Patent Application
20250034744
The present invention relates to a resistor for a plating apparatus, and a plating apparatus.
Conventionally, a wiring, bumps (protruding electrodes) and others are formed on a surface of a target object such as a semiconductor wafer or a printed circuit board. As a method of forming the wiring, bumps and others, an electroplating method is known.
It is known that uniformity of a thickness of plating formed on a target object is enhanced by disposing a resistor for adjusting an electric field between a circular substrate, such as a wafer, and an anode, in a plating apparatus for an electroplating method (see PTL 1). A plating apparatus is proposed in which electric field adjustment is made wider and freer by making the size or shape of each hole of a resistor variable (see PTL 2).
In a plating apparatus of PTL 1, a resistor having a size of each hole, arrangement of holes and the like appropriately set depending on specifications of a target object is required to be placed. Therefore, a work and cost for procurement and replacement of the resistor are incurred. In a plating apparatus of PTL 2, a throttle mechanism capable of changing the size of the hole in a central portion of a resistor is described, but there are structural restrictions on a range for changing the size or shape of the hole. Plating formed on the target object has a thickness that may depend on a position of the plating on the target object, and it is therefore desirable to flexibly change the size or shape of at least some of a plurality of through holes formed in the resistor.
The present invention has been made in view of the above problems. One object of the present invention is to provide a resistor for a plating apparatus, and a plating apparatus, capable of enhancing uniformity of a thickness of plating formed on a target object by adjusting the resistor including a plurality of through holes without need to remove the resistor from the plating apparatus.
According to one aspect of the present invention, a resistor for a plating apparatus, for adjusting an electric field, the resistor being disposed between an anode and a holder holding a target object to be plated in the plating apparatus, is provided. The resistor for the plating apparatus includes a first resistance member having a first surface and including a plurality of first through holes formed open on the first surface, and a second resistance member having a second surface and including a plurality of second through holes formed open on the second surface, the first resistance member and the second resistance member are arranged with the first surface and the second surface facing each other, and a size of overlap between the plurality of first through holes and the plurality of second through holes is variable.
According to another aspect of the present invention, a plating apparatus is provided. This plating apparatus includes a plating tank, an anode disposed in the plating tank, a holder holding a target object to be plated, and the above resistor for the plating apparatus.
Hereinafter, embodiments of the present invention will be described with reference to the drawings. In the drawings described below, the same or corresponding components are denoted with the same reference signs and will not be described in duplicate.
Each load port 100 is a module for loading a substrate that is a target object to be plated housed in a cassette, such as a FOUP (not illustrated), to the plating apparatus 1000 and unloading the substrate from the plating apparatus 1000 to the cassette. While four load ports 100 are arranged in the horizontal direction in this embodiment, the number of load ports 100 and arrangement of the load ports are arbitrary. The transfer robot 110 is a robot for transferring the substrate and is configured to grip or release the substrate between the load port 100, each aligner 120, and the transfer device 700. The transfer robot 110 and the transfer device 700 can perform delivery and receipt of the substrate via a temporary placement table (not illustrated) to grip or release the substrate between the transfer robot 110 and the transfer device 700.
The aligner 120 is a module for adjusting a position of an orientation flat, a notch, or the like of the substrate in a predetermined direction. While two aligners 120 are arranged in a horizontal direction in this embodiment, the number of aligners 120 and arrangement of the aligners are arbitrary. The pre-wet module 200 wets a surface to be plated of the substrate before a plating process with a process liquid (pre-wet liquid), such as pure water or deaerated water, to replace air inside a pattern formed on the surface of the substrate with the process liquid. The pre-wet module 200 is configured to perform a pre-wet process to facilitate supplying a plating solution to the inside of the pattern by replacing the process liquid inside the pattern with the plating solution during plating. While two pre-wet modules 200 are arranged in a vertical direction in this embodiment, the number of pre-wet modules 200 and arrangement of the pre-wet modules are arbitrary.
For example, the pre-soak module 300 is configured to remove an oxidized film having a large electrical resistance present on the surface of a seed layer formed on the surface to be plated of the substrate before the plating process by etching with a process liquid, such as sulfuric acid and hydrochloric acid, and perform a pre-soak process of cleaning or activating the surface of a plating base layer. While two pre-soak modules 300 are arranged in the vertical direction in this embodiment, the number of pre-soak modules 300 and arrangement of the pre-soak modules are arbitrary. The plating module 400 performs the plating process on the substrate. There are two sets of 12 plating modules 400 arranged by three in the vertical direction and by four in the horizontal direction, and 24 plating modules 400 in total are provided in this embodiment, but the number of plating modules 400 and arrangement of the plating modules are arbitrary.
