Read circuitry for an integrated circuit having memory cells and/or a memory cell array, and method of operating same

Abstract

An integrated circuit device (e.g., a logic device or a memory device) having a memory cell array which includes (i) a plurality of memory cells, wherein each memory cell is programmable to store one of a plurality of data states, and (ii) a bit line, having a plurality of memory cells coupled thereto. Memory cell control circuitry applies one or more read control signals to perform a read operation wherein, in response to the read control signals, a selected memory cell conducts a current which is representative of the data state stored therein. Sense amplifier circuitry senses the data state stored in the selected memory cell using a signal which is responsive to the current conducted by the selected memory cell. Current regulation circuitry is responsively and electrically coupled to the bit line during a portion of the read operation to sink or source at least a portion of the current provided on the bit line. Sensing circuitry responsively couples the current regulation circuitry to the bit line during the portion of the read operation.

Description

INTRODUCTION

In one aspect, the present inventions described and illustrated herein relate to an integrated circuit device having a memory cell array and read circuitry to detect, sense, sample and/or determine a data state of the memory cells in the array. More particularly, in one aspect, the present inventions relate to an integrated circuit having memory cell array including a plurality of memory cells (for example, memory cells having an electrically floating body in which a charge is stored) wherein read circuitry is selectively coupled to one or more memory cells to detect, sense, sample and/or determine a data state of the one or more memory cells.

Briefly, with reference to FIG. 1, memory cell array 10 typically includes a plurality of memory cells 12 arranged in a matrix of rows and columns. A row address decoder enables one or more rows to be read by sensing circuitry (for example, a plurality of sense amplifiers). A column decoder, in response to an address, selects one or more of the outputs of the data sensing circuitry.

One type of dynamic random access memory cell is based on, among other things, a floating body effect of, for example, semiconductor on insulator (SOI) transistors. (See, for example, U.S. Pat. No. 6,969,662, U.S. Patent Application Publication No. 2006/0131650 and U.S. Patent Application Publication No. 2007/0058427). In this regard, the memory cell may consist of a partially depleted (PD) or a fully depleted (FD) SOI transistor (or transistor formed in bulk material/substrate) on having a channel, which is disposed adjacent to the body and separated therefrom by a gate dielectric. The body region of the transistor is electrically floating in view of the insulation or non-conductive region (for example, in bulk-type material/substrate) disposed beneath the body region. The state of cell is determined by the concentration of charge in the body of the transistor.

With reference to FIGS. 2A, 2B, 2C and 2D, in one exemplary embodiment, memory cell array 10 may include a plurality of memory cells 12, each consisting of (or consisting essentially of) transistor 14 having gate 16, an electrically floating body region 18, source region 20 and drain region 22. The electrically floating body region 18 is disposed between source region 20 and drain region 22. Moreover, body region 18 is disposed on or above region 24, which may be an insulation region (for example, a silicon dioxide or silicon nitride material of an SOI material) or non-conductive region (for example, in bulk-type material). The insulation or non-conductive region may be disposed on substrate 26.

Data is written into or read from a selected memory cell by applying suitable control signals to a selected word line(s) 28, and/or a selected bit line(s) 32. In this illustrative embodiment, source line (30) is a common node in a typical implementation though it could be similarly decoded. In response, charge carriers are accumulated in or emitted and/or ejected from electrically floating body region 18 wherein the data states are defined by the amount of carriers within electrically floating body region 18. Notably, the entire contents of U.S. Pat. Nos. 6,969,662, 7,301,803 and U.S. Patent Application Publication No. 2007/0058427, including, for example, all features, attributes, architectures, configurations, materials, techniques and advantages described and illustrated therein, are incorporated by reference herein.

As mentioned above, memory cell 12 of memory cell array 10 operates by accumulating in or emitting/ejecting majority carriers (electrons or holes) 34 from body region 18 of, for example, N-channel transistors. (See, FIGS. 3A and 3B). In this regard, accumulating majority carriers (in this illustrative example, “holes”) 34 in body region 18 of memory cells 12 via, for example, impact ionization near source region 20 and/or drain region 22, is representative of a logic high or “1” data state. (See, FIG. 3A). Emitting or ejecting majority carriers 34 from body region 18 via, for example, forward biasing the source/body junction and/or the drain/body junction, is representative of a logic low or “0” data state. (See, FIG. 3B).

Several arrangements, layouts and techniques have been proposed to read the data stored in an electrically floating body type transistor. (See, for example, U.S. Pat. No. 6,567,330; “Memory Design Using a One-Transistor Cell on SOI”, IEEE Journal of Solid-State Circuits, Vol. 37, No. 11, November 2002; and U.S. Pat. No. 7,301,838). For example, a current sense amplifier (cross-coupled type) may be employed to compare the cell current to a reference current, for example, the current of a reference cell. From that comparison, it is determined whether the memory cell contained a logic high data state (relatively more majority carriers contained within body region) or logic low data state (relatively less majority carriers contained within body region). The differences of the charge stored in the body of the transistor affect the threshold voltage of the transistor, which in turn affects the current conducted by the transistor when switched into its conductive state.

In particular, the sense amplifier (for example, a cross-coupled sense amplifier) typically includes an input/output connected to an associated bit line and an input connected to a reference current generator. In operation, the sense amplifier compares the current conducted by the memory cell with a reference current. The magnitude of the reference current generally lies between the magnitudes of the currents conducted in the logic high data state and logic low data state of the memory cell. The sense amplifier compares the reference current to the current produced by the memory cell (the current varies depending on whether the memory cell is either in a logic high data state or logic low data state). Based on that comparison, the sense amplifier generates or outputs an output signal having a predetermined polarity (for example, a positive or negative polarity) depending on the data state stored in the memory cell (for example, whether the memory cell stored a logic high or a logic low binary data state). (See, for example, U.S. Pat. No. 6,567,330; “Memory Design Using a One-Transistor Cell on SOI”, IEEE Journal of Solid-State Circuits, Vol. 37, No. 11, November 2002; and U.S. Pat. No. 7,301,838).

SUMMARY OF THE DISCLOSURE

There are many inventions described and illustrated herein. The present inventions are neither limited to any single aspect nor embodiment thereof, nor to any combinations and/or permutations of such aspects and/or embodiments. Moreover, each of the aspects of the present inventions, and/or embodiments thereof, may be employed alone or in combination with one or more of the other aspects of the present inventions and/or embodiments thereof. For the sake of brevity, many of those permutations and combinations will not be discussed separately herein.

In a first principle aspect, certain of the present inventions are directed to an integrated circuit device comprising a memory cell array including a plurality of memory cells and a bit line having an intrinsic capacitance, wherein a plurality of the memory cells are coupled to the bit line. In this embodiment, each memory cell includes an electrically floating body transistor including a body region which is electrically floating, wherein each memory cell is programmable to store one of a plurality of data states including (i) a first data state representative of a first charge in the body region of the transistor, and (ii) a second data state representative of a second charge in the body region of the transistor. The integrated circuit device further includes memory cell control circuitry, coupled to the memory cell array, to generate one or more read control signals to perform a read operation wherein, in response to the one or more read control signals, the electrically floating body transistor associated with a selected memory cell conducts a current, which is representative of the data state stored in the selected memory cell, on the bit line. The integrated circuit device also includes sense amplifier circuitry having an input which is electrically coupled to the bit line to receive a signal which is responsive to the current conducted on the bit line by the electrically floating body transistor of the selected memory cell and, in response thereto, to (i) sense the data state stored in the selected memory cell and (ii) output a signal which is representative thereof. Current regulation circuitry, electrically coupled to the bit line, sinks or sources at least a portion of the current conducted on the bit line by the electrically floating body transistor of the selected memory cell during only a portion of the read operation. In addition, sensing circuitry, coupled between the bit line and the current regulation circuitry, responsively couples the current regulation circuitry to the bit line during the portion of the read operation.

