers an extent corresponding to the thickness of a gas layer. Consequently, such detectors, when used as radiographic image detectors, have posed the problem of declining in position resolution and count rate characteristic. Since chemically unstable gas molecules need to be used, moreover, the problem has occurred that the gas molecules themselves deteriorate, or the gas molecules deposit on the electrode of the detector. These problems have posed difficulty in operating the detectors stably for a long term (see Non-Patent Document 2).
Another attempt has been made at a method for detecting ultraviolet rays produced from radiation by a scintillator, the method comprising converting the ultraviolet rays into electrons with the use of a photoelectric conversion substance, and detecting the electrons by a gas multiplication detector (see Non-Patent Document 3). According to this method, the above-mentioned decreases in position resolution and count rate characteristic and the problem about the stability of operation are considered to be avoidable, but it has been unsuccessful to sufficiently increase a multiplication factor in multiplying or amplifying the electrons by the gas multiplication detector. As a result, very feeble ultraviolet rays generated from the scintillator have not been detectable with satisfactory sensitivity. To date, there have been no attempts to prepare an apparatus which can detect a radiographic image by such a method using a photoelectric conversion substance.
It is an object of the present invention to provide a radiographic image detector which can detect radiation, such as hard X-rays or γ-rays, with high sensitivity and which is excellent in position resolution and count rate characteristic, the radiographic image detector being composed of a combination of a scintillator for converting incident radiation into ultraviolet rays, and a novel gas multiplication ultraviolet image detector for converting ultraviolet rays into electrons, amplifying such electrons, and detecting the amplified electrons.
The present inventors have paid attention to a gas multiplication ultraviolet image detector constituting a radiographic image detector, and conducted extensive studies on a method for detecting very feeble ultraviolet rays, which are produced by a scintillator, with satisfactory sensitivity.
As a result, they have found that using a gas multiplication ultraviolet image detector composed of a photoelectric conversion substance, a gas electron multiplier, and a pixel electrode, ultraviolet rays produced by a scintillator are converted into electrons by the photoelectric conversion substance, and then the electrons are amplified by the gas electron multiplier, and then the amplified electrons are detected with the use of the pixel electrode, whereby radiation can be detected with satisfactory sensitivity. They have also succeeded in obtaining a radiographic image by a radiographic image detector comprising a combination of the scintillator and the gas multiplication ultraviolet image detector. This success has led them to accomplish the present invention.
That is, according to the present invention, there is provided a radiographic image detector including a scintillator for converting incident radiation into ultraviolet rays, and a gas multiplication ultraviolet image detector, wherein the gas multiplication ultraviolet image detector is composed of a photoelectric conversion substance, a gas electron multiplier, and a pixel electrode.
In the above invention of the radiographic image detector, it is preferred that
According to the present invention, extremely feeble ultraviolet rays produced upon conversion from radiation by the scintillator can be detected with high sensitivity. Thus, a radiographic image detector excellent in position resolution and count rate characteristic can be provided. Moreover, the radiographic image detector of the present invention can easily upsize the sensitive volume, and can be manufactured at a low cost. Hence, the radiographic image detector of the present invention is of immense value in the fields of medicine, industry, security, etc.
The operating principle of the radiographic image detector according to the present invention will be described using
As the scintillator which is a constituent element of the radiographic image detector of the present invention, any scintillator producing ultraviolet rays upon entry of radiation can be used without limitation. In the light of the efficiency of photoelectric conversion from ultraviolet rays into electrons in the photoelectric conversion substance, however, it is particularly preferred to use a scintillator which produces vacuum ultraviolet rays with a wavelength of 200 nm or less among ultraviolet rays.
By selecting the scintillator used, in accordance with the type of radiation to be detected, any radiation such as X-rays, α-rays, β-rays, γ-rays or neutron beam becomes detectable. In particular, the scintillator comprising a chemical substance having a high atomic weight is preferred, because it can efficiently detect photons of high energy, such as hard X-rays or γ-rays, among radiations.
In order to allow the ultraviolet rays, produced by the entry of radiation, to exit without being absorbed by the scintillator itself, it is preferred to use a scintillator which minimally absorbs ultraviolet rays. Examples of such a scintillator minimally absorbing ultraviolet rays include scintillators composed of metal fluorides to be described later; metal oxides such as alumina (Al2O3), yttrium aluminate (YAlO3) and lutetium aluminate (Lu3Al5O12); metal phosphates such as lutetium phosphate (LuPO4) and yttrium phosphate (YPO4); or some metal borates.
