Semiconductor device and method of manufacturing the same

Abstract

A method of manufacturing a semiconductor device includes: forming a mask layer on a layer that is to be subjected to etching and contains at least one of silicon carbonate, silicon oxide, sapphire, gallium nitride, aluminum gallium nitride, indium gallium nitride, and aluminum nitride, the mask layer having an opening and including a nickel chrome film, a gold film, and a nickel film in this order when seen from the layer to be subjected to etching; and performing etching on the layer to be subjected to etching, with the mask layer serving as a mask.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

Other objects, features and advantages of the present invention will become more apparent from the following detailed description when read in conjunction with the accompanying drawings, in which:

FIGS. 1A through 1C are cross-sectional views showing the first half of a method of manufacturing a semiconductor device in accordance with a first embodiment of the present invention;

FIGS. 2A through 2C are cross-sectional views showing the second half of the method of manufacturing the semiconductor device in accordance with the first embodiment;

FIG. 3 illustrates the problem with a manufacturing method of a comparative example;

FIGS. 4A through 4D are cross-sectional views showing a method of manufacturing a semiconductor device in accordance with a second embodiment of the present invention;

FIG. 5 is a cross-sectional view showing a method of manufacturing a semiconductor device in accordance with a third embodiment of the present invention;

FIGS. 6A and GB are cross-sectional views showing a method of manufacturing a semiconductor device in accordance with a fourth embodiment of the present invention; and

FIGS. 7A and 7B are cross-sectional views showing a method of manufacturing a semiconductor device in accordance with a modification of the fourth embodiment.

Claims

1. A method of manufacturing a semiconductor device, comprising: forming a mask layer on a layer that is to be subjected to etching and contains at least one of silicon carbonate, silicon oxide, sapphire, gallium nitride, aluminum gallium nitride, indium gallium nitride, and aluminum nitride, the mask layer having an opening and including a nickel chrome film, a gold film, and a nickel film stacked in this order from the layer to be subjected to etching; andperforming etching on the layer to be subjected to etching, with the mask layer.

2. The method as claimed in claim 1, further comprising removing the nickel film from the mask layer and forming a first metal layer that includes gold on an underlying layer of the nickel film.

3. The method as claimed in claim 1, wherein: the layer to be subjected to etching is a substrate; andperforming etching includes forming a via hole that penetrates the substrate.

4. The method as claimed in claim 1, wherein the etching is performed by one of a reactive ion etching technique, an electron cyclotron resonance etching technique, and an induced coupling plasma etching technique.

5. The method as claimed in claim 1, wherein the etching is performed at a temperature of 250° C. or higher.

6. The method as claimed in claim 1, further comprising forming a second metal layer on at least a layer of the mask layer and in a concave or via hole portion that is formed by the etching.

7. A semiconductor device comprising: a substrate or layer that contains at least one of silicon carbonate, silicon oxide, sapphire, gallium nitride, aluminum gallium nitride, indium gallium nitride, and aluminum nitride; anda first metal layer that is formed on the substrate or layer, has an opening, and includes a nickel chrome film and a gold film stacked in this order when seen from the substrate or layer,the substrate or layer having a concave or via hole portion below the opening.

8. A semiconductor device comprising: a substrate or layer that contains at least one of silicon carbonate, silicon oxide, sapphire, gallium nitride, aluminum gallium nitride, indium gallium nitride, and aluminum nitride; anda first metal layer that is formed on the substrate or layer, has an opening, and includes a nickel chrome film and a gold film stacked in this order when seen from the substrate or layer,the substrate or layer having a concave or vial hole portion below the opening,a second metal layer being formed on the first metal layer and in the concave or via hole portion.

9. The semiconductor device as claimed in claim 7, wherein the concave or via hole portion is formed by one of a reactive ion etching technique, an electron cyclotron resonance etching technique, and an induced coupling plasma etching technique.

10. The semiconductor device as claimed in claim 7, wherein the first metal layer includes a nickel film formed on the gold film.

11. The semiconductor device as claimed in claim 8, wherein the second metal layer is made of gold.

12. The semiconductor device as claimed in claim 8, wherein the concave or via hole portion is formed by one of a reactive ion etching technique, an electron cyclotron resonance etching technique, and an induced coupling plasma etching technique.

13. The semiconductor device as claimed in claim 8, wherein the first metal layer includes a nickel film formed on the gold film.