Each cleaning module 500 is configured to perform a cleaning process on the substrate to remove the plating solution or the like left on the substrate after the plating process. While two cleaning modules 500 are arranged in the vertical direction in this embodiment, the number of cleaning modules 500 and arrangement of the cleaning modules are arbitrary. Each spin rinse dryer 600 is a module for rotating the substrate after the cleaning process at high speed and drying the substrate. While two spin rinse dryers are arranged in the vertical direction in this embodiment, the number of spin rinse dryers and arrangement of the spin rinse dryers are arbitrary. The transfer device 700 is a device for transferring the substrate between the plurality of modules inside the plating apparatus 1000. The control module 800 is configured to control the plurality of modules in the plating apparatus 1000 and can be configured of, for example, a general computer including input/output interfaces with an operator or a dedicated computer.
An example of a sequence of plating processes by the plating apparatus 1000 will be described. First, the substrate housed in the cassette is loaded on the load port 100. Subsequently, the transfer robot 110 grips the substrate from the cassette at the load port 100 and transfers the substrate to the aligners 120. Each aligner 120 adjusts the position of the orientation flat, the notch, or the like of the substrate in the predetermined direction. The transfer robot 110 grips or releases the substrate whose direction is adjusted with the aligners 120 to the transfer device 700.
The transfer device 700 transfers the substrate received from the transfer robot 110 to the pre-wet module 200. The pre-wet module 200 performs the pre-wet process on the substrate. The transfer device 700 transfers the substrate on which the pre-wet process has been performed to the pre-soak module 300. The pre-soak module 300 performs the pre-soak process on the substrate. The transfer device 700 transfers the substrate on which the pre-soak process has been performed to the plating module 400. The plating module 400 performs the plating process on the substrate.
The transfer device 700 transfers the substrate on which the plating process has been performed to the cleaning module 500. The cleaning module 500 performs the cleaning process on the substrate. The transfer device 700 transfers the substrate on which the cleaning process has been performed to the spin rinse dryer 600. The spin rinse dryer 600 performs a drying process on the substrate. The transfer device 700 grips or releases the substrate on which the drying process has been performed to the transfer robot 110. The transfer robot 110 transfers the substrate received from the transfer device 700 to the cassette at the load port 100. Finally, the cassette housing the substrate is unloaded from the load port 100.
Next, a configuration of the plating module 400 will be described. Since 24 plating modules 400 in the present embodiment include the same configuration, one plating module 400 alone will be described.
The plating module 400 includes a holder 440 holding a substrate Wf with a surface to be plated Wf-a being oriented downward. The holder 440 also includes a power feeding contact for feeding power from a power source (not illustrated) to the substrate Wf. The plating module 400 includes an elevating/lowering mechanism 442 that elevates and lowers the holder 440. In one embodiment, the plating module 400 includes a rotation mechanism 448 that rotates the holder 440 about a vertical axis. The elevating/lowering mechanism 442 and the rotation mechanism 448 can be achieved by a known mechanism such as a motor.
The plating module 400 of the present embodiment is a cup type electroplating apparatus configured to immerse, in the plating solution, the substrate Wf (for example, a semiconductor wafer) held on the holder 440 with the surface to be plated Wf-a being oriented downward and apply a voltage between the substrate Wf and an anode 430, thereby precipitating a conductive film on the surface of the substrate Wf. When the plating module 400 includes the rotation mechanism 448, a plating layer is uniformly formed on the substrate Wf by performing the plating process on the substrate Wf while rotating the substrate, so that plating formed on the substrate Wf has a thickness made more uniform.
The plating module 400 includes a membrane 420 that separates an inside of the inner tank 412 in the vertical direction. The inside of the inner tank 412 is divided into a cathode region 422 and an anode region 424 by the membrane 420. The cathode region 422 and the anode region 424 are each filled with the plating solution. The present embodiment illustrates an example in which the membrane 420 is provided, but the membrane 420 need not be provided.