The forms of these scintillators are not limited, and any forms such as crystal, glass and ceramic can be used as appropriate. From the viewpoint of the efficiency of conversion from radiation into ultraviolet rays, the use of a crystal is preferred.
As the scintillator which produces the vacuum ultraviolet rays, the metal fluoride can be used preferably. Since vacuum ultraviolet rays have the property of being absorbed by many materials, the problem occurs that vacuum ultraviolet rays generated by the entry of radiation are absorbed by the scintillator itself. However, the metal fluoride, as an exception, has the property of minimally absorbing vacuum ultraviolet rays, and thus can be used preferably in the present invention.
The type of the metal fluoride is not limited, and any publicly known metal fluorides can be used as the scintillator producing vacuum ultraviolet rays. Concretely, the following metal fluorides are named as examples: lithium fluoride, magnesium fluoride, calcium fluoride, scandium fluoride, titanium fluoride, chromium fluoride, manganese fluoride, iron fluoride, cobalt fluoride, nickel fluoride, copper fluoride, zinc fluoride, gallium fluoride, germanium fluoride, aluminum fluoride, strontium fluoride, yttrium fluoride, zirconium fluoride, barium fluoride, lanthanum fluoride, cerium fluoride, praseodymium fluoride, neodymium fluoride, europium fluoride, gadolinium fluoride, terbium fluoride, erbium fluoride, thulium fluoride, ytterbium fluoride, lutetium fluoride, hafnium fluoride, tantalum fluoride, and lead fluoride.
In the present invention, it is preferred that compounds containing luminescence center elements, which generate radiative transition in the ultraviolet region, be used as the scintillator. Any luminescence center elements may be used without limitation, as long as they show emission of ultraviolet rays by radiative transition. The luminescence center elements, which exhibit 5d-4f transition light emission due to electron transition from 5d level to 4f level, are particularly preferred, because they have a short light emission lifetime and a fast response. As such luminescence center elements exhibiting 5d-4f transition light emission, praseodymium (Pr), neodymium (Nd), erbium (Er) and thulium (Tm) can be used preferably.
In the scintillator containing the luminescence center element, the content of the luminescence center element varies according to the type of the scintillator or the type of the luminescence center element, but usually, a content in the range of 0.005 to 20 wt. % is preferred. By setting the amount of the luminescence center element added at 0.005 wt. % or more, the intensity of light emission of the scintillator can be enhanced. By setting this amount at 20 wt. % or less, on the other hand, attenuation of light emission by the scintillator ascribed to concentration quenching can be suppressed.
The preferred scintillator containing the luminescence center element is exemplified by crystals comprising the aforementioned metal fluorides, metal oxides, or metal phosphates, the crystals containing the luminescence center element exhibiting the aforesaid 5d-4f transition light emission.
In the present invention, it is preferred to use the scintillator comprising a chemical substance having a high density and a high effective atomic number, in order to enhance the detection sensitivity to photons of high energy, such as hard X-rays or γ-rays. The effective atomic number is an indicator defined by the equation [1] shown below, and affects the stopping power against hard X-rays or γ-rays. The higher the effective atomic number is, the greater the stopping power against hard X-rays or γ-rays becomes. As a result, the sensitivity of the scintillator to hard X-rays or γ-rays increases.
Effective atomic number=(ΣWiZi4)1/4 [1]
where Wi and Zi denote, respectively, the mass fraction and atomic number of the i-th element of the elements constituting the scintillator.
The shape of the scintillator is not limited. Preferably, however, the scintillator has an ultraviolet emergence surface opposing a gas multiplication ultraviolet image detector to be described later (may hereinafter be referred to simply as an ultraviolet emergence surface), and the ultraviolet emergence surface has been optically polished. By providing such an ultraviolet emergence surface, ultraviolet rays produced by the scintillator can be efficiently entered into the gas multiplication ultraviolet image detector.