In one embodiment, the sensing circuitry includes a transistor (for example, a p-channel or n-channel type transistor) wherein the transistor provides a current path between the bit line and the current regulation circuitry in response to a predetermined voltage on the bit line. In another embodiment, the sensing circuitry includes a switch which provides a current path between the bit line and the current regulation circuitry in response to a predetermined voltage on the bit line.

The sense amplifier circuitry (for example, a cross-coupled sense amplifier) may sense the data state of the selected memory cell using an amplitude of the voltage on the bit line. The amplitude of the voltage on the bit line is responsive to the amount of current on the bit line conducted by the electrically floating body transistor associated with the selected memory cell during the read operation.

In one embodiment, the current regulation circuitry includes a current mirror circuit.

Notably, the electrically floating body transistor associated with the selected memory cell may conduct a channel current which is representative of the data state of the memory cell on the bit line. The electrically floating body transistor associated with the selected memory cell may conduct a bipolar transistor current which is representative of the data state of the memory cell on the bit line.

In another aspect, the present inventions may be directed to an integrated circuit device comprising a memory cell array including a plurality of memory cells arranged in a matrix of rows and columns, wherein each memory cell is programmable to store one of a plurality of data states, and a bit line having an intrinsic capacitance, wherein a plurality of the memory cells are coupled to the bit line. The integrated circuit device may include memory cell control circuitry, coupled to the memory cell array, to generate one or more read control signals to perform a read operation wherein, in response to the one or more read control signals, a selected memory cell conducts a current, which is representative of the data state stored in the selected memory cell, on the bit line. Sense amplifier circuitry having an input which is electrically coupled to the bit line may receive a signal which is responsive to the current conducted on the bit line, and, in response thereto, to (i) sense the data state stored in the selected memory cell and (ii) output a signal which is representative thereof. The integrated circuit device may also include current regulation circuitry, electrically coupled to the bit line, to sink or source at least a portion of the current conducted on the bit line by the selected memory cell during only a portion of the read operation. Sensing circuitry, coupled between the bit line and the current regulation circuitry, may responsively couple the current regulation circuitry to the bit line during the portion of the read operation.

In one embodiment, the sensing circuitry includes a transistor (for example, a p-channel or n-channel type transistor) wherein the transistor provides a current path between the bit line and the current regulation circuitry in response to a predetermined voltage on the bit line. In another embodiment, the sensing circuitry includes a switch which provides a current path between the bit line and the current regulation circuitry in response to a predetermined voltage on the bit line.

The sense amplifier circuitry (for example, a cross-coupled sense amplifier) may sense the data state of the selected memory cell using an amplitude of the voltage on the bit line. The amplitude of the voltage on the bit line is responsive to the amount of current on the bit line conducted by the electrically floating body transistor associated with the selected memory cell during the read operation.

In one embodiment, the current regulation circuitry includes a current mirror circuit.

In another aspect, the present inventions are directed to an integrated circuit device comprising a memory cell array including: (a) a plurality of memory cells wherein each memory cell includes an electrically floating body transistor including a body region which is electrically floating, wherein each memory cell is programmable to store one of a plurality of data states including (i) a first data state representative of a first charge in the body region of the transistor, and (ii) a second data state representative of a second charge in the body region of the transistor, and (b) a bit line having an intrinsic capacitance, wherein a plurality of the memory cells are coupled to the bit line. The integrated circuit according to this aspect of the present inventions includes:

• • means for generating one or more read control signals to perform a read operation wherein, in response to the one or more read control signals, the electrically floating body transistor associated with a selected memory cell provides a current, which is representative of the data state stored in the selected memory cell, on the bit line;
  • means for receiving a signal which is responsive to the current conducted on the bit line by the electrically floating body transistor of the selected memory cell and, in response thereto, for (i) sensing the data state stored in the selected memory cell and (ii) outputting a signal which is representative thereof;
  • means for sinking or sourcing at least a portion of the current provided on the bit line by the electrically floating body transistor of the selected memory cell during only a portion of the read operation; and
  • means for responsively and electrically coupling the current regulation circuitry to the bit line during the portion of the read operation.

In another aspect, the present inventions are directed to a method of reading a memory cell which is disposed on integrated circuit device comprising a memory cell array including a plurality of memory cells arranged in a matrix of rows and columns, wherein the memory cell array includes a plurality of memory cells wherein each memory cell includes an electrically floating body transistor including a body region which is electrically floating, wherein each memory cell is programmable to store one of a plurality of data states including (i) a first data state representative of a first charge in the body region of the transistor, and (ii) a second data state representative of a second charge in the body region of the transistor. The method according to this aspect of the inventions comprises

• • generating read control signals to perform a read operation wherein, in response to read control signals, the electrically floating body transistor associated of a selected memory cell conducts a current which is representative of the data state of the memory cell on a bit line;
  • determining the data state stored in the selected memory cell using a signal which is responsive to the current conducted by the electrically floating body transistor and, in response thereto, outputting a data state signal which is representative of the data state of the memory cell on the bit line; and
  • sinking or sourcing at least a portion of the current conducted on the bit line by the electrically floating body transistor of the selected memory cell during only a portion of the read operation.

In one embodiment, the method may further include sensing a predetermined voltage on the bit line, wherein sinking or sourcing at least a portion of the current conducted on the bit line further includes sinking or sourcing a substantial portion of the current provided on the bit line by the electrically floating body transistor after sensing the predetermined voltage on the bit line. In another embodiment, the method may further include providing a current path during only a portion of the read operation in order to sink or source at least a portion of the current provided on the bit line by the electrically floating body transistor of the selected memory cell.

Notably, determining the data state stored in the selected memory cell using the signal which is responsive to the current conducted by the electrically floating body transistor may further includes using an amplitude of the voltage on the bit line to determine the data state stored in the selected memory cell. The amplitude of the voltage on the bit line may be responsive to the amount of current conducted on the bit line during the read operation.

Again, there are many inventions, and aspects of the inventions, described and illustrated herein. This Summary of the Inventions is not exhaustive of the scope of the present inventions. Indeed, this Summary of the Inventions may not be reflective of or correlate to the inventions protected by the claims in this or in continuation/divisional applications hereof.

Moreover, this Summary of the Inventions is not intended to be limiting of the inventions or the claims (whether the currently presented claims or claims of a divisional/continuation application) and should not be interpreted in that manner. While certain embodiments have been described and/or outlined in this Summary of the Inventions, it should be understood that the present inventions are not limited to such embodiments, description and/or outline, nor are the claims limited in such a manner (which should also not be interpreted as being limited by the Summary of the Inventions).

Indeed, many other aspects, inventions and embodiments, which may be different from and/or similar to, the aspects, inventions and embodiments presented in this Summary, will be apparent from the description, illustrations and claims, which follow. In addition, although various features, attributes and advantages have been described in this Summary of the Inventions and/or are apparent in light thereof, it should be understood that such features, attributes and advantages are not required whether in one, some or all of the embodiments of the present inventions and, indeed, need not be present in any of the embodiments of the present inventions.

BRIEF DESCRIPTION OF THE DRAWINGS

In the course of the detailed description to follow, reference will be made to the attached drawings. These drawings illustrate different aspects of the present inventions and, where appropriate, reference numerals illustrating like structures, components, materials and/or elements in different figures are labeled similarly. It is understood that various combinations of the structures, components, materials and/or elements, other than those specifically illustrated, are contemplated and are within the scope of the present inventions.

Moreover, there are many inventions described and illustrated herein. The present inventions are neither limited to any single aspect nor embodiment thereof, nor to any combinations and/or permutations of such aspects and/or embodiments. Moreover, each of the aspects of the present inventions, and/or embodiments thereof, may be employed alone or in combination with one or more of the other aspects of the present inventions and/or embodiments thereof. For the sake of brevity, many of those permutations and combinations will not be discussed separately herein.

