RF absorbing structures

Information

  • Patent Grant
  • 12185453
  • Patent Number
    12,185,453
  • Date Filed
    Wednesday, October 26, 2022
    2 years ago
  • Date Issued
    Tuesday, December 31, 2024
    a month ago
Abstract
RF absorbing structures include a dielectric layer, such as polycarbonate, and one or more layers of a carbon resistive material, such as carbon ink. The RF absorbing structures can further include one or more layers of a conductive material, such as silver ink.
Description
TECHNICAL FIELD

The invention relates to structures for radio frequency (RF) absorption with films of resistive carbon and/or conductive silver applied to dielectric substrates, methods of manufacturing these RF absorption structures, and RF apparatuses that include these RF absorption structures.


BACKGROUND

RF absorptive structures are desirable in many RF applications, including millimeter wave (mmW) applications, to improve the performance of RF apertures and RF cavities. For example, RF apertures may need to be surrounded by or lined with RF absorptive structures to improve the radiation patterns of the RF apertures and/or to prevent surface waves from propagating along structural features adjacent to the RF apertures. For an apparatus such as an RF repeater that includes an RF transmit aperture within proximity to an RF receive aperture, RF absorptive structures may be arranged between the RF transmit aperture and the RF receive aperture to increase isolation between the proximate apertures.


As another example, RF cavities may need to have enclosures that include RF absorptive structures to prevent RF energy from escaping the cavities. For a cavity that is provided by mating two or more conducting structures together, e.g., joining a ground plane to a metal plate that has been milled or molded to include a recessed cavity volume, RF absorptive structures can be included in the gasket between the mated conducting structures to prevent RF energy from escaping through the joint between the mated conducting structures.


Existing RF absorbing materials such as CUMING MICROWAVE C-RAM MT and WAVEXORB are cost-prohibitive for some applications. Further, existing RF absorbing materials may be too bulky for some applications, or not sufficiently absorptive at frequencies or polarizations of interest for certain applications.





BRIEF DESCRIPTION OF THE DRAWINGS


FIG. 1 depicts an example of a carbon/polycarbonate/carbon/pressure-sensitive-adhesive (PSA) laminate.



FIG. 2 depicts an example of a multilayer laminate using PSA between successive layers.



FIG. 3 depicts an example of a multilayer laminate using liquid adhesive between layers.



FIG. 4 depicts illustrative patterns for deposition of carbon ink.



FIG. 5 depicts illustrative patterns for deposition of carbon ink interleaved or interspersed with depositions of a conductive material.





DESCRIPTION OF VARIOUS EMBODIMENTS OF THE INVENTION

The present invention now will be described more fully hereinafter with reference to the accompanying drawings, which form a part hereof, and which show, by way of illustration, specific embodiments by which the invention may be practiced. This invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein; rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. Among other things, the present invention may be embodied as methods or devices. Accordingly, the present invention may take the form of an entirely hardware embodiment, an entirely software embodiment or an embodiment combining software and hardware aspects. The following detailed description is, therefore, not to be taken in a limiting sense.


Throughout the specification and claims, the following terms take the meanings explicitly associated herein, unless the context clearly dictates otherwise. The phrase “in one embodiment” as used herein does not necessarily refer to the same embodiment, though it may. Similarly, the phrase “in another embodiment” as used herein does not necessarily refer to a different embodiment, though it may. As used herein, the term “or” is an inclusive “or” operator, and is equivalent to the term “and/or,” unless the context clearly dictates otherwise. The term “based on” is not exclusive and allows for being based on additional factors not described, unless the context clearly dictates otherwise. In addition, throughout the specification, the meaning of “a,” “an,” and “the” include plural references. The meaning of “in” includes “in” and “on.”


In some approaches the invention provides a low-cost laminate material with RF absorbing properties. The core laminate can be, for example, a polycarbonate sheet that is coated with electrically conductive carbon ink on one or both sides. A Pressure Sensitive Adhesive (PSA) can be applied to one side of the sheet for installation or lamination purposes.


The core laminate can be used as a single layer by, for example, cutting the material to the needed shape and adhering it to the surface of the product where RF absorption is required. In other applications two or more layers can be laminated together to achieve the desired RF performance.


Some approaches provide an RF absorbing structure that includes a first dielectric layer of a dielectric material; and a first upper film of a resistive carbon material disposed on an upper surface of the first dielectric layer. In some approaches, the resistive carbon material can be patterned, e.g., as zigzags, lines, circles, line segments, or the like, with a feature size that is substantially less than a free-space wavelength corresponding to an intended frequency range for the RF absorptive properties of the structure. The first upper film may also include a conductive material such as copper, silver, or gold ink, and that conductive material can also be similarly patterned, with the pattern of the resistive carbon material being interleaved or interspersed with the pattern of the conductive material. The patterning of the resistive carbon material and/or the conductive material can be selected to increase an impedance match between the RF absorbing structure and free space for the intended frequency range, to better admit RF energy into the structure for absorption and attenuation.


The RF absorbing structure can optionally include a first lower film of the resistive carbon material disposed on a lower surface of the first dielectric layer. In some approaches, the resistive carbon material can be patterned, e.g., as zigzags, lines, circles, line segments, or the like, with a feature size that is substantially less than a free-space wavelength corresponding to an intended frequency range for the RF absorptive properties of the structure. The first lower film may also include a conductive material such as copper, silver, or gold ink, and that conductive material can also be similarly patterned, with the pattern of the resistive carbon material being interleaved or interspersed with the pattern of the conductive material. The patterning of the resistive carbon material and/or the conductive material can be selected to increase an impedance match between the RF absorbing structure and free space for the intended frequency range, to better admit RF energy into the structure for absorption and attenuation. For approaches that included patterned films on both the upper and lower surfaces of the dielectric layer, the patterns on the upper or lower surfaces can be offset or rotated relative to each other (e.g., rotated 90 degrees relative to each other) to improve the free space impedance match and/or RF absorptive properties of the structure.


In some approaches, the dielectric material is a sheet-formed material or a rollable material. The dielectric material can be a low-dielectric constant material, e.g., having a dielectric constant less than about 1.5, or less than about 2.0, or less than about 3.0 The dielectric material can be a plastic material, such as polycarbonate, polyethylene, polyester, silicone, or RF prepreg. The dielectric material can be a ceramic or composite material. The dielectric layer can have a thickness of, for example, about 5, 10, or 20 mils, depending on the desired range of operating wavelengths for the RF application.


The resistive carbon material can be a carbon ink or paint, or a carbon film material, or a carbon paper or fabric material.


In some approaches, the RF absorbing structure includes an adhesive layer disposed on a lower surface of the first dielectric layer, or on a lower surface of the first lower film of the resistive carbon material. The adhesive layer can be a pressure sensitive adhesive layer.


In some multilayer embodiments of the RF absorbing structure, the first dielectric layer is one of a plurality of dielectric layers; the first upper film is one of a plurality of upper films; the first adhesive layer is one of a plurality of adhesive layers; and the pluralities are arranged as a laminate structure with repeating layers of film, dielectric, and adhesive, in that order. In other multilayer embodiments of the RF absorbing structure, the first dielectric layer is one of a plurality of dielectric layers; the first upper film is one of a plurality of upper films; the first lower film is one of a plurality of lower films; the first adhesive layer is one of a plurality of adhesive layers; and the pluralities are arranged as a laminate structure with repeating layers of upper film, dielectric, lower film, and adhesive, in that order. The adhesive layers can include one or more pressure sensitive adhesive layers and/or one or more liquid adhesive layers.


In some approaches, an RF apparatus includes an RF absorbing structure such as the various structures described above. For example, the RF apparatus can include an RF cavity that is loaded with the RF absorbing structure to improve isolation of the RF cavity. As another example, the RF apparatus can include an antenna aperture and the RF absorbing structure can be arranged on or around the antenna aperture to improve performance characteristics of the antenna aperture such as sidelobe characteristics. As another example, the RF apparatus can include two or more antenna apertures and the RF absorbing structure can be arranged or disposed on a surface between pairs of the two or more antenna apertures to attenuate surface waves that might otherwise propagate along the surface between the pairs of the two or more antenna apertures. For example, the RF apparatus can be a RF repeater apparatus with one or more receive antennas and one or more transmit antennas, and the RF absorbing structure can be arranged or disposed to attenuate surface waves that might otherwise propagate from a transmit antenna to a receive antenna or vice versa, thus to improve front-to-back isolation of the RF repeater apparatus.


