Patent Grant
11898240
The present disclosure relates generally to selective deposition of silicon oxide on a first dielectric surface relative to a second metal or metallic surface of a substrate.
The shrinking device dimensions in semiconductor manufacturing call for new innovative processing approaches. Conventionally, patterning in semiconductor processing involves subtractive processes, in which blanket layers are deposited, masked by photolithographic techniques, and etched through openings in the mask. Additive patterning is also known, in which masking steps precede deposition of the materials of interest, such as patterning using lift-off techniques or damascene processing. In most cases, expensive multi-step lithographic techniques are applied for patterning.
Patterning could be simplified by selective deposition, which has received increasing interest among semiconductor manufacturers. Selective deposition would be highly beneficial in various ways. Significantly, it could allow a decrease in lithography steps, reducing the cost of processing. Selective deposition could also enable enhanced scaling in narrow structures.
Thin films comprising silicon dioxide are used in many different applications in microelectronic devices, for example, as dielectric materials. Silicon dioxide is one of the most commonly used dielectric materials in silicon microelectronic devices.
In some aspects, methods of selectively depositing silicon oxide on a dielectric surface of a substrate relative to a metal surface of the substrate are provided. In some embodiments, methods of selectively depositing silicon oxide on the dielectric surface of the substrate relative to the metal surface of the substrate comprise, in order: selectively passivating the dielectric surface relative to the metal surface; selectively forming a polymer passivation layer on the metal surface; contacting the dielectric surface with a metal catalyst; and contacting the dielectric surface with a silicon reactant comprising a silanol
In some embodiments, the metal surface comprises one or more of Al, Cu, Co, Ni, W, Nb, Fe, and Mo. In some embodiments, the dielectric surface comprises silicon oxide. In some embodiments, selectively passivating the dielectric surface comprises contacting the dielectric surface with a silylating agent. In some embodiments, the silylating agent comprises an alkylaminosilane. In some embodiments, the alkylaminosilane has the formula (RI)3Si(NRIIRIII), wherein RI is a linear or branched C1-C5 alkyl group or a linear or branched C1-C4 alkyl group, RII is a linear or branched C1-C5 alkyl group, a linear or branched C1-C4 alkyl group, or hydrogen, and RIII is a linear or branched C1-C5 alkyl group or a linear or branched C1-C4 alkyl group. In some embodiments, the silylating agent comprises allyltrimethylsilane (TMS-A), chlorotrimethylsilane (TMS-Cl), N-(trimethyl silyl)imidazole (TMS-Im), octadecyltrichlorosilane (ODTCS), hexamethyldisilazane (HMDS), or N-(trimethylsilyl)dimethylamine (TMSDMA).
In some embodiments, methods of selectively depositing silicon oxide on the dielectric surface of the substrate relative to the metal surface of the substrate further comprise treating the dielectric surface with plasma after selectively forming the polymer passivation layer on the metal surface and prior to contacting the dielectric surface with the metal catalyst. In some embodiments, the plasma comprises H2 plasma.
In some embodiments, the metal catalyst comprises trimethyl aluminum (TMA), dimethylaluminumchloride, aluminum trichloride (AlCl3), dimethylaluminum isopropoxide (DMAI), tris(tert-butyl)aluminum (TTBA), tris(isopropoxide)aluminum (TIPA) or triethyl aluminum (TEA). In some embodiments, the metal catalyst comprises a metal compound comprising Zn, Mg, Mn, La, Hf, Al, Zr, Ti, Sn, or Ga. In some embodiments, the metal catalyst is a metal halide, organometallic compound, or metalorganic compound. In some embodiments, the silicon reactant comprises tris(tert-butoxy)silanol (TBS), tris(isopropoxy)silanol (TIS), or tris(tert-pentoxy)silanol (TPS). In some embodiments, the polymer passivation layer comprises a self-assembled monolayer (SAM). In some embodiments, a SAM is formed by exposing the substrate to a thiol polymer. In some embodiments, the polymer passivation layer comprises a polyimide layer.
In some embodiments, the selectivity of deposition of silicon oxide on the catalyzed dielectric surface relative to the passivated metal surface is greater than about 50%.
In some embodiments, methods of selectively depositing silicon oxide on a dielectric surface of a substrate relative to a metal surface of the substrate are provided, which comprise: selectively forming a polymer passivation layer on the metal surface, and conducting one or more silicon oxide deposition cycles comprising alternately and sequentially contacting the substrate with a metal catalyst and a silanol. In some embodiments, the methods of selectively depositing silicon oxide on a dielectric surface of a substrate relative to a metal surface of the substrate additionally comprise contacting the dielectric surface with a silylating agent prior to selectively forming the polymer passivation layer on the metal surface.
In some embodiments, the silicon oxide deposition cycle is repeated two or more times in a row. In some embodiments, the substrate is contacted with the silanol two or more times in at least one silicon oxide deposition cycle.
In some embodiments, the silylating agent comprises alyltrimethylsilane (TMS-A), chlorotrimethylsilane (TMS-Cl), N-(trimethylsilyl)imidazole (TMS-Im), octadecyltrichlorosilane (ODTCS), hexamethyldisilazane (HMDS), or N-(trimethylsilyl)dimethylamine (TMSDMA). In some embodiments, the metal catalyst comprises trimethyl aluminum (TMA), dimethylaluminumchloride, aluminum trichloride (AlCl3), dimethylaluminum isopropoxide (DMAI), tris(tert-butyl)aluminum (TTBA), tris(isopropoxide)aluminum (TIPA) or triethyl aluminum (TEA). In some embodiments, the metal catalyst is a metal compound comprising Zn, Mg, Mn, La, Hf, Al, Zr, Ti, Sn, or Ga. In some embodiments, the metal catalyst is a metal halide, organometallic compound or metalorganic compound. In some embodiments, the silane is tris(tert-pentoxy)silanol (TPS). In some embodiments, the polymer passivation layer comprises a polyimide layer. In some embodiments, the polymer passivation layer is a thiol SAM.
The silicon oxide films, such as silicon dioxide films, for example SiO2 films, formed by the methods described herein can be used in a variety of contexts. Silicon oxide films, such as silicon dioxide films, for example SiO2 films, are used, for example, in a wide variety of semiconductor devices, including CMOS, DRAM, flash, and magnetic head applications. Silicon oxide, such as silicon dioxide, for example SiO2, is also commonly used as a gate dielectric for CMOS, as an electrical isolation layer, and gap filling layer. Silicon oxide films, such as silicon dioxide films, for example SiO2 films, can be selectively deposited on dielectric surfaces relative to metal surfaces on a substrate by the methods described herein. In some embodiments, silicon oxide is selectively deposited over a first dielectric surface, such as an oxide surface, relative to a second metal (or metallic) surface through the use of a passivation agent in combination with a catalyst. In some embodiments the dielectric surface is also functionalized prior to selective deposition of the silicon oxide.
In embodiments, the dielectric surface may be selectively passivated or functionalized relative to the metal surface, for example by selectively treating the surface, such as by silylation. In some embodiments the dielectric surface is functionalized by exposure to a silylating agent, such as allyltrimethylsilane (TMS-A), chlorotrimethylsilane (TMS-Cl), N-(trimethylsilyl)imidazole (TMS-Im), octadecyltrichlorosilane (ODTCS), hexamethyldisilazane (HMDS), or N-(trimethylsilyl)dimethylamine (TMSDMA). In some embodiments the functionalization step may be omitted. In some embodiments the passivation may aid in subsequent selective passivation of the metal surface, as described below. In some embodiments the passivated dielectric surface may be treated, such as with a plasma, to provide the desired surface terminations to facilitate catalyst chemisorption, as described in more detail below.
The metal surface is passivated, such as by selectively forming a polymer layer on the metal surface. In some embodiments the silylation of the dielectric surface aids in the selectivity of the formation of the polymer passivation layer on the metal surface.
Subsequently, a catalyst is selectively deposited on the dielectric surface relative to the metal surface. In some embodiments the catalyst is selectively chemisorbed on the dielectric surface. The catalyst may be, for example, a metal catalyst as described in more detail below.
A silicon oxide layer is then selectively deposited on the dielectric surface relative to the passivated metal surface by contacting the substrate with a silicon reactant such as a silanol. The catalyst prepares the surface for reaction with the silanol that leads to catalytic silicon oxide growth selectively on the dielectric surface of the substrate relative to the passivated metal surface. The silicon oxide layer may be deposited by a cyclical vapor deposition process in which the substrate is alternately contacted with the catalyst and the silanol until a silicon oxide film of a desired thickness has been selectively deposited. Following silicon oxide deposition, the polymer passivation layer on the metal surface may be removed, such as by etching.