The shape of the ultraviolet emergence surface is not limited, and shapes conformed to uses can be suitably selected, such as a square shape several millimeters to several hundred millimeters square, and a circular shape of several millimeters to several hundred millimeters in diameter. The thickness, in the direction of incidence of radiation, of the scintillator varies with the type and energy of the radiation to be detected, but generally, is several hundred micrometers to several hundred millimeters.
Application of an ultraviolet reflective coating or film, which comprises aluminum or Teflon, to a surface not opposing the gas multiplication ultraviolet image detector is preferred, because dissipation of ultraviolet rays produced by the scintillator can be prevented. By using an array of many of the scintillators coated with the ultraviolet reflective film, moreover, the position resolution of the radiographic image detector can be enhanced remarkably.
The method for manufacturing the scintillator is not limited, and the scintillator can be manufactured by a publicly known manufacturing method. In manufacturing a metal fluoride crystal which is the preferred scintillator in the present invention, it is preferred to manufacture it by the melt growth method such as Czochralski method or Bridgman method. Manufacture by the melt growth method enables a metal fluoride crystal excellent in quality, such as transparency, to be produced. Moreover, a large crystal having a diameter of several inches can be produced at a low cost.
In order to eliminate a crystal defect due to thermal strain or the like in the manufacture of the metal fluoride crystal, annealing may be performed after the manufacture of the crystal. The resulting metal fluoride crystal has satisfactory processability and, after being processed into a desired shape, is used as a scintillator. For its processing, a cutter such as a blade saw or a wire saw, a grinder or an abrasive wheel, which is publicly known, can be used without limitation.
The gas multiplication ultraviolet image detector included in the radiographic image detector of the present invention is basically constituted by a photoelectric conversion substance, a gas electron multiplier, and a pixel electrode. The gas multiplication ultraviolet image detector will be described concretely below.
The photoelectric conversion substance functions to convert ultraviolet rays, which have been produced by the scintillator, into primary electrons. The photoelectric conversion substance is not limited in type, if it has the above function. Concretely, cesium iodide (CsI) and cesium telluride (CsTe) can be named as examples. Of them, cesium iodide is preferred from the viewpoint of the efficiency of photoelectric conversion in converting ultraviolet rays into electrons, and the viewpoint of chemical stability.
The photoelectric conversion substance is preferably in the form of a thin film for the purpose of efficient withdrawal of primary electrons converted from ultraviolet rays. As will be described later, moreover, it is preferred that the photoelectric conversion substance thin film be formed on the inner surface of an ultraviolet entrance window, or be formed on a surface of the gas electron multiplier opposing the ultraviolet entrance window.
Then, the primary electrons produced by the photoelectric conversion substance are amplified by a gas electron multiplier. The gas electron multiplier was developed by Sauli in 1997, and is known as GEM. In the present invention, the technology described, for example, in JP-A-2006-302844 or JP-A-2007-234485 can be used preferably as the gas electron multiplier. Hereinbelow, the gas electron multiplier used in the present invention will be described in detail with the use of
The gas electron multiplier is composed of a plate-shaped multilayer body constituted by a plate-shaped insulating layer 12 formed from resin, and planar metal layers 13 coated on both surfaces of the plate-shaped insulating layer; and through-holes 14 provided in the plate-shaped multilayer body and each having an inner wall perpendicular to the flat surfaces of the metal layers. In the gas electron multiplier, a predetermined applied voltage is applied to the metal layers to generate an electric field inside the through-holes. By so doing, the primary electrons entering the interior of the through-hole structure are accelerated to cause an electron avalanche phenomenon, and they are amplified to become many secondary electrons while retaining position information. The material for the plate-shaped insulating layer is preferably a polyimide, a liquid crystal polymer or the like in view of the processability and mechanical strength.
The larger the thickness (Di in
The diameter (d in
In the operation of the gas electron multiplier, the higher the applied voltage is, the higher multiplication factor is obtained. If the applied voltage is extremely high, however, discharge occurs between the metal layers on the face and back of the gas electron multiplier, making a stable operation difficult. The preferred range of the applied voltage varies with the thickness of the plate-shaped insulating layer, but is generally 200V to 1,000V. The multiplication factor obtained at such an applied voltage is generally several tens to several thousands.
Secondary electrons amplified by the gas electron multiplier are further amplified and detected using a pixel electrode. The pixel electrode is disclosed in detail in the aforementioned Patent Document 1, and thus may be prepared in accordance with the technology disclosed therein.