FIG. 1 is a schematic block diagram illustration of a conventional memory cell array having a plurality of memory cells arranged in an array of a plurality of rows and columns, in conjunction with row and column address decoders, word line drivers and data read/write circuitry;

FIG. 2A is a schematic representation of a portion of a prior art memory cell array including a plurality of memory cells wherein each memory cell includes one electrically floating body transistor;

FIG. 2B is a three dimensional view of an exemplary prior art memory cell comprised of one electrically floating body transistor (PD-SOI NMOS);

FIG. 2C is a cross-sectional view of the memory cell of FIG. 2B, cross-sectioned along line C-C′;

FIG. 2D is a plan view layout (not drawn to scale) of a portion of the memory cell array of FIG. 2A;

FIGS. 3A and 3B are exemplary schematic illustrations of the charge relationship, for a given data state, of a prior art memory cell comprised of an electrically floating body transistor (N-channel type transistor);

FIGS. 4A-4D are schematic block diagram illustrations of exemplary read circuitry, according to certain aspects and/or embodiments of the present inventions, wherein FIG. 4A and 4C illustrate exemplary embodiments of read circuitry in conjunction with generic memory cells and the memory cell array including a plurality of such memory cells, and FIG. 4B and 4D illustrate exemplary embodiments of read circuitry in conjunction with a specific memory cell which includes an electrically floating body transistor (wherein the data state is stored in the electrically floating body region) and the memory cell array including a plurality of such memory cells;

FIGS. 5A and 5B are schematic block diagram illustrations of exemplary sense amplifier circuitry of FIGS. 4A-4D, according to certain aspects and/or embodiments of the present inventions;

FIGS. 6A and 6B are schematic block diagram illustrations of exemplary current regulation circuitry of FIGS. 4A-4D, according to certain aspects and/or embodiments of the present inventions;

FIGS. 7A-7D are schematic block diagram illustrations of exemplary sensing circuitry of FIGS. 4A-4D, according to certain aspects and/or embodiments of the present inventions;

FIGS. 8A and 8B are schematic illustrations of exemplary bit line precharge circuitry of FIGS. 4C and 4D, according to certain aspects and/or embodiments of the present inventions;

FIG. 9 is a block diagram illustration of exemplary reference voltage generation circuitry to generate one or more reference voltages, according to certain aspects and/or embodiments of the present inventions;

FIG. 10A illustrates an exemplary timing relationship of selected control signals, the amplitude of the voltage applied to an input of the sense amplifier circuitry (V_bitline), and the output of the sense amplifier circuitry in response to reading, sensing, detecting, sampling and/or determining a logic level high data state stored in the selected memory cell read information coupled to a bit line, according to certain aspects and/or embodiments of the present inventions;

FIG. 10B illustrate exemplary relationships of the amplitude of the current (I_bitcell) output by a memory cell having a logic level high data state stored therein in relation to (a) the amplitude of the voltage (V_bitline) developed and/or formed on the bit line in response thereto and (b) the amplitude of the current (I_reg—cir) which is sunk by the current regulation circuitry, according to certain aspects and/or embodiments of the present inventions;

FIG. 10C illustrate exemplary relationships of the amplitude of the current on the bit line (I_bitline) as a function of or in relation to the amplitude of the voltage (V_bitline) developed and/or formed on the bit line in response thereto, wherein after the current regulation circuitry is connected to the bit line (via the sensing circuitry) the current on the bit line (I_bitline) may be characterized as the difference of the current (I_bitcell) output by a memory cell having a logic level high data state stored therein and the current (I_reg—cir) which is sunk by the current regulation circuitry, according to certain aspects and/or embodiments of the present inventions;

FIGS. 11A-11C are schematic block diagram illustrations of exemplary integrated circuit devices in which the sense amplifier circuitry and/or architecture may be implemented, wherein FIG. 11A and 11C are logic devices (having logic circuitry and resident memory) and FIG. 11B is a memory device (having primarily function of memory), according to certain aspects of the present inventions;

FIGS. 12A and 12B are schematic block diagram illustrations of a portion of an exemplary memory cell array architecture (as described and illustrated in U.S. Patent Application Publication No. 2007/0241405, by Popoff, (“Semiconductor Memory Array Architecture, and Method of Controlling Same”) in conjunction with sense amplifier circuitry, wherein the adjacent bit lines are connected to different sense amplifier circuitry; and

FIG. 13 is a schematic block diagram illustration of an exemplary embodiment of the bit line selection circuit, in conjunction with read circuitry of the present inventions, and certain peripheral circuitry (i.e, reference generation circuitry and memory cell selection circuitry); and

FIGS. 14A and 14B are schematic block diagram illustrations of exemplary read circuitry, according to certain aspects and/or embodiments of the present inventions, wherein the memory cell array may include generic memory cells and/or specific memory cells which includes an electrically floating body transistor (wherein the data state is stored in the electrically floating body region) and the memory cell array including a plurality of such memory cells.

Again, there are many inventions described and illustrated herein. The present inventions are neither limited to any single aspect nor embodiment thereof, nor to any combinations and/or permutations of such aspects and/or embodiments. Each of the aspects of the present inventions, and/or embodiments thereof, may be employed alone or in combination with one or more of the other aspects of the present inventions and/or embodiments thereof. For the sake of brevity, many of those combinations and permutations are not discussed separately herein.

DETAILED DESCRIPTION OF EMBODIMENTS

There are many inventions described and illustrated herein. In one aspect, the present inventions are directed to an integrated circuit device having read circuitry and/or read circuitry architectures for use with a memory cell array having a plurality of memory cells arranged, for example, in a matrix of rows and columns. In another aspect, the present inventions are directed to methods of reading and/or operating the memory cells of the memory cell array using, for example, the read circuitry of the present inventions. The memory cell array and read circuitry and/or architectures may comprise a portion of the integrated circuit device, for example, a logic device (such as, a microcontroller, microprocessor or the like) or a memory device (such as, a discrete memory device).

Notably, the present inventions may be implemented in conjunction with any memory cell technology, whether now known or later developed. For example, the memory cells may include one or more transistors having electrically floating body regions, one or more transistors wherein each transistor includes a plurality of electrically floating gates, junction field effect transistors (often referred to as JFETs), thyristor-based memory cells or any other memory/transistor technology whether now known or later developed. All such memory technologies are intended to fall within the scope of the present inventions.

Moreover, the present inventions may be implemented in conjunction with any type of memory type (whether discrete or integrated with logic devices). For example, the memory may be a DRAM, SRAM and/or Flash. All such memories are intended to fall within the scope of the present inventions.

Indeed, in one embodiment, the memory cells of the memory cell array may include at least one transistor having an electrically floating body transistor which stores an electrical charge in the electrically floating body region thereof. The amount of charge stored in the in the electrically floating body region correlates to the data state of the memory cell. One type of such memory cell is based on, among other things, a floating body effect of semiconductor on insulator (SOI) transistors. (See, for example, (1) Fazan et al., U.S. Pat. No. 6,969,662, (2) U.S. Pat. No. 7,301,838, (3) U.S. Pat. No. 7,301,838, (4) Okhonin, U.S. Patent Application Publication No. 2007/0138530, (“Electrically Floating Body Memory Cell and Array, and Method of Operating or Controlling Same”), and (5) Okhonin et al., U.S. Patent Application Publication No. 2007/0187775, (“Multi-Bit Memory Cell Having Electrically Floating Body Transistor, and Method of Programming and Reading Same”), all of which are incorporated by reference herein in their entirety). In this regard, the memory cell may consist of a partially depleted (PD) or a fully depleted (FD) SOI transistor or bulk transistor (transistor which formed in or on a bulk material/substrate) having a gate, which is disposed adjacent to the electrically floating body and separated therefrom by a gate dielectric. The body region of the transistor is electrically floating in view of the insulation or non-conductive region, for example, in bulk-type material/substrate, disposed beneath the body region. The state of memory cell may be determined by the concentration or amount of charge contained or stored in the body region of the Sal or bulk transistor which may determine the amount of current output or conducted in response to the application of read control signals.

