Patent Application
20180083098
This application relates generally to transistors, and more particularly to semiconductor devices with reduced substrate coupling between the transistors and the substrate.
In a silicon-on-insulator device, the transistors are formed in an active layer over a buried oxide layer. The buried oxide layer isolates the active layer from an underlying substrate. Although this isolation is substantial, a semiconductor such as silicon will tend to have free carriers at interfaces with the buried oxide layer. These free carriers create a strong non-linear response in RF devices such as switches, inductors, low noise amplifiers, power amplifiers, and capacitors from the resulting capacitive coupling between the free carriers and these components. In particular, the coupling undesirably accentuates the second and third harmonics of the RF signal conducted by the affected devices.
A conventional way to address the non-linear coupling is by replacing the silicon substrate with a dielectric such as in a silicon-on-sapphire approach. But such an approach is very costly and difficult to manufacture. Alternatively, the silicon substrate may include a trap-rich layer to interface with the buried oxide layer. In yet another approach, layer transfer processes are used in which the substrate is removed from the buried oxide layer and replaced with a top-side handle wafer above the dielectric and metal layers produced in the backside-end-of-line (BEOL) processing. But such a handle wafer will also undesirably couple with the RF components such that it may be further isolated through a trap-rich layer. However, the trap-rich layer isolation does not fully cure the non-linear coupling regardless of whether a layer transfer process is used or not. The resulting second and third harmonics of the RF signal tend to be very undesirable due to, for example, Federal Communications Commission requirements that limit the amount of RF energy that may be leaked outside of the licensed band.
There is thus a need in the art for greater isolation for semiconductor-on-insulator architectures.
To provide improved isolation between the active devices in a semiconductor-on-insulator architecture, an etch stop layer is provided between an intervening portion of the semiconductor substrate and the buried oxide layer. The etch stop layer is thus separated from the buried oxide layer by the intervening portion of substrate. The buried oxide layer includes a plurality of through-buried-oxide-layer vias through which the intervening portion of the substrate is etched away. An active layer on the buried oxide layer is thus separated from the etch stop layer by the free space of a cavity. Alternatively, the free space may be filled or partially filled with dielectric material.
The substrate is thus isolated from the active layer on the buried oxide layer by the free space of the cavity and the etch stop layer. The free space isolates the substrate from the RF signals conducted through the devices in the active layer and also through the metal layers above the active layer. Accordingly, the non-linear coupling that produced second and third harmonics in conventional semiconductor-on-insulator architectures is eliminated.
In an alternative embodiment, the substrate does not include a buried oxide layer. Instead, a second etch stop layer is used to define the portion of substrate that will be removed by etching to form the cavity.
These and additional advantages may be better appreciated through the following detailed description.
Embodiments of the present invention and their advantages are best understood by referring to the detailed description that follows. It should be appreciated that like reference numerals are used to identify like elements illustrated in one or more of the figure.
A semiconductor-on-substrate device is provided that includes a cavity between a buried oxide layer and an etch stop layer. The buried oxide layer supports an active layer containing transistors and includes a plurality of through vias through which an intervening portion of a substrate between the etch stop layer and the buried oxide layer is etched away to form the cavity. A remainder of the substrate is protected from the etching by the etch stop layer. The cavity may comprise free space filled with air or be partially filled with a dielectric material. Regardless of whether the cavity is partially filled with dielectric material or not, the resulting isolation between the remainder of the substrate and the active layer substantially eliminates parasitic coupling between the remaining substrate and the active layer. Transistors in the active layer may thus conduct RF signals without the generation of undesirable second and third harmonics from any parasitic coupling with the substrate.
The substrate in the following example embodiments is silicon such that the semiconductor-on-insulator architecture is a silicon-on-insulator architecture. But it will be appreciated that the devices and techniques disclosed herein may be readily adapted to other semiconductor substrates such as III-V semiconductor substrates. An example silicon-on-insulator device 100 is shown in
Active layer 160 also include a plurality of metal layers such as metal layers M1, M2, M3, and M4 that are separated by dielectric material 150. The metal layers couple together through a plurality of vias 135 to transistors 145 as well as to pads 130 so that signals may be driven into and out of device 100. Should these signals be RF signals, the resulting electrical activity would tend to undesirably parasitically couple with substrate 120. But this coupling is substantially eliminated by cavity 105 without the complication and expense of processing steps such as the introduction of a trap-rich layer. Moreover, the isolation provided by cavity 105 offers greater reduction of second and third harmonics of the RF signals than conventional trap-rich layer approaches. In addition, this isolation avoids the expense and complication of exotic substrate architectures such as silicon-on-sapphire architectures.
Etch stop layer 115 may be formed using an epitaxial deposition process or through ion implantation. In an epitaxial deposition, etch stop layer 115 would be deposited on a portion of substrate 120. An additional epitaxial deposition of another portion of substrate 120 would then cover etch stop layer 115 prior to the deposition of buried oxide layer 110. Buried oxide layer 110 covers this portion of substrate 120 and in turn is covered by an active layer 160 that includes a device layer of silicon 125 in which transistors 145 are formed. The manufacture of silicon-on-insulator device 100 will now be explained in more detail with regard to an ion implantation process for forming etch stop layer 115.
Silicon-On-Insulator with Cavity Isolation Manufacture
A silicon wafer or substrate 120 is processed such as through conventional silicon-on-insulator techniques to include a buried oxide (BOX) layer 110 that separates substrate 120 from a device silicon layer 125 (which may also be denoted as a top silicon layer) as shown in
With etch stop layer 115 completed, transistors 145 may be formed on device silicon layer 125 as shown in
After transistors 145 are completed and covered with inter-layer dielectric (ILD) 150, through vias 140 are formed as shown in
A wet etch process may then be used to etch away the intervening portion of substrate 120 between buried oxide layer 110 and etch stop layer 115 to form cavity 105 as shown in
Referring back to
Transistors 145 in silicon-on-insulator device 100 may advantageously conduct RF signals without the excitation of second and third harmonics due to the isolation provided by cavity 105 that isolates transistors 145 (as well as metal layers M1 through M4 and associated vias 135) from parasitically coupling with the remainder of substrate 120 below etch stop layer 115. Moreover this isolation is more effective than the use of trap-rich layers and can be produced at lower cost.
To better limit the lateral etching of cavity 105, it may be laterally demarcated by deep separation dielectric trenches 305 as shown in
The use of a buried oxide layer may be eliminated by introducing a top etch stop layer 405 as shown for a semiconductor device 400 of
The method of manufacture as shown in the flowchart of
The method also includes an act 505 of forming a buried oxide layer and an active device layer on the first portion of the substrate. The formation of buried oxide layer 110 and silicon device layer 125 is an example of act 505. It will be appreciated that if an ion implantation step is used to form etch stop layer 115, act 500 is performed after act 505. Conversely, should etch stop layer 115 be epitaxially deposited, act 500 would be performed prior to act 505.
Finally, the method includes an act 510 of etching the first portion of the substrate to form a cavity between the buried oxide layer and the first surface of the etch stop layer. The etching of cavity 105 as discussed with regard to
As those of some skill in this art will by now appreciate and depending on the particular application at hand, many modifications, substitutions and variations can be made in and to the materials, apparatus, configurations and methods of use of the devices of the present disclosure without departing from the scope thereof. In light of this, the scope of the present disclosure should not be limited to that of the particular embodiments illustrated and described herein, as they are merely by way of some examples thereof, but rather, should be fully commensurate with that of the claims appended hereafter and their functional equivalents.