Concretely, the pixel electrode includes anode strips formed on the back of a double-sided substrate, cylindrical anode electrodes planted in the anode strips and each having an upper end surface exposed at the face of the double-sided substrate, and strip-shaped cathode electrodes each having holes formed around the upper end surfaces of the cylindrical anode electrodes. The anode strips each preferably have a width of 200 μm to 400 μm. Particularly preferably, the anode strips are arranged at intervals of 400 μm, the strip-shaped cathode electrodes each have the holes with a diameter of 200 to 300 μm formed at constant intervals, and the cylindrical anode electrodes each have a diameter of 40 to 60 μm and a height of 50 to 150 μm.
By applying a predetermined applied voltage between the cylindrical anode electrode and the strip-shaped cathode electrode of the pixel electrode, a strong electric field occurs in the vicinity of the cylindrical anode electrode. Secondary electrons accelerated by this electric field undergo an electron avalanche and, after being amplified, they are detected by the cylindrical anode electrode. Gas molecules cationized during this process rapidly drift to the surrounding strip-shaped cathode electrode. Thus, electric charges observable on the electric circuit are produced in both of the cylindrical anode electrode and the strip-shaped cathode electrode. Observation of which strip of the anodes and the cathodes the multiplication phenomenon has occurred in, therefore, tells the position of the incident particle beam. As a signal processing circuit for reading out signals and obtaining a two-dimensional image, a publicly known one can be used without limitation.
The preferred range of the applied voltage of the pixel electrode varies according to the type of the gas used, but is generally 400V to 800V. The pixel electrode uses pixels as the anodes, and thus easily creates a high electric field, resulting in a high multiplication factor. Hence, the multiplication factor obtained at the above applied voltage reaches a value as great as several thousands to several tens of thousands. With the pixel electrode, moreover, the distance over which the cationized gas molecules drift is extremely short. Compared with other gas multiplication detectors, therefore, the pixel electrode has a short dead time, and has a high count rate characteristic exceeding about 5×106 counts/(sec·mm2). Furthermore, the pixel electrode can be produced using a technology for preparing a printed circuit board, so that the pixel electrode having a large area can be provided at a low cost.
A preferred mode for constituting a gas multiplication ultraviolet image detector using the photoelectric conversion substance, gas electron multiplier, and pixel electrode described above will be described in detail with the use of
Within a chamber 7 having an opening for admitting ultraviolet rays produced by the scintillator 1, the photoelectric conversion substance 2, the gas electron multiplier 4, and the pixel electrode 6 are installed in this sequence, starting on the side nearer the opening, and the opening is sealed with an ultraviolet entrance window 8. As a material for the ultraviolet entrance window, it is preferred to use lithium fluoride (LiF), magnesium fluoride (MgF2) or calcium fluoride (CaF2) which is highly pervious to ultraviolet rays.
The interior of the chamber is filled with a predetermined gas. A combination of a rare gas and a quencher gas is generally used as this gas for electron multiplication. Examples of the rare gas are helium (He), neon (Ne), argon (Ar) and xenon (Xe). Examples of the quencher gas are carbon dioxide (CO2), methane (CH4), ethane (C2H6), and tetrafluoromethane (CF4). The amount of the quencher gas mixed into the rare gas is preferably 5 to 30%.
The photoelectric conversion substance preferably assumes the form of a thin film in order to efficiently withdraw primary electrons converted from ultraviolet rays. This thin film is preferably formed on the inner surface of the ultraviolet entrance window as shown in
In forming the thin film of the photoelectric conversion substance on the inner surface of the ultraviolet entrance window, it is preferred to provide an electrode 9, which comprises a metal layer, in an outer peripheral portion on the thin film, in order to supply electrons efficiently to the thin film, and in order to provide a uniform electric field between the thin film and the gas electron multiplier. Informing the thin film of the photoelectric conversion substance on the surface of the gas electron multiplier opposing the ultraviolet entrance window, it is preferred to use gold as the material for the metal layer of the gas electron multiplier, in order to avoid a reaction between the metal layer of the gas electron multiplier and the photoelectric conversion substance. Furthermore, in light of the ease of lamination on the plate-shaped insulating layer as well as the manufacturing cost, it is most preferred that the metal layer be rendered a multilayered metal layer composed of layers of copper, nickel and gold laminated in this order, starting on the side closer to the plate-shaped insulating layer.