With reference to FIGS. 4A and 4B, read circuitry 100 according to exemplary embodiments of the present inventions may include sense amplifier circuitry 102, current regulation circuitry 104 and sensing circuitry 106. In one illustrated embodiment, the present inventions are implemented in conjunction with a “generic” memory cell technology. (See, for example, FIG. 4A wherein read circuitry 100 is illustrated in conjunction with any type of memory cell and a memory cell array including a plurality of such memory cells). In another illustrated embodiment, the present inventions are implemented in conjunction with a memory cell array 10 having a plurality of memory cells 12 including at least one electrically floating body transistor 14. (See, for example, FIG. 4B).

With continued reference to FIGS. 4A and 4B, sense amplifier circuitry 102, reads, senses, samples, detects and/or determines the data state stored in the memory cell. In one embodiment, sense amplifier circuitry 102 (for example, a cross-coupled sense amplifier or a comparator) is coupled to the bit line, at given or predetermined time in the read operation, to receive a signal which is representative of the data state stored in the memory cell (for example, V_bitline).

The sense amplifier circuitry 102 may employ sensing circuitry and/or techniques. In the context of a voltage sense amplifier, sense amplifier circuitry 102 may, in response to a control signal, compare a signal which is representative of the data state of the memory cell to a reference signal, for example, a voltage of a reference cell or output of reference generation circuitry. (See, for example, FIGS. 5A and 5B). From that comparison, sense amplifier circuitry 102 determines the data state stored in the memory cell.

The sense amplifier circuitry 102 may be any circuitry and employ any technique, whether now known or later developed, which reads, senses, samples, detects and/or determines the data state stored in the memory cell. For example, sense amplifier circuitry 102 may include the circuitry described and illustrated in U.S. Pat. No. 7,301,838. Alternatively, the sense amplifier include the sense amplifier circuitry described and illustrated in U.S. Provisional Patent Application Ser. No. 60/967,605 (Inventor: Philippe Graber, Filed: Sep. 6, 2007, Title: “Sense Amplifier Circuitry for Integrated Circuit Having Memory Cell Array, and Method of Operating Same”).

Notably, in the illustrative embodiment of FIG. 4B, sense amplifier circuitry 102 may couple to one of the regions of transistor 14 (for example, drain region 22) of memory cell 12 to read, sense, sample, detect and/or determine the data state stored in memory cell 12 based on or based substantially on the current output or conducted by transistor 14 (i.e., I_bitcell) of memory cell 12. In one embodiment, sense amplifier circuitry 102 reads, senses, samples, detects and/or determines the data state stored in memory cell 12 based on or based substantially on a bipolar transistor current (or a signal which is representative thereof) output and/or conducted by transistor 14 (via the intrinsic bipolar transistor), as described in, for example, U.S. Pat. No. 7,301,803 and U.S. Patent Application Publication Nos. 2007/0058427 and 2007/0187775. In another embodiment, sense amplifier circuitry 102 reads, senses, samples, detects and/or determines the data state stored in memory cell 12 based on or based substantially on a channel current (or a signal which is representative thereof) output and/or conducted by transistor 14, as described in, for example, U.S. Pat. No. 6,969,662. Under either of these circumstances, the current output and/or conducted by transistor 14 (whether bipolar, channel or a combination thereof) is based on (or substantially based on) the relative amount of majority carriers stored, contained or resident in electrically floating body region 18 of transistor 14 of memory cell 12 (relatively more majority carries 34 contained within body region 18 may be representative of a logic high data state and a relatively less majority carries 28 contained within body region 18 may be representative of a logic low data state).

With continued reference to FIGS. 4A and 4B, read circuitry 100 further includes current regulation circuitry 104 to regulate and/or control the amount of current which flows through the memory cell during the read operation (in those instances where the selected memory cell stores a logic high data state). In this regard, during implementation of the read operation, the current (i.e., I_bitcell) output or conducted by the memory cell (for example, by transistor 14 of memory cell 12 illustrated in FIG. 4B), or a portion thereof, is provided to node 108. Under certain conditions and circumstances which are discussed in detail below, where the selected memory cell stores a logic high data state, a portion or all of the current (i.e., I_bitcell) charges the intrinsic capacitance of the bit line, which is represented by capacitor 110 (C_bitline). In addition, once the amplitude of the voltage on the bit line (V_bitline) is at or exceeds a predetermined value, a portion of the current output or conducted by the memory cell (i.e., I_bitcell) is provided to current regulation circuitry 104 (i.e., I_reg—cir). The charge integrated and/or stored by the intrinsic capacitance of the bit line (i.e., capacitor 110) provides a voltage V_bitline which, in one example, is employed by sense amplifier circuitry 102 to read, sense, sample, detect and/or determine the data state stored in memory cell coupled to the bit line (for example, memory cell 12 coupled to bit line 32 in FIG. 4B). Thus, in the illustrated embodiment of FIGS. 4B, a voltage signal is employed to determine the state of the memory cell and that voltage is generated by storing or integrating (on or by bitline capacitor 110) the current output or conducted by memory cell 12 during a certain time interval.

Notably, regulating the current output or conducted by transistor 14 of memory cell 12 may provide an advantage during operation of memory cells 12 in memory cell array 10. (See, for example, FIG. 4B). In this embodiment, voltage across the memory cell 12 self adjusts to sustain current imposed by current regulation circuitry 104. In this regard, the voltage levels applied to the gate of transistor 14 for reading and writing may be the same or substantially the same. In this way, transistor 14 of memory cell 12 may be configured in the same or similar condition at the conclusion of a read operation (where memory cell 12 stores a logic high data state) and write operation (where a logic high data state is written into or stored in memory cell 12). Such a situation may be advantageous where the memory cell array is configured in particular architectures where the level of charge stored in memory cells programmed to a logic high state has to be well controlled such that little to no disturbance may be observed in memory cells adjacent to a selected memory cell (which stores a logic high data state). Thus, by regulating the current, in the manner described herein, the operation and response of memory cells 12 may be more reliable and the peripheral control circuitry and control techniques (for example, the word line drivers and data read/write circuitry—see, for example, FIG. 1) may be simplified.

The current regulation circuitry 104 may be any circuitry, whether now known or later developed, which controls the amount of an input or output current. For example, current regulation circuitry 104 may be implemented using a current mirror circuit. (See, for example, FIG. 6A). In the illustrative embodiment of FIG. 6A, current regulation circuitry 104 will seek to sink an input current (I_reg—cir) which is equal to an amount of current I_reg—max. Notably, current regulation circuitry 104 may be implemented via other circuitry and/or techniques; all such circuitry and/or techniques, whether now known or later developed, are intended to fall within the scope of the present inventions.

With reference to FIG. 6B, in one embodiment, the current source may include two transistors (in one exemplary embodiment, two P-channel type transistors). The two transistors, in combination, generate (or attempt to generate) a relatively stable constant current. Although the current (I_reg—max) provided by the current source depends on the distribution, range and/or anticipated of the output current of the memory cell (among other things), in one exemplary embodiment, the current I_reg—max may be 5 μA under those circumstances where output current of transistor 14 of memory cell 12 is expected to be 30 μA when a logic high data state is stored therein and read therefrom. Notably, current source may be any circuit or device, whether now known or later developed, which generate and output a relatively stable constant current.