In some embodiments a dielectric surface, such as an oxide surface, on a substrate is silylated with a silylating agent such as allyltrimethylsilane (TMS-A), chlorotrimethylsilane (TMS-Cl), N-(trimethylsilyl)imidazole (TMS-Im), octadecyltrichlorosilane (ODTCS), hexamethyldisilazane (HMDS), or N-(trimethylsilyl)dimethylamine (TMSDMA), a polymer is selectively deposited on a metal surface of the same substrate, a metal catalyst such as an aluminum catalyst is selectively deposited on the dielectric surface of the same substrate, and silicon oxide is subsequently selectively deposited on the dielectric surface of the substrate relative to the passivated metal surface. For example, a silicon oxide layer may be selectively deposited on a dielectric surface, such as a metal oxide surface, a silicon oxide surface or a low k surface, relative to an adjacent metal surface by, for example, silylating the dielectric surface with a silylating agent, using a thiol SAM or polyimide layer to passivate the metal surface, using trimethyl aluminum (TMA), dimethylaluminumchloride, aluminum trichloride (AlCl3), dimethylaluminum isopropoxide (DMAI), tris(tert-butyl)aluminum (TTBA), tris(isopropoxide)aluminum (TIPA) or triethyl aluminum (TEA) as the catalyst, and a using a silanol such as tris(tert-pentoxy) silanol as the silicon reactant. In some embodiments the silylated dielectric surface is plasma treated prior to contacting the surface with the catalyst.
In some embodiments a metal or metallic surface of a substrate comprises an elemental metal or metal alloy, while a second, different surface of the substrate comprises a dielectric material, such as an oxide. In some embodiments the dielectric surface and metal surface are adjacent to each other or at least partially adjacent to each other. Examples of possible dielectric materials include silicon oxide based materials, including grown or deposited silicon dioxide, doped and/or porous oxides, native oxide on silicon, etc. In some embodiments the dielectric material comprises a metal oxide. In some embodiments the dielectric material comprises a low k material.
The surface of the dielectric material may be selectively functionalized or passivated relative to the metal or metallic surface, such as by selective silylation. In some embodiments the dielectric surface is contacted with a vapor phase passivation agent, such as vapor phase allyltrimethylsilane (TMS-A), chlorotrimethylsilane (TMS-Cl), N-(trimethyl silyl)imidazole (TMS-Im), octadecyltrichlorosilane (ODTCS), hexamethyldisilazane (HMDS), or N-(trimethylsilyl)dimethylamine (TMSDMA). The substrate may be contacted with a sufficient quantity of the passivation agent and for a sufficient period of time that the dielectric surface is selectively passivated with silicon species. In some embodiments the dielectric surface is not passivated with a self-assembled monolayer (SAM).
A polymer passivation layer may be selectively formed on the metal surface relative to the dielectric surface. In some embodiments the passivation agent on the dielectric surface inhibits or prevents formation of the polymer passivation layer on the dielectric surface.
A plasma treatment may be used to activate the dielectric surface. For example, the silylated dielectric surface may be exposed to a H2 plasma.
A catalyst is selectively formed on the dielectric surface relative to the passivated metal surface, such as by contacting the substrate with a catalyst compound. Such a surface may be referred to as a “catalyzed dielectric surface” herein. In some embodiments, the catalyst is a metal catalyst. In some embodiments the substrate is contacted with a metal catalyst as described below. The catalyst may be, for example, a metal compound comprising Zn, Mg, Mn, La, Hf, Al, Zr, Ti, Sn, or Ga. In some embodiments the catalyst is a metal halide, organometallic or metalorganic compound. In some embodiments the catalyst may be a metal oxide. In some embodiments the metal catalyst is an aluminum catalyst comprising trimethyl aluminum (TMA), dimethylaluminumchloride, aluminum trichloride (AlCl3), dimethylaluminum isopropoxide (DMAI), tris(tert-butyl)aluminum (TTBA), tris(isopropoxide)aluminum (TIPA) or triethyl aluminum (TEA). In some embodiments the catalyst is a zirconium compound, such as Zr-DO4. In some embodiments the catalyst is tetrakis(ethylmethylamino)zirconium (TEMAZ). In some embodiments the catalyst is ZrCl4. In some embodiments the catalyst is a lanthanum compound, such as tris(isopropyl-cyclopentadienyl)lanthanum (LA(iPrCp)3). In some embodiments the catalyst is a titanium compound, such as titanium isopropoxide (TTIP) or TiCl4. In some embodiments the catalyst is a gallium compound, such as trimethylgallium (TMG). In some embodiments the catalyst is a hafnium compound, such as HfCl4 or Hf(NO3)4. In some embodiments, the catalyst may be a compound comprising Boron.
In some embodiments the catalyst may preferentially deposit on the dielectric surface, for example a functionalized dielectric surface, relative to a passivated metal surface. In some embodiments the catalyst preferentially deposits on a dielectric surface relative to a passivated metal surface. In some embodiments the passivation agent on the metal surface inhibits or prevents deposition of catalyst on the metal surface. In some embodiments a single exposure to the passivation agent may prevent deposition of catalyst on the metal surface for 1, 2, 5, 10, 20, 30, 40 or 50 or more cycles in which the substrate is contacted with the catalyst. In some embodiments the metal surface is not passivated and the catalyst selectively deposits on the dielectric surface in the absence of a passivating material on the metal surface. For example, the catalyst may selectively deposit on a functionalized dielectric surface relative to a metal surface. In some embodiments a catalyst is not utilized.
After deposition of the catalyst on the dielectric surface, if utilized, a silicon oxide layer is selectively deposited on the catalyzed dielectric surface relative to the passivated metal surface. For example, the substrate may be exposed to a silicon precursor, such as a silanol. In some embodiments the substrate is exposed to the silicon precursor alone, while in some embodiments the substrate is exposed to the silicon precursor and an oxygen precursor, such as H2O. The silicon precursor may react with the surface comprising the catalyst to form silicon oxide. For example, the substrate may be contacted with a silicon reactant comprising a silanol such that the silanol decomposes at the catalyst atoms on the dielectric surface, resulting in the selective growth of silicon oxide on the dielectric surface relative to the metal surface.
In some embodiments the substrate is alternately and sequentially contacted with the dielectric passivation agent, the metal passivation agent, the catalyst and the silanol reactant in one or more deposition cycles. This deposition cycle may be repeated multiple times to selectively deposit a silicon oxide film of a desired thickness on the dielectric surface relative to the metal surface.
With reference to
Next, the metal surface is passivated 120 by exposure to one or more second passivation agents, leading to selective formation of a polymer layer on the metal surface. In some embodiments a self-assembled monolayer (SAM) is selectively formed on the metal layer, for example from a vapor-phase dodecanethiol precursor. In some embodiments a polyimide layer is selectively deposited on the metal surface. In some embodiments the metal surface is only passivated 120 in one deposition cycle 100, for example only in the first deposition cycle 100.
A silicon oxide deposition sub-cycle 130 is carried out in which the substrate is contacted with the catalyst 140 and a silicon precursor 140, such as a silanol. As mentioned above, in some embodiments the substrate is contacted with an oxygen reactant such as H2O in addition to the silicon reactant. Excess catalyst and silanol may be removed from the substrate surface after each contacting step 140 and 150. The sub-cycle may be repeated 160 multiple times in a single deposition cycle 100. In some embodiments one, two, three, or more silicon oxide deposition sub-cycles in which the substrate is alternately and sequentially contacted with the catalyst 140 and the silanol reactant 150 are carried out in each deposition cycle 100. That is, for each time that the substrate is contacted with the first passivation agent 110 and/or the metal surface is passivated 120, multiple silicon oxide deposition sub-cycles 130 may be carried out. In some embodiments the silicon oxide deposition sub-cycle 130 is repeated up to fifty times prior to commencing another deposition cycle 100 by contacting the substrate with the first passivation agent.
In some embodiments the polymer passivation layer on the metal surface is removed 170 prior to beginning a new deposition cycle 100. The polymer passivation layer may be removed, for example, by etching, such as by plasma etching. In some embodiments the polymer passivation layer is not removed in every deposition cycle 100 but is only removed in one or more deposition cycles, such as in the last deposition cycle.
The deposition cycle 100 may be repeated until a silicon oxide film of a desired thickness has been selectively formed on the metal surface.
In some embodiments the dielectric surface on which the silicon oxide is selectively deposited is at least partially adjacent to the metal or metallic surface that is selectively passivated. For example, at least one portion of a dielectric surface may be adjacent to a metal or metal oxide surface.
In some embodiments, as discussed above prior to forming the polymer passivation layer on the metal surface, such as a copper surface, the dielectric surface can be provided with a passivation layer, such as by exposure to a silylating agent. The passivation layer on the dielectric surface may facilitate selectivity for the subsequent passivation of the metal surface by a polymer. In addition, the passivation layer on the dielectric can serve to functionalize the surface such that the catalyst is able to chemisorb on the dielectric surface. In some embodiments the passivation layer on the dielectric surface can be activated, such as by exposure to a plasma reactant, for example H2 plasma. In some embodiments the activation step may be carried out after selective passivation of the metal layer.
