Claims
- 1. A semiconductor device having exposed semiconductor regions separated by insulating regions, and a self-aligned metallization to the exposed semiconductor or regions of the device, the metallization comprising:
- a) a first layer of tungsten in contact with the exposed semiconductor regions,
- b) a patterned layer of a material capable of providing nucleation sites for the selective deposition of tungsten overlying predetermined portions of the insulating regions and contacting at least the edge portions of the first tungsten layer abutting these insulating regions, and
- c) a second layer of tungsten directly contacting both the patterned nucleating layer and the exposed portions of the first tungsten layer, the second layer interconnecting the metallization across the predetermined portions of the insulating regions.
- 2. The device of claim 1 in which the nucleating layer pattern overlaps the edge portions of the abutting first tungsten layer.
- 3. The device of claim 1 in which the material providing nucleation sites is amorphous silicon.
- 4. The device of claim 1 in which the thickness of the first and second tungsten layers is at least 100 nm.
- 5. The device of claim 4 in which the thickness of the second tungsten layer is at least 120 nm.
- 6. The device of claim 1 in which the metallization is covered with a thick insulating layer defining at least one contact hole through which an overlying electrical contact material extends to make contact with the underlying metallization.
- 7. The device of claim 1 in which the exposed semiconductor regions include at least source, drain and gate regions.
- 8. The device of claim 7 in which the semiconductor is silicon.
- 9. The device of claim 8 in which the insulating regions are oxide.
Parent Case Info
This is a division of application Ser. No. 090,301, filed Aug. 27, 1987 now Pat. No. 4,822,74.
US Referenced Citations (2)
Foreign Referenced Citations (1)
Number |
Date |
Country |
1330720 |
Sep 1973 |
GBX |
Non-Patent Literature Citations (1)
Entry |
Morosanu and Soltuz, "Kinetics & Properties of Chemically Vapour-Deposited & Tungsten . . . ,"Thin Solid Films, vol. 52, 1978, 181-194. |
Divisions (1)
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Number |
Date |
Country |
Parent |
90301 |
Aug 1987 |
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