With reference to FIGS. 4A and 4B, read circuitry 100 further includes sensing circuitry 106, disposed between node 108 and the input of current regulation circuitry 104. In operation, sensing circuitry 106 responsively couples node 108 (or provides a current path from node 108) to current regulation circuitry 104. In this regard, in response to sensing, detecting and/or determining (i) a predetermined amount of current provided to charge the intrinsic capacitance (capacitor 110 (C_bitline)) of the bit line and/or (ii) a predetermined voltage at node 108, sensing circuitry 106 couples node 108 (or provides a current path from node 108) to current regulation circuitry 104 so that, thereafter, a portion (or all) of the current output or conducted by the memory cell (i.e., I_bitcell) is provided to or sunk by current regulation circuitry 104. Thus, sensing circuitry 106, in conjunction with current regulation circuitry 104, controls and/or regulates the amount of current available from or provided by the memory cell (i.e., I_bitcell) to charge the intrinsic capacitance (capacitor 110 (C_bitline)) of the bit line and/or form, provide or establish a voltage at node 108. In this way, at a given point in time in the read operation, sense amplifier circuitry 102 may read, sense, sample, detect and/or determine a logic high data state stored in the memory cell—regardless of the different output or response characteristics and/or distributions of the memory cells of the memory cell array. That is, the amplitude of the input signal of sense amplifier circuitry 102 (which is used to read, sense, sample, detect and/or determine a logic high data state stored in the memory cell) may be limited or restricted (the distribution thereof relatively more narrow) notwithstanding the distribution of different output or response characteristics of the memory cells of the memory cell array.

The sensing circuitry 106 may be any circuitry and employ any technique, whether now known or later developed, which (1) senses, detects and/or determines a predetermined amount of current to the intrinsic capacitance (capacitor 110 (C_bitline)) of the bit line and/or a predetermined voltage at node 108, and (2) electrically couples node 108 (or provides a current path from node 108) to current regulation circuitry 104. For example, sensing circuitry 106 may be implemented using comparator circuitry 112 to sense, detect and/or determine the amount of charge or current by memory cell (i.e., I_bitcell) and/or (ii) amplitude of the voltage at node 108. (See, for example, FIGS. 7A and 7B). In the illustrative embodiment of FIGS. 7A and 7B, when the voltage on signal line 106a is equal to or exceeds a predetermined or threshold voltage (V_threshold), comparator enables the switch 114a or transistor 114b to connect current regulation circuitry 104 to node 108 and thereafter allow current (I_reg—cir) to flow to current regulation circuitry 104 which sinks some or all of the current output from or conducted by the memory cell (I_bitcell).

In one embodiment, the amplitude or level of the threshold voltage (V_threshold) is less than the bit line voltage quiescent point. For example, the threshold voltage (V_threshold) may be 0.1V.

With reference to FIGS. 7C and 7D, sensing circuitry 106 may be implemented using p-channel transistor 114c or n-channel transistor 114d, respectively, having a predetermined reference voltage applied the gate thereof. With reference to FIG. 7C for example, in operation, when the voltage on signal line 106a is equal to or exceeds a threshold voltage (of transistor 114c) greater than reference voltage Vref₁, transistor 114c “turns on” and provides a current path from node 108 to current regulation circuitry 104 (which allows current regulation circuitry 104 to sink some or all of the current output or conducted from the memory cell In one embodiment, the reference voltage Vref₁ is equal to or substantially equal to ground or common. Indeed, in one embodiment, the amplitude of the voltage necessary to “turn on” transistor 114b is equal to the amplitude or level of the threshold voltage (V_threshold) discussed above in connection with the embodiments of FIGS. 7A and 7B.

Notably, depending on the input/output characteristics of transistor 114c and 114d, transistor 114c and 114d may start to conduct current before the voltage on signal line 106a is equal to or exceeds a threshold voltage (i) higher than reference voltage Vref₁ for transistor 114c or (ii) lower for transistor 114d than reference voltage Vref₁. Indeed, transistor 114c or transistor 114d may be sized, designed and/or fabricated to provide predetermined temporal response characteristics as well as input/output characteristics. For example, the level of body implant may be adjusted to provide adequate control for the conduction threshold of transistor 114c or transistor 114d.

In sum, sensing circuitry 106 may be any circuitry and employ any technique, whether now known or later developed, which senses, detects and/or determines a predetermined voltage on the intrinsic capacitance (capacitor 110 (C_bitline)) of the bit line and/or a predetermined voltage at node 108, and, in response thereto, electrically couples node 108 (or provides a current path from node 108) to current regulation circuitry 104.

With reference to FIGS. 4C and 4D, read circuitry 100 may further include bit line precharge circuitry 116. In these embodiments, bit line precharge circuitry 116 is connected to the bit line, via signal line 116a, to establish or provide a predetermined condition or state thereon (for example, a predetermined voltage amplitude) at the start of or immediately prior to reading the data state of the memory cell. The bit line precharge circuitry 116 may be any circuitry, whether now known or later developed, which establishes or provides a predetermined condition on the bit line at the start of or prior to reading the data state of the memory cell. For example, in one embodiment, bit line precharge circuitry 116 may include transistor 118 which is controlled via a precharge control signal coupled to the gate thereof. (See, for example, FIG. 8A). In operation, when the precharge control signal is asserted, transistor 118 is enabled and applies voltage Vref₂ to the bit line to establish or provide a predetermined condition on the bit line. In contrast, when precharge control signal is not asserted (deasserted), transistor 118 is disabled and essentially presents an open circuit to signal line 114. Notably, Vref₂ may be a voltage that is equal to or substantially equal to ground or common. (See, for example, FIG. 8B).

The integrated circuit may include reference generation circuitry 120 to generate or provide one, some or all of the reference voltages and/or reference currents employed herein. Such circuitry is well known to those skilled in the art.

In operation, with reference to FIGS. 4C, 4D, 5A, 6A, 7C, 8B and 10A, in one exemplary embodiment, read circuitry 100 includes (i) a precharge phase, condition or state wherein certain portions and/or nodes of read circuitry 100 are placed in a predetermined state and (ii) a data sense and sample phase, condition or state wherein the memory cell provides information (for example, a current and/or voltage signal) on the bit line which is read, sensed, sampled, detected and/or determined by sense amplifier circuitry 102. In a precharge condition or state, the precharge control signal is asserted and the bit line is coupled to a reference voltage which, in this embodiment, is ground or common. Shortly before or shortly after the precharge control signal is deasserted, the selection signal(s) is/are applied to the memory cell to select and couple a particular memory cell to the bit line. For example, in FIG. 4D, a suitable memory cell selection signal (V_WLRD) is applied to the gate of transistor 14, via word line 28. Notably, in certain memory cell architectures, a second temporally varying memory cell selection signal may be applied to the source region of transistor 14 via source line 30.

In the context of the embodiment of FIG. 4D, it may be advantageous to select/enable memory cell 12 prior to the completion or the conclusion of the precharge phase. In this way, the data sense and sample phase of the read operation commences immediately after the precharge control signal is deasserted and transistor 118 is disabled. At this point, in those situations where the selected memory cell stores a logic high data state, the amplitude of the voltage on bit line 32 is “permitted” to increase in response to a current (I_bitcell) which flows on bit line 32 from the selected memory cell 12 (in response to suitable control signals applied to gate of transistor 14, via word line 28, and/or the source region of transistor 14, via source line 30).

Notably, in those situations where sense amplifier circuitry 102 employs the sense amplifier circuitry described and illustrated in U.S. Provisional Patent Application Ser. No. 60/967,605 (Inventor: Philippe Graber, Filed: Sep. 6, 2007, Title: “Sense Amplifier Circuitry for Integrated Circuit Having Memory Cell Array, and Method of Operating Same”), it may be advantageous to include a suitable time delay between the precharge phase and the data sense and sample phase of the read operation. In this regard, during the delay operation, the various nodes and/or elements of read circuitry 100 and, in particular, various nodes and elements of the particular sense amplifier circuitry, may undergo “settling” before implementation of a read operation. In this way, when read circuitry 100 implements a read operation, optimum, (highly) predetermined, suitable and/or proper conditions may exist which facilitates highly reliable and/or highly repetitive reading, sensing, and/or sampling of the information on bit line.

