Claims
- 1. A remover solution for photoresist which consists essentially of, in admixture:
- (A) an aliphatic alcoholic solvent selected from the group consisting of methyl alcohol, ethyl alcohol, propyl alcohol, 3-methyl-3-methoxy butyl alcohol, ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, ethylene glycol monobutyl ether, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, propylene glycol monomethyl ether and dipropylene glycol monomethyl ether in a weight fraction in the range from 35% to 80%;
- (B) an organic solvent selected from the group consisting of halogenated hydrocarbon solvents, unhydroxylated ether solvents selected from the group consisting of dioxane, tetrahydrofuran, diethylene glycol dimethyl ether, triethylene glycol dimethyl ether, tetraethylene glycol dimethyl ether, ethylene glycol diethyl ether, diethylene glycol diethyl ether and diethylene glycol dibutyl ether, and unhalogenated aromatic solvents in a weight fraction in the range from 10% to 40%; and
- (C) a quaternary ammonium salt in a weight fraction in the range from 0.1% to 25%.
- 2. The remover solution as claimed in claim 1 wherein the quaternary ammonium salt as the component (C) is selected from the group consisting of tetramethyl ammonium hydroxide, trimethyl hydroxyethyl ammonium hydroxide, tetra(hydroxyethyl) ammonium hydroxide and methyl tri(hydroxyethyl) ammonium hydroxide.
- 3. The remover solution as claimed in claim 1 wherein the halogenated hydrocarbon solvent as the component (B) is selected from the group consisting of 1,2-dichlorobenzene, tetrachloroethylene, trichloroethylene, methylene chloride, 1,1,1-trichloroethane, chlorobenzene, 1,2,4-trichlorobenzene, bromobenzene, 1,2-dibromobenzene, p-chlorotoluene and m-chlorotoluene.
- 4. The remover solution as claimed in claim 1 wherein the unhalogenated aromatic solvent as the component (B) is selected from the group consisting of benzyl alcohol, xylene, benzene, toluene, ethyl benzene, p-cresol, amyl benzene, naphthalene and a mixture of tri- and tetramethyl benzenes, alkyl toluenes, branched alkyl benzenes, cymene, diethyl benzene, naphthalene and mono- and dimethyl naphthalenes.
- 5. A process comprising applying a photopolymerizable photoresist material onto a substrate: exposing the photopolymerizable material to actinic rays through a mask, whereby to produce a desired pattern in said material; developing said material, whereby forming a patterned photoresist layer; and then removing the patterned photoresist layer by treating such with the remover solution claimed in claim 1.
- 6. The method as claim in claim 5 wherein the remover solution is as claimed in claim 2.
- 7. The method as claimed in claim 5 wherein the remover solution is as claimed in claim 3.
- 8. The method as claimed in claim 5 wherein the remover solution is as claimed in claim 4.
Priority Claims (2)
Number |
Date |
Country |
Kind |
62-224109 |
Sep 1987 |
JPX |
|
63-54896 |
Mar 1988 |
JPX |
|
Parent Case Info
This application is a continuation-in-part of application Ser. No. 236,479 filed Aug. 25, 1988, now abandoned.
US Referenced Citations (8)
Foreign Referenced Citations (2)
Number |
Date |
Country |
3050838 |
Mar 1988 |
JPX |
05314 |
Sep 1987 |
WOX |
Continuation in Parts (1)
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Number |
Date |
Country |
Parent |
236479 |
Aug 1988 |
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