Some approaches provide a method of manufacture (e.g., of the various RF absorbing structures described above) that includes applying an upper film of a resistive carbon material and/or conductive material to an upper surface of a dielectric layer of a dielectric material. The method can further include applying a lower film of the resistive carbon material and/or conductive material to a lower surface of the dielectric layer. The dielectric material, the resistive carbon material, and the conductive material can be selected from the various materials described above.


In some approaches, the method of manufacture is a roll-to-roll process. For example, the roll-to-roll process can include unrolling a roll of the dielectric material to present the dielectric layer for the applying of the upper film; and rolling a second roll of the dielectric material with the applied upper film.


The applying of the upper film can include coating the upper surface of the dielectric layer with the resistive carbon material. For example, the coating of the upper surface can be a spray or roller coating of the upper surface. Alternatively, the coating of the upper surface can be an applying of the resistive carbon material with precut sponges. In some approaches, the coating of the upper surface can be a patterned or stenciled coating of the upper service, e.g., using a silkscreen or similar process. For approaches in which the lower surface is also coated, these same coating approaches are applicable for the lower surface.


As an alternative to the roll-to-roll process, the method of manufacture can be a printed circuit board (PCB) process, e.g., where the dielectric layer is an RF prepreg material and the resistive carbon material is applied using a PCB printing process.


In some approaches, the method of manufacture is a multilayer process. For example, one multilayer process includes cutting the dielectric layer with the applied upper film to provide a set of sheets or patches with a selected shape and then stacking the set of sheets or patches to provide a laminar RF absorbing structure, with an adhesive material (e.g., liquid adhesive or pressure-sensitive adhesive) between adjacent layers of the stack. Another multilayer process can be a multilayer roll-to-roll process, e.g., where multiple layers are unrolled and brought together in a multilayer structure.


With reference now to FIG. 1, an illustrative example of an RF absorbing structure is depicted. View 101 depicts a top view of the structure. In this non-limiting example, the structure has a rectangular shape with small diagonal cutouts at each corner of the rectangle. View 102 depicts a cross section of the structure, showing a dielectric layer 110 having an upper film 111 and a lower film 112, with an adhesive layer 113 below the lower film 112. As discussed above, the dielectric layer can be, for example, a plastic material such as polycarbonate, polyethylene, polyester, silicone, or RF prepreg. The dielectric layer can have a thickness of, for example, about 5, 10, or 20 mils, depending on the desired range of operating wavelengths for the RF application. In some approaches, the dielectric layer can have a thickness substantially less than an operating wavelength for the RF application. For example, the dielectric layer thickness can be less than about one-fifth of an operating wavelength, or less then about one-tenth of an operating wavelength. As a specific example, for an RF device that operates at 28 GHz, a dielectric layer thickness of 10 mils corresponds to about one fortieth of the 28 GHz wavelength. The upper film 111 and lower film 112 can be films of resistive carbon, or films that includes both resistive carbon and a conductive material such as copper, silver, or gold ink. As discussed above, the films can include patterns of the resistive carbon and/or the conductive material, e.g., as zigzags, lines, dots, circles, etc.


With reference now to FIG. 2, illustrative examples of multilayer laminates using PSA between successive layers are depicted. Configuration 210 depicts a two-stack configuration 211 wherein two layers 201, each having an upper film 201a, a dielectric layer 201b, and a lower film 201c, are joined together with a pressure sensitive adhesive 202. A second pressure sensitive adhesive layer is positioned at the bottom of the stack for adhesion to an RF device for a desired RF application. Configuration 220 depicts a three-stack configuration 221 wherein three layers 201, each having an upper film 201a, a dielectric layer 201b, and a lower film 201c, are joined together with a pressure sensitive adhesive 202. A third pressure sensitive layer is positioned at the bottom of the stack for adhesion to an RF device for a desired RF application. While each layer is depicted as having both upper and lower films 201a and 201b, in some applications, only one film is applied to each layer.


With reference now to FIG. 3, illustrative examples of multilayer laminates using liquid adhesive between successive layers are depicted. Configuration 310 depicts a two-stack configuration 311 wherein two layers 301, each having an upper film 301a, a dielectric layer 301b, and a lower film 301c, are joined together with a liquid adhesive 302. A pressure sensitive adhesive layer 303 is positioned at the bottom of the stack for adhesion to an RF device for a desired RF application. Configuration 320 depicts a three-stack configuration 321 wherein three layers 301, each having an upper film 301a, a dielectric layer 301b, and a lower film 301c, are joined together with a liquid adhesive 302. A pressure sensitive adhesive layer 303 is positioned at the bottom of the stack for adhesion to an RF device for a desired RF application. While each layer is depicted as having both upper and lower films 301a and 301b, in some applications, only one film is applied to each layer.


With reference now to FIG. 4, illustrative examples for patterning of the resistive carbon material are depicted. While the resistive carbon material can be deposited in a solid layer, it can alternatively be deposited as, for example, a series of horizontal zigzags 401, a series of vertical zigzags 402, a series of horizontal lines 403, a series of vertical lines 404, a series of diagonal lines 405, an array of dots 406, an array of circles 407, an array of line segments 408, a random or pseudorandom arrangement of dots 409, or a random or pseudorandom arrangement of line segments 410. Feature sizes for these patterns can be substantially less than a wavelength corresponding to an intended frequency range for the RF absorbing structure. For example, feature sizes can be less than or equal to about one-fifth or one-tenth of a free-space wavelength corresponding to the intended frequency range. The particular pattern and/or feature size can be selected to enhance an impedance match between the RF absorbing structure and free space for the intended frequency range, to better channel RF energy into the RF absorbing structure for attenuation.


With reference now to FIG. 5, illustrative examples are depicted that interleave or intersperse patterns of resistive carbon material with patterns of a conductive material such as copper, silver, or gold ink. In 501, the resistive carbon material (solid lines) and the conductive material (dashed lines) are arranged as alternating horizontal zigzags. In 502, the resistive carbon material (solid lines) and the conductive material (dashed lines) are arranged as alternating vertical zigzags. In 503, the resistive carbon material (solid lines) and the conductive material (dashed lines) are arranged as alternating horizontal lines. In 504, the resistive carbon material (solid lines) and the conductive material (dashed lines) are arranged as alternating vertical lines. In 505, the resistive carbon material (solid lines) and the conductive material (dashed lines) are arranged as alternating diagonal lines. In 506, the resistive carbon material (solid dots) and the conductive material (hollow dots) are arranged in an alternating array of dots. In 507, the resistive carbon material (solid circles) and the conductive material (dashed circles) are arranged in an alternating array of circles. In 508, the resistive carbon material (solid line segments) and the conductive material (dashed line segments) are arranged in an alternating array of line segments. In 509, the resistive carbon material (solid dots) and the conductive material (hollow dots) are arranged in a random or pseudorandom arrangement of dots. In 510, the resistive carbon material (solid line segments) and the conductive material (dashed line segments) are arranged in a random or pseudorandom arrangement of line segments. While several of these illustrative examples depict alternating arrangements of the resistive carbon material and the conductive material, other arrangements are contemplated, e.g., having multiple resistive carbon material features interspersed with an occasional conductive material feature, or vice versa.