On a bottom surface of the inner tank 412 of the anode region 424, an anode 430 is provided. In the anode region 424, an anode mask 426 for adjusting electrolysis between the anode 430 and the substrate Wf is disposed. The anode mask 426 is a substantially plate-shaped member made of, for example, a dielectric material and provided on a front surface of (above) the anode 430. The anode mask 426 includes an opening through which a current flowing between the anode 430 and the substrate Wf passes. The present embodiment illustrates an example where the anode mask 426 is provided, but the anode mask 426 need not be provided. The membrane 420 may be provided in the opening of the anode mask 426.
In the cathode region 422, a resistor 450 is disposed between the anode 430 and the holder 440. In the example of the present embodiment, the resistor 450 faces the membrane 420. The resistor 450 is a member for adjusting an electric field in the plating solution and achieving uniformity of the plating process on the surface to be plated Wf-a of the substrate Wf.
The resistor 450 includes a first resistance member 10 and a second resistance member 20. The first resistance member 10 and the second resistance member 20 are members each having a higher electrical resistivity than the plating solution and are preferably dielectrics. The first resistance member 10 and the second resistance member 20 may be made of a metal or resin. A plurality of first through holes 911 and a plurality of third through holes 912 are formed in the first resistance member 10. The first through holes 911 and the third through holes 912 penetrate between a front surface and a back surface of the first resistance member 10 and constitute a path through which the plating solution and ions in the plating solution pass. A plurality of second through holes 920 are formed in the second resistance member 20. The second through holes 920 penetrate between a front surface and a back surface of the second resistance member 20 and constitute a path through which the plating solution and ions in the plating solution pass.
When the resistor 450 is disposed in the plating apparatus 1000, the cathode region 422 on an anode side of the resistor 450 and the cathode region 422 on a holder side of the resistor 450 are connected to each other via the third through holes 912 such that the plating solution and ions in the plating solution are movable.
In the present embodiment, a size of overlap between the first through holes 911 and the second through holes 912 as viewed in an axial direction can be varied by rotating the first resistance member 10 with respect to the second resistance member 20 about a central axis Ax of the resistor 450. Thereby, the first through holes 911 and the second through holes 912 are selectively connected. Each through hole being “connected” to another element indicates that the through holes are connected such that the plating solution and the ions in the plating solution are movable. When the first through holes 911 and the second through holes 920 are connected, the resistor 450 connects the cathode region 422 on the anode side of the resistor 450 and the cathode region 422 on the holder side of the resistor 450 through the first through holes 911 and the second through holes 920 such that the plating solution and the ions in the plating solution are movable. Hereinafter, “the axial direction” refers to the direction of the central axis Ax.
In the example of the present embodiment, the second resistance member 20 is disposed along an outside surface 451 of the resistor 450. In a plating apparatus including a resistor including a plurality of through holes, for example, with a change in a dimension of a substrate, a resist opening ratio of the substrate, recipe of a plating process or the like, uniformity of a thickness of plating formed on an outer peripheral portion of the substrate may decrease. In the present embodiment, by varying the size of the overlap between the first through holes 911 and the second through holes 920 formed in an outer peripheral portion of the resistor 450, the electric field around the first through holes 911 and the second through holes 920 can be adjusted. Therefore, the thickness of the plating formed on the substrate Wf can be made more uniform.
In the illustrated example, the resistor 450 is formed in a columnar shape around the central axis Ax. In the resistor 450, an end face on one side in the axial direction is a first outer surface S10, and an end face on the other side is a second outer surface S20. The first resistance member 10 is disposed on a first outer surface side of the resistor 450, and the second resistance member 20 is disposed on a second outer surface side (see
In the example of the present embodiment, in the inner tank 412, the first outer surface S10 is disposed to face the holder 440, the second outer surface S20 is disposed to face the anode 430, and the first resistance member 10 can be configured to rotate with respect to the second resistance member 20 fixed to the inner tank 412. Alternatively, in the inner tank 412, the first outer surface S10 may be disposed to face the anode 430, the second outer surface S20 may be disposed to face the holder 440, and the second resistance member 20 may be configured to rotate with respect to the first resistance member 10 fixed to the inner tank 412. The configuration is not limited to the configuration in which the resistance member disposed on the anode side out of the first resistance member 10 and the second resistance member 20 is fixed and the resistance member disposed on the holder side rotates, and a configuration in which the resistance member disposed on the holder side is fixed and the resistance member disposed on the anode side rotates may be employed. However, the inner tank 412 has an upper end side open so that the holder 440 (substrate Wf) can be put in, and it is therefore considered that the rotation of the resistance member by a mechanical mechanism or a manual operation for rotating the resistance member can be simplified by configuring the resistance member disposed on the holder side to be rotatable. Both the first resistance member 10 and the second resistance member 20 may be rotatable. A method for rotation is not particularly limited and may be manual. The outside surface 451 of one of the first resistance member 10 and the second resistance member 20 may be fixed to an inner surface of the inner tank 412. In particular, in such a case, when the holder 440 side is viewed from the anode 430 or when the anode 430 side is viewed from the holder 440 side, it is preferable that one member to be rotated out of the first resistance member 10 and the second resistance member 20 has a dimension smaller than a dimension of the other member to be fixed.
