The present disclosure relates to the technical field of semiconductor manufacture, and in particular, to a self-calibration apparatus and a self-calibration method for real-time temperature measurement system of a MOCVD device.
A growth temperature of an epitaxial wafer is a key parameter for controlling production performance of MOCVD. Due to strict reaction conditions of MOCVD, it requires a high vacuum, high temperature, chemically active growth environment, a high-speed rotating substrate, and strict space arrangement of equipment. For that reason, techniques which directly measure a temperature, such as thermocouples, are almost impossible to be used. Therefore, it is necessary to use a non-contact temperature measurement method to measure the growth temperature of the epitaxial wafer. The non-contact temperature measurement method applied in the prior art is a high temperature measurement method which is corrected through a thermal radiation coefficient, and in which a temperature of a surface of an epitaxial wafer is calculated by measuring radiation light of a certain wave band and an emissivity of the surface of the corresponding epitaxial wafer. However, during the growth of the epitaxial wafer, an installation of a temperature measurement system and external environment will affect the stability of the temperature measurement thereof. The influencing factors mainly include: a) the influence of deposition on a window of a reaction chamber; b) the influence of an installation position of the temperature measurement system on a change of the detection distance and a change of a solid angle of an optical detector; c) the influence of the epitaxial wafer growth environment such as a ventilation pressure and the rotary transformation of a graphite disk. These influences will change signals detected by the temperature measurement system, causing a systematic temperature deviation, thereby resulting in uniformity and inaccuracy in the measurement of the growth temperature of the epitaxial wafer.
In order to solve the above problems, the present disclosure provides a self-calibration apparatus and method for a real-time temperature measurement system of a MOCVD device with a dual-wavelength temperature measurement structure.
The self-calibration apparatus for a real-time temperature measurement system of a MOCVD device according to the present disclosure may comprise a MOCVD reaction chamber and an optical detector. The MOCVD reaction chamber includes an epitaxial wafer, and a detection window is provided on the top of the MOVCD reaction chamber, and the light detector emits detection light beams whose wavelengths are respectively λ1 and λ2 toward the epitaxial wafer through the detection window, and the detection light beams are reflected by the epitaxial wafer to form reflected light beams which are detected by the optical detector.
The self-calibration method based on the self-calibration apparatus for a real-time temperature measurement system of a MOCVD device according to the present disclosure may comprise:
measuring response spectrums P(λ, T) of a black-body furnace at different temperatures;
calculating a ratio r0(T) of theoretical thermal radiation powers respectively corresponding to a first wavelength λ1 and a second wavelength λ2
according to the following formulas:
P
0(λ1, T)=∫λ
P
0(λ2, T)=∫λ
where,
P0(λ1, T) indicates a thermal radiation power corresponding to the first wavelength λ1,
λ1 indicates the first wavelength,
Δλ1 indicates a bandwidth corresponding to the first wavelength λ1,
f1(λ) indicates a response function of an optical detector (6) at the first wavelength λ1,
g1(λ) indicates a transmittance of a radiation light corresponding to the first wavelength λ1 in an optical device,
P(λ, T) indicates a response spectrum of the black-body furnace,
τ (T) indicates an expression of a spectral transmission curve,
P0(λ2, T) indicates a thermal radiation power corresponding to the second wavelength λ2,
λ2 indicates the second wavelength,
Δλ2 indicates a bandwidth corresponding to the second wavelength λ2,
f2(λ) indicates a response function of the optical detector (6) at the second wavelength λ2,
g2(λ) indicates a transmittance of a radiation light corresponding to the second wavelength λ2 in an optical device,
T indicates a temperature,
r0(T) indicates a ratio of theoretical thermal radiation powers respectively corresponding to the first wavelength λ1 and the second wavelength λ2;
performing a least square fitting according to the temperatures and the ratios r0(T) of corresponding theoretical thermal radiation powers to obtain a theoretical thermal radiation ratio-temperature curve;
measuring actual thermal radiation powers corresponding to the first wavelength λ1 and actual thermal radiation powers corresponding to the second wavelength λ2 at different temperatures, and obtaining actual thermal radiation ratios;
depicting points corresponding to the actual thermal radiation ratios on the theoretical thermal radiation ratio-temperature curve according to the actual thermal radiation ratios;
substituting values of the temperatures T corresponding to the points into the following formulas to obtain m1 and m2 respectively:
where,
L(λ1, T) indicates an actual thermal radiation power corresponding to the first wavelength λ1,
L(λ2, T) indicates an actual thermal radiation power corresponding to the second wavelength λ2,
m1 indicates a calibration coefficient corresponding to the first wavelength λ1,
m2 indicates a calibration coefficient corresponding to the second wavelength λ2,
f1(λ) indicates a response function of the optical detector (6) at the first wavelength λ1,
g1(λ) indicates a transmittance of a radiation light corresponding to the first wavelength λ1 in an optical device,
f2(λ) indicates a response function of the optical detector (6) at the second wavelength λ2,
g2(λ) indicates a transmittance of a radiation light corresponding to the second wavelength λ2 in an optical device,
ε(λ) indicates an emissivity of a surface of the epitaxial wafer (4),
T indicates a temperature,
λ1 indicates the first wavelength,
Δλ1 indicates a bandwidth corresponding to the first wavelength λ1,
λ2 indicates the second wavelength,
Δλ2 indicates a bandwidth corresponding to the second wavelength λ2,
k indicates Boltzmann constant, k=1.3806×10−23 J/K,
h indicates Planck constant, h=6.626×10−34 J·s,
c indicates a speed of light in vacuum, c=3×108 m/s.
