Basil Weir, “Integrated High-Voltage Driver Circuit in Gate Array Form,” SIDD International Symposium Digest of Technical Paper, SID 82 Digest, May 1982, pp 268-269.* |
T. Terashima et al. Structure of 600V IC and A New Voltage Sensing Device, IEEE, 1993 pp. 224-229. |
K. Tsuchiya et al, P-CH and N-CH IGBTS for push-pull circuