The invention relates to the field of the sealing of electronic micro components, especially their encapsulation in order to protect them against damage caused by gases or fluids.
In some applications, electronic micro components have to be placed in a vacuum in order to protect them against gases such as oxygen and nitrogen or liquids which would otherwise damage them. Examples of such applications include voltaic cells, light-emitting diodes and lithium micro batteries.
A first possible effective solution is to bond a solid sheet of glass directly onto the electronic micro component. However, this solution is incompatible with very small surface areas, does not give the micro component any flexibility and, generally speaking, is too bulky for applications which demand further size reduction.
Because placing a sheet of solid material onto a component is restrictive in the field of microelectronics, thin-film deposition techniques are generally used to obtain the sought-after sealing properties. Nevertheless, depositing thin films by using physical or chemical deposition methods does not provide a perfect seal. In fact, a thin film obtained using such techniques usually contains gas diffusion paths due to growth defects in the actual layer at the time it is deposited. This is why spaces which are sealed by depositing a thin film are usually provided with getters which absorb gases which infiltrate into said sealed spaces through diffusion paths.
Another way of minimizing the problems associated with the existence of diffusion paths is to successively stack several thin films in order to decouple growth defects, thus lengthening the diffusion paths for gas molecules as described, for example, in Documents US 2004/023847, WO 2003/069714, WO 247187 et U.S. Pat. No. 6,737,192.
Research has also been conducted on materials which comprise various layers in an attempt to minimize the inherent problems of gas diffusion paths. For example, the documents cited above also propose alternating layers of different materials and each of the documents suggests particular choices of materials (metal oxide, nitride, metal carbide, dielectric, epoxy, ceramic, etc.).
Sealing by using thin films according to the prior state of the art proves to be extremely tricky and expensive because it involves using at least a dozen layers in order to obtain leakage rates which, even then, are sometimes inadequate.
The object of the present invention is to propose a method for producing a seal barrier for micro components which is almost perfectly leak tight and comprises a minimum number of layers even when conventional deposition techniques are used, especially physical vapor deposition.
To achieve this, the object of the invention is a method for producing a seal barrier for micro components which comprises a stack of two thin sealing films.
According to the invention, the method involves forming a fusible interlayer between the two sealing layers, said fusible interlayer having a melting temperature which is lower than that of the two sealing layers and melting said interlayer.
In other words, melting the interlayer effectively blocks the diffusion paths in the sealing layers. There is therefore no longer any need to provide dozens of deposited layers or even to provide combinations of various materials for these layers. Satisfactory sealing is thus obtained straightforwardly.
Advantageously, the fusible interlayer is made of indium.
According to another advantageous aspect of the invention, the interlayer has eutectic properties.
According to another advantageous aspect of the invention, the interlayer consists of a block of eutectic material.
The object of the invention is also a seal barrier for micro components which comprises at least one stack of two thin sealing films. According to the invention, the barrier comprises a fusible interlayer between at least two sealing layers, said fusible interlayer having a melting temperature which is lower than that of the two sealing layers.
The invention will be made more readily understandable by the following description which is given merely by way of example and relates to the accompanying drawings in which:
In
A seal barrier 14 according to the invention is produced in order to seal micro component 10. This barrier 14 comprises a stack consisting of:
Each of layers 16, 18, 20 is successively obtained, for example, using a classic vapor or chemical deposition technique such as Physical Vapor Deposition (PVD) or Chemical Vapor Deposition (CVD).
The material from which fusible interlayer 18 is made is selected so that its melting temperature is less than the melting temperature of sealing layers 16 and 20 and lower than the stability temperature of substrate 10.
Sealing layers 16 and 20 are preferably made of a material which has a high melting temperature such as alumina (Al2O3), for example, which has a melting temperature of 2000° C.
Having produced stacked layers 16, 18 and 20, the device thus obtained is subjected to heating which causes interlayer 18 to melt without causing layers 16 and 20 to melt or damaging substrate 12 or component 10. For example, this heat treatment is performed inside the actual chamber used to form stacked layers 16, 18 and 20 by vacuum deposition.
The melting material of interlayer 18 then blocks any pores in layers 16 and 20 which are present due to the inherent growth defects associated with the deposition techniques used to produce layers 16, 18 and 20.
In a first version of the invention, interlayer 16 consists of a single material having a low melting temperature such as indium which has a melting temperature of 157° C.
In a second version of the invention, interlayer 16 is made of an eutectic material having a low melting point, especially a eutectic material selected from the following alloys:
According to a second embodiment of the invention shown in
According to the second embodiment, the first and second materials can be selected from the above-mentioned list. The eutectic is thus generally formed at the interfaces between the materials that form particles and the material that forms the matrix.
In a third embodiment of the invention shown in
Between them, these sublayers 26 and 28 form a eutectic which has a melting temperature that is lower than the melting temperature of layers 16 and 20 and lower than the stability temperature of substrate 12. The eutectic is formed at the interface between sublayers 26 and 28.
This third embodiment can be an alternative which is easy to implement and can be used instead of the first embodiment if the alloys could be difficult to obtain.
The invention thus produces an effective seal barrier in only three layers, although several stacks as described above are feasible, depending on the applications in question. In particular, it is possible to envisage there being more than one fusible interlayer.
In one development of the invention, interlayer 18 can be formed in situ on the basis of a eutectic formed at the interface between layers 16 and 20 by heat treatment. Obviously, the materials which constitute said layers 16 and 20 are advantageously selected in order to form a eutectic having a melting temperature which is lower than that of each of the two materials such as gold or tin.
The method for producing a seal barrier according to the invention is thus especially suitable for encapsulating electronic circuits such as lithium micro batteries for instance.
In addition, there is no need to resort to non-standard materials to produce sealing layers 16 and 20 in order to ensure sealing. This allows greater latitude when choosing the materials that make up these layers which may then even fulfill additional functions other than acting as a barrier to prevent the diffusion of gases, e.g. providing a thermal barrier, protection against mechanical stresses, a protective enclosure or even electrical insulation.
Advantageously, alumina is chosen to form layers 16 and 20 because of its high melting temperature, as described above, but also because of its considerable hardness (alumina has a hardness of 20 gigapascals) and its electrical insulation and thermal protection properties. The alumina can be reactively synthesized by evaporation or sputtering titanium in an atmosphere containing oxygen or directly by evaporating or sputtering the compound as described in the literature (for example Alain BILLARD, Frédéric PERRY “Pulvérisation cathodique magnétron” [Magnetron cathode sputtering]—Techniques de l'ingénieur, M1 654).
Thus, in the context of encapsulating a lithium micro battery, one uses the following steps:
Number | Date | Country | Kind |
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09.50437 | Jan 2009 | FR | national |