The self-calibration apparatus and method for real-time temperature measurement system of a MOCVD device according to by the disclosure can obtain calibration coefficients m1 and m2 respectively corresponding to the first wavelength λ1 and the second wavelength λ2 in a dual-wavelength temperature measurement structure, thereby realizing self-calibration of the real-time temperature measurement system of a MOCVD device, thus ensuring consistent and accurate measurements of the growth temperature of the epitaxial wafer.
The present invention will be described in detail below in conjunction with the drawings and specific embodiments in order for an in-depth understanding of the invention.
Referring to
As an implementation of the MOCVD reaction chamber 1, the MOCVD reaction chamber 1 further comprises a heating chamber 2 and a graphite susceptor 3. The graphite susceptor 3 is used to bear the epitaxial wafer 4. The heating chamber 2 is used to heat the graphite susceptor 3 and in turn heat the epitaxial wafer 4.
Referring to
The first light source emits a light beam of wavelength λ1, and the second light source emits a light beam of wavelength λ2. The light beam of wavelength λ1 and the light beam of wavelength λ2 are split into two parts after passing through the beam splitter, one part being a reference light, the other part being a detection light beam of wavelength λ1 and a detection light beam of wavelength λ2. The reference light enters a reference light detector to form an electrical signal Irefe.
The detection light beam of the wavelength λ1 and the detection light beam of the wavelength λ2 are reflected by the epitaxial wafer 4 to form reflected lights, and the reflected lights, after passing through the beam splitter 12, are separated into two parts by the first dichroic mirror and the second dichroic mirror. One part has a wavelength λ1, passing through the first filter and then entering the first detector to form an electrical signal Irefl1; the other part has a wavelength λ2, passing through the second filter and then entering the second detector to form an electrical signal Irefl2.
The electrical signals Irefe, Irefl1, and Irefl2 are respectively acquired by the data acquisition unit.
In some embodiments, a frequency of a light emitted by the first light source and the second light source is modulatable, and because there is λ·f=c, where λ is wavelength, f is frequency, and c is speed of light, the wavelength of the light emitted by the first light source and the second light source can be controlled by controlling the frequency.
In some embodiments, the optical detector 6 further includes a light source control circuit for controlling on and off of the first light source and the second light source. When the first light source and the second light source are turned on, a sum of a reflected light intensity and a thermal radiation intensity of the epitaxial wafer 4 is detected; when the first light source and the second light source are turned off, the thermal radiation intensity of the epitaxial wafer 4 may be detected. The reflected light intensity and the thermal radiation intensity are obtained respectively through a separation algorithm, thereby a reflectivity and a temperature of a surface of the epitaxial wafer 4 can be calculated.
In some embodiments, the optical detector 6 further includes a processing unit, and the processing unit is configured to process the light source control circuit and the data acquisition unit. The processing unit may be a CPU, which can be replaced by a single chip microcomputer, a PLC, or the like.