Examples of suitable reactors that may be used in the selective deposition processes described herein include commercially available atomic layer deposition (ALD) equipment. In addition to ALD reactors, many other kinds of reactors capable of growth of polymer passivation layers, including chemical vapor deposition (CVD) reactors, vapor deposition polymerization (VDP) reactors, and molecular layer deposition (MLD) reactors, can be employed.
Substrate Surfaces
According to some aspects of the present disclosure, selective deposition can be used to deposit films of interest, such as silicon oxide films, on a dielectric surface preferentially relative to a metal or metallic surface. Such a substrate is illustrated schematically in
In some embodiments selective passivation of the dielectric surface, such as selective silylation of the oxide surface, relative to the metal or metallic surface, followed by selective passivation of the metal or metallic surface such as by formation of a polymer layer, can facilitate subsequent selective deposition of a metal catalyst on the dielectric surface followed by selective deposition of a silicon oxide layer on the dielectric surface relative to the passivated metal surface. The polymer passivation layer may be subsequently removed from the metal layer.
In some embodiments, one of the surfaces can be a conductive metal or metallic surface of a substrate, while the other dielectric surface can be a non-conductive oxide surface of the substrate. In some embodiments, the non-conductive dielectric surface comprises —OH groups, such as a silicon oxide-based surface (e.g., low-k materials, including grown and deposited silicon-oxide materials and native oxide over silicon). The dielectric surface can be selectively passivated relative to the metal or metallic surface, such as by exposure to a silylating agent. The surface can subsequently be activated, if necessary, to facilitate selective chemisorption of a metal catalyst on the dielectric layer and subsequently silicon oxide can be selectively deposited on the dielectric surface relative to the metal surface.
The material differences between the two substrate surfaces are such that vapor deposition methods can selectively passivate the oxide surface relative to the metal or metallic surface to activate it for catalyzed silicon oxide deposition and also passivate the metal or metal surface to discourage or prevent silicon oxide formation thereon.
In some embodiments, cyclical vapor deposition is used, for example, cyclical CVD or atomic layer deposition (ALD) processes.
In some embodiments, selectivity for the passivation layer on the dielectric surface, such as by silylation, can be achieved without prior passivation agents on the metal or metallic surface, and/or without catalytic agents on the surface of the dielectric layer to receive more of the passivation layer. For example, in embodiments where a first surface is an oxide and a second surface is a metal, the oxide layer can be selectively silylated relative to the metal or metallic surface without pretreatment of the oxide surface or pretreatment of the metal or metallic surface.
In some embodiments, the metal or metallic surface is selectively passivated to inhibit silicon oxide deposition on that surface. For example, a polymer layer can be formed over a metal or metallic surface relative to a dielectric surface, facilitating subsequent selective deposition of silicon oxide on the dielectric surface relative to the polymer-covered metallic surface. In some embodiments the polymer layer can be a self-assembled monolayer (SAM). In some embodiments the polymer layer can be a polyimide layer. After selective deposition of the polymer passivation layer is completed, selective deposition of materials of interest, such as the catalyst and/or the silicon oxide, can be conducted on the dielectric surface relative to the passivated metal surface. The passivation layer can be removed after selective deposition of the silicon oxide on the dielectric surface.
As used herein, unless otherwise specified, if a surface is referred to as a metal surface herein, it may be a metal surface or a metallic surface. In some embodiments, the metal or metallic surface may comprise surface oxidation. In some embodiments, the material of the metal surface is electrically conductive with or without surface oxidation. In some embodiments, a metal surface comprises one or more transition metals. In some embodiments, a metal surface comprises one or more of Al, Cu, Co, Ni, W, Nb, Fe, or Mo. In some embodiments a metal surface comprises Cu. In some embodiments a metal surface is a copper surface. In some embodiments, a metallic surface comprises titanium nitride. In some embodiments, the metal surface comprises one or more noble metals, such as Ru. In some embodiments, the metal surface comprises a metal oxide, such as a conductive metal oxide, metal nitride, metal carbide, metal boride, or combination thereof. For example, the metal or metallic surface may comprise one or more of RuOx, NbCx, NbBx, NiOx, CoOx, NbOx, MoOx, WOx, WNCx, TaN, or TiN.
Selective Deposition of a Passivation Layer on a Dielectric Surface Relative to a Metal Surface
In some embodiments the oxide (or other dielectric) surface may be passivated such as by silylation. In some embodiments, the passivation is selective for the oxide surface relative to another surface, such as a metal or metallic surface on the same substrate (see, e.g.,
In some embodiments the treatment of dielectric layer is a dielectric restoration step. Different kinds of silicon containing material restoration steps can be performed before the selective deposition of the polymer passivation layer on the metal surface and before deposition of silicon oxide on the dielectric surface, and after the surface has been cleaned (if carried out).
In some embodiments the oxide surface is silylated by exposure to a vapor phase silylating agent one or more times. For example, in a passivation step a silylating agent may be conducted in the reaction space and contacted with the substrate surface. The silylating agent may be, for example, a chlorosilane, alkoxysilane, silylhalide, silylcyanate, silylazide, silylisocyanate, silylisothiocyanate, silylsulfonate, silylacetamide, silylcarbodiimide, allysilane, or nitrogen-bearing silane such as a silazane, imidazole or amine. In some embodiments the silylating agent is allyltrimethylsilane (TMS-A), chlorotrimethylsilane (TMS-Cl), N-(trimethylsilyl)imidazole (TMS-Im), octadecyltrichlorosilane (ODTCS), hexamethyldisilazane (HMDS), or N-(trimethylsilyl)dimethylamine (TMSDMA) and silylation comprises exposing the substrate to one or more pulses of the silylating agent. In some embodiments both the metal or metallic surface and the oxide surface are contacted with the silylating agent, such as allyltrimethylsilane (TMS-A), chlorotrimethylsilane (TMS-Cl), N-(trimethylsilyl)imidazole (TMS-Im), octadecyltrichlorosilane (ODTCS), hexamethyldisilazane (HMDS), or N-(trimethylsilyl)dimethylamine (TMSDMA). In some embodiments the oxide surface of a substrate is selectively silylated relative to a metal or metallic surface of the substrate.
In some embodiments the silylating agent is an alkylaminosilane. For example, the oxide surface of the substrate may be contacted with an alkylaminosilane having the formula (RI)3Si(NRIIRIII), wherein RI is a linear or branched C1-C5 alkyl group or a linear or branched C1-C4 alkyl group, RII is a linear or branched C1-C5 alkyl group, a linear or branched C1-C4 alkyl group, or hydrogen, and RIII is a linear or branched C1-C5 alkyl group or a linear or branched C1-C4 alkyl group. In some embodiments the silylating agent is trimethyl(dimethylamino)silane, trimethyl(diethylamino)silane or trimethyl(ethylaminosilane).
In some embodiments the silylating agent is a silane. For example, the dielectric surface may be contacted with a silane having the general formula (RI)3SiA, wherein RI is a linear or branched C1-C5 alkyl group or a linear or branched C1-C4 alkyl group, and A is any ligand which is reactive with a silicon containing surface. In some embodiments the silane bonds to the surface through ligand A, or ligand A forms a bond to the surface but then ligand A may migrate away from the surface and/or silane.
The silylating agent may be provided to the reaction chamber holding the substrate in a single pulse or in a sequence of multiple pulses. In some embodiments the silylating agent is provided in a single long pulse or in multiple shorter pulses. The pulses may be provided sequentially. In some embodiments the silylating agent is provided in 1 to 25 pulses of from about 0.1 to about 60 seconds. In some embodiments the silylating agent is provided in a single pulse of about 0.1 to about 60 seconds, about 1 to 30 seconds or about 25 seconds. In between pulses, the silylating agent may be removed from the reaction space. For example, the reaction chamber may be evacuated and/or purged with an inert gas. The purge may be, for example for about 1 to 30 seconds or more. Purging the reaction chamber means that vapor phase passivation agent and/or vapor phase byproducts, if any, are removed from the reaction chamber such as by, evacuating the chamber with a vacuum pump and/or by replacing the gas inside the reactor with an inert gas such as argon or nitrogen. In some embodiments the substrate is moved from a reaction space comprising the passivation agent.
In some embodiments silylation is accomplished through the reaction of a silicon compound, for instance Cl—Si(CH3)3, with an Si—OH terminated surface of a silicon containing dielectric surface: Si-OH+Cl-Si(CH3)3→Si—O—Si(CH3)3+HCl. Thus, in some embodiments an appropriate surface termination is formed prior to providing the silicon compound. Also the use of silicon compounds with longer carbon containing ligands is possible
In some embodiments a silicon containing surface is treated by contacting the silicon containing surface with one or more silanes, such as silane, disilane or trisilane. In some embodiments the silane has the chemical formula SinH2n+2 (n is an integer equal to or greater than 1), or the cyclic silane family and having the chemical formula SinH2n (n is an integer equal to or greater than 3). In some embodiments the silane is disilane Si2H6 or trisilane Si3H8. In some embodiments the silane has the formula: SiHxLy, where L is a ligand selected from the groups including: alkyl, alkenyl, alkynyl, alkoxide, and amine. In some cases, L is a ligand selected from the halide group: F, Cl, Br and I.