Claims
  • 1. An RF absorbing structure, comprising: a first dielectric layer of a dielectric material;a first upper film that includes a resistive carbon material disposed on an upper surface of the first dielectric layer; anda first lower film of the resistive carbon material disposed on a lower surface of the first dielectric layer.
  • 2. The structure of claim 1, wherein the first upper film further includes a conductive material.
  • 3. The structure of claim 1, wherein the first upper film is arranged in a first pattern.
  • 4. The structure of claim 3, wherein the RF absorbing structure has a selected frequency range for RF absorption, and the first pattern is a periodic pattern having a feature size substantially less than a free-space wavelength corresponding to the selected frequency range.
  • 5. The structure of claim 3, wherein the RF absorbing structure has a selected frequency range for RF absorption, and the first pattern is a random or pseudorandom pattern having a feature size substantially less than a free-space wavelength corresponding to the selected frequency range.
  • 6. The structure of claim 1, wherein the first lower film is arranged in a second pattern.
  • 7. The structure of claim 6, wherein the RF absorbing structure has a selected frequency range for RF absorption, and the second pattern is a periodic pattern having a feature size substantially less than a free-space wavelength corresponding to the selected frequency range.
  • 8. The structure of claim 6, wherein the RF absorbing structure has a selected frequency range for RF absorption, and the second pattern is a random or pseudorandom pattern having a feature size substantially less than a free-space wavelength corresponding to the selected frequency range.
  • 9. The structure of claim 1, further comprising: a first adhesive layer disposed on a lower surface of the first lower film.
  • 10. The structure of claim 9, wherein: the first dielectric layer is one of a plurality of dielectric layers;the first upper film is one of a plurality of upper films;the first lower film is one of a plurality of lower films;the first adhesive layer is one of a plurality of adhesive layers; andthe pluralities are arranged as a laminate structure with repeating layers of upper film, dielectric, lower film, and adhesive, in that order.
  • 11. An RF absorbing structure, comprising: a first dielectric layer of a dielectric material;a first upper film that includes a resistive carbon material disposed on an upper surface of the first dielectric layer; anda first adhesive layer disposed on a lower surface of the first dielectric layer.
  • 12. The structure of claim 11, wherein: the first dielectric layer is one of a plurality of dielectric layers;the first upper film is one of a plurality of upper films;the first adhesive layer is one of a plurality of adhesive layers; andthe pluralities are arranged as a laminate structure with repeating layers of film, dielectric, and adhesive, in that order.
  • 13. An apparatus, comprising: a first RF antenna aperture;a second RF antenna aperture; andan RF absorbing structure disposed on a surface between the first RF antenna aperture and the second RF antenna aperture, wherein the RF absorbing structure comprises a first dielectric layer of a dielectric material and a first upper film that includes a resistive carbon material disposed on an upper surface of the first dielectric layer.
  • 14. The apparatus of claim 13, wherein the RF absorbing structure is arranged to at least partially improve sidelobe characteristics of the first RF antenna aperture or the second RF antenna aperture.
  • 15. The apparatus of claim 13, wherein the RF absorbing structure is arranged to at least partially improve RF isolation between the first RF antenna aperture and the second RF antenna aperture.
  • 16. A method, comprising: applying an upper film of a resistive carbon material to an upper surface of a dielectric layer of a dielectric material; andcutting the dielectric layer with the applied upper film to provide a set of sheets or patches with a selected shape.
  • 17. The method of claim 16, wherein the first upper film includes a conductive material.
  • 18. The method of claim 16, further comprising: applying a lower film of the resistive carbon material to a lower surface of the dielectric layer.
  • 19. The method of claim 18, further comprising: applying an adhesive layer to a lower surface of the lower film.
  • 20. The method of claim 16, wherein the dielectric material is a plastic material.
  • 21. The method of claim 20, wherein the method is a roll-to-roll process.
  • 22. The method of claim 21, wherein the roll-to-roll process includes: unrolling a roll of the dielectric material to present the dielectric layer for the applying of the upper film; androlling a second roll of the dielectric material with the applied upper film.
  • 23. The method of claim 22, wherein the applying of the upper film includes: coating the upper surface of the dielectric layer with the resistive carbon material.
  • 24. The method of claim 16, further comprising: applying an adhesive layer to a lower surface of the dielectric layer.
  • 25. The method of claim 16, further comprising: stacking the set of sheets or patches to provide a laminar RF absorbing structure.
CROSS-REFERENCE TO RELATED APPLICATION

This application is a Utility patent application based on previously filed U.S. Provisional Patent Application No. 63/272,007, filed on Oct. 26, 2021, entitled “RF ABSORBING STRUCTURES” and naming Jay Howard McCandless et al. as inventors, the benefit of the filing date of which is hereby claimed under 35 U.S.C. § 119(e) and the contents of which is further incorporated in entirety by reference.