As illustrated in
In the first outer surface S10, for example, the first through holes 911 are arranged in rotational symmetry around the central axis Ax. The plurality of first through holes 911 are preferably arranged on three or more virtual reference circles that are concentric and have different radiuses and are preferably arranged at equal intervals along a circumferential direction on the reference circles. The first through holes 911 are formed in a range in a radial direction where the second resistance member 20 is disposed. In the following description, unless otherwise specified, “the radial direction” and “the circumferential direction” refer to a radial direction and a circumferential direction, respectively, in a rotating coordinate system about the central axis Ax. The third through holes 912 are formed inside the first through holes 911 and are arranged in rotational symmetry about the central axis Ax. Similar to the first through holes 911, the plurality of third through holes 912 are preferably arranged on three or more virtual reference circles that are concentric and have different radiuses and are preferably arranged at equal intervals along the circumferential direction on the reference circles. As long as plating can be formed uniformly to a desired degree on the substrate Wf, however, the number and arrangement of the first through holes 911 and those of the third through holes 912 are not particularly limited. For example, a large number of third through holes 912 arranged at random may be formed in the resistor 450.
As illustrated in
In the illustrated example, the second resistance member 20 is an annular member disposed on a second outer surface side of the resistor 450. As long as the size of the overlap between the first through holes 911 and the second through holes 920 can be varied, the shape and position of the second resistance member 20 are not particularly limited. In the example of the present embodiment, the second resistance member 20 is disposed in the outer peripheral portion so that the second through holes 920 are formed in the outer peripheral portion of the resistor 450. The position of the second resistance member 20 in the resistor 450 can be appropriately changed depending on the position at which the thickness of the plating to be formed is to be adjusted. The surface of the second resistance member 20 on a side on which the first resistance member 10 is disposed is defined as a second surface S2 (see
A range of an outer peripheral portion of the first resistance member 10 in which the second resistance member 20 is disposed may be outside 50%, outside 60%, outside 70%, or outside 80% of a range from the central axis Ax to an outer peripheral end of the first resistance member 10 in the radial direction. Alternatively, the range of the outer peripheral portion of the first resistance member 10 in which the second resistance member 20 is disposed may be outside 50%, outside 60%, outside 70%, or outside 80% of a range to an outer peripheral end of the substrate Wf when the holder 440 side is viewed from the anode 430. As a result, the uniformity of the thickness of the plating formed on the substrate Wf can be further enhanced by efficiently adjusting the electric field in a region that is likely to cause a decrease in uniformity of the thickness of the plating.
The first resistance member 10 includes a first portion 11 and a second portion 12. One side of the first portion 11 in the axial direction is the first outer surface S10, and the second portion 12 and a first surface S1 are arranged on the other side. The third surface S3 is formed on a side of the second portion 12 opposite to the first portion 11. The first portion 11 and the second portion 12 are arranged side by side along the axial direction. The first portion 11 has a first outer diameter L1 in the radial direction. The second portion 12 has a second outer diameter L2 in the radial direction. The second outer diameter L2 is smaller than the first outer diameter L1. Therefore, in a side surface S13 of the first resistance member 10 on a side on which the second resistance member 20 is disposed, a surface where the second portion 12 is not disposed is the first surface S1. In other words, the side surface S13 includes the first surface S1 and the third surface S3.