In some embodiments the silicon containing surface is treated with trimethylchlorosilane (CH3)3SiCl (TMCS) or with other type of alkylhalosilanes having formula R3-xSiXx, wherein x is an integer from 1 to 3 and each R can independently be selected to be C1-C5 hydrocarbon, such as methyl, ethyl, propyl or butyl, preferably methyl, and X is halide, preferably chloride. U.S. Pat. No. 6,391,785 discloses various surface modifications and treatments and is incorporated herein in its entirety. In some embodiments any of the surface modifications or treatments disclosed in U.S. Pat. No. 6,391,785 can be used in the methods disclosed herein.
In some embodiments, the temperature of the silylation process may be, for example, from about 50° C. to about 500° C., or about 100° C. to about 300° C.
The pressure during the silylation process may be, for example, from about 10−5 to about 760 Torr, or in some embodiments from about 1 to about 10 Torr or about 0.1 to about 10 Torr.
In some embodiments the silylated surface is subsequently exposed to a plasma to activate the surface for subsequent chemisorption of the catalyst. In some embodiments the plasma is H2 plasma. The plasma treatment may be carried out prior to or after the formation of a polymer passivation layer on the metal surface.
In some embodiments, the silylation process and/or plasma treatment may be carried out in situ, that is in the same reaction chamber as other parts of the deposition process, for example selective deposition of an aluminum catalyst on the dielectric surface relative to the metal surface and/or the subsequent selective deposition of silicon oxide on the dielectric surface relative to the metal surface. However, in some embodiments the silylation and/or plasma treatment may be carried out in a separate reaction chamber from one or more other processing steps. In some embodiments the reaction chamber in which the silylation is carried out is part of a cluster tool, including one or more additional reaction chambers. For example, such a cluster tool may include additional reaction chambers for the plasma treatment of the silylated dielectric surface, for formation of a polymer passivation layer on the metal surface, for the deposition of the aluminum catalyst on the dielectric surface, for the deposition of silicon oxide on the dielectric surface, and/or for etching one or more layers. In some embodiments a cluster tool includes separate modules for pretreatment, silylation of the dielectric surface, formation of a polymer passivation layer on the metal surface, selective deposition of aluminum catalyst, selective deposition of silicon oxide and subsequent post-deposition treatment, such as etching to remove the polymer passivation layer from the metal surface. In some embodiments the same module can be used for two or more processes.
In some embodiments, the substrate may be pretreated or cleaned prior to or at the beginning of the deposition process or prior to or after one or more of the steps in the selective deposition processes. In some embodiments, the substrate may be subjected to a plasma cleaning process prior to or at the beginning of the deposition process. In some embodiments, a plasma cleaning process may not include ion bombardment, or may include relatively small amounts of ion bombardment. In some embodiments the substrate surfaces may be exposed to plasma, radicals, excited species, and/or atomic species prior to or at the beginning of the passivation process, and/or the selective metal oxide deposition process. In some embodiments, the substrate surface may be exposed to hydrogen plasma, radicals, or atomic species prior to or at the beginning of the deposition process.
In some embodiments the dielectric surface is not passivated prior to selectively depositing the catalyst on the dielectric surface relative to the metal surface.
Selective Deposition of a Polymer Passivation Layer on the Metal Surface Relative to the Dielectric Surface
A polymer passivation layer can facilitate selective formation of silicon oxide on a dielectric surface relative to a metal surface comprising the polymer passivation layer. In some embodiments the polymer passivation layer may comprise, for example, a self-assembled monolayer (SAM), a polyimide layer or a different polymer, such as a polyester or polyamide like nylon. The polymer passivation layer can serve to inhibit chemisorption of the catalyst and subsequent silicon oxide deposition on a metal or metallic surface, thus facilitating selective deposition of silicon oxide on dielectric surfaces. The term “passivation” is a label and need not imply 100% deactivation of the silicon oxide layer deposition on the metal surface. As noted elsewhere herein, even imperfect selectivity can suffice to obtain a fully selective structure after an etch back process.
In some embodiments, the selectively deposited polymer is a polyimide. In some embodiments, the polymer deposited is a polyamide. Other examples of deposited polymers include dimers, trimers, polyurea layers, polythiophene polyurethanes, polythioureas, polyesters, polyimines, other polymeric forms or mixtures of the above materials. Vapor deposited organic materials include polyamic acid, which may be a precursor to polymer formation. The selectively deposited layer can be a mixture including polymer and polyamic acid, which for purposes of the present disclosure will be considered to be a polymer.
A polymer passivation layer can be selectively deposited on a metal or metallic surface of a substrate relative to the dielectric surface of the substrate, as illustrated in
The polymer passivation layer may be deposited by a variety of methods, including vapor deposition methods such as chemical vapor deposition (CVD), atomic layer deposition (ALD) and molecular layer deposition (MLD) and liquid phase deposition methods. Some exemplary methods for selectively depositing polymer layers are disclosed in Atomic Layer Deposition of Polyimide Thin Films (Putkonen et al. J. Mater. Chem. 2007. 17:664-669) and Organic and Inorganic-Organic Thin Film Structures by Molecular Layer Deposition: A Review (Sundberg and Karppinen. Beilstein J. Nanotechnol. 2014. 5:1104-1136), the entire disclosures of which are incorporated herein by reference in their entirety for all purposes. Further information and examples of selective deposition of polymer layers to serve as the polymer passivation layer are provided below.
Various reactants can be used to form a polymer passivation layer by vapor deposition, such as by ALD or CVD.
In some embodiments the substrate is contacted with a first reactant and a second reactant. In some embodiments the reactants are provided sequentially. However, in some embodiments the substrate may be contacted with the second reactant prior to being contacted with the first reactant.
In some embodiments, the reactants do not contain metal atoms. In some embodiments, the reactants do not contain semimetal atoms. In some embodiments, one of the reactants comprises metal or semimetal atoms. In some embodiments, the reactants contain carbon and hydrogen and one or more of the following elements: N, O, S, P or a halide, such as Cl or F. In some embodiments, the first reactant may comprise, for example, adipoyl chloride (AC).
Deposition conditions can differ depending upon the selected reactants and can be optimized upon selection. In some embodiments, the reaction temperature can be selected from the range of about 80° C. to about 250° C. In some embodiments, the reaction chamber pressure may be from about 1 mTorr to about 1000 Torr. In some embodiments, for example where the selectively deposited organic layer comprises polyamide, the reaction temperature can be selected from a range of about 80° C. to about 150° C. In some embodiments where the selectively deposited organic layer comprises polyamide, the reaction temperature may be greater than about 80° C., 90° C., 100° C., 110° C., 120° C., 130° C., 140° C., or 150° C. In some embodiments where the selectively deposited organic layer comprises polyimide, the reaction temperature may be greater than about 160° C., 180° C., 190° C., 200° C., or 210° C.
For example, for sequential deposition of polyimide, in some embodiments substrate temperatures can be selected from the range of about 150° C. to about 250° C., or from about 170° C. to about 210° C., and pressures can be selected from the range of about 1 mTorr to about 760 Torr, more particularly between about 100 mTorr to about 100 Torr.
In some embodiments, reactants for use in the polymer passivation layer selective deposition processes described herein may have the general formula:
R1(NH2)2 (1)
wherein R1 may be an aliphatic carbon chain comprising 1-5 carbon atoms, 2-5 carbon atoms, 2-4 carbon atoms, 5 or fewer carbon atoms, 4 or fewer carbon atoms, 3 or fewer carbon atoms, or 2 carbon atoms. In some embodiments, the bonds between carbon atoms in the reactant or precursor may be single bonds, double bonds, triple bonds, or some combination thereof. Thus, in some embodiments a reactant may comprise two amino groups. In some embodiments, the amino groups of a reactant may occupy one or both terminal positions on an aliphatic carbon chain. However, in some embodiments the amino groups of a reactant may not occupy either terminal position on an aliphatic carbon chain. In some embodiments, a reactant may comprise a diamine. In some embodiments, a reactant may comprise an organic precursor selected from the group of 1,2-diaminoethane (l), 1,3-diaminopropane (l), 1,4-diaminobutane(l), 1,5-diaminopentane (l), 1,2-diaminopropane (l), 2,3-butanediamine, 2,2-dimethyl-1,3-propanediamine (l).
In some embodiments, reactants for use in the selective deposition processes described herein may have the general formula:
R2(COCl)2 (2)
wherein R2 may be an aliphatic carbon chain comprising 1-3 carbon atoms, 2-3 carbon atoms, or 3 or fewer carbon atoms. In some embodiments, the bonds between carbon atoms in the reactant or precursor may be single bonds, double bonds, triple bonds, or some combination thereof. In some embodiments, a reactant may comprise a chloride. In some embodiments, a reactant may comprise a diacyl chloride. In some embodiments, a reactant may comprise an organic precursor selected from the group of oxalyl chloride (I), malonyl chloride, and fumaryl chloride.
