Claims
- 1. A static semiconductor memory comprising:
- a first transistor formed on a semiconductor substrate,
- an insulating film formed on the first transistor except part of a gate electrode of said first transistor;
- an epitaxial layer formed on the insulating film, an exposed portion of said gate electrode, and the semiconductor substrate separated from said first transistor, and
- a portion of a second transistor formed on a first portion of said epitaxial layer on said semiconductor substrate,
- wherein said first portion of said epitaxial layer is of a single crystalline structure, and a second portion of said epitaxial layer is of a polycrystalline structure on the insulating film, and said second portion of said epitaxial layer on the insulating film is used as a high resistance load element.
Priority Claims (3)
Number |
Date |
Country |
Kind |
62-233931 |
Sep 1987 |
JPX |
|
62-233933 |
Sep 1987 |
JPX |
|
63-23006 |
Feb 1988 |
JPX |
|
Parent Case Info
This application is a continuation of application Ser. No. 08/638,504 filed Apr. 26, 1996, now abandoned; which was a division of application Ser. No. 07/629,039 filed Dec. 19, 1990 now abandoned; which was a continuation of application Ser. No. 07/242,990, filed Sep. 12, 1988 now abandoned.
US Referenced Citations (2)
Number |
Name |
Date |
Kind |
4489478 |
Sakurai |
Dec 1984 |
|
5087956 |
Ikeda et al. |
Feb 1992 |
|
Non-Patent Literature Citations (1)
Entry |
Dennison et al., "A Novel MOS Device Structure with S/D Contacts Over Oxide (COO)," IEDM 85, pp. 204-207. |
Divisions (1)
|
Number |
Date |
Country |
Parent |
629039 |
Dec 1990 |
|
Continuations (2)
|
Number |
Date |
Country |
Parent |
638504 |
Apr 1996 |
|
Parent |
272990 |
Sep 1988 |
|