US Referenced Citations (251)
Number Name Date Kind
2131108 Lindenblad Sep 1938 A
4464663 Lalezari et al. Aug 1984 A
6133880 Grangeat et al. Oct 2000 A
6150987 Sole et al. Nov 2000 A
6529745 Fukagawa et al. Mar 2003 B1
6680923 Leon Jan 2004 B1
7084815 Phillips et al. Aug 2006 B2
7205949 Turner Apr 2007 B2
8521080 Sakoda et al. Aug 2013 B2
8711989 Lee et al. Apr 2014 B1
9356356 Chang et al. May 2016 B2
9385435 Bily et al. Jul 2016 B2
9450310 Bily et al. Sep 2016 B2
9551785 Geer Jan 2017 B1
9608314 Kwon et al. Mar 2017 B1
9635456 Fenichel Apr 2017 B2
9711852 Chen et al. Jul 2017 B2
9806414 Chen et al. Oct 2017 B2
9806415 Chen et al. Oct 2017 B2
9806416 Chen et al. Oct 2017 B2
9812779 Chen et al. Nov 2017 B2
9813141 Marupaduga et al. Nov 2017 B1
9936365 Elam Apr 2018 B1
9955301 Markhovsky et al. Apr 2018 B2
10014948 Ashrafi Jul 2018 B2
10020891 Ashrafi Jul 2018 B2
10033109 Gummalla et al. Jul 2018 B1
10153845 Ashrafi Dec 2018 B2
10187156 Ashrafi Jan 2019 B2
10225760 Black Mar 2019 B1
10277338 Reial et al. Apr 2019 B2
10313894 Desclos et al. Jun 2019 B1
10324158 Wang et al. Jun 2019 B2
10326203 Black et al. Jun 2019 B1
10333217 Black et al. Jun 2019 B1
10374710 Ashrafi Aug 2019 B2
10425905 Black et al. Sep 2019 B1
10431899 Bily et al. Oct 2019 B2
10468767 McCandless et al. Nov 2019 B1
10491303 Ashrafi Nov 2019 B2
10505620 Ito et al. Dec 2019 B2
10522897 Katko et al. Dec 2019 B1
10524154 Black Dec 2019 B2
10524216 Black et al. Dec 2019 B1
10547386 Ashrafi Jan 2020 B2
10594033 Black et al. Mar 2020 B1
10673646 Shinar et al. Jun 2020 B1
10734736 McCandless et al. Aug 2020 B1
10862545 Deutsch et al. Dec 2020 B2
10863458 Black et al. Dec 2020 B2
10971813 McCandless et al. Apr 2021 B2
10998642 McCandless et al. May 2021 B1
11026055 Rea Jun 2021 B1
11069975 Mason et al. Jul 2021 B1
11088433 Katko et al. Aug 2021 B2
11190266 Black et al. Nov 2021 B1
11252731 Levitsky et al. Feb 2022 B1
11279480 Rezvani Mar 2022 B1
11297606 Machado et al. Apr 2022 B2
11374624 Deutsch et al. Jun 2022 B2
11424815 Black et al. Aug 2022 B2
11431382 Deutsch et al. Aug 2022 B2
11451287 Sivaprakasam et al. Sep 2022 B1
11463969 Li et al. Oct 2022 B2
11497050 Black et al. Nov 2022 B2
11563279 McCandless et al. Jan 2023 B2
11670849 Mason et al. Jun 2023 B2
11706722 Black et al. Jul 2023 B2
11757180 McCandless et al. Sep 2023 B2
11843955 Cavcic et al. Dec 2023 B2
11844050 Machado et al. Dec 2023 B2
11848478 Katko et al. Dec 2023 B2
11929822 Black Mar 2024 B2
11937199 Katko et al. Mar 2024 B2
11968593 Rea Apr 2024 B2
11973568 Black et al. Apr 2024 B2
12010703 Black et al. Jun 2024 B2
20010005406 Mege et al. Jun 2001 A1
20020196185 Bloy Dec 2002 A1
20030025638 Apostolos Feb 2003 A1
20030062963 Aikawa et al. Apr 2003 A1
20030151103 Endo Aug 2003 A1
20040003250 Kindberg et al. Jan 2004 A1
20040038714 Rhodes et al. Feb 2004 A1
20040229651 Hulkkonen et al. Nov 2004 A1
20050237265 Durham et al. Oct 2005 A1
20050282536 McClure et al. Dec 2005 A1
20060025072 Pan Feb 2006 A1
20070024514 Phillips et al. Feb 2007 A1
20070147338 Chandra et al. Jun 2007 A1
20070184828 Majidi-Ahy Aug 2007 A1
20070202931 Lee et al. Aug 2007 A1
20080039012 McKay et al. Feb 2008 A1
20080049649 Kozisek et al. Feb 2008 A1
20080181328 Harel et al. Jul 2008 A1
20090153407 Zhang et al. Jun 2009 A1
20090176487 DeMarco Jul 2009 A1
20090207091 Anagnostou et al. Aug 2009 A1
20090231215 Taura Sep 2009 A1
20090296938 Devanand et al. Dec 2009 A1
20100197222 Scheucher Aug 2010 A1
20100207823 Sakata et al. Aug 2010 A1
20100248659 Kawabata Sep 2010 A1
20100302112 Lindenmeier et al. Dec 2010 A1
20110070824 Braithwaite Mar 2011 A1
20110199279 Shen et al. Aug 2011 A1
20110292843 Gan et al. Dec 2011 A1
20120064841 Husted et al. Mar 2012 A1
20120094630 Wisnewski et al. Apr 2012 A1
20120099856 Britz et al. Apr 2012 A1
20120194399 Bily et al. Aug 2012 A1
20130059620 Cho Mar 2013 A1
20130069834 Duerksen Mar 2013 A1
20130141190 Kitaoka et al. Jun 2013 A1
20130171986 Shimizu Jul 2013 A1
20130231066 Zander et al. Sep 2013 A1
20130303145 Harrang et al. Nov 2013 A1
20130324076 Harrang Dec 2013 A1
20140073337 Hong et al. Mar 2014 A1
20140094217 Stafford Apr 2014 A1
20140171811 Lin et al. Jun 2014 A1
20140198684 Gravely et al. Jul 2014 A1
20140266946 Bily et al. Sep 2014 A1
20140269417 Yu et al. Sep 2014 A1
20140293904 Dai et al. Oct 2014 A1
20140308962 Zhang et al. Oct 2014 A1
20140349696 Hyde et al. Nov 2014 A1
20150109178 Hyde et al. Apr 2015 A1
20150109181 Hyde et al. Apr 2015 A1
20150116153 Chen et al. Apr 2015 A1
20150131618 Chen May 2015 A1
20150162658 Bowers et al. Jun 2015 A1
20150222021 Stevenson et al. Aug 2015 A1
20150229028 Bily et al. Aug 2015 A1
20150236777 Akhtar et al. Aug 2015 A1
20150276926 Bowers et al. Oct 2015 A1
20150276928 Bowers et al. Oct 2015 A1
20150288063 Johnson et al. Oct 2015 A1
20150318618 Chen et al. Nov 2015 A1
20150372389 Chen et al. Dec 2015 A1
20160037508 Sun Feb 2016 A1
20160079672 Cerreno Mar 2016 A1
20160087334 Sayama et al. Mar 2016 A1
20160088648 Xue et al. Mar 2016 A1
20160149308 Chen et al. May 2016 A1
20160149309 Chen et al. May 2016 A1
20160149310 Chen et al. May 2016 A1
20160164175 Chen et al. Jun 2016 A1
20160174241 Ansari et al. Jun 2016 A1
20160198334 Bakshi et al. Jul 2016 A1
20160219539 Kim et al. Jul 2016 A1
20160241367 Irmer et al. Aug 2016 A1
20160269964 Murray Sep 2016 A1
20160302208 Sturkovich et al. Oct 2016 A1
20160345221 Axmon et al. Nov 2016 A1
20160365754 Zeine et al. Dec 2016 A1
20160373181 Black et al. Dec 2016 A1
20170033858 Calcev et al. Feb 2017 A1
20170085357 Shahar Mar 2017 A1
20170118750 Kikuma et al. Apr 2017 A1
20170127295 Black et al. May 2017 A1
20170127296 Gustafsson et al. May 2017 A1
20170127332 Axmon et al. May 2017 A1
20170142652 Liu et al. May 2017 A1
20170155192 Black et al. Jun 2017 A1
20170155193 Black et al. Jun 2017 A1
20170187123 Black et al. Jun 2017 A1
20170187426 Su et al. Jun 2017 A1
20170194704 Chawgo et al. Jul 2017 A1
20170195054 Ashrafi Jul 2017 A1
20170238141 Lindoff et al. Aug 2017 A1
20170310017 Howard Oct 2017 A1
20170339575 Kim et al. Nov 2017 A1
20170367053 Noh et al. Dec 2017 A1
20170373403 Watson Dec 2017 A1
20180013193 Olsen et al. Jan 2018 A1
20180019798 Khan et al. Jan 2018 A1
20180026683 Manholm et al. Jan 2018 A1
20180027555 Kim et al. Jan 2018 A1
20180066991 Mueller et al. Mar 2018 A1
20180076521 Mehdipour et al. Mar 2018 A1
20180097286 Black et al. Apr 2018 A1
20180123692 Leiba May 2018 A1
20180177461 Bell et al. Jun 2018 A1
20180219283 Wilkins et al. Aug 2018 A1
20180227035 Cheng et al. Aug 2018 A1
20180227445 Minegishi Aug 2018 A1
20180233821 Pham et al. Aug 2018 A1
20180270729 Ramachandra et al. Sep 2018 A1
20180301821 Black et al. Oct 2018 A1
20180337445 Sullivan et al. Nov 2018 A1
20180368389 Adams Dec 2018 A1
20190020107 Polehn et al. Jan 2019 A1
20190052428 Chu et al. Feb 2019 A1
20190053013 Markhovsky et al. Feb 2019 A1
20190067813 Igura Feb 2019 A1
20190115972 Braun et al. Apr 2019 A1