With continued reference to FIGS. 4C, 4D, 5A, 6A, 7C, 8B and 10A, in those situations where the selected memory cell stores a logic high data state, current (I_bitcell) flows on the bit line and the voltage on the bit line (V_bitline) increases (via charge accumulation on the intrinsic capacitance 110 of the bit line (C_bitline)). When the amplitude of the voltage on the bit line is equal to or exceeds a threshold voltage (V_threshold) of transistor 114c (in this exemplary embodiment, reference voltage Vref₁ is ground or 0 volts), transistor 114c “turns on” and the current regulation circuitry 104 may draw or sink bit line current (I_bitcell) via the current path provided by the sensing circuitry 106. Under these circumstances, current regulation circuitry 104 sinks some or all of the current output or conducted by the memory cell (I_bitcell). Moreover, via connection of current regulation circuitry 104 to the bitline, the rise time of the amplitude of the voltage on the bit line (V_bitline) is controlled by diversion of current to current regulation circuitry 104. (See, for example, FIGS. 10B and 10C).

Thereafter, the voltage on the bit line attains a quiescent level (V_quiescent) and sense amplifier circuitry 102 reads, senses, samples, detects and/or determines the voltage on the bit line (which is representative of the logic high data state stored in the selected memory cell) via asserting the control signal, “Sample”. In response thereto, sense amplifier circuitry 102 outputs a signal which is representative of the logic high data state stored in the selected memory cell. (See, FIG. 10A).

Notably, in those memory cell array embodiments which employ current regulation techniques, the present inventions may provide a more desired and/or suitable control of the current regulation technique by limiting and/or controlling the timing of when the regulation circuitry 104 draws or sinks bit line current (I_bitcell). That is, in contrast to conventional current regulation technique and/or architectures, the present inventions prevent or inhibit current regulation circuitry 104 from drawing or sinking current from the bitline (and the bitline capacitance) until a predetermined condition exists or is sensed on the bitline and/or until a predetermined time of/in the read operation. For example, in the embodiment of FIG. 7C, before sensing circuitry 106 detects the bit line voltage (V_bitline) is equal to or exceeds a threshold voltage (of transistor 114c) greater than reference voltage Vref₁, current regulation circuitry 104 is electrically decoupled from the bit line and, as such, the voltage on the bit line (V_bitline) rapidly increases via charge accumulation on the intrinsic capacitance 110 of the bit line (C_bitline). When the predetermined condition exists or is sensed on the bitline and/or after a predetermined time of/in the read operation, sensing circuitry 106 electrically couples current regulation circuitry 104 to the bit line, which allows current regulation circuitry 104 to sink some or all of the current output from or conducted by the memory cell (I_bitcell)). As such, in the present inventions, when reading a logic high data state, the rise time (t_rise) of the amplitude of the voltage on the bit line (V_bitline) is increased (relative to conventional current regulation techniques/architectures) and the detection threshold (V_sample—ref) of sense amplifier circuitry 102 is attained and exceeded earlier (relative to conventional current regulation techniques/architectures).

With reference to FIGS. 4D, 5A, 6A, 7C, 8B and 10A, in the event that the selected memory cell stores a logic low data state, the selected memory cell provides or conducts little to no current (I_bitcell) (or an insufficient amount of current (I_bitcell)) on the bit line. Thus, the voltage on the bit line (V_bitline) does not sufficiently increase to “turn on” transistor 114c and, as such, sensing circuitry 106 does not couple current regulation circuitry 104 to node 108 to allow circuitry 104 to sink or draw some or all of the bit line current (I_bitcell). Moreover, the amplitude of the voltage on the bit line does not attain or exceed the reference voltage level (V_sample—ref) applied to sense amplifier circuitry 102 and/or a quiescent level (V_quiescent). As such, sense amplifier circuitry 102 responsively reads, senses, samples, detects and/or determines a logic low data state, as well as outputs data which is representative of that logic low data state.

Notably, in those embodiments where read circuitry 100 does not include bit line precharge circuitry 116, the operation is similar to that discussed above except that the read operation does not include a precharge phase. For the sake of brevity the discussion the data sense and sample phase of the read operation wherein the memory cell provides information (for example, a current and/or voltage signal) on the bit line which is read, sensed, sampled, detected and/or determined by sense amplifier circuitry 102.

As illustrated, the integrated circuit of the present inventions further includes memory cell selection and control circuitry. (See, FIGS. 4A-4D). Briefly, memory cell selection and control circuitry selects or enables one or more memory cells (for example, memory cells 12 of FIGS. 4B and 4D) to facilitate reading data therefrom and/or writing data thereto by, depending on the type of memory cell, applying one or more control signals on one or more word lines and/or control lines (see, FIGS. 4A and 4C) and/or applying one or more control signals on one or more word lines and/or source lines (see, FIGS. 4B and 4D). The memory cell selection and control circuitry may generate such control signals using address data, for example, row address data. Indeed, memory cell selection and control circuitry may include a conventional word line decoders, source line decoders, word line drivers and/or source line drivers, There are many different control/selection techniques (and circuitry therefor) to implement the memory cell selection technique. All such control/selection techniques, and circuitry therefor, whether now known or later developed, are intended to fall within the scope of the present inventions including those incorporated by reference herein (as discussed above).

As mentioned above, the present inventions may be implemented in an integrated circuit that is a logic device which includes a memory portion and logic portion (see, for example, FIGS. 11A and 11C), or an integrated circuit that is primarily a memory device (see, for example, FIG. 11B). The logic device may be, for example, a processor, controller, field programmable gate array, state machine, and/or a device including same. Indeed, the present inventions may be implemented in any device employing a memory array and read circuitry.

Further, as mentioned above, the present inventions may be employed in conjunction with any memory cell technology now known or later developed. For example, the present inventions may be implemented in conjunction with a memory array, having a plurality of memory cells each including an electrically floating body transistor. (See, for example, (1) U.S. Pat. No. 6,969,662, (2) U.S. Pat. No. 7,301,838, (3) U.S. Pat. No. 7,301,838, (4) Okhonin, U.S. Patent Application Publication No. 2007/0138530, (“Electrically Floating Body Memory Cell and Array, and Method of Operating or Controlling Same”), and (5) Okhonin et al., U.S. Patent Application Publication No. 2007/0187775, (“Multi-Bit Memory Cell Having Electrically Floating Body Transistor, and Method of Programming and Reading Same”). For example, the memory cell may consist of a PD or a FD SOI or transistor (or transistor formed on or in bulk material/substrate) having a gate, which is disposed adjacent to the electrically floating body and separated therefrom by a gate dielectric. The body region of the transistor is electrically floating in view of the insulation or non-conductive region (for example, in bulk-type material/substrate) disposed beneath the body region. The state of memory cell is determined by the concentration of charge within the body region of the SOI transistor. The entire contents of these U.S. Patent Applications, including, for example, the inventions, features, attributes, architectures, configurations, materials, techniques and advantages described and illustrated therein, are hereby incorporated by reference herein. For the sake of brevity, those discussions will not be repeated;

rather those discussions (text and illustrations), including the discussions relating to the memory cell, architecture, layout, structure, are incorporated by reference herein in its entirety.

The memory cells of the memory cell array may be comprised of N-channel, P-channel and/or both types of transistors. Indeed, circuitry that is peripheral to the memory array (for example, sense amplifiers or comparators, row and column address decoders, as well as line drivers (not illustrated in detail herein)) may include P-channel and/or N-channel type transistors. Where N-channel type transistors or P-channel type transistors are employed as memory cells in the memory array(s), suitable write and read voltages are well known to those skilled in the art (and in view of the U.S. Patents and U.S. Patent Applications incorporated herein by reference).