In some embodiments, a reactant comprises an organic precursor selected from the group of 1,4-diisocyanatobutane or 1,4-diisocyanatobenzene. In some embodiments, a reactant comprises an organic precursor selected from the group of terephthaloyl dichloride, alkyldioyl dichlorides, such as hexanedioyl dichloride, octanedioyl dichloride, nonanedioyl dichloride, decanedioyl dichloride, or terephthaloyl dichloride. In some embodiments, a reactant comprises an organic precursor selected from the group of 1,4-diisothiocyanatobenzene or terephthalaldehyde. In some embodiments, a reactant being vaporized can also be a diamine, such as 1,4-diaminobenzene, decane-1,10-diamine, 4-nitrobenzene-1,3-diamine, 4,4′-oxydianiline, or ethylene diamine. In some embodiments, a reactant can be a terephthalic acid bis(2-hydroxyethyl) ester. In some embodiments, a reactant can be a carboxylic acid, for example alkyl-, alkenyl-, alkadienyl-dicarboxylic or tricarboxylic acid, such as ethanedioic acid, propanedioic acid, butanedioic acid, pentanedioic acid or propane-1,2,3-tricarboxylic acid. In some embodiments, a reactant can be an aromatic carboxylic or dicarboxylic acid, such as benzoic acid, benzene-1,2-dicarboxylic acid, benzene-1,4-dicarboxylic acid or benzene-1,3-dicarboxylic acid. In some embodiments, a reactant may comprise one or more OH-groups bonded to a hydrocarbon. In some embodiments, a reactant can be selected from the group of diols, triols, aminophenols such as 4-aminophenol, benzene-1,4-diol or benzene-1,3,5-triol. In some embodiments, a reactant can be 8-quinolinol. In some embodiments, the reactant can comprise alkenylchlorosilanes, like alkenyltrichlorosilanes, such as 7-octenyltrichlorosilane.
In some embodiments, a reactant may have a vapor pressure greater than about 0.5 Torr, 0.1 Torr, 0.2 Torr, 0.5 Torr, 1 Torr or greater at a temperature of about 20° C. or room temperature. In some embodiments, a reactant may have a boiling point less than about 400° C., less than about 300° C., less than about 250° C., less than about 200° C., less than about 175° C., less than about 150° C., or less than about 100° C.
In some embodiments, the polymer passivation layer on the metal surface comprises a self-assembled monolayer (SAM). For example, a SAM can be selectively formed over the metal surface without forming on the dielectric surface. In some embodiments the SAM is a thiol, or sulfur-containing SAM. In some embodiments, the metal surface may be pretreated with acid treatments prior to SAM formation.
In some embodiments a SAM passivation layer may be selectively formed on the metal surface by contacting the substrate with a sulfur-containing monomer, such as 1-dodecanethiol (CH3(CH2)11SH), which can be referred to as a thiol SAM precursor or monomer, or with another SAM monomer such as trichloro(octadecyl)silane.
As noted above, any material deposited on the dielectric surface can be removed by an etch back process. In some embodiments, an etch process subsequent to selective deposition of the silicon oxide may remove deposited organic material from both the first surface and the second surface of the substrate. In some embodiments the etch process may be isotropic.
In some embodiments, the etch process may remove the same amount, or thickness, of material from the metal and dielectric surfaces. That is, in some embodiments the etch rate of the organic material deposited on the first surface may be substantially similar to the etch rate of the organic material deposited on the second surface. Due to the selective nature of the deposition processes, the amount of organic material deposited on the dielectric surface of the substrate may be substantially less than the amount of material deposited on the metal surface of the substrate. Therefore, an etch process may completely remove deposited organic material from the dielectric surface of the substrate while deposited organic material may remain on the metal surface of the substrate.
In some embodiments polymer passivation of the metal surface is not necessary and the catalyst is selectively deposited on the dielectric surface relative to the metal surface, where the metal surface has not been passivated.
Selective Deposition of a Catalyst on Dielectric Surfaces Relative to Metal Surfaces
A catalyst for the subsequent deposition of silicon oxide can be selectively deposited on the dielectric surface of a substrate relative to the metal surface of the substrate. This surface comprising the catalyst may be referred to as the catalyzed dielectric surface. In some embodiments passivation of the dielectric surface is not necessary and the catalyst is selectively deposited on the dielectric surface relative to the metal surface, where the dielectric surface has not been passivated. In some embodiments passivation of the metal surface is not necessary and the catalyst is selectively deposited on the dielectric surface relative to the metal surface, where the metal surface has not been passivated. However, in some embodiments the selective deposition of the catalyst is facilitated or improved by the passivation of the dielectric surface as described above and/or the passivation of the metal surface as described above. Thus, in some embodiments, the catalyst is selectively deposited on a passivated dielectric surface relative to a passivated metal surface. In some embodiments a catalyst is not utilized. For example, in some embodiments the substrate surface may itself catalyze silicon oxide deposition without the need for a further catalyst.
As shown in
After optionally selectively forming the passivation layers on the dielectric and metal surfaces, in some embodiments a catalyst is selectively deposited on the dielectric surface by contacting the substrate with a catalyst compound. The catalyst forms up to a molecular layer of catalytic sites on the dielectric surface of the substrate. The catalyst compound preferably catalyzes the formation of silicon oxide from a vapor phase silanol reactant. Briefly, the substrate is exposed to silanol, such as TPS, and a silicon oxide film, such as silicon dioxide film, for example SiO2 film is formed over the dielectric surface, as illustrated in
In some embodiments the catalyst is a metal catalyst. The catalyst may be, for example, a metal compound comprising Zn, Mg, Mn, La, Hf, Al, Zr, Ti, Sn, or Ga. In some embodiments the catalyst is a metal halide, organometallic or metalorganic compound. In some embodiments, the catalyst is a compound comprising boron.
In some embodiments the catalyst is an alkylaluminium, alkylboron or alkylzinc compound that is able to react with the hydrophobic surface. For example, the catalyst may comprise trimethyl aluminum (TMA), triethylboron (TEB), or diethyl zinc.
In some embodiments the catalyst comprises a compound having the formula MRxA3-x, wherein x is an integer from 1 to 3, R is a C1-C5 alkyl ligand, M is B, Zn, Mg, Mn, La, Hf, Al, Zr, Ti, Sn, or Ga and A is a halide, alkylamine, amino, silyl or derivative thereof. In some embodiments the R is a C1-C3 alkyl ligand. In some embodiment the R is a methyl or ethyl group. In some embodiments the M is boron. In some embodiments the catalyst is ZnRxA2-x, wherein x is an integer from 1 to 2, R is a C1-C5 alkyl ligand, and A is a halide, alkylamine, amino, silyl or derivative thereof. In some such embodiments the R is a C1-C3 alkyl ligand. In some embodiment the R is a methyl or ethyl group.
In some embodiments the catalyst is an aluminum catalyst. Examples of Al compounds that can be used include trimethyl aluminum (TMA), dimethylaluminumchloride, aluminum trichloride (AlCl3), dimethylaluminum isopropoxide (DMAI), tris(tert-butyl)aluminum (TTBA), tris(isopropoxide)aluminum (TIPA) or triethyl aluminum (TEA). In some embodiments the aluminum catalyst comprises is a heteroleptic aluminum compound. In some embodiments the heteroleptic aluminum compound comprises an alkyl group and another ligand, such as a halide, for example Cl. In some embodiments the aluminum catalyst comprises dimethylaluminumchloride. In some embodiments the aluminum catalyst comprises an alkyl precursor comprising two different alkyl groups as ligands. In some embodiments the aluminum compound is an aluminum isopropoxide. In some embodiments the aluminum catalyst comprises a metalorganic compound. In some embodiments the aluminum catalyst comprises an organometallic compound. In some embodiments the aluminum catalyst is an aluminum compound such as trimethyl aluminum (TMA), dimethylaluminumchloride, aluminum trichloride (AlCl3), dimethylaluminum isopropoxide (DMAI), tris(tertbutyl)aluminum (TTBA), tris(isopropoxide)aluminum (TIPA) or triethyl aluminum (TEA).
In some embodiments the catalyst is a zirconium compound, such as Zr-DO4. In some embodiments the catalyst is tetrakis(ethylmethylamino)zirconium (TEMAZ). In some embodiments the catalyst is ZrCl4.
In some embodiments the catalyst is a lanthanum compound, such as tris(isopropyl-cyclopentadienyl)lanthanum (LA(iPrCp)3).
In some embodiments the catalyst is a titanium compound, such as titanium isopropoxide (TTIP) or TiCl4.
In some embodiments the catalyst is a gallium compound, such as trimethylgallium (TMG).