The second resistance member 20 is formed to cover a part of the side surface S13 of the first resistance member 10 on a side on which the second resistance member 20 is disposed. Accordingly, the electric field around the part can be adjusted, and the thickness of the plating formed on the substrate Wf can be locally adjusted. In the side surface S13 of the first resistance member 10, the third through holes 912 are open on the third surface S3 that is not covered with the second resistance member 20. Thus, the electric field around some of the plurality of through holes in the resistor 450 can be adjusted, and the thickness of the plating formed on the substrate Wf can be adjusted depending on a position.
In the resistor 450, the first resistance member 10 and the second resistance member 20 are arranged with the first surface S1 of the first resistance member 10 facing the second surface S2 (
Here, the plating process in the plating module 400 of the present embodiment will be described in more detail. The substrate Wf is immersed in the plating solution in the cathode region 422 by using the elevating/lowering mechanism 442, so that the substrate Wf is exposed to the plating solution. In this state, the plating module 400 applies a voltage between the anode 430 and the substrate Wf and can thereby perform the plating process on the surface to be plated Wf-a of the substrate Wf. In one embodiment, the plating process is performed while rotating the holder 440 using the rotation mechanism 448. By the plating process, a conductive film (plating film) is precipitated on the surface to be plated Wf-a of the substrate Wf. In the present embodiment, by employing the resistor 450 described above, the opening area of the first through hole 911 can be adjusted and the uniformity of the thickness of the plating formed on the substrate Wf can be enhanced.
As described above, in the resistor 450 of the present embodiment, one of the first resistance member 10 and the second resistance member 20 is rotatable with respect to the other along the first surface S1 or the second surface S2. Accordingly, the plating apparatus 1000 in which the plating is more uniformly formed by easily adjusting the opening area of each first through hole 911 without need to remove the resistor 450 from the plating apparatus 1000 can be provided. As long as the opening area of the first through hole 911 can be changed, one of the first resistance member 10 and the second resistance member 20 need not be rotated with respect to the other. For example, the first resistance member 10 may be slightly lifted up from the second resistance member 20, to change the angle of the first resistance member, and then the first resistance member may be disposed again on the second resistance member 20.
The resistor 450 of the present embodiment includes the first resistance member 10 having the first surface S1 and including the plurality of first through holes 911 formed open on the first surface S1, and the second resistance member 20 having the second surface S2 and including the plurality of second through holes 920 formed open on the second surface S2, the first resistance member 10 and the second resistance member 20 are arranged with the first surface S1 and the second surface S2 facing each other, and the size of the overlap between the plurality of first through holes 911 and the plurality of second through holes 920 is variable. Accordingly, the uniformity of the thickness of the plating formed on the substrate Wf that is the target object can be enhanced by adjusting the resistor 450 including the plurality of through holes (the first through holes 911, the second through holes 920, and the third through holes 912) without need to remove the resistor 450 from the plating apparatus 1000.
The inventors have prepared a model of a plating apparatus including a resistor including a first resistance member in which a plurality of first through holes and a plurality of third through holes are formed and a second resistance member in which a plurality of second through holes are formed and have performed a simulation of forming plating on a substrate. The plurality of first through holes and the plurality of second through holes are formed in an outer peripheral portion of the resistor. The second resistance member is rotated with respect to the first resistance member, and a thickness of a plating film formed on an outer peripheral portion of the substrate is obtained by the simulation.
The following modifications are also within the scope of the present invention and can be combined with the above-described embodiment or other modifications. In the following modifications, portions and the like having the same structures and functions as those of the above-described embodiment are denoted with the same reference signs and will not be described as appropriate.
In the above-described embodiment, the resistor may include a plurality of second resistance members.
As illustrated in
The first resistance member 10A includes a first portion 11A and a second portion 12A. The first portion 11A is formed on a first outer surface side of the second portion 12A. An outer diameter of the first portion 11A is larger than an outer diameter of the second portion 12A. In the first resistance member 10A, a plurality of first through holes 911A, 911B and 911C formed to penetrate from the first outer surface S10 to the first surface S1 are formed. The first resistance member 10A further includes third through holes 912A penetrating from the first outer surface S10 to the third surface S3.