Moreover, the present inventions may be implemented in conjunction with any memory cell array configuration and/or arrangement of the memory cell array. In this regard, integrated circuit device (for example, memory or logic device) may include a plurality of memory cell arrays, each having a plurality of memory cells, wherein the read circuitry of the present invention may be shared between a plurality of memory cell arrays or dedicated to one memory cell array. For example, the present inventions may be employed in any architecture or layout and/or technique of sensing data from memory cells of a memory cell array. For example, read circuitry 100 may be employed in the architectures, circuitry and techniques described and illustrated in U.S. Patent Application Publication No. 2007/0241405, by Popoff, (“Semiconductor Memory Array Architecture, and Method of Controlling Same”), the application being incorporated herein by reference in its entirety. Briefly, with reference to FIGS. 12A and 12B, in one embodiment, reading and programming circuitry includes read circuitry 100a which may be selectively coupled to bit lines 32a and 32c, and read circuitry 100b coupled to bit lines 32b and 32d. In a read operation, one of the bit lines (i.e., the active bit line) is selectively connected to the data sense circuitry in order to sense the data state stored in a memory cell and/or write a data state into a memory cell which is associated with the selected bit line. For example, during a read operation, one of the bit lines 32a and 32c is connected to read circuitry 100a. Similarly, one of the bit lines 32b and 32d is connected to read circuitry 100b.

With reference to FIG. 13, in one embodiment, the active bit line is selected by memory cell selection circuitry using, for example, one or more bits of the row address (for example, the MSB or LSB). Notably, the other bit line is disconnected from the read circuitry 100. Again, the architectures, circuitry and/or techniques described and illustrated in U.S. Non-Provisional Patent Application Ser. No. 11/787,718 are incorporated by reference herein.

Further, the memory cells may be arranged, configured and/or controlled using any of the memory cell arrays, architectures and/or control/operation techniques. For example, the memory cells may be arranged, configured and/or controlled using any of the memory cell arrays, architectures and/or control/operation techniques described and illustrated in the following U.S. Patent Applications:

(1) application Ser. No. 10/450,238, which was filed by Fazan et al. on Jun. 10, 2003 and entitled “Semiconductor Device” (now U.S. Pat. No. 6,969,662);

(2) application Ser. No. 10/487,157, which was filed by Fazan et al. on Feb. 18, 2004 and entitled “Semiconductor Device” (now U.S. Pat. No. 7,061,050);

(3) application Ser. No. 10/829,877, which was filed by Ferrant et al. on Apr. 22, 2004 and entitled “Semiconductor Memory Cell, Array, Architecture and Device, and Method of Operating Same” (now U.S. Pat. No. 7,085,153);

(4) application Ser. No. 11/079,590, which was filed by Ferrant et al. and entitled “Semiconductor Memory Device and Method of Operating Same” (now U.S. Pat. No. 7,187,581); and (5) application Ser. No. 10/941,692, which was filed by Fazan et al. on Sep. 15, 2004 and entitled “Low Power Programming Technique for a One Transistor SOI Memory Device & Asymmetrical Electrically Floating Body Memory Device, and Method of Manufacturing Same” (now U.S. Pat. No. 7,184,298).

Notably, the present inventions may be fabricated using well known techniques and/or materials. Indeed, any fabrication technique and/or material, whether now known or later developed, may be employed to fabricate the memory cells, transistors and/or memory array(s). For example, the present inventions may employ silicon (whether bulk-type or SOI), germanium, silicon/germanium, gallium arsenide or any other semiconductor material in which transistors may be formed. Indeed, the electrically floating body transistors, memory cells, and/or memory array(s) may employ the techniques described and illustrated in U.S. Pat. No. 7,335,934, by Fazan, (“Integrated Circuit Device, and Method of Fabricating Same”) and/or U.S. Patent Application Publication No. 2007/0085140, by Bassin, (“One Transistor Memory Cell having a Strained Electrically Floating Body Region, and Method of Operating Same”) (hereinafter collectively “Integrated Circuit Device Patent Applications”). The entire contents of the Integrated Circuit Device Patent Applications, including, for example, the inventions, features, attributes, architectures, configurations, materials, techniques and advantages described and illustrated therein, are hereby incorporated by reference herein.

Further, in one embodiment, an integrated circuit device includes memory section (having a plurality of memory cells, for example, PD or FD SOI memory transistors) and logic section (having, for example, high performance transistors, such as FinFET, multiple gate transistors, and/or non-high performance transistors (for example, single gate transistors that do not possess the performance characteristics of high performance transistors)). Moreover, as noted above, the memory cell and/or memory cell array, as well as the circuitry of the present inventions may be implemented in an integrated circuit device having a memory portion and a logic portion (see, for example, FIGS. 11A and 11C), or an integrated circuit device that is primarily a memory device (see, for example, FIG. 11B). The memory array may include a plurality of memory cells arranged in a plurality of rows and columns wherein each memory cell includes a transistor (whether fabricated in a bulk-type material or SOI material), for example, an electrically floating body transistor. The memory arrays may be comprised of N-channel, P-channel and/or both types of transistors. Indeed, circuitry that is peripheral to the memory array (for example, data sense circuitry (for example, sense amplifiers or comparators), memory cell selection and control circuitry (for example, word line and/or source line drivers), as well as row and column address decoders) may include P-channel and/or N-channel type transistors.

There are many inventions described and illustrated herein. While certain embodiments, features, attributes and advantages of the inventions have been described and illustrated, it should be understood that many others, as well as different and/or similar embodiments, features, attributes and advantages of the present inventions, are apparent from the description and illustrations. As such, the above embodiments of the inventions are merely exemplary. They are not intended to be exhaustive or to limit the inventions to the precise forms, techniques, materials and/or configurations disclosed. Many modifications and variations are possible in light of this disclosure. It is to be understood that other embodiments may be utilized and operational changes may be made without departing from the scope of the present inventions. As such, the scope of the inventions is not limited solely to the description above because the description of the above embodiments has been presented for the purposes of illustration and description.

For example, the read circuitry according to certain aspects of the present inventions may be implemented in conjunction with one or more circuits (for example, one or more drivers, inverters and/or latches) to, for example, more fully establish, obtain/provide a predetermined or proper polarity of, and/or maintain the data read, sensed, sampled and/or determined by sense amplifier circuitry 102 during the read/data sense operation and output on signal line 102b. (See, for example, FIGS. 4A-4D, 5A and 5B).

Further, read circuitry of the present inventions may employ any of the configurations of the sense amplifier circuitry, sensing circuitry, current regulation circuitry and bit line precharge circuitry described, incorporated by reference and/or illustrated herein. All permutations and combinations of configurations for read circuitry are intended to fall within the scope of the present inventions. Moreover, all permutations and combinations of configurations of the read circuitry may be implemented in conjunction with any of the memory cells, memory cell technologies, memory cell array architectures and memory types described, incorporated by reference and/or illustrated herein. For the sake of brevity all permutations and combinations will not be discussed in detail but are intended to fall within the scope of the present inventions.

As mentioned above, each of the aspects of the present inventions, and/or embodiments thereof, may be employed alone or in combination with one or more of such aspects and/or embodiments. For the sake of brevity, those permutations and combinations will not be discussed separately herein. As such, the present inventions are neither limited to any single aspect (nor embodiment thereof), nor to any combinations and/or permutations of such aspects and/or embodiments.

Moreover, the above embodiments of the present inventions are merely exemplary embodiments. They are not intended to be exhaustive or to limit the inventions to the precise forms, techniques, materials and/or configurations disclosed. Many modifications and variations are possible in light of the above teaching. It is to be understood that other embodiments may be utilized and operational changes may be made without departing from the scope of the present inventions. As such, the foregoing description of the exemplary embodiments of the inventions has been presented for the purposes of illustration and description. Many modifications and variations are possible in light of the above teaching. It is intended that the scope of the inventions not be limited solely to the description above.