Referring to
Step 1: depicting points corresponding to actual thermal radiation ratios on the theoretical thermal radiation ratio-temperature curve shown in
Step 2: Substituting values of the temperatures T corresponding to the points into the following equation
to obtain m1 and m2 respectively,
where,
L(λ1, T) indicates an actual thermal radiation power corresponding to the first wavelength λ1,
L(λ2, T) indicates a an actual thermal radiation power corresponding to the second wavelength λ2,
m1 indicates a calibration coefficient corresponding to the first wavelength λ1,
m2 indicates a calibration coefficient corresponding to the second wavelength λ2,
f1(λ) indicates a response function of the optical detector 6 at the first wavelength λ1,
g1(λ) indicates a transmittance of a radiation light corresponding to the first wavelength λ1 in an optical device,
f2(λ) indicates a response function of the optical detector 6 at the second wavelength λ2,
g2(λ) indicates a transmittance of a radiation light corresponding to the second wavelength λ2 in an optical device,
ε(λ) indicates an emissivity of a surface of the epitaxial wafer (4),
T indicates a temperature,
λ1 indicates the first wavelength,
Δλ1 indicates a bandwidth corresponding to the first wavelength λ1,
λ2 indicates a second wavelength,
Δλ2 indicates a bandwidth corresponding to the second wavelength λ2,
k indicates Boltzmann constant, k=1.3806×10−23 J/K,
h indicates Planck constant, h=6.626×10−34 J·s,
c indicates a speed of light in vacuum, c=3×108 m/s.
In some embodiments, a method for generating the theoretical thermal radiation ratio-temperature curve of
Step 1: measuring response spectrums of a black-body furnace at different temperatures;
Step 2: calculating a ratio r0(T) of the theoretical thermal radiation powers respectively corresponding to the first wavelength λ1 and the second wavelength λ2,
according to the following equations
P
0(λ1, T)=∫λ
P
0(λ2, T)=∫λ
where,
P0(λ1, T) indicates a thermal radiation power corresponding to the first wavelength λ1,
λ1 indicates the first wavelength,
Δλ1 indicates a bandwidth corresponding to the first wavelength λ1,
f1(λ) indicates a response function of the optical detector 6 at the first wavelength λ1,
g1(λ) indicates a transmittance of a radiation light corresponding to the first wavelength λ1 in an optical device,
P(λ, T) indicates a response spectrum of the black-body furnace,
τ (T) indicates an expression of a spectral transmission curve,
P0(λ2, T) indicates a thermal radiation power corresponding to the second wavelength λ2,
λ2 indicates the second wavelength,
Δλ2 indicates a bandwidth corresponding to the second wavelength λ2,
f2(λ) indicates a response function of the optical detector 6 at the second wavelength λ2,
g2(λ) indicates a transmittance of the radiation light corresponding to the second wavelength λ2 in an optical device,
T indicates a temperature,
r0(T) indicates a ratio of theoretical thermal radiation powers respectively corresponding to the first wavelength λ1 and the second wavelength λ2;
Step 3: performing a least square fitting according to the temperatures and the ratios r0(T) of corresponding theoretical thermal radiation powers to obtain a theoretical thermal radiation ratio-temperature curve.
In some embodiments, when the thermal radiation ratio-temperature curve shown in
In some embodiments, a temperature measurement range (Tmin, Tmax) is (400° C., 1500° C.), and the first wavelength λ1 corresponds to a high temperature interval (Tup, Tmax), and the second wavelength λ2 corresponds to a low temperature interval (Tmin, Tdown).
In some embodiments, (Tmin, Tmax) may be (450° C., 1200° C.), Tup=750° C., Tdown=800° C., λ1=940 nm, λ2=1050 nm.
In some embodiments, the actual thermal radiation ratios r(T) may be calculated as follows:
where,
L(λ1, T) indicates an actual thermal radiation power corresponding to the first wavelength λ1,
L(λ2, T) indicates a an actual thermal radiation power corresponding to the second wavelength λ2,
λ1 indicates the first wavelength,
λ2 indicates the second wavelength,
ε1 indicates an emissivity of a surface of the epitaxial wafer 4 corresponding to the first wavelength λ1,
ε2 indicates an emissivity of the surface of the epitaxial wafer 4 corresponding to the second wavelength λ2, and
T indicates temperature.
In some embodiments, when the epitaxial wafer 4 is an ideal opaque, smooth, flat surface,
ε=1−R/ΔTR
where,
ε indicates an emissivity of the surface of the epitaxial wafer 4,
R indicates a reflectivity of the epitaxial wafer 4, and
ΔTR indicates a reflectivity attenuation factor.
When the epitaxial wafer 4 is a transparent, single-side polished sapphire substrate,
ε=εcarr(1−R/ΔTR)(1−Rdiff){1+R/ΔTR*Rdiff+(1−εcarr)[(Rdiff+R/ΔTR(1−Rdiff)2)]}
where,
ε indicates an emissivity of the surface of the epitaxial wafer 4,
Rdiff indicates a scattering rate of a non-smooth substrate,
εcarr indicates the thermal emissivity of the graphite susceptor 3, and
ΔTR indicates a reflectivity attenuation factor.
When the actual thermal radiation ratios are calculated, the temperatures T can be obtained by heating by the MOCVD reaction chamber 1.