The second resistance member 20A is formed annularly around the central axis Ax and includes a plurality of second through holes 920A formed to be arranged in rotational symmetry about the central axis Ax. The second through hole 920A penetrates from the second surface S2 of the second resistance member 20A to an outer surface S22A of the second resistance member 20A. The plurality of second through holes 920A are formed at respective positions that can connect to the plurality of first through holes 911A formed on the outermost side of the first resistance member 10A when the second resistance member 20A rotates with respect to the first resistance member 10A. The second resistance member 20A is configured such that, when the second resistance member 20A rotates with respect to the first resistance member 10A, a size of overlap between the first through holes 911A and the second through holes 920A as viewed in the axial direction varies.
The second resistance member 20B is formed annularly around the central axis Ax and includes a plurality of second through holes 920B arranged in rotational symmetry about the central axis Ax. Each second through hole 920B penetrates from the second surface S2 of the second resistance member 20B to an outer surface S22B of the second resistance member 20B. The plurality of second through holes 920B are formed at respective positions that can connect to the plurality of first through holes 911B formed inside the first through holes 911A in the first resistance member 10A when the second resistance member 20B rotates with respect to the first resistance member 10A. The second resistance member 20B is configured such that, when the second resistance member 20B rotates with respect to the first resistance member 10A, a size of overlap between the first through holes 911B and the second through holes 920B as viewed in the axial direction varies.
The second resistance member 20C is formed annularly around the central axis Ax and includes a plurality of second through holes 920C arranged in rotational symmetry about the central axis Ax. Each second through hole 920C penetrates from the second surface S2 of the second resistance member 20C to an outer surface S22C of the second resistance member 20C. The plurality of second through holes 920C are formed at respective positions that can connect to the plurality of first through holes 911C formed inside the first through holes 911B in the first resistance member 10A when the second resistance member 20C rotates with respect to the first resistance member 10A. The second resistance member 20C is configured such that, when the second resistance member 20C rotates with respect to the first resistance member 10A, a size of overlap between the first through holes 911C and the second through holes 920C as viewed in the axial direction varies.
In the above-described embodiment, the opening area of the first through hole may be changed by moving one of the first resistance member and the second resistance member in parallel with the other. This modification is preferably applied to the substrate Wf that is a rectangular substrate but can also be applied to the substrate Wf that is a circular substrate or the like.
In the above-described embodiment, the plating apparatus may further include a drive mechanism that rotates one of the first resistance member and the second resistance member with respect to the other. The plating apparatus of the present modification includes the same configuration as the plating apparatus 1000 of the above-described embodiment but is different from the plating apparatus 1000 in including a plating module 400A instead of the plating module 400.
The drive mechanism 452 is a drive mechanism for rotating one of the first resistance member 10 and the second resistance member 20 with respect to the other. The drive mechanism 452 is not particularly limited in its aspect, as long as the mechanism can drive the rotation, and may include an electric drive device such as a motor. The drive mechanism 452 may be controlled by the control module 800.
Each sensor 460 is a film thickness sensor that measures the thickness of the plating formed on the substrate Wf. The sensor support 468 that supports the sensors 460 is placed in the plating tank 410. In the present modification, a plurality of sensors 460 are arranged at different distances from a rotary shaft of the rotation mechanism 448, and the thickness of the film is measured over a wide range of the substrate Wf by rotating the substrate Wf with respect to the plurality of sensors 460. However, the arrangement of the sensors 460 is not particularly limited, and the number of the sensors 460 may be one or any number of two or more. The sensor 460 may be movable or scannable. The sensor 460 has a type or the like that is not particularly limited as long as the thickness of the plating formed on the substrate Wf can be measured. It is preferable that the sensor 460 does not use a change in electrical resistance in the plating solution. Specifically, as the sensor 460, for example, an optical sensor such as a white confocal sensor, a potential sensor, a magnetic field sensor, or an eddy current sensor can be used. A detection signal from the sensor 460 is inputted to the control module 800 and processed.
In the present modification, the drive mechanism 452 can adjust the opening area of each first through hole 911 based on the uniformity of the thickness of the plating that is obtained using the sensor 460. Thus, the resistor 450 can be easily adjusted while confirming the uniformity of the thickness of the formed plating, so that a more uniform plating film can be formed. The plating module 400A need not include any sensors 460. Even in this case, the opening area of the first through hole 911 can be easily adjusted by the drive mechanism 452 and can be adjusted even during the plating process. In Modification 2, the drive mechanism 452 may move one of the first resistance member 10B and the second resistance member 20D with respect to the other.
In the above-described embodiment, each of the substrate Wf, the resistor and the anode may be disposed along the vertical direction in the plating apparatus as in PTL 2. Also in the present modification, the same operations and effects as those of the above-described embodiment can be achieved.