20190219982 Klassen et al. Jul 2019 A1
20190221931 Black et al. Jul 2019 A1
20190289482 Black Sep 2019 A1
20190289560 Black et al. Sep 2019 A1
20190336107 Hope Simpson et al. Nov 2019 A1
20190372671 Ashrafi Dec 2019 A1
20200008163 Black et al. Jan 2020 A1
20200036413 Deutsch et al. Jan 2020 A1
20200083605 Quarfoth et al. Mar 2020 A1
20200083960 Ashrafi Mar 2020 A1
20200091607 Black et al. Mar 2020 A1
20200137698 Black et al. Apr 2020 A1
20200186227 Reider et al. Jun 2020 A1
20200205012 Bengtsson et al. Jun 2020 A1
20200251802 Katko et al. Aug 2020 A1
20200259552 Ashworth Aug 2020 A1
20200266533 McCandless et al. Aug 2020 A1
20200313741 Zhu et al. Oct 2020 A1
20200366363 Li et al. Nov 2020 A1
20200403689 Rofougaran et al. Dec 2020 A1
20210036437 Zhang et al. Feb 2021 A1
20210067237 Sampath et al. Mar 2021 A1
20210159945 Deutsch et al. May 2021 A1
20210167819 Deutsch et al. Jun 2021 A1
20210176719 Black et al. Jun 2021 A1
20210185623 Black et al. Jun 2021 A1
20210234591 Eleftheriadis et al. Jul 2021 A1
20210313677 McCandless et al. Oct 2021 A1
20210328366 McCandless et al. Oct 2021 A1
20210328664 Schwab et al. Oct 2021 A1
20210367684 Bendinelli et al. Nov 2021 A1
20210368355 Liu et al. Nov 2021 A1
20210376912 Black et al. Dec 2021 A1
20220014933 Moon et al. Jan 2022 A1
20220038858 Rea Feb 2022 A1
20220053433 Abedini et al. Feb 2022 A1
20220078762 Machado et al. Mar 2022 A1
20220085498 Mason et al. Mar 2022 A1
20220085869 Black et al. Mar 2022 A1
20220102828 Katko et al. Mar 2022 A1
20220232396 Cavcic et al. Jul 2022 A1
20220240305 Black et al. Jul 2022 A1
20220302992 Sivaprakasam et al. Sep 2022 A1
20220369295 Machado et al. Nov 2022 A1
20230011531 Black Jan 2023 A1
20230155666 Black et al. May 2023 A1
20230164796 Black et al. May 2023 A1
20230337162 Katko et al. Oct 2023 A1
20240031953 Black et al. Jan 2024 A1
20240039152 Mason et al. Feb 2024 A1
20240222858 McCandless et al. Jul 2024 A1
20240251256 Cavcic et al. Jul 2024 A1
20240259831 Cavcic et al. Aug 2024 A1
20240260006 Machado et al. Aug 2024 A1
Foreign Referenced Citations (124)
Number Date Country
2019239864 Sep 2020 AU
2020226298 Feb 2023 AU
3092509 Sep 2019 CA
102948089 Feb 2013 CN
103700951 Apr 2014 CN
106572622 Apr 2017 CN
106664124 May 2017 CN
106797074 May 2017 CN
109478900 Mar 2019 CN
110034416 Jul 2019 CN
110521277 Nov 2019 CN
111903063 Nov 2020 CN
3440778 Oct 2017 EP
3273629 Jan 2018 EP
3603329 Sep 2018 EP
3769429 Sep 2019 EP
3831115 Feb 2020 EP
3928380 Aug 2020 EP
3806345 Apr 2021 EP
4085494 Jul 2021 EP
4136759 Oct 2021 EP
4158796 Dec 2021 EP
4278645 Jul 2022 EP
4285628 Aug 2022 EP
3928380 Mar 2024 EP
S61-1102 Jan 1986 JP
H09-36656 Feb 1997 JP
H09-214418 Aug 1997 JP
2000-111630 Apr 2000 JP
3307146 Jul 2002 JP
2003-110322 Apr 2003 JP
2004-270143 Sep 2004 JP
3600459 Dec 2004 JP
2007-81648 Mar 2007 JP
2007-306273 Nov 2007 JP
2008-153798 Jul 2008 JP
2009-514329 Apr 2009 JP
2010-226457 Oct 2010 JP
2011-507367 Mar 2011 JP
2011-508994 Mar 2011 JP
2012-175189 Sep 2012 JP
2013-539949 Oct 2013 JP
2014-075788 Apr 2014 JP
2014-207626 Oct 2014 JP
2014-531826 Nov 2014 JP
2016-500214 Jan 2016 JP
2016-139965 Aug 2016 JP
2017-220825 Dec 2017 JP
2018-14713 Jan 2018 JP
2018-173921 Nov 2018 JP
2019-518355 Jun 2019 JP
2019-519956 Jul 2019 JP
2020-515162 May 2020 JP
2020-523863 Aug 2020 JP
2020-145614 Sep 2020 JP
2021-517406 Jul 2021 JP
2021-532683 Nov 2021 JP
2022-521286 Apr 2022 JP
2023-519067 May 2023 JP
2023-522640 May 2023 JP
2023-527384 Jun 2023 JP
7378414 Nov 2023 JP
2024-504621 Feb 2024 JP
2024-505881 Feb 2024 JP
7451491 Mar 2024 JP
7520861 Jul 2024 JP
10-2004-0006000 Jan 2004 KR
10-2005-0083901 Aug 2005 KR
10-2006-0031895 Apr 2006 KR
10-2006-0048953 May 2006 KR
10-2008-0093257 Oct 2008 KR
10-2012-0072144 Jul 2012 KR
10-2013-0080008 Jul 2013 KR
10-2016-0072062 Jun 2016 KR
10 2016 0113100 Sep 2016 KR
10-2019-0010545 Jan 2019 KR
10-2019-0133194 Dec 2019 KR
10-2020-0123254 Oct 2020 KR
10-2021-0048499 May 2021 KR
10-2021-0125579 Oct 2021 KR
10-2022-0129570 Sep 2022 KR
10-2023-0009895 Jan 2023 KR
10-2023-0017280 Feb 2023 KR
10-2023-0150811 Oct 2023 KR
10-2640129 Feb 2024 KR
202037208 Oct 2020 TW
2007001134 Jan 2007 WO
2009075282 Jun 2009 WO
2010104435 Sep 2010 WO
2012050614 Apr 2012 WO
2012096611 Jul 2012 WO
2012161612 Nov 2012 WO
2013023171 Feb 2013 WO
2015196044 Dec 2015 WO
2016044069 Mar 2016 WO
2017008851 Jan 2017 WO
2017014842 Jan 2017 WO
2017176746 Oct 2017 WO
2017193056 Nov 2017 WO
2018144940 Aug 2018 WO
2018175615 Sep 2018 WO
2018179870 Oct 2018 WO
2019139745 Jul 2019 WO
2019183072 Sep 2019 WO
2019183107 Sep 2019 WO
2020027990 Feb 2020 WO
2020060705 Mar 2020 WO
2020076350 Apr 2020 WO
2020095597 May 2020 WO
2020163052 Aug 2020 WO
2020171947 Aug 2020 WO
2021003112 Jan 2021 WO
2021137898 Jul 2021 WO
2021211354 Oct 2021 WO
2021242996 Dec 2021 WO
2022031477 Feb 2022 WO
2022056024 Mar 2022 WO
2022155529 Jul 2022 WO
2022164930 Aug 2022 WO
2023283352 Jan 2023 WO
2023076405 May 2023 WO
2023205182 Oct 2023 WO
2024072997 Apr 2024 WO
2024108180 May 2024 WO
Non-Patent Literature Citations (204)
Entry
Office Communication for U.S. Appl. No. 15/925,612 mailed Jun. 15, 2018, pp. 1-9.
U.S. Appl. No. 14/510,947, filed Oct. 9, 2014, pp. 1-76.
Office Communication for U.S. Appl. No. 16/049,630 mailed Oct. 4, 2018, pp. 1-13.
Office Communication for U.S. Appl. No. 15/870,758 mailed Oct. 1, 2018, pp. 1-12.
Office Communication for U.S. Appl. No. 16/136,119 mailed Nov. 23, 2018, pp. 1-12.
Office Communication for U.S. Appl. No. 16/136,119 mailed Mar. 15, 2019, pp. 1-8.
Office Communication for U.S. Appl. No. 16/292,022 mailed Jun. 7, 2019, pp. 1-13.
Office Communication for U.S. Appl. No. 16/049,630 mailed Apr. 12, 2019, pp. 1-13.
Office Communication for U.S. Appl. No. 16/268,469 mailed May 16, 2019, pp. 1-16.
Office Communication for U.S. Appl. No. 16/280,939 mailed May 13, 2019, pp. 1-22.
Office Communication for U.S. Appl. No. 16/440,815 mailed Jul. 17, 2019, pp. 1-16.
Office Communication for U.S. Appl. No. 16/358,112 mailed May 15, 2019, pp. 1-17.
International Search Report and Written Opinion for International Patent Application No. PCT/US2019/022942 mailed Jul. 4, 2019, pp. 1-12.
Yurduseven, Okan et al., “Dual-Polarization Printed Holographic Multibeam Metasurface Antenna” Aug. 7, 2017, IEEE Antennas and Wireless Propagation Letters. pp. 10.1109/LAWP.2017, pp. 1-4.
International Search Report and Written Opinion for International Patent Application No. PCT/US2019/022987 mailed Jul. 2, 2019, pp. 1-13.
Office Communication for U.S. Appl. No. 16/049,630 mailed Jun. 24, 2019, pp. 1-5.
Office Communication for U.S. Appl. No. 16/280,939 mailed Jul. 18, 2019, pp. 1-7.
Office Communication for U.S. Appl. No. 16/049,630 mailed Aug. 7, 2019, pp. 1-13.
Office Communication for U.S. Appl. No. 16/292,022 mailed Sep. 23, 2019, pp. 1-9.
Office Communication for U.S. Appl. No. 16/440,815 mailed on Oct. 7, 2019, pp. 1-5.
Office Communication for U.S. Appl. No. 16/268,469 mailed Sep. 10, 2019, pp. 1-11.
