1. Technical Field
The disclosure relates in general to a replacement gate process and device manufactured using the same, and more particularly to the replacement gate process capable of controlling a gate height of a device and the device manufactured using the same.
2. Description of the Related Art
Size of semiconductor device has been decreased for these years. Reduction of feature size, improvements of the rate, the efficiency, the density and the cost per integrated circuit unit are the important goals in the semiconductor technology. The electrical properties (such as junction leakage) of the device have to be maintained even improved with the decrease of the size, to meet the requirements of the commercial products in applications. The high k-metal gate (HKMG) technique has been developed, and the logic device with the HKMG structure offers quite a few advantages in terms of power reduction and performance improvements, particularly in the datapath and other high-speed areas.
The high k-metal gate (HKMG) process could be divided into two common process of gate-first and gate-last. Taken the gate-last HKMG process (also known as the replacement gate process) for example, a dummy gate is formed by material such as polysilicon or amorphous silicon, and the dummy gate is then removed and replaced by a metal gate. In another aspect, a high-K dielectric film is one of the important features in the semiconductor manufacturing of memory applications, which increases the capacity of the memory. In the HKMG process, the high-K dielectric film could be formed before manufacturing the dummy gate, which is a so-called high K first-HKMG process. The high-K dielectric film could be formed after the manufacture and removal of the dummy gate, which is a so-called high K last-HKMG process. No matter which process is adopted to pattern a HKMG stack, the gate height of the gate and topography of the stack should be precisely controlled for obtaining a semiconductor device with excellent electrical performance.
In the current HKMG process, the spacers (ex: the first spacer 141 and the second spacer 142) and the contact etch stop layer 16 are made of different materials. For example, the first spacer 141, the second spacer 142 and the contact etch stop layer 16 are oxide, nitride deposited by hollow cathode discharge (HCD), and nitride, respectively. Those materials are low etch resistance to the dry-etching or wet-etching removal of the dummy gate 12. In order to keep the final gate height HG of the structure, a higher dummy gate 12 is required to be constructed initially in this conventional process. In the 20 nm HKMG structure manufactured by the process of
The disclosure is directed to a replacement gate process and device manufactured using the same, which is capable of controlling the gate height and topography, thereby improving the electrical performance of the device.
According to the disclosure, a replacement gate process is disclosed, comprising:
providing a substrate, and a dummy gate structure formed on the substrate, wherein the dummy gate structure comprises a dummy layer on the substrate, a hard mask layer on the dummy layer, spacers at two sides of the dummy layer and the hard mask layer, and a contact etch stop layer (CESL) covering the substrate, the spacers and the hard mask layer, wherein the spacers and the CESL are made of the same material;
removing a top portion of the CESL to expose the hard mask layer;
removing the hard mask layer; and
removing the dummy layer to form a trench.
According to the disclosure, a semiconductor device is provided, comprising a substrate; spacers formed oppositely on the substrate and spaced apart to form a trench therebetween; a patterned CESL formed at outsides of the spacers and covering the substrate; wherein the spacers and the CESL are made of the same material.
The embodiment of the disclosure provides a replacement gate process and the device manufactured using the process of the embodiment, which is capable of controlling the gate height and topography of the device thereby improving the electrical performance. Due to the high etching selectivity to the materials and particular procedures of the embodiment, the lower height of the dummy gate could be constructed to achieve the same final gate height manufactured by the conventional process requiring the higher dummy gate.
The embodiments are described in details with reference to the accompanying drawings. The method of the disclosure could be applied to the high K-metal gate process to form a transistor structure, such as MOSFET (field-effect transistor) or the Fin FET. The similar elements of the embodiments are designated with similar reference numerals. Also, it is also important to point out that the illustrations may not be necessarily be drawn to scale, and that there may be other embodiments of the present disclosure which are not specifically illustrated. Thus, the specification and the drawings are to be regard as an illustrative sense rather than a restrictive sense. Moreover, the steps and elements in details of the embodiments could be modified or changed according to the actual needs of the practical applications. The disclosure is not limited to the descriptions of the embodiments.
As shown in
In the embodiment, the dummy gate structure further includes an interlayer dielectric (ILD) layer 27 formed on the contact etch stop layer 26. In the embodiment, the dummy layer 221 is a polysilicon layer, or an amorphous silicon layer. The spacers 24 could be one layer, or multi-layer such as the first spacer 241 and the second spacer 242 depicted in
Furthermore, the spacers 24 and the contact etch stop layer 26 of the embodiment are made of the same material, while the material of the hard mask layer 222 layer is different from that of the spacers 24 and the contact etch stop layer 26. In one embodiment, the spacers 24 (ex: the first spacer 241 and the second spacer 242) and the contact etch stop layer 26 are made of SICN, formed by atomic layer deposition (ALD). In one embodiment, the hard mask layer 222 is (but not limited to) made of nitrite or oxide; for example, the hard mask layer 222 is made of silicon nitrite (SIN).
As shown in
As shown in
As shown in
Afterward, the dummy layer 221 is removed to form a trench 28, as shown in
The process of the first embodiment is applied to a high K last-HKMG structure. After steps illustrated in
In the embodiment, material examples of the interfacial layer include, but are not limited to, oxides. Material examples of the high-k gate dielectric layer include, but are not limited to, hafnium oxide, hafnium silicon oxide, lanthanum oxide, zirconium oxide, zirconium silicon oxide, tantalum oxide, titanium oxide, barium strontium titanium oxide, barium titanium oxide, strontium titanium oxide, yttrium oxide, aluminum oxide, lead scandium tantalum oxide, lead zinc niobate and other suitable materials. Materials of the metal gate could be, but are not limited to, the work function metals suitable for adjusting the work functions of N/P-type transistors, and the metals with low resistance. Examples of the work function metals include TiN, TaN, titanium carbide (TiC), tantalum carbide (TaC), tungsten carbide (WC), or aluminum titanium nitride (TiAlN), titanium aluminide (TiAl), zirconium aluminide (ZrAl), tungsten aluminide (WAl), tantalum aluminide (TaAl), or hafnium aluminide (HfAl). Examples of the metals with low resistance include Al, Cu and other suitable materials.
The disclosure could be applied to a high K first-HKMG structure, and the method of the application is similar to the procedures illustrated in
The disclosure could be applied to a fin field electric transistor (Fin-FET), and the method of the application is similar to the procedures illustrated in
According to the aforementioned descriptions, a lower height of the dummy gate could be constructed by adopting the methods of the embodiments to achieve the same final gate height manufactured by the conventional process requiring the higher dummy gate. Decrease of gate height would reduce the considerable effect of ion implantation process on the electrical performance of the device. For example, the shadow effect induced by (lightly doped drain LDD) implantation is reduced. Please compare
While the disclosure has been described by way of example and in terms of the exemplary embodiment(s), it is to be understood that the disclosure is not limited thereto. On the contrary, it is intended to cover various modifications and similar arrangements and procedures, and the scope of the appended claims therefore should be accorded the broadest interpretation so as to encompass all such modifications and similar arrangements and procedures.
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