The present invention can be described in the following aspects.
[Aspect 1] According to Aspect 1, a resistor for a plating apparatus, for adjusting an electric field, the resistor being disposed between an anode and a holder holding a target object to be plated in the plating apparatus, is provided, and the resistor for the plating apparatus includes a first resistance member having a first surface and including a plurality of first through holes formed open on the first surface, and a second resistance member having a second surface and including a plurality of second through holes formed open on the second surface, wherein the first resistance member and the second resistance member are arranged with the first surface and the second surface facing each other, and a size of overlap between the plurality of first through holes and the plurality of second through holes is variable. According to Aspect 1, uniformity of a thickness of plating formed on the target object can be enhanced by adjusting the resistor for the plating apparatus, including a plurality of through holes, without need to remove the resistor from the plating apparatus.
[Aspect 2] According to Aspect 2, in Aspect 1, one of the first resistance member and the second resistance member is configured to be movable or rotatable with respect to the other along the first surface or the second surface. According to Aspect 2, the resistor for the plating apparatus can be adjusted more easily and more precisely.
[Aspect 3] According to Aspect 3, in Aspect 1 or 2, the second resistance member is disposed to cover a part of a side surface of the first resistance member on a side on which the second resistance member is disposed. According to Aspect 3, the electric field around the part can be adjusted, and the thickness of the plating formed on the target object can be locally adjusted.
[Aspect 4] According to Aspect 4, in Aspects 1 to 3, third through holes are formed in a third surface of the side surface of the first resistance member, the third surface being not covered with the second resistance member. According to Aspect 4, the electric field around some of the plurality of through holes in the resistor for the plating apparatus can be adjusted, and the thickness of the plating formed on the target object can be adjusted depending on a position.
[Aspect 5] According to Aspect 5, in Aspect 4, in the first resistance member, the first surface is formed on an outer peripheral side of the third surface. According to Aspect 5, the thickness of the plating formed on the outer peripheral side of the target object can be adjusted. A rate of forming the plating may depend on a distance from a center of the target object, and in such a case, the uniformity of the thickness of the formed plating can be therefore particularly enhanced.
[Aspect 6] According to Aspect 6, in Aspect 5, the first resistance member includes a first portion having a first outer diameter and a second portion having a second outer diameter smaller than the first outer diameter, the first surface is formed on the first portion, and the third surface is formed on the second portion. According to Aspect 6, alignment of the first resistance member and the second resistance member is facilitated. In addition, the opening area of each first through hole can be more precisely adjusted, and the uniformity of the thickness of the plating formed on the target object can be further enhanced.
[Aspect 7] According to aspect 7, in Aspects 1 to 6, the resistor includes a plurality of second resistance members arranged to face the first surface of the first resistance member. According to Aspect 7, an electric field in the vicinity of each second resistance member can be more precisely adjusted. Therefore, the uniformity of the thickness of the plating formed on the target object can be further enhanced.
[Aspect 8] According to Aspect 8, a plating apparatus including a plating tank, an anode disposed in the plating tank, a holder holding a target object to be plated, and the resistor for the plating apparatus according to any one of Aspects 1 to 7 is provided. According to Aspect 8, the uniformity of the thickness of the plating formed on the target object can be enhanced by adjusting the resistor for the plating apparatus, including the plurality of through holes, without need to remove the resistor from the plating apparatus.
[Aspect 9] According to Aspect 9, Aspect 8 further includes a drive mechanism that moves or rotates one of the first resistance member and the second resistance member with respect to the other. According to Aspect 10, the resistor for the plating apparatus can be more easily adjusted and can be also easily adjusted even during a plating process.
The embodiments of the present invention have been described above, and the above embodiments of the present invention are described to facilitate understanding of the present invention and are not intended to limit the present invention. Needless to say, the present invention may be changed or modified without departing from the spirit, and the present invention includes equivalents to the invention. Also, in a range in which at least some of the above-described problems can be solved or a range in which at least some of effects are exhibited, any arbitrary combination of the embodiment and the modification is possible, and arbitrary combination or omission of respective constituent components described in claims and description is possible.
| Filing Document | Filing Date | Country | Kind |
|---|---|---|---|
| PCT/JP2022/021706 | 5/27/2022 | WO |