International Search Report and Written Opinion for International Patent Application No. PCT/US2019/041053 mailed Aug. 27, 2019, pp. 1-8.
Office Communication for U.S. Appl. No. 16/568,096 mailed Oct. 24, 2019, pp. 1-10.
International Search Report and Written Opinion for International Patent Application No. PCT/US2019/047093 mailed Oct. 21, 2019, pp. 1-7.
Office Communication for U.S. Appl. No. 16/049,630 mailed Dec. 9, 2019, pp. 1-13.
Office Communication for U.S. Appl. No. 16/440,815 mailed Jan. 8, 2020, pp. 1-8.
Office Communication for U.S. Appl. No. 16/730,932 mailed Mar. 6, 2020, pp. 1-13.
Office Communication for U.S. Appl. No. 16/049,630 mailed Mar. 31, 2020, pp. 1-15.
Office Communication for U.S. Appl. No. 16/734,195 mailed Mar. 20, 2020, pp. 1-8.
Office Communication for U.S. Appl. No. 16/846,670 mailed Jun. 11, 2020, pp. 1-12.
Office Communication for U.S. Appl. No. 16/673,852 mailed Jun. 24, 2020, pp. 1-11.
International Search Report and Written Opinion for International Patent Application No. PCT/US2020/016641 mailed Apr. 14, 2020, pp. 1-7.
Gao, S.S. et al., “Holographic Artificial Impedance Surface Antenna Based on Circular Patch”, 2018 International Conference on Microwave and Millimeter Wave Technology (ICMMT), 2018, pp. 1-3.
Nishiyama, Eisuke et al., “Polarization Controllable Microstrip Antenna using Beam Lead PIN Diodes”, 2006 Asia-Pacific Microwave Conference, 2006, pp. 1-4.
International Search Report and Written Opinion for International Patent Application No. PCT/US2020/013713 mailed Apr. 21, 2020, pp. 1-8.
Office Communication for U.S. Appl. No. 16/049,630 mailed Aug. 19, 2020, pp. 1-18.
Office Communication for U.S. Appl. No. 16/730,932 mailed Aug. 25, 2020, pp. 1-5.
Office Communication for U.S. Appl. No. 16/983,927 mailed Aug. 31, 2020, pp. 1-7.
Office Communication for U.S. Appl. No. 16/983,978 mailed Sep. 16, 2020, pp. 1-7.
Office Communication for U.S. Appl. No. 16/049,630 mailed Oct. 15, 2020, pp. 1-16.
Office Communication for U.S. Appl. No. 16/983,978 mailed Oct. 27, 2020, pp. 1-13.
International Search Report and Written Opinion for International Patent Application No. PCT/US2020/048806 mailed Nov. 17, 2020, pp. 1-9.
Office Communication for U.S. Appl. No. 16/673,852 mailed Nov. 25, 2020, pp. 1-8.
Office Communication for U.S. Appl. No. 16/846,670 mailed Nov. 25, 2020, pp. 1-13.
Office Communication for U.S. Appl. No. 16/983,927 mailed Jan. 6, 2021, pp. 1-8.
Office Communication for U.S. Appl. No. 16/846,670 mailed Feb. 8, 2021, pp. 1-4.
Office Communication for U.S. Appl. No. 16/983,978 mailed Feb. 10, 2021, pp. 1-11.
Office Communication for U.S. Appl. No. 16/846,670 mailed Apr. 2, 2021, pp. 1-9.
Office Communication for U.S. Appl. No. 16/730,690 mailed Apr. 8, 2021, pp. 1-11.
Office Communication for U.S. Appl. No. 17/177,131 mailed Apr. 9, 2021, pp. 1-17.
Vu, Trung Kien et al., “Joint Load Balancing and Interference Mitigation in 5G Heterogeneous Networks,” IEEE Transactions on Wireless Communications, 2017, vol. 16, No. 9, pp. 6032-6046.
Office Communication for U.S. Appl. No. 17/177,145 mailed Apr. 19, 2021, pp. 1-11.
Office Communication for U.S. Appl. No. 17/112,940 mailed Jul. 21, 2021, pp. 1-22.
International Search Report and Written Opinion for International Patent Application No. PCT/US2021/026400 mailed Jul. 20, 2021, pp. 1-7.
Office Communication for U.S. Appl. No. 17/177,145 mailed Aug. 3, 2021, pp. 1-16.
Office Communication for U.S. Appl. No. 17/177,131 mailed Aug. 6, 2021, pp. 1-16.
Office Communication for U.S. Appl. No. 17/112,940 mailed Aug. 9, 2021, pp. 1-20.
International Search Report and Written Opinion for International Patent Application No. PCT/US2021/034479 mailed Aug. 10, 2021, pp. 1-7.
Office Communication for U.S. Appl. No. 17/332,136 mailed Sep. 2, 2021, pp. 1-9.
Office Communication for Chinese Patent Application No. 201980019925.1 mailed Sep. 27, 2021, pp. 1-25.
Office Communication for U.S. Appl. No. 17/177,145 mailed Oct. 14, 2021, pp. 1-5.
International Search Report and Written Opinion for International Patent Application No. PCT/US2021/043308 mailed Nov. 2, 2021, pp. 1-8.
Office Communication for U.S. Appl. No. 17/177,131 mailed Nov. 12, 2021, pp. 1-5.
Extended European Search Report for European Patent Application No. 19772471.9 mailed Nov. 8, 2021, pp. 1-8.
Office Communication for U.S. Appl. No. 17/177,145 mailed Nov. 16, 2021, pp. 1-16.
Office Communication for U.S. Appl. No. 17/177,131 mailed Dec. 17, 2021, pp. 1-14.
Black, Eric J., “Holographic Beam Forming and MIMO,” Pivotal Commware, 2017, pp. 1-8.
Björn, Ekman, “Machine Learning for Beam Based Mobility Optimization in NR,” Master of Science Thesis in Communication Systems, Department of Electrical Engineering, Linköping University, 2017, pp. 1-85.
Office Communication for U.S. Appl. No. 17/112,940 mailed Dec. 22, 2021, pp. 1-15.
International Search Report and Written Opinion for International Patent Application No. PCT/US2021/049502 mailed Dec. 14, 2021, pp. 1-8.
Office Communication for U.S. Appl. No. 17/469,694 mailed Jan. 20, 2022, pp. 1-9.
Office Communication for U.S. Appl. No. 17/537,233 mailed Feb. 4, 2022, pp. 1-9.
Office Communication for U.S. Appl. No. 17/112,940 mailed Mar. 17, 2022, pp. 1-16.
Office Communication for U.S. Appl. No. 17/576,832 mailed Mar. 18, 2022, pp. 1-15.
Office Communication for U.S. Appl. No. 17/177,145 mailed Mar. 24, 2022, pp. 1-18.
Office Communication for U.S. Appl. No. 17/306,361 mailed Mar. 28, 2022, pp. 1-7.
Extended European Search Report for European Patent Application No. 19844867.2 mailed Mar. 30, 2022, pp. 1-16.
Office Communication for U.S. Appl. No. 17/576,832 mailed Apr. 1, 2022, pp. 1-14.
Office Communication for U.S. Appl. No. 17/585,418 mailed Apr. 8, 2022, pp. 1-9.
Office Communication for U.S. Appl. No. 17/537,233 mailed Apr. 20, 2022, pp. 1-9.
Office Communication for U.S. Appl. No. 17/203,255 mailed Apr. 26, 2022, pp. 1-17.
Office Communication for U.S. Appl. No. 17/177,131 mailed Apr. 27, 2022, pp. 1-14.
International Search Report and Written Opinion for International Patent Application No. PCT/US2022/012613 mailed May 10, 2022, pp. 1-8.
International Search Report and Written Opinion for International Patent Application No. PCT/US2022/013942 mailed May 10, 2022, pp. 1-8.
Qualcomm Incorporated, “Common understanding of repeaters,” 3GPP TSG RAN WG4 #98_e R4-2102829, 2021, https://www.3gpp.org/ftp/tsg_ran/WG4_Radio/TSGR4_98_e/Docs/R4-2102829.zip, Accessed: May 25, 2022, pp. 1-2.
MediaTek Inc., “General views on NR repeater,” 3GPP TSG RAN WG4 #98_e R4-2101156, 2021, https://www.3gpp.org/ftp/tsg_ran/WG4_Radio/TSGR4_98_e/Docs/R4-2101156.zip, Accessed: May 25, 2022, pp. 1-4.
Office Communication for U.S. Appl. No. 17/177,145 mailed Jun. 3, 2022, pp. 1-5.
Office Communication for U.S. Appl. No. 17/576,832 mailed Jul. 13, 2022, pp. 1-15.
Office Communication for U.S. Appl. No. 17/585,418 mailed Jul. 22, 2022, pp. 1-6.