The gas electron multiplier and the pixel electrode are installed parallel to the ultraviolet entrance window. It is preferred, from the viewpoints of the multiplication factor and the stability of operation, that a plurality of the gas electron multipliers be used, and similarly installed in parallel with the ultraviolet entrance window. Particularly preferably, two or three or so of the gas electron multipliers are installed. By amplifying the electrons by each of the plurality of gas electron multipliers and the pixel electrode, the electrons are amplified stepwise, with the result that the overall multiplication factor obtained can be markedly increased. By using the plurality of gas electron multipliers, moreover, ion feedback can be effectively suppressed, and the stability of operation can be enhanced. The ion feedback refers to a phenomenon in which cationic gas molecules secondarily generated by the electron avalanche phenomenon are accumulated to distort the electric field. Once such an ion feedback occurs, the multiplication factor and the count rate characteristic become unstable, hindering the stability of operation.
The shorter the length of the gap (G1 in
The magnitudes of the electric fields produced in G1, G2 and G3 are not limited, but can be selected, as appropriate, in light of the desired multiplication factor, the effect of suppressing the ion feedback, and the efficiency of charge collection. A concrete example of the preferred range of the electric field is generally 0.3 to 10 kV/cm. By setting the electric field at such a magnitude, a high multiplication factor and the suppression of the ion feedback can be achieved at the same time.
According to investigations by the present inventors, two of the gas electron multipliers and the pixel electrode are combined, and the applied voltages applied to the gas electron multipliers and the pixel electrode are optimized, whereby a multiplication factor exceeding 1×105 can be obtained stably as an overall multiplication factor by the gas electron multipliers and the pixel electrode, so that it has become possible to form an image by feeble ultraviolet rays resulting from the scintillator.
In the radiographic image detector of the present invention, high voltage power supplies for applying voltages are connected to the photoelectric conversion substance, the gas electron multipliers, and the pixel electrode. To the pixel electrode, a signal processing circuit for signal readout and for obtaining a two-dimensional image is connected. In performing readout of signals and obtaining a two-dimensional image from the pixel electrode, the use of an Anger signal processing circuit based on the Anger logic can result in a particularly increased position resolution. The Anger logic is a method which, when scintillation light produced by the incidence of radiation is detected with a spatial expanse, determines the position of the center of gravity of the scintillation light, thereby identifying the position of incidence of the radiation.
The Anger signal processing circuit is composed of a readout circuit for reading out the strengths of signals at the respective pixels of the pixel electrode, a coincidence circuit for discriminating scintillation light produced by the incidence of individual radiations, and a center-of-gravity arithmetic circuit for finding the position of the center of gravity of the scintillation light from the strengths of the signals read out of the respective pixels. In the Anger signal processing circuit, of the signals obtained by the readout circuit, only the signal produced by the incidence of single radiation is discriminated by the coincidence circuit. Then, with such a discriminated signal as a target, the weighted average of the strength of the signal is obtained by the center-of-gravity arithmetic circuit, whereby the position of incidence of radiation is pinpointed. According to such an Anger signal processing circuit, the position resolution can be increased to about 100 μm.
A preferred mode for constituting the radiographic image detector of the present invention with the use of the scintillator and the gas multiplication ultraviolet image detector mentioned above will be described in detail using
As shown in
If the thickness of the scintillator in the direction of incidence of radiation is so large that the position resolution declines owing to the spread of ultraviolet rays within the scintillator, many of the scintillators each having a small ultraviolet emergence surface and having the ultraviolet reflective film applied to the surfaces other than the ultraviolet emergence surface are arranged, as shown in
As another mode of the radiographic image detector according to the present invention, it is permissible to seal the opening of the chamber with the scintillator, instead of the ultraviolet entrance window, as shown in
Hereinbelow, the present invention will be described concretely by reference to its Examples, but the present invention is in no way limited by these Examples. Moreover, not all of combinations of the features described in the Examples are essential to the means for solution that the present invention adopts.