The self-calibration apparatus and method for real-time temperature measurement system of a MOCVD device according to the present disclosure can obtain calibration coefficients m1 and m2 respectively corresponding to the first wavelength λ1 and the second wavelength λ2 in a dual-wavelength temperature measurement structure, thereby realizing self-calibration of the real-time temperature measurement system of a MOCVD device, ensuring consistent and accurate measurements of the growth temperatures of the epitaxial wafer 4.
Generally, specific values of the two constants m1 and m2, or in other words, the intensities of thermal radiation signals are greatly affected by the growth environment of the epitaxial wafer and the systematic parameters, such as an angle of a detector, a transmittance of a window of a reaction chamber, and a reflection signal of a wall of the reaction chamber, as well as a placement position of the epitaxial wafer, and the like. Changes in these parameters can result in different data read by the detector. However, a ratio of thermal radiation intensities of two wavelengths is independent from changes of these parameters, and therefore, the temperature of the epitaxial wafer determined by the ratio of thermal radiation intensities also excludes the effects of these factors.
In some embodiments, with the self-calibration apparatus and method for a real-time temperature measurement system of a MOCVD device according to the present disclosure, a temperature of the MOCVD reaction chamber 1 can also be measured. After the calibration coefficients m1 and m2 having been obtained, when the temperature of the MOCVD reaction chamber 1 is in a low temperature interval, the actual thermal radiation powers (λ1, T) corresponding to the first wavelength λ1 are measured and the temperature of the MOCVD reaction chamber 1 is calculated according to the formula:
when the MOCVD reaction chamber 1 is in a high temperature interval, the actual thermal radiation powers L(λ2, T) corresponding to the second wavelength λ2 are measured and the temperature of the MOCVD reaction chamber 1 is calculated according to the formula:
where,
L(λ1, T) indicates an actual thermal radiation power corresponding to the first wavelength λ1,
L(λ2, T) indicates an actual thermal radiation power corresponding to the second wavelength λ2,
m1 indicates a calibration coefficient corresponding to the first wavelength λ1,
m2 indicates a calibration coefficient corresponding to the second wavelength λ2,
f1(λ) indicates a response function of the optical detector 6 at the first wavelength λ1,
g1(λ) indicates a transmittance of a radiation light corresponding to the first wavelength λ1 in an optical device,
f2(λ) indicates a response function of the optical detector 6 at the second wavelength λ1,
g2(λ) indicates a transmittance of the radiation light corresponding to the second wavelength λ1 in an optical device,
ε(λ) indicates an emissivity of a surface of the epitaxial wafer 4,
T indicates temperature;
λ1 indicates the first wavelength,
Δλ1 indicates a bandwidth corresponding to the first wavelength λ1,
λ2 indicates the second wavelength,
Δλ2 indicates a bandwidth corresponding to the second wavelength λ2,
k indicates Boltzmann constant, k=1.3806×10−23 J/K,
h indicates a Planck constant, h=6.626×10−34 J·s, and
c indicates a speed of light in vacuum, c=3×108 m/s.
In some embodiments, when Tmin<Tup<Tdown<Tmax, there is a transition interval, in which the temperature of the MOCVD reaction chamber can be measured respectively under the condition of the first wavelength λ1 and the condition of the second wavelength λ2. When the real-time temperature measurement method for the MOCVD reaction chamber according to the present disclosure is used to measure a temperature in a transition temperature interval, a smoothing algorithm can be used to obtain an actual temperature value. In the transition temperature interval, the temperature Tlow of the MOCVD reaction chamber in a low temperature interval can be measured under the condition of the first wavelength λ1, and the temperature Thigh of the MOCVD reaction chamber in a high temperature interval can be measured under the condition of the second wavelength λ2. Since the temperature Thigh is different from the temperature Tlow, at this time, the smoothing algorithm can be used to calculate the actual temperature of the MOCVD reaction chamber. For example, a single smoothing algorithm
can be used to calculate the actual temperature of the MOCVD reaction chamber. Therefore, the real-time temperature measurement method for the MOCVD reaction chamber according to the present invention has a wide range of application.
The temperature of the MOCVD reaction chamber 1 measured in this manner is much closer to an actual temperature.
The objects, the technical solutions and the advantageous effects of the invention have been described in detail with reference to the above specific embodiments. It should be appreciated that the above embodiments are merely specific embodiments, but not intended to limit the invention. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principle of the invention should all be included within the scope of the invention.
Number | Date | Country | Kind |
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201310655598.3 | Dec 2013 | CN | national |
Filing Document | Filing Date | Country | Kind |
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PCT/CN2014/084682 | 8/19/2014 | WO | 00 |