Office Communication for U.S. Appl. No. 17/585,418 mailed Aug. 4, 2022, pp. 1-2.
Office Communication for U.S. Appl. No. 17/306,361 mailed Sep. 9, 2022, pp. 1-7.
Office Communication for U.S. Appl. No. 17/576,832 mailed Sep. 23, 2022, pp. 1-5.
Office Communication for U.S. Appl. No. 17/306,361 mailed Sep. 27, 2022, pp. 1-7.
Office Communication for U.S. Appl. No. 17/379,813 mailed Oct. 5, 2022, pp. 1-11.
Office Communication for U.S. Appl. No. 17/217,882 mailed Oct. 13, 2022, pp. 1-14.
Office Communication for U.S. Appl. No. 17/397,442 mailed Oct. 27, 2022, pp. 1-8.
Office Communication for U.S. Appl. No. 17/859,632 mailed Oct. 27, 2022, pp. 1-12.
International Search Report and Written Opinion for International Patent Application No. PCT/US2022/036381 mailed Oct. 25, 2022, pp. 1-8.
Extended European Search Report for European Patent Application No. 20759272.6 mailed Nov. 3, 2022, pp. 1-9.
Office Communication for U.S. Appl. No. 17/980,391 mailed Jul. 3, 2023, pp. 1-9.
Office Communication for Japanese Patent Application No. JP 2020-548724 mailed Jun. 15, 2023, pp. 1-5.
International Search Report and Written Opinion for International Patent Application No. PCT/US2023/018993 mailed Jun. 27, 2023, pp. 1-9.
Office Communication for U.S. Appl. No. 17/576,832 mailed Jul. 13, 2023, pp. 1-4.
Office Communication for U.S. Appl. No. 18/136,238 mailed Jul. 20, 2023, pp. 1-8.
Examination Report for European Patent Application No. 19772471.9 mailed Jul. 28, 2023, pp. 1-4.
Office Communication for Korean Patent Application No. KR 10-2020-7029161 mailed Jul. 19, 2023, pp. 1-15.
Office Communication for U.S. Appl. No. 17/708,757 mailed Aug. 4, 2023, pp. 1-8.
Office Communication for U.S. Appl. No. 17/859,632 mailed Aug. 8, 2023, pp. 1-14.
Office Communication for U.S. Appl. No. 17/334,105 mailed Aug. 11, 2023, pp. 1-16.
Office Communication for U.S. Appl. No. 17/576,832 mailed Aug. 16, 2023, pp. 1-7.
Office Communication for U.S. Appl. No. 17/576,832 mailed Aug. 24, 2023, pp. 1-4.
Office Communication for U.S. Appl. No. 17/576,832 mailed Apr. 28, 2023, pp. 1-15.
Office Communication for U.S. Appl. No. 17/217,882 mailed May 15, 2023, pp. 1-6.
Office Communication for U.S. Appl. No. 17/859,632 mailed May 16, 2023, pp. 1-4.
Office Communication for Japanese Patent Application No. JP 2021-505304 mailed May 9, 2023, pp. 1-6.
Office Communication for U.S. Appl. No. 17/891,970 mailed Jun. 16, 2023, pp. 1-11.
Communication for U.S. Appl. No. 17/397,442 mailed Jun. 23, 2023, pp. 1-15.
Office Communication for U.S. Appl. No. 17/891,970 mailed Feb. 12, 2024, pp. 1-8.
Decision to Grant for Japanese Patent Application No. JP 2021-505304 mailed Feb. 5, 2024, 06 Pages including English translation.
International Search Report and Written Opinion for International Patent Application No. PCT/US2023/080392 mailed Feb. 27, 2024, 15 Pages.
Office Communication for U.S. Appl. No. 17/980,391 mailed Apr. 12, 2024, 5 Pages.
Extended European Search report for European Patent Application No. EP 21788290.1 mailed Mar. 28, 2024, 9 pages.
Office Communication for European Patent Application No. 19844867.2 mailed Apr. 16, 2024, 8 Pages.
International Preliminary Report on Patentability Chapter I for International Patent Application No. PCT/US2022/047909 mailed May 10, 2024, 5 Pages.
Office Communication for European Patent Application No. EP 19772471.9 mailed May 31, 2024, 9 pages.
Extended European Search report for European Patent Application No. EP 21814490.5 mailed May 28, 2024, 12 pages.
“3rd Generation Partnership Project; Technical Specification Group Services and System Aspects; 3GPP System Architecture Evolution (SAE); Security architecture (Release 15)” 3GPP TS 33.401, V15.11.0, Release 11, Mar. 27, 2020 pp. 1-163.
Gemalto et al., “Background of Relay Node Security Solution”, 3rd Generation Partnership Project (3GPP), Feb. 22-25, 2011, pp. 1-13.
Office Communication for Japan Patent Application No. JP 2021-549237 mailed Jun. 11, 2024, 5 pages including English Translation.
“Automatic Cell Planning (ACP)”, Forsk, Retrieved on Jul. 18, 2024, Webpage available at: <https://www.forsk.com/ automatic-cell-planning-acp> 7 pages.
“NVIDIA Unveils 6G Research Cloud Platform to Advance Wireless Communications With AI”, NVIDIA, Retrieved on Mar. 18, 2024, Available at <https://nvidianews.nvidia.com/news/nvidia-unveils-6g-research-cloud-platform-to-advance-wireless-communications-with-ai>, 2 pages.
Julien Berranger, “SIRADEL releases Bloonet its innovative solution for RAN design automation”, SIRADEL, Retrieved on Oct. 21, 2021, Webpage available at: https://www.siradel.com/siradel-releases-bloonet-its-innovative-solution-for-ran-design-automation/, 6 pages.
“Mapbox Unveils Digital Twin in Partnership with Snowflake and Maxar to Revolutionize Telecom Visualization”, Mapbox, Retrieved on Feb. 26, 2024, Webpage available at: https://www.mapbox.com/press-releases/mapbox-unveils-digital-twin-in-partnership-with-snowflake-and-maxar-to-revolutionize-telecom-visualization, 7 pages.
Monica Wamsley, “Blare Tech Builds 5G Network Planning Tools with CesiumJS”, Cesium, Retrieved on Jan. 30, 2024, Webpage available at: https://cesium.com/blog/2024/01/30/blare-tech-builds-5g-network-planning-tools-with-cesiumjs/, 6 pages.
“Bridging the Gap Between Indoor and Outdoor Wireless”, iBwave Reach, iBwave Solutions Inc., 1994-2020, 5 pages.
Terragraph Mesh, Retrieved on Jul. 18, 2024, Webpage Available at: <https://terragraph.com/assets/files/Terragraph_Mesh_Whitepaper-d906f1eb9c3ea7a8c1bbd8552b1f9f2d.pdf>, 11 pages.
“Canny edge detector”, Scikit-image, Retrieved on Jul. 18, 2024, Webpage available at: <https://scikit-image.org/docs/stable/auto_examples/edges/plot_canny.html#sphx-glr-auto-examples-edges-plot-canny-py>, 2 pages.
“5G Fixed Wireless Access: Can FWA meet our cities needs?”, Digital Twin Sim, Retrieved on Jul. 18, 2024, Webpage Available at: https://www.digitaltwinsim.com/fwa_modeling, 07 pages.
ETSI, “5G; Study on channel model for frequencies from 0.5 to 100 GHz (3GPP TR 38.901 version 17.1.0 Release 17)”, ETSI TR 138 901, version 17.1.0, Release 17, Jan. 2024, 99 pages.
Office Communication for U.S. Appl. No. 18/530,034 mailed Jul. 15, 2024, pp. 1-7.
Office Communication for Japanese Patent Application No. JP 2020-548724 mailed Mar. 8, 2023, pp. 1-9.
Shimura, Tatsuhiro et al., “A study of indoor area expansion by quasi-millimeter wave repeater,” The Collection of Lecture Articles of the 2018 IEICE General Conference, Mar. 2018, pp. 1-5.
Office Communication for U.S. Appl. No. 17/334,105 mailed Nov. 30, 2022, pp. 1-7.
Office Communication for U.S. Appl. No. 17/576,832 mailed Dec. 15, 2022, pp. 1-15.
Falconer, David D. et al., “Coverage Enhancement Methods for LMDS,” IEEE Communications Magazine, Jul. 2003, vol. 41, Iss. 7, pp. 86-92.
Office Communication for U.S. Appl. No. 17/708,757 mailed Jan. 20, 2023, pp. 1-5.
Office Communication for U.S. Appl. No. 17/379,813 mailed Feb. 3, 2023, pp. 1-10.