In some embodiments the catalyst is a hafnium compound, such as HfCl4 or Hf(NO3)4.
The catalyst may be provided to the reaction chamber holding the substrate in a single pulse or in a sequence of multiple pulses. In some embodiments the catalyst is provided in a single long pulse or in multiple shorter pulses. The pulses may be provided sequentially. In some embodiments the catalyst is provided in 1 to 25 pulses of from about 0.1 to about 60 seconds. In some embodiments the catalyst is provided in a single pulse of about 0.1 to about 60 seconds, about 1 to 30 seconds or about 25 seconds. In between pulses, excess catalyst may be removed from the reaction space. For example, the reaction chamber may be evacuated and/or purged with an inert gas. The purge may be, for example for about 1 to 30 seconds or more. Purging means that vapor phase catalyst and/or vapor phase byproducts, if any, are removed from the reaction chamber such as by evacuating the chamber with a vacuum pump and/or by replacing the gas inside the reaction chamber with an inert gas. In some embodiments vapor phase catalyst is removed from the substrate surface by moving the substrate from the reaction space comprising the vapor phase catalyst.
In some embodiments, the temperature of the selective catalyst deposition may be, for example, from about 50° C. to about 500° C., or about 100° C. to about 300° C. In some embodiments, the deposition temperature is between about 50° C. and about 400° C. In some embodiments the deposition temperature is greater than about 100° C. and the catalytic chemical is an alkylaluminum compound, such as TMA. In some embodiments, the alkylaluminum compound is dimethylaluminum isopropoxide (DMAI), and the deposition temperature is from about 100° C. to about 400° C., from about 100 to about 200, from about about 200° C. to about 400° C., or from about 250° C. to about 350° C. In some embodiments, the alkylaluminum compound is dimethylaluminum isopropoxide (DMAI), and the deposition temperature is about 150° C. In some embodiments, the alkylaluminum compound is dimethylaluminum isopropoxide (DMAI), and the deposition temperature is about 300° C. In some embodiments the catalytic chemical is an alkylboron compound, such as TEB, and the deposition temperature is between about 50° C. and about 400° C., between about 100° C. and about 350° C., or between about 100° C. and about 300° C. In some embodiments the catalytic chemical is an alkylboron compound and the temperature is greater than about 100° C. In some embodiments the deposition temperature is greater than about 300° C. and the catalytic chemical is TEB. The temperature of the selective catalyst deposition may be selected according to the passivation layer used to allow the use of single deposition temperature.
In some embodiments the catalyst comprises a metal compound that is selectively deposited by contacting the substrate with a metal precursor and an oxygen reactant. In some embodiments the catalyst comprises a metal oxide. In some embodiments the metal compound is selectively deposited by an ALD process. In some embodiments the substrate is simultaneously or sequentially contacted with a first metal precursor and a second reactant comprising oxygen in one, two or more deposition cycles. In some embodiments the deposition process comprises a plurality of deposition cycles in which the substrate is alternately and sequentially contacted with the first metal precursor and the second reactant.
In some embodiments the first metal precursor is a hydrophobic Lewis acid. The hydrophobic metal reactant may comprise at least one hydrophobic hydrocarbon ligand, such as alkyl, alkenyl, cyclic C3-C8 or aromatic groups. In some embodiments the first metal precursor may be bis(methylcyclopentadienyl)methoxymethyl zirconium.
In some embodiments the first metal precursor comprises a transition metal. In some embodiments the first precursor does not comprise a noble metal, such as Ru.
In some embodiments the first metal precursor may comprise at least one alkyl ligand, such as a C1-C4 alkyl ligand. In some embodiments the first metal precursor may comprise an organometallic or metalorganic compound. In some embodiments the first metal precursor may comprise at least one cyclopentadienyl (Cp) ligand. In some embodiments the first metal precursor may comprise a formamidinate or an amidinate compound. In some embodiments the first metal precursor may comprise a beta-diketonate compound. In some embodiments the first metal precursor may comprise an alkylamino compound, such as a dialkylamino compound. In some embodiments the first metal precursor may comprise an alkylamino ligand, such as —NMe2, —NEt2 or —NEtMe.
In some embodiments the first metal precursor may comprise magnesium. In some embodiments the first metal precursor may be an organometallic or a metalorganic compound comprising magnesium. For example, in some embodiments the first metal precursor may comprise Mg(Cp)2 or a derivative thereof.
In some embodiments the first metal precursor may comprise lanthanum. In some embodiments the first metal precursor may be an organometallic compound comprising lanthanum. In some embodiments the first metal precursor may comprise lanthanum formamidinate (La(FAMD)3).
In some embodiments the first metal precursor may comprise hafnium. In some embodiments the first metal precursor may comprise an organometallic compound comprising hafnium. For example, in some embodiments the first metal precursor may comprise alkylamino hafnium compound, such as Tetrakis(ethylmethylamino)hafnium (TEMAH, Hf(NEtMe)4) or a derivative thereof.
In some embodiments, the first metal precursor has the following formula:
MgL2 (I)
wherein Mg is magnesium, and wherein each L can be independently selected to be a hydrocarbon group. In some embodiments each L can be linear, branched, cyclic alkyl or unsaturated hydrocarbon group, such as alkenyl, alkynyl, aromatic, cyclopentadienyl, phenyl, cyclooctadienyl, or cycloheptatrienyl group. In some embodiments one or both L can be a cyclopentadienyl group. In some embodiments, one or both L can be a bidentate ligand, such as beta-diketonate, guanidinate or amidinate. In some embodiments, the beta-diketonate ligand can be acetylacetonate or 2,2,6,6-tetramethyl-3,5-heptanedionato (THD).
In some embodiments, the first metal precursor is a cyclopentadienyl compound or derivate thereof, such as alkyl-substituted cyclopentadienyl compound and have the following formula:
Mg(R1R2R3R4R5Cp)2 (II)
wherein each of the R1 groups, each of the R2 groups, each of the R3 groups, each of the R4 groups, and each of the R5 groups can be independently selected to be hydrogen or a substituted or unsubstituted alkyl group. In some embodiments each of the R1 groups, each of the R2 groups, each of the R3 groups, each of the R4 groups, and each of the R5 groups can be independently selected to be hydrogen or a linear or branched C1-C5 alkyl group. In some embodiments each of the R1 groups, each of the R2 groups, each of the R3 groups, each of the R4 groups, and each of the R5 groups can be independently selected to be hydrogen or a C1-C3 alkyl group, such as methyl, ethyl, n-propyl or i-propyl group. In some embodiments the first precursor is Mg(Cp)2.
In some embodiments, the first metal precursor comprises one or more ligands, such as cyclopentadienyl (“Cp”) ligands. These first precursor compounds can be selected from a group consisting of the following compounds:
(Cp)xLa (III);
(Cp)xLyLa (IV);
(Cp)xWnLa (V);
(CP)xLyWnLa (VI);
In the chemical equations I-IV, the cyclopentadienyl and/or cyclooctadienyl groups can be in the same molecule, so that there is a bridge between two Cp-groups consisting of a substituted or unsubstituted C1-C6 chain that may contain a heteroatom selected from Si, N, P, Se, S or B.
In some embodiments L is an independently selected:
In some embodiments L is and independently selected:
Cyclopentadienyl or cyclooctadienyl groups, Cp in chemical formulas I-IV have the form:
Cp′RmHa-m (VII)
In some embodiments each R ligand can be the same as each other R ligand, or each R ligand may different from one another. That is, each R ligand can be independently selected. In some embodiments R can be a substituted or unsubstituted, cyclic, linear or branched, alkyl alkenyl, aryl, alkylaryl, arylalkyl, alkoxy, thio, amino, cyano or silyl group. The cyclic or aromatic ring of the substituent may contain a heteroatom. Examples of the substituents are methyl, ethyl, propyl and isopropyl groups.
Neutral adduct ligands L shown in chemical equations II and IV can be independently selected ethers, amines or solvent molecules such as tetrahydrofurane that form a bond to the metal with one atom. Examples of suitable neutral adduct ligands that form a bond to a metal with several atoms are polyethers and polyamines.
In some embodiments a first metal precursor may comprise at least one cyclopentadienyl ligand and can be written according to Formula VIII:
(R1R2R3R4R5Cp)x-MR0z—(R6)y (VIII)
In some embodiments, a first metal precursor comprising a cyclopentadienyl compound comprises at least one ligand that is bonded to a metal via nitrogen as depicted by Formula IX:
(R1R2R3R4R5Cp)x-MR0z—(NR1R2)y (IX)
In Formula IX, the alkyl, alkenyl and alkynyl groups can be selected from any linear or branched alkyl, alkenyl and alkynyl groups which have 1 to 6 carbon atoms. Examples of such alkyl groups include methyl; ethyl; n- and i-propyl-; n-, i- and t-butyl-; n- and isoamyl; n- and isopentyl; n- and isohexyl; and 2,3-dimethyl-2-butyl. In some embodiments, alkyl groups are used. In other embodiments the C1-6, alkenyl and alkynyl groups include the corresponding groups having a corresponding degree of unsaturation can be used.