The exemplary embodiments above included an architecture wherein current regulation circuitry 104 draws or sinks current after sensing circuitry 106 senses, detects and/or determines a predetermined condition exists or is sensed on the bit line and/or until a predetermined time of/in the read operation. (See, for example, FIGS. 4A-4D and 7A-7C). In another exemplary embodiment, the present inventions prevent or inhibit current regulation circuitry 104 from providing or sourcing current to the bit line (and the bit line capacitance) until sensing circuitry 106 senses, detects and/or determines a predetermined condition exists or is sensed on the bit line and/or until a predetermined time of/in the read operation. (See, for example, FIGS. 7D, 14A and 14B). In this regard, transistor 114d turns “on” upon sensing, detecting and/or determining a predetermined condition exists or is sensed on the bit line (for example, the amplitude of the bit line voltage falls one threshold voltage below the reference voltage of Vref₁). Thus, the present inventions may be implemented in those instances where (i) current regulation circuitry 104 draws or sinks current during the read operation or (ii) current regulation circuitry 104 provides or sources current during the read operation.

Notably, the operation of exemplary read circuitry 100 of the embodiment of FIGS. 14A and 14B is similar to that described above with respect to, for example, the embodiments of FIGS. 4A-4D except current regulation circuitry 104 provides or sources current during the read operation rather than draws or sinks current during the read operation (as discussed above). Briefly, during implementation of the read operation, the current conducted by the memory cell (i.e., I_bitcell), or a portion thereof, is supplied through node 108. Where the selected memory cell stores a predetermined logic state (for example, a high data state), a portion or all of the current (i.e., I_bitcell) discharges the intrinsic capacitance of the bit line, which is represented by capacitor 110 (C_bitline). In addition, once the amplitude of the voltage on the bit line (V_bitline) is at or below a predetermined value, a portion of the current conducted by the memory cell (i.e., I_bitcell) is sourced or provided by current regulation circuitry 104 (i.e., I_reg—cir). The sense amplifier 102 employs the voltage on signal line 102a (V_bitline) to read, sense, sample, detect and/or determine the data state stored in memory cell coupled to the bit line (for example, memory cell 12 coupled to bit line 32). Thus, in the illustrated embodiment, a voltage signal is employed to determine the state of the memory cell.

In the event that the selected memory cell stores a different logic state (for example, a logic low data state), the selected memory cell conducts little to no current (I_bitcell) (or an insufficient amount of current (I_bitcell)) from the bit line. Thus, the voltage on the bit line (V_bitline) does not sufficiently decrease to “turn on” transistor 114c and, as such, sensing circuitry 106 does not couple current regulation circuitry 104 to node 108 to allow circuitry 104 to source or provide some or all of the bit line current (I_bitcell). Moreover, the amplitude of the voltage on the bit line does not decrease below the reference voltage level (V_sample—ref) applied to sense amplifier circuitry 102 and/or a quiescent level (V_quiescent). As such, sense amplifier circuitry 102 responsively reads, senses, samples, detects and/or determines, in this example, a logic low data state, as well as outputs data which is representative of that logic low data state.

In the embodiment of FIGS. 7D, 14A and 14B, it may be advantageous to employ a Vref₁ that is equal to the positive supply value. Moreover, the amplitude of the voltage on the bit line is “referenced” to the positive supply (for example, the precharge voltage). In this way, for example, transistor 114d turns “on” upon sensing, detecting and/or determining a predetermined condition exists or is sensed on the bit line (for example, the amplitude of the bit line voltage falls one threshold voltage below the reference voltage of Vref₁ of the positive supply. Indeed, sensing circuitry 106 may include or employ any of the embodiments described and illustrated herein.

Notably, although generally described herein as DC reference signals (for example, ground or supply) the reference potential may be AC and/or DC signals.

In this document, the term “circuit” may mean, among other things, a single component (for example, electrical/electronic) or a multiplicity of components (whether in integrated circuit form or otherwise), which are active and/or passive, and which are coupled together to provide or perform a desired function. The term “circuitry” may mean, among other things, a circuit (whether integrated or otherwise), a group of such circuits, one or more processors, one or more state machines, one or more processors implementing software, or a combination of one or more circuits (whether integrated or otherwise), one or more state machines, one or more processors, and/or one or more processors implementing software. The term “data” may mean, among other things, a current or voltage signal(s) whether in an analog or a digital form. The term “to sense a/the data state stored in memory cell” means, among other things, to sample, to sense, to read and/or to determine a/the data state stored in memory cell; “sensing a/the data state stored in memory cell”, “sensed a/the data state stored in memory cell” or the like shall have the same meaning.

Claims

1. A method of reading a memory cell comprising: applying read control signals to a selected memory cell of a plurality of memory cells arranged in a matrix of rows and columns, wherein each memory cell of the plurality of memory cells comprises an electrically floating body transistor including a body region which is electrically floating and configured to store one of a plurality of data states including (i) a first data state representative of a first charge in the body region of the electrically floating body transistor, and (ii) a second data state representative of a second charge in the body region of the electrically floating body transistor;generating a current on a bit line coupled to the selected memory cell in response to the read control signals, wherein the current is representative of a data state stored in the selected memory cell;controlling the generated current on the bit line by the selected memory cell by sinking or sourcing at least a portion of the current on the bit line generated by the selected memory cell;sensing a first voltage potential on the bit line to determine the data state stored in the selected memory cell based at least in part on a reference signal and the first voltage potential on the bit line, wherein sinking or sourcing at least a portion of the current on the bit line generated by the selected memory cell includes sinking or sourcing a substantial portion of the current on the bit line generated by the selected memory cell after sensing the first voltage potential on the bit line; andoutputting a data state signal which is representative of the data state stored in the selected memory cell.

2. The method of claim 1, wherein controlling the generated current on the bit line comprises sensing a second voltage potential on the bit line.

3. The method of claim 2, wherein the second voltage potential on the bit line has an amplitude based at least in part on an amount of the current generated on the bit line.

4. The method of claim 3, wherein controlling the generated current on the bit line further comprises comparing the second voltage potential on the bit line to a threshold voltage potential.

5. The method of claim 4, wherein controlling the generated current on the bit line further comprises providing an electrical path to sink the at least a portion of the current on the bit line generated by the selected memory cell if the second voltage potential on the bit line exceeds the threshold voltage potential.

6. The method of claim 4, wherein controlling the generated current on the bit line further comprises providing an electrical path to sink the at least a portion of the current on the bit line generated by the selected memory cell if the second voltage potential on the bit line equals to the threshold voltage potential.

7. The method of claim 4, wherein controlling the generated current on the bit line further comprises providing an electrical path to source the at least a portion of the current on the bit line generated by the selected memory cell if the second voltage potential on the bit line is less than the threshold voltage potential.

8. The method of claim 1, wherein sinking or sourcing at least a portion of the current on the bit line further comprises applying a regulation current that is substantially equal to the at least a portion of the current on the bit line.

9. The method of claim 8, wherein the regulation current is a constant current.

10. The method of claim 1, further comprising applying a precharge voltage potential to the bit line in order to establish a predetermined condition on the bit line.

11. The method of claim 10, wherein the precharge voltage potential is substantially equal to ground or common.

12. The method of claim 11, wherein the read control signals are applied to the selected memory cell prior to completing the establishment of the predetermined condition on the bit line.

13. The method of claim 1, wherein applying read control signals to the selected memory cell comprises applying a first selection signal via a word line to a gate region of the selected memory cell.

14. The method of claim 13, wherein applying read control signals to the selected memory cell further comprises applying a second selection signal via a source line to a source region of the selected memory cell.

15. The method of claim 1, wherein the data state stored in the selected memory cell is determined by comparing the first voltage potential with a voltage potential of the reference signal.

16. The method of claim 15, wherein a logic high is stored in the selected memory cell if the first voltage potential equals or exceeds the voltage potential of the reference signal.

17. The method of claim 15, wherein a logic low is stored in the selected memory cell if the first voltage potential is less than the voltage potential of the reference signal.

18. At least one non-transitory processor readable storage medium storing a computer program of instructions configured to be readable by at least one processor for instructing the at least one processor to execute a computer process for performing the method as recited in claim 1.