Office Communication for U.S. Appl. No. 17/112,895 mailed Feb. 6, 2023, pp. 1-8.
Office Communication for U.S. Appl. No. 17/379,813 mailed Feb. 15, 2023, pp. 1-3.
Office Communication for U.S. Appl. No. 17/859,632 mailed Feb. 28, 2023, pp. 1-13.
International Search Report and Written Opinion for International Patent Application No. PCT/US2022/047909 mailed Feb. 21, 2023, pp. 1-7.
Cheng et al., “Real-time two-dimensional beam steering with gate-tunable materials: a theoretical investigation”, Applied Optics, vol. 55, No. 22, Aug. 1, 2016, pp. 6137-6144.
Wolf et al., “Phased-Array Sources Based on Nonlinear Metamaterial Nanocavities”, Nature Communications, vol. 6, 7667, 2015 Macmillan Publishers Limited, pp. 1-6.
Examination Report No. 1 for Australian Patent Application No. 2019239864, mailed Jul. 7, 2022, pp. 1-3.
Intention to Grant for European Patent Application No. 20759272.6 mailed Sep. 19, 2023, 11 pages.
International Preliminary Report on Patentability Chapter 1 for International Patent Application No. PCT/US2018/066329 mailed Jul. 23, 2020, pp. 1-7.
International Preliminary Report on Patentability Chapter I for International Patent Application No. PCT/US2019/022987 mailed Oct. 1, 2020, pp. 1-9.
International Preliminary Report on Patentability Chapter I for International Patent Application No. PCT/US2019/041053 mailed Feb. 11, 2021, pp. 1-6.
International Preliminary Report on Patentability Chapter I for International Patent Application No. PCT/US2019/047093 mailed Apr. 1, 2021, pp. 1-5.
International Preliminary Report on Patentability Chapter I for International Patent Application No. PCT/US2020/013713 mailed Aug. 19, 2021, pp. 1-6.
International Preliminary Report on Patentability Chapter I for International Patent Application No. PCT/US2020/016641 mailed Sep. 2, 2021, pp. 1-5.
International Preliminary Report on Patentability Chapter I for International Patent Application No. PCT/US2020/048806 mailed Jul. 14, 2022, pp. 1-7.
International Preliminary Report on Patentability Chapter I for International Patent Application No. PCT/US2021/034479 mailed Dec. 8, 2022, pp. 1-5.
International Preliminary Report on Patentability Chapter I for International Patent Application No. PCT/US2021/043308 mailed Feb. 16, 2023, pp. 1-6.
International Preliminary Report on Patentability Chapter I for International Patent Application No. PCT/US2021/049502 mailed Mar. 23, 2023, pp. 1-6.
International Preliminary Report on Patentability Chapter I for International Patent Application No. PCT/US2022/012613 mailed Jul. 27, 2023, pp. 1-6.
International Preliminary Report on Patentability Chapter I for International Patent Application No. PCT/US2022/013942 mailed Aug. 10, 2023, pp. 1-6.
International Preliminary Report on Patentability Chapter I for International Patent Application No. PCT/US2021/026400 mailed Oct. 27, 2022, pp. 1-5.
International Preliminary Report on Patentability for International Patent Application No. PCT/US2019/022942 mailed Oct. 1, 2020, pp. 1-8.
International Search Report and Written Opinion for International Patent Application No. PCT/US2018/066329 mailed May 31, 2019, pp. 1-8.
Notice of Acceptance for Australian Patent Application No. 2019239864 mailed Jan. 16, 2023, pp. 1-3.
Office Communication for U.S. Appl. No. 15/870,758 mailed Apr. 16, 2019, pp. 1-10.
Office Communication for U.S. Appl. No. 15/925,612 mailed Dec. 19, 2018, pp. 1-12.
Office Communication for U.S. Appl. No. 16/049,630 mailed Feb. 18, 2020, pp. 1-5.
Office Communication for U.S. Appl. No. 16/730,690 mailed Apr. 21, 2021, pp. 1-2.
Office Communication for U.S. Appl. No. 16/846,670 mailed Apr. 21, 2021, pp. 1-2.
Office Communication for U.S. Appl. No. 17/203,255 mailed May 5, 2022, pp. 1-2.
Office Communication for U.S. Appl. No. 17/397,442 mailed Sep. 8, 2023, pp. 1-16.
Office Communication for U.S. Appl. No. 17/891,970 mailed Sep. 25, 2023, pp. 1-8.
Search Report for Chinese Patent Application No. 201980019925.1 mailed on Sep. 19, 2021, pp. 1-2.
U.S. Appl. No. 62/743,672, filed Oct. 10, 2018, pp. 1-278.
Extended European Search report for European Patent Application No. EP 20908525.7 mailed Jan. 3, 2024, 11 pages.
Nawaz et al., “Double-Differential-Fed, Dual-Polarized Patch Antenna With 90 dB Interport RF Isolation for a 2.4 GHZ In-Band FullDuplex Transceiver”, IEEE Antennas and Wireless Propagation Letters, vol. 17, No. 2, Feb. 2018, pp. 287-290.
International Search Report and Written Opinion for International Patent Application No. PCT/US2023/034033 mailed Dec. 12, 2023, 13 Pages.
International Preliminary Report on Patentability Chapter I for International Patent Application No. PCT/ US2022/036381 mailed Jan. 18, 2024, 6 Pages.
Office Communication for Korean Patent Application No. 10-2021-7029953 mailed Jan. 2, 2024, 8 Pages including English translation.
Office Communication for Korean Patent Application No. KR 10-2021-7006085 mailed Aug. 20, 2024, 11 pages including English Translation.
Pandi et al., “Antenna beam forming using holographic artificial impedance surface”, IEEE, Jul. 17, 2014, 16th International Symposium on ANTEM, pp. 1-2.
Examination Report No. 1 for Australian Patent Application No. 2020226298, mailed Aug. 27, 2024, pp. 1-2.
Office Communication for Korean Patent Application No. KR 10-2021-7029953 mailed Sep. 2, 2024, 5 pages including English Translation.
Office Communication for Korean Patent Application No. KR 10-2022-7026864 mailed Aug. 26, 2024, 13 pages including English Translation.
Office Communication for Japan Patent Application No. JP 2022-562458 mailed Sep. 5, 2024, 8 pages including English Translation.
Office Communication for U.S. Appl. No. 18/244,541 mailed Aug. 14, 2024, pp. 1-15.
Office Communication for U.S. Appl. No. 17/334,105 mailed Oct. 25, 2023, pp. 4.
Office Communication for U.S. Appl. No. 18/136,238 mailed Oct. 25, 2023, pp. 1-9.
Office Communication for U.S. Appl. No. 17/334,105 mailed Nov. 8, 2023, pp. 1-13.
Office Communication for U.S. Appl. No. 17/334,105 mailed Nov. 16, 2023, pp. 2.
Office Action for Japanese Patent Application No. JP 2021-505304 mailed Oct. 26, 2023, 06 Pages including English translation.
Office Action for Japanese Patent Application No. JP 2021-549237 mailed Oct. 16, 2023, 06 Pages including English translation.
Office Communication for U.S. Appl. No. 18/205,433 mailed Dec. 12, 2023, 17 Pages.
Office Communication for U.S. Appl. No. 17/980,391 mailed Nov. 21, 2023, 10 Pages.
Office Communication for U.S. Appl. No. 17/859,632 mailed Dec. 18, 2023, 10 Pages.
Office Communication for Korean Patent Application No. 10-2020-7029161 mailed Dec. 11, 2023, 6 Pages including English translation.
Office Communication for Japanese Patent Application No. JP 2020-548724 mailed Oct. 2, 2023, 05 Pages including English translation.
Related Publications (1)
Number Date Country
20230126395 A1 Apr 2023 US
Provisional Applications (1)
Number Date Country
63272007 Oct 2021 US