In some embodiments the first metal precursor is a compound having at least one cyclopentadienyl ligand and at least one chelating ligand, for example, a bidentate ligand. In some embodiments, this compound is depicted by Formula X, (R1R2R3R4R5Cp)x-MR0z—(NR1NR2R)y, as follows:
In some other embodiments, the first metal precursor can be depicted by Formula XI, (R1R2R3R4R5Cp)x-MR0z—[(NR1NR2)CNR3]y, as follows:
In further embodiments, the first metal precursor is depicted by Formula XII, (R1R2R3R4R5Cp)x-MR0z—[(NR1NR2)CNR3R4]y, as follows:
In some embodiments, the first metal precursor as described in Formulae VIII-XII may comprise R0, R1, R2, R3, R4, R5, and R6 wherein each of the R0 groups, each of the R1 groups, each of the R2 groups, each of the R3 groups, each of the R4 groups, and each of the R5 groups, and each of the R6 groups can be independently selected from
Optionally, a first metal precursor as described may comprise modified cyclopentadienyl groups. In some embodiments, the modified cyclopentadienyl groups are selected from the group consisting of Me5Cp, MeCp, EtCp, and Me3SiCp. In further embodiments, the first metal precursor may comprise an anionic or dianionic guanidinate ligand such as a triisopropylguandinate ligand.
In some embodiments the second reactant comprises oxygen and may be referred to herein as the oxygen precursor, oxygen reactant, oxygen-containing precursor, or oxygen-containing reactant. In some embodiments the second reactant comprises molecular oxygen (O2). In some embodiments the second reactant does not comprise a compound comprising oxygen other than O2. In some embodiments the second reactant does not comprise O3 or H2O. In some embodiments the second reactant does not comprise a plasma, for example an oxygen plasma. In some embodiments the second reactant is supplied with or mixed with inert gas such as Na, He or Ar.
In some embodiments the second reactant comprises molecular oxygen and less than about 50%, 25%, 15%, 10%, 5%, 1%, or 0.1% of impurities other than inert gases.
In some embodiments, the selective catalyst deposition process may be carried out in situ, that is in the same reaction chamber as prior passivation and/or a subsequent deposition process, for example the subsequent selective deposition of silicon oxide on the dielectric surface. However, in some embodiments the selective catalyst deposition may be carried out in a separate reaction chamber from one or more subsequent processing steps, for example in one chamber that is part of a cluster tool.
In some embodiments, the substrate may be pretreated or cleaned prior to or at the beginning of the selective catalyst deposition.
Selective Deposition of Silicon Oxide on Catalyzed Dielectric Surfaces Relative to Metal Surfaces
Following passivation of the dielectric and/or metal surfaces (if conducted) and selective deposition of the catalyst (if conducted) on the dielectric surface, silicon oxide can be selectively deposited on the dielectric surface of the substrate relative to the metal surface. In some embodiments, silicon oxide is selectively deposited on the dielectric surface by contacting the substrate with a silicon reactant, such as a silanol (see, e.g.,
One or more silanols can be used as the silicon reactant, such as alkoxysilanols or alkoxysilanediols. In some embodiments the silicon reactant may comprise on or more tris(tert-alkoxy)silanols, di(alkoxy)alkylsilanols, di(alkoxy)silanediols or bis(tert-alkoxy)silanediols. In some embodiments the silanol may be selected from one or more of tris(tert-butoxy)silanol (TBS), tris(isopropoxy)silanol (TIS), and tris(tert-pentoxy)silanol (TPS). Silanols are compounds comprising silicon bound to one or more hydroxyl (OH) groups. In some embodiments, the silanols comprise more than one OH— group bonded directly to the silicon atom. Silanol compounds include, without limitation, alkoxysilanols, alkoxyalkylsilanols, and alkoxysilanediols. In some embodiments, the silicon precursor comprises TPS. In some embodiments the silicon source is di(alkoxy)silanediol.
In some embodiments only a single silanol pulse is provided after the catalyst has been deposited on the dielectric surface. In some embodiments a single silanol pulse is used to deposit a silicon dioxide film with a thickness of more than 5 angstroms, as measured on the top surface of the dielectric surface on the substrate. As discussed above, in some embodiments the substrate can be contacted with the catalyst and the silanol in one or more silicon oxide deposition sub-cycles. The sub-cycles may be repeated until a silicon oxide film of the desired thickness has been selectively formed over the dielectric surface. In some embodiments a single sub-cycle may be all that is required to obtain a silicon dioxide film of a desired thickness. In other embodiments the steps may be repeated 2, 3, 4, 5, 6, 7, 8, 9, 10 or more times.
In some embodiments, more than one silanol pulse is provided in each deposition cycle. For example, a catalyst pulse can be followed by two, three or more silanol pulses. In some embodiments, a catalyst pulse is followed by two silanol pulses. In some embodiments, a single catalyst pulse is followed by at least 10, for example 15 or 20 silanol pulses. Each silanol pulse may be separated by a purge step. In other embodiments, each silanol pulse is provided after a predetermined time delay, without an intervening purge step.
Although generally described as beginning with provision of the catalyst, each silicon oxide deposition sub-cycle can begin with either reactant. However, as will be recognized by the skilled artisan, if the first sub-cycle begins with the silanol reactant, deposition may not begin until the second deposition cycle.
With respect to the catalyst, surface saturation ensures catalyst occupation of all available reactive sites (subject, for example, to physical size or “steric hindrance” restraints) and thus ensures excellent step coverage. However, in some embodiments, the catalyst can be provided in a non-saturating or under-saturating dose. Thus, in some embodiments, the dose of the catalyst is metered in order to provide a predetermined amount of catalyst and a predetermined amount of deposition of silicon dioxide.
With respect to the silanol reactant, in some embodiments a saturating pulse of silanol is provided. However, because the growth rate of silicon dioxide depends, in part, on diffusion of the precursor through the growing film, the growth rate can be controlled, for example by controlling precursor dose, purge time and/or temperature. Thus, in some embodiments a non-saturating dose of silanol can be provided. In some embodiments the dose of the silanol reactant and/or exposure time may be limited to provide silicon dioxide to a particular thickness and/or to a particular depth in a given reaction cycle.
In some embodiments a silicon dioxide thin film is selectively formed on a dielectric surface of a substrate relative to a metal surface by selecting a catalyst that is able to react with the dielectric surface (in view of any treatments it may have received) and carrying out a deposition process comprising one or more silicon dioxide deposition cycles, each silicon dioxide deposition cycle comprising:
In some embodiments a silicon oxide thin film is selectively deposited on one or more dielectric surfaces relative to one or more metal or metallic surfaces, such as a copper, cobalt, titanium nitride or tungsten surfaces.
The thickness of the film can be adjusted depending on the particular circumstances. In some embodiments a silicon dioxide film ranging from a few angstroms to a few nanometers is deposited. In some embodiments a thin film of silicon dioxide of less than about 2 nm is deposited. In some embodiments a thin film of silicon dioxide of less than about 3 nm is deposited. In some embodiments one or both of the catalysts and the silanol are underdosed in order to obtain deposition of a film of less than about 2 nm or less than about 3 nm. The thin film may be deposited in one deposition cycle or in multiple deposition cycles.
Before starting the deposition of the silicon oxide, the substrate is typically heated to a suitable growth temperature. In some embodiments, the growth temperature of the silicon dioxide thin film is less than about 500° C., less than about 400° C., less than about 300° C., less than about 200° C., less than about 150° C. or even less than about 125° C. Temperatures are typically such that the catalyst does not decompose. In some embodiments the deposition process can be performed at temperatures greater than about 100° C., for example with trimethyl aluminum (TMA) as a catalyst.
In some embodiments the pulse time for the reactants may be from about 0.1 to about 10 seconds, and the purge time between reactant pulses may also be from about 0.1 to about 10 seconds. In some embodiments the pulse time for the reactants may be longer than about 10 seconds. In some embodiments the pulse time may be from about 0.1 to about 15 seconds or more, or from about 0.1 to about 20 seconds or more. In some embodiments the pulse time may be from about 10 to about 20 seconds or more. In some embodiments, the purge time between reactant pulses may be longer than about 10 seconds, such as about 15 seconds or about 20 seconds. In some embodiments the purge time may be from about 0.1 to about 15 seconds or more or from about 0.1 to about 20 seconds or more. In some embodiments the purge time may be from about 10 to about 20 seconds or more.
The pressure in the reaction chamber is typically from about 0.1 mTorr to about 5 Torr, more preferably from about 0.1 mTorr to about 3 Torr, and most preferably 0.2 mTorr to about 3 Torr. However, in some cases the pressure will be higher or lower than this range, as can be readily determined by the skilled artisan.