In the present Example, a lanthanum fluoride crystal containing neodymium as a luminescence center element was used as a scintillator. The lanthanum fluoride crystal containing neodymium was produced using a crystal production apparatus by the Czochralski method. Lanthanum fluoride and neodymium fluoride, each having purity of 99.99% or more, were used as raw materials. First, 2,700 g of lanthanum fluoride and 300 g of neodymium fluoride were weighed, mixed together thoroughly, and charged into a crucible.
Then, the crucible charged with the above materials was installed within a chamber of the crystal production apparatus. After the interior of the chamber was evacuated under vacuum to 1.0×10−3 Pa or less by use of a vacuum evacuation device, a mixed gas consisting of tetrafluoromethane and argon with high purity was introduced into the chamber to replace the atmosphere inside with the gas. The pressure inside the chamber after gas replacement was set at atmospheric pressure. After the gas replacement operation was performed, the materials were heated with a heater until melting, and a seed crystal was brought into contact with a melt of the molten materials. Then, the seed crystal was pulled up, while being rotated, to initiate the growth of the crystal.
With the crystal being pulled up, the crystal diameter was increased at a constant rate to adjust the crystal diameter to 55 mm. After the crystal diameter was increased to 55 mm, the pull-up rate was maintained at 3 mm/hr, and pulling-up was continued uninterruptedly until the length of the crystal reached about 100 mm. Then, the output of the heater was raised to cut the crystal off the material melt. Then, the crystal was cooled slowly to obtain a lanthanum fluoride crystal containing neodymium. This crystal was 55 mm in diameter and about 100 mm in length, and was a high quality crystal free from cloudiness or cracking. The content of neodymium was 5.9 wt % when measured using an energy dispersive X-ray spectroscope.
The resulting crystal was processed into a cubic shape 20 mm square by a wire saw with a diamond wire, and was then subjected to optical polishing on all surfaces to prepare a scintillator. One of the optically polished surfaces was used as an ultraviolet emergence surface, while the other surfaces were coated with an ultraviolet reflective film comprising Teflon (a registered trademark). An opening measuring 5 mm×5 mm was provided at the center of the ultraviolet reflective film applied to the surface opposed to the ultraviolet emergence surface so as to be used as a radiation entrance port. For this scintillator, the wavelength of ultraviolet rays emerging upon conversion of incident radiation was measured by the following method:
The scintillator was irradiated with X-rays with the use of a sealed-off X-ray tube with tungsten as a target. A tube voltage and a tube current for generating X-rays from the sealed-off X-ray tube were set at 60 kV and 40 mA, respectively. Ultraviolet rays appearing from the ultraviolet emergence surface of the scintillator were focused by a focusing mirror, and monochromatized by a spectroscope. The intensity of each wavelength was recorded to obtain a spectrum of the ultraviolet rays produced by the scintillator. The measurements confirmed that the scintillator converted the incident radiation into vacuum ultraviolet rays with a wavelength of 173 nm.
A gas multiplication ultraviolet image detector, a constituent of the radiographic image detector of the present invention, was prepared in the following manner:
As shown in
The gas electron multipliers used were each prepared by vapor-depositing copper, as a 5 μm thick metal layer, on both sides of a 50 μm thick plate-shaped insulating layer of polyimide to form a plate-shaped multilayer body, and providing cylindrical through-holes of 70 μm in diameter at a pitch of 140 μm in an arrangement of regular triangles throughout the plate-shaped multilayer body.
The pixel electrode used was composed of a 100 μm thick polyimide substrate, 300 μm wide anode strips provided on the back of the substrate, cylindrical anode electrodes arranged at intervals of 400 μm in such a manner as to be planted in the anode strips and exposed at the face of the substrate, and strip-shaped cathode electrodes provided to have holes of 260 μm in diameter formed around the upper end surfaces of the cylindrical anode electrodes. The diameter of the cylindrical anode electrode was 50 μm at its portion embedded in the substrate, and 70 μm at its portion exposed at the face of the substrate. The height of the cylindrical anode electrode was 110 μm, and an upper end portion thereof measuring 10 μm was exposed at the face of the substrate.
