Components (logic gates, transistors, memory cells and so forth) have traditionally been fabricated in an integrated circuit (IC) in a single level that includes multiple layers. In this manner, the level includes layers to form doped wells, inner wells, gate contacts, gate dielectric layers, logic traces, metal contacts, vias, trace wiring, and so forth for purposes of forming components of the level, which are distributed in the two dimensional (2-D) space of the level. For purposes of increasing component density, a more recently introduced IC manufacturing technology may be used to create a three-dimensional (3-D) IC, also referred to as a multi-level IC. As its name implies, the multi-level IC contains multiple levels in which the levels and components contained therein are “stacked” on each other.
Systems and techniques are disclosed herein for fabricating and selectively activating circuits associated with different levels of a three-dimensional (3-D), or multi-level, integrated circuit (IC). This selection may be used, for example, in a multi-level memory device for purposes of selecting vertically stacked memory storage cells that are fabricated on different levels of the memory device. The techniques and systems that are disclosed herein may be used in many other applications, as can be appreciated by the skilled artisan in view of the description, drawings and claims.
It is noted that the multi-level IC may be fabricated using one of many different manufacturing technologies for fabricating such an IC. As examples, in some implementations, the multi-level IC may be fabricated on a monolithic substrate. In other implementations, such manufacturing processes as die-on-die, wafer-on die or wafer-on-wafer fabrication may be employed. Moreover, the multi-level IC may or may not include a semiconductor substrate, depending on the particular implementation. For example, in some implementations, the multi-level IC may be a memristor memory device that is formed from metal oxides in a non-semiconductor substrate, and which does not include a semiconductor substrate. In further implementations, as another example, the multi-level IC may be a memristor memory device that includes a semiconductor substrate that contains logic to aid in the level selection. Moreover, although example references are made herein to terms associated with photolithography (such as mask sets, for example), other microlithographic techniques (nano-imprint lithography or interference lithography and the associated mold sets, as examples) may be used, in accordance with further example implementations. Thus, many variations are contemplated, which are within the scope of the appended claims.
Referring to
For example implementations that are disclosed herein, each level 15 has an associated exemplary circuit 20 (circuits 20-1, 20-2 . . . 20-N being depicted in
For purposes of the circuit selection, each circuit 20 contains a level select circuit 22 (level select circuits 22-1, 22-2 . . . 22-N being depicted in
In accordance with exemplary systems and techniques that are disclosed herein, the level select circuits 22 are identical in design, and in accordance with some implementations the circuits 20 may be identical in design (for example, the level select circuits 22 and associated memory cells may be identical in design). Due to the use of identical circuits for the different levels 15, the number of masks that may otherwise be used to fabricate the multi-level IC 10 is significantly reduced, thereby decreasing costs involved in fabricating the IC 10. In other words, in accordance with example implementations, the level select circuits 22 and/or the circuits 20 may be fabricated using the same mask set.
Although the level select circuits 22 may be identical, techniques and systems are disclosed herein for purposes of selectively activating the level select circuits 22 using a single SID level selection signal that is provided to the level select circuit 22 at the top or bottom of the stack (depending on the implementation) and serially propagates through the remaining level select circuits 22. Being identical, the level select circuits 22 are each constructed to be activated when the received SID level selection signal indicates, or represents, the same given predetermined value. In this regard, as disclosed herein, as the SID level selection signal propagates through the level select circuits 22, each circuit 22 alters the value indicated by the signal, thereby allowing the signal to, for one of the circuits 22, indicate a value that triggers the selection/activation of the circuit 22.
More specifically, in accordance with an example implementation, the uppermost level select circuit 22-1 receives an SID-1 level selection signal, where the “-1” suffix denotes the SID level selection signal representing a particular value (a certain “count,” for example). Here, the “-1” suffix denotes the SID-1 level selection signal as representing its initial value. As an example, the SID-1 level selection signal may be furnished by a row or column address decoder (for implementations in which the multi-level IC 10 is a memory device, for example). The uppermost level select circuit 22-1 alters the SID-1 level selection signal (in the same manner that the other level select circuits 22 alter the received SID level selection signal) before furnishing the altered signal (now called the “SID-2” level selection signal) to the next level select circuit 22-2 in the serial chain of level select circuits 22.
As a more specific example, in accordance with some implementations, each level select circuit 22 is constructed to perform a mathematic alteration of the received SID level section signal to add or subtract a certain value. For example, in some example implementations, each level select circuit 22 is constructed to increment, or add a “1,” to a count value that is indicated by the received SID level selection signal. In further implementations, each level select circuit 22 is constructed to decrement, or subtract “1” from the received SID selection signal. For example, the level selection signal SID-1 may indicate an initial count value of “0.” The uppermost level select circuit 22-1 increments the count value so that the SID-1 level selection signal indicates a count value of “1.” Likewise, the level select circuit 22-2 increments the count value so that the SID-3 level selection signal indicates a count value of “2.” Thus, in general, an SID-N level selection signal that is received by a given level select circuit 22-N has a count value that is one less than the count value of the SID-N+1 level selection signal that is provided by the level select circuit 22-N to the next level select circuit 22-N+1. Therefore, although the level select circuits 22 are identical and are constructed to be selected/activated by the same value, because each level select circuit 22 receives a different value, the initial value indicated by the SID-1 level selection signal may be adjusted as appropriate to select/activate a given circuit 22.