In one embodiment, in a silicon oxide deposition sub-cycle, silicon oxide, such as silicon dioxide, for example SiO2, is deposited on a dielectric surface of a substrate relative to a passivated metal surface at a temperature of about 150° C. Trimethyl aluminum (TMA) is pulsed into the reaction chamber for 150 ms, followed by a 3 s purge. TPS is then pulsed into the reaction chamber for 100 s, followed by a 90 s purge.
Post-Deposition Treatment
Following the selective deposition of the silicon oxide, the substrate may be subjected to a post-deposition cleaning step to remove the polymer passivation layer from the metal surfaces, as mentioned above (See, e.g.,
In some embodiments a thin silicon oxide film is selectively deposited on a dielectric surface of a three-dimensional structure relative to one or more passivated metal surfaces. The three-dimensional structure may comprise, for example, a via or a trench. In some embodiments metal surfaces may be selectively passivated and an aluminum catalyst deposited on dielectric surfaces prior to depositing the silicon oxide film. In some embodiments, the aluminum content in the deposited silicon oxide film is less than about 3 at. %, less than about 2.5 at. %, less than about 1.5 at. % or less than about 1 at. %.
Selectivity
Selective passivation and/or selective deposition can be fully selective or partially selective. A partially selective process can be followed by a post-deposition etch that removes some or all of the deposited material from over one surface without removing all of the deposited material from over a second surface, resulting in a fully selective layer. Thus, in some embodiments the selective deposition need not be fully selective in order to obtain the desired benefits.
Selectivity of deposition (or passivation) on a first surface, here referred to as surface A, relative to a second surface, referred to as surface B, can be given as a percentage calculated by [(deposition on surface A)−(deposition on surface B)]/(deposition on the surface A). Deposition can be measured in any of a variety of ways. For example, deposition may be given as the measured thickness of the deposited material, or may be given as the measured amount of material deposited. In embodiments described herein, one surface (A) can be selectively passivated relative to a second surface (B). With respect to passivation, if the passivation results from treatment of the substrate surface rather than deposition of a layer, the amount of passivation can be a measure of available reactive sites on the substrate surface that have reacted with the passivation agent.
In some embodiments, selectivity for the selective formation of the passivation layer (or silylation) on a dielectric surface (relative to a metal or metallic surface) is greater than about 10%, greater than about 50%, greater than about 75%, greater than about 85%, greater than about 90%, greater than about 93%, greater than about 95%, greater than about 98%, greater than about 99% or even greater than about 99.5%.
In some embodiments, selectivity for the selective formation of the polymer passivation layer on a metal surface (relative to a dielectric surface) is greater than about 10%, greater than about 50%, greater than about 75%, greater than about 85%, greater than about 90%, greater than about 93%, greater than about 95%, greater than about 98%, greater than about 99% or even greater than about 99.5%.
In some embodiments, deposition of the catalyst on a dielectric surface relative to a polymer passivated metal surface is greater than about 10%, greater than about 50%, greater than about 75%, greater than about 85%, greater than about 90%, greater than about 93%, greater than about 95%, greater than about 98%, greater than about 99% or even greater than about 99.5%.
In some embodiments, deposition of the catalyst on a dielectric surface relative to an unpassivated metal surface is greater than about 10%, greater than about 50%, greater than about 75%, greater than about 85%, greater than about 90%, greater than about 93%, greater than about 95%, greater than about 98%, greater than about 99% or even greater than about 99.5%.
In some embodiments, selectivity of deposition of silicon oxide on a catalyzed dielectric surface (relative to a passivated or unpassivated metal surface) is greater than about 10%, greater than about 50%, greater than about 75%, greater than about 85%, greater than about 90%, greater than about 93%, greater than about 95%, greater than about 98%, greater than about 99% or even greater than about 99.5%.
In some embodiments, deposition only occurs on one surface and does not occur on the other surface.
In some embodiments, passivation of a dielectric surface by silylation relative to a metal or metallic surface of the substrate is at least about 80% selective. In some embodiments, the passivation process is at least about 50% selective. In some embodiments the passivation process is at least about 10% selective. The skilled artisan will appreciate that a partially selective process can result in a fully selective passivation of the oxide surface by a post-deposition etch that removes any silylation from the other surface.
In some embodiments, passivation of a metal surface by formation of a polymer layer thereon relative to a dielectric surface of the substrate is at least about 80% selective. In some embodiments, the passivation process is at least about 50% selective. In some embodiments the passivation process is at least about 10% selective. The skilled artisan will appreciate that a partially selective process can result in a fully selective passivation of the metal surface by a post-deposition etch that removes any polymer from the other surface.
In some embodiments, deposition of a catalyst on a dielectric surface relative to a passivated metal surface of the substrate is at least about 80% selective. In some embodiments, the catalyst deposition process is at least about 50% selective. In some embodiments the catalyst deposition process is at least about 10% selective. The skilled artisan will appreciate that a partially selective process can result in a fully selective deposition on the dielectric surface by a post-deposition etch that removes any catalyst from the metal surface.
In some embodiments, deposition of silicon oxide on a catalyzed dielectric surface of the substrate relative to a polymer passivated metal surface of the substrate is at least about 80% selective. In some embodiments, deposition of silicon oxide on a catalyzed dielectric surface of the substrate relative to a polymer passivated metal surface of the substrate is at least about 50% selective. In some embodiments deposition of silicon oxide on a catalyzed dielectric surface of the substrate relative to a polymer passivated metal surface of the substrate is at least about 10% selective. The skilled artisan will appreciate that a partially selective process can be followed by a post-deposition etch (or other treatment) that removes substantially all of the deposited material from over the metal surface. Furthermore, the post-deposition treatment can also aid in tailoring the position and/or profile of the selectively deposited layer.
Selective Deposition of Silicon Oxide on Metal or Metallic Surfaces
As noted above, any silicon oxide deposited on the metal layer, such as on the polymer passivated metal layer, can be removed by a post deposition treatment, such as an etch back process. Because the silicon oxide is deposited selectively on the dielectric surface, any silicon oxide left on the polymer passivation surface will be thinner than the silicon oxide formed on the dielectric surface. Accordingly, the post deposition treatment can be controlled to remove all of the silicon oxide over the metal surface without removing all of the silicon oxide from over the dielectric surface. Repeated selective deposition and etching back in this manner can result in an increasing thickness of the silicon oxide on the dielectric surface with each cycle of deposition and etch. Repeated selective deposition and etching back in this manner can also result in increased overall selectivity of the silicon oxide on the dielectric surface, as each cycle of deposition and etch leaves a clean passivation layer over which the selective silicon oxide deposition nucleates poorly. In other embodiments, silicon oxide over the metal surface may be removed during subsequent removal of the polymer passivation layer.
Additional treatments, such as heat or chemical treatment, can be conducted prior to, after or between the foregoing processes. For example, treatments may modify the surfaces or remove portions of the metal, silicon oxide, passivation and metal oxide surfaces exposed at various stages of the process. In some embodiments the substrate may be pretreated or cleaned prior to or at the beginning of the process. In some embodiments, the substrate may be subjected to a plasma cleaning process, as mentioned above.
Although certain embodiments and examples have been discussed, it will be understood by those skilled in the art that the scope of the claims extend beyond the specifically disclosed embodiments to other alternative embodiments and/or uses and obvious modifications and equivalents thereof.
This application claims priority to U.S. Provisional Application No. 63/002,136, filed on Mar. 30, 2020, which is incorporated by reference herein in its entirety.
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| 10-2004-0056026 | Jun 2004 | KR |
| 10-2005-0103811 | Nov 2005 | KR |
| 10-0920033 | Oct 2009 | KR |
| 10-2010-0093859 | Aug 2010 | KR |
| 10-2020-0120872 | Oct 2020 | KR |
| 10-2197048 | Dec 2020 | KR |
| 2005-39321 | Dec 2005 | TW |
| 2010-05827 | Feb 2010 | TW |
| 2010-27766 | Jul 2010 | TW |
| 2014-39365 | Oct 2014 | TW |
| 1652734 | Mar 2019 | TW |
| WO 2002045167 | Jun 2002 | WO |
| WO 2011156705 | Dec 2011 | WO |
| WO 2013161772 | Oct 2013 | WO |
| WO 2014156782 | Oct 2014 | WO |
| WO 2014209390 | Dec 2014 | WO |
| WO 2015047345 | Apr 2015 | WO |
| WO 2015094305 | Jun 2015 | WO |
| WO 2015147843 | Oct 2015 | WO |
| WO 2015147858 | Oct 2015 | WO |
| WO 2016178978 | Nov 2016 | WO |
| WO 2017184357 | Oct 2017 | WO |
| WO 2017184358 | Oct 2017 | WO |
| WO 2018204709 | Nov 2018 | WO |
| WO 2018213018 | Nov 2018 | WO |
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| Number | Date | Country | |
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| 20210301392 A1 | Sep 2021 | US |
| Number | Date | Country | |
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| 63002136 | Mar 2020 | US |