For the ultraviolet entrance window, MgF2 having a diameter of 70 mm and a thickness of 5 mm was used. A thin film of cesium iodide was provided, as a photoelectric conversion substance, on the inner surface of the ultraviolet entrance window, and an electrode comprising an aluminum layer was provided in an outer peripheral portion on the cesium iodide thin film. High voltage power supplies for applying applied voltages were connected to the electrode comprising the aluminum layer, which was provided in the outer peripheral portion on the cesium iodide thin film; to both surfaces of the gas electron multiplier at the first stage; to both surfaces of the gas electron multiplier at the subsequent stage; and to the anode electrodes and cathode electrodes of the pixel electrode. A signal processing circuit for reading out signals and obtaining a two-dimensional image was connected to the anode electrodes and cathode electrodes of the pixel electrode.
An Ar gas incorporating 10% of C2H6 was charged into the chamber to obtain a gas multiplication ultraviolet image detector, a constituent of the present invention.
In the gas multiplication ultraviolet image detector, −1035 V was applied to the electrode comprising the aluminum layer that was provided in the outer peripheral portion on the cesium iodide thin film, 280 V was applied between the metal layers on the opposite surfaces in each of the two gas electron multipliers, and 490 V was applied between the anode electrodes and cathode electrodes of the pixel electrode. The applied voltages were adjusted such that the electric field between the ultraviolet entrance window and the gas electron multiplier at the first stage was 0.5 kV/cm, the electric field between the gas electron multiplier at the first stage and the gas electron multiplier at the subsequent stage was 1.25 kV/cm, and the electric field between the gas electron multiplier at the subsequent stage and the pixel electrode was 2.95 kV/cm.
Under the above applied voltages, the overall multiplication factor obtained by the two gas electron multipliers and the pixel electrode reached 6.7×105. Even at such a high multiplication factor, electric discharge at the face or back of the gas electron multiplier, or electric discharge in the pixel electrode did not occur, and the gas multiplication ultraviolet image detector was confirmed to operate stably for a long period of time.
The scintillator and the gas multiplication ultraviolet image detector prepared by the above-described methods were installed, with the ultraviolet emergence surface of the scintillator and the ultraviolet entrance window of the gas multiplication ultraviolet image detector being in intimate contact as shown in
To evaluate the performance of the radiographic image detector, 241Am isotope having radioactivity of 2.6 MBq was used as a radiation source, and the response of the radiographic image detector to radiation generated by the radiation source was evaluated. The radiation source was installed near the scintillator, and a proximal surface of the scintillator was irradiated with α-rays generated by the radiation source. Using the signal processing circuit connected to the pixel electrode, signals outputted from each anode electrode of the pixel electrode were acquired to constitute a two-dimensional image. As a result, the shape of the scintillator could be grasped as an image, as shown in
A lanthanum fluoride crystal containing neodymium as a luminescence center element, which was produced in Example 1, was used as the scintillator.
A gas multiplication ultraviolet image detector was prepared in the following manner:
As shown in
In the present Example, a thin film of cesium iodide was provided, as a photoelectric conversion substance, on a surface of the gas electron multiplier at the first stage that opposed the ultraviolet entrance window. The pixel electrode used was the same as that in Example 1. For the ultraviolet entrance window, MgF2 having a diameter of 70 mm and a thickness of 5 mm was used.
High voltage power supplies for applying applied voltages were connected to both surfaces of the gas electron multiplier at the first stage; to both surfaces of the gas electron multiplier at the subsequent stage; and to the anode electrodes and cathode electrodes of the pixel electrode. A signal processing circuit for reading out signals and obtaining a two-dimensional image was connected to the anode electrodes and cathode electrodes of the pixel electrode. An Ar gas incorporating 10% of C2H6 was charged into the chamber to obtain a gas multiplication ultraviolet image detector, a constituent element of the present invention.
In the gas multiplication ultraviolet image detector, 300 V was applied between the metal layers on the opposite surfaces in each of the two gas electron multipliers, and 400 V was applied between the anode electrodes and cathode electrodes of the pixel electrode. The applied voltages were adjusted such that the electric field between the ultraviolet entrance window and the gas electron multiplier at the first stage was 0.48 kV/cm, the electric field between the gas electron multiplier at the first stage and the gas electron multiplier at the subsequent stage was 1.25 kV/cm, and the electric field between the gas electron multiplier at the subsequent stage and the pixel electrode was 2.5 kV/cm.
Under the above applied voltages, the overall multiplication factor obtained by the two gas electron multipliers and the pixel electrode reached 1.3×105. Even at such a high multiplication factor, electric discharge at the face or back of the gas electron multiplier, or electric discharge in the pixel electrode did not occur, and the gas multiplication ultraviolet image detector was confirmed to operate stably for a long period of time.
The scintillator and the gas multiplication ultraviolet image detector prepared above were installed, with the ultraviolet emergence surface of the scintillator and the ultraviolet entrance window of the gas multiplication ultraviolet image detector being in intimate contact as shown in
Evaluation of the performance of the radiographic image of 2.6 MBq as a radiation source, and evaluating the response of the radiographic image detector to radiation generated by the radiation source, similarly to Example 1. As a result, the shape of the scintillator could be grasped as an image, as shown in
The lanthanum fluoride crystal containing neodymium as a luminescence center element, which was produced in Example 1, was used as the scintillator. This scintillator was processed into a 3×3×10 mm3 rectangular parallelepiped by a wire saw provided with a diamond wire, and was then optically polished on all surfaces. Of the optically polished surfaces, the one surface measuring 3×3 mm2 was used as an ultraviolet emergence surface, while the four surfaces except the ultraviolet emergence surface and the surface opposing it were coated with an ultraviolet reflective film comprising Teflon. Nine of the so prepared scintillators were rendered ready for use, and each scintillator was arranged such that its ultraviolet emergence surface was placed in the same plane, whereby a scintillator array in a 3×3 arrangement was prepared.
A gas multiplication ultraviolet image detector was prepared in the same manner as in Example 1.
In the gas multiplication ultraviolet image detector, −1250 V was applied to the electrode comprising the aluminum layer that was provided in the outer peripheral portion on the cesium iodide thin film, 300 V was applied between the metal layers on the opposite surfaces in each of the two gas electron multipliers, and 400 V was applied between the anode electrodes and cathode electrodes of the pixel electrode. The applied voltages were adjusted such that the electric field between the ultraviolet entrance window and the gas electron multiplier at the first stage was 0.8 kV/cm, the electric field between the gas electron multiplier at the first stage and the gas electron multiplier at the subsequent stage was 1.25 kV/cm, and the electric field between the gas electron multiplier at the subsequent stage and the pixel electrode was 3.0 kV/cm.
Under the above applied voltages, the overall multiplication factor obtained by the two gas electron multipliers and the pixel electrode reached 6.0×105. Even at such a high multiplication factor, electric discharge at the face or back of the gas electron multiplier, or electric discharge in the pixel electrode did not occur, and the gas multiplication ultraviolet image detector was confirmed to operate stably for a long period of time.
The scintillator array and the gas multiplication ultraviolet image detector were installed, with the ultraviolet emergence surfaces of the scintillator array and the ultraviolet entrance window of the gas multiplication ultraviolet image detector being in intimate contact as shown in
To evaluate the performance of the radiographic image detector of the present invention, 241Am isotope having radioactivity of 8 kBq was used as a radiation source, and the response of the radiographic image detector to radiation generated by the radiation source was evaluated. The radiation source was installed near the scintillator, and a proximal surface of the scintillator was irradiated with α-rays generated by the radiation source. In the present Example, the scintillators located at the lower left position, the central position, and the upper right position of the scintillator array in the 3×3 arrangement were individually irradiated with α-rays to conduct evaluation. That is, the scintillator array was covered with a shield, and only a site of the shield corresponding to the scintillator targeted for irradiation was provided with an opening. Through this opening, only the scintillator targeted for irradiation was irradiated with α-rays. Using a signal processing circuit connected to the pixel electrode, signals outputted from each anode electrode of the pixel electrode were acquired to constitute a two-dimensional image.
The results obtained upon individual irradiation of the scintillators located at the upper left position, the central position, and the lower right position of the scintillator array in the 3×3 arrangement are shown in
The profiles of the frequencies of radiation detection along the dashed dotted lines (horizontal straight lines) in
| Number | Date | Country | Kind |
|---|---|---|---|
| 2009-089351 | Apr 2009 | JP | national |
| 2009-207779 | Sep 2009 | JP | national |
| Filing Document | Filing Date | Country | Kind | 371c Date |
|---|---|---|---|---|
| PCT/JP2010/054836 | 3/19/2010 | WO | 00 | 9/14/2011 |