As an example, the level select circuit 22, in general, may be constructed to be activated in response to receiving an SID selection signal that indicates a value of “5.” To select the uppermost level select circuit 22-1, an SID-1 selection signal indicating a value of “5” may therefore be furnished to the circuit 22-1. The level select circuit 22-1, as well as the other level select circuits 22 alter this value so that none of the other circuits 22 receive an SID selection signal that indicates a value of “5.” Continuing the example, if the third level select circuit 22-3 (not shown in
In accordance with an example implementation, the level select circuit 22 may be formed from four layers 30 that are depicted in
The first, or lowermost, layer 30-1 (
The three input terminals 54 of the counter 50 are coupled by vias 60 of the third layer 30-3 (see
Less dense coding may be employed, in accordance with further implementations, for purposes of minimizing the complexity of the level select circuit 22. In this manner, in further implementations, a one hot counter may be employed, in which the level select circuit 22 does not contain any logic devices. In the one hot counter design, one bit of the three bit value (assuming a three bit value for this example) is a logic one, with the remaining two bits being logic zeros. The logic one bit (i.e., the “hot bit”) is shifted, or rotated, in bit position by each level select circuit 22 so that values as they propagate through the circuits 22 to form a sequence of a repeating pattern of three: 100, 010, 001, 100, 010, 001, 100, 010, and so forth. Such a design may be particularly advantageous for certain devices (memristor devices, for example) that may not otherwise logic or employ use a semiconductor substrate.
As a more specific example,
The second layer 70-2 (
Using the one hot counter, level selection may be performed as follows. For this example, the shift is a right shift (a right rotate such that a right shift of the bits “001” produces the bits “100”); at each level, the right shift is performed before the comparison is made to detect selection of the level; and the level select indication is tied to the rightmost bit, so that the level that has the bits “001” after it right shifts is considered selected. As an example, the uppermost level select circuit 22 may receive SID-1 level selection signal (see
Referring to
Thus, for this example, five vias may address six levels. By selecting the size of the two one hot counters to be relatively prime numbers j and k, j*k levels may be selected using the j+k vias. In accordance with some example implementations, the j and k number of vias may be set to be nearly as equal as possible, which allows for relatively more efficient selection than, for example, a single one hot encoded signal. For example, for j=6 and k=5, these eleven vias may select thirty levels. Similarly, in further example implementations, three or four sets of one hot signals, all relatively prime, may be used with a larger capacity AND gate. Thus, a set of three wide, four wide and five wide one hot signals may be used, for example, for purposes of addressing sixty levels using twelve vias and a three input AND gate. Once again, the closer the number of vias of the different sets, the larger the range. For example, a two wide, three wide and five wide arrangement of vias permits the selection of thirty levels with ten vias using a three input AND gate.
Other implementations are contemplated and are within the scope of the appended claims. For example, in accordance with further example implementations, non-relatively prime counter sizes (j=7 and k=4 to allocate eleven vias to select twenty eight levels, as an example) may be selected. As another example, in accordance with further implementations, inverse signaling, such as the use of a one cold counter (i.e., the bit indicative of logic zero is the “cold” bit with the other bits being logic ones) may allow a reduction in logic size by allowing the use of a NOR gate to provide the LEVEL SELECT signal instead of using the above-described AND gate. Other variations are contemplated, which are within the scope of the appended claims.
Thus, referring to
The circuits 20 may be used in a multi-level integrated circuit in numerous different applications, depending on the particular implementation. For example, referring to
Among the advantages of the level selection techniques and apparatuses disclosed herein, multiple mask sets or electronic beam editing per level of circuitry may not be used. Moreover, the logic supportive on each level may be fairly low performance and/or low area. Moreover, as disclosed herein, the level selection may not contain any logic. Additionally, in the case of a memory device, the level selection potentially reduces the number of vias, as compared to providing the signals to individually address each level separately. Other and different advantages are contemplated, in accordance with the scope of the appended claims.
While a limited number of examples have been disclosed herein, those skilled in the art, having the benefit of this disclosure, will appreciate numerous modifications and variations therefrom. It is intended that the appended claims cover all such modifications and variations.
Filing Document | Filing Date | Country | Kind |
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PCT/US2013/024097 | 1/31/2013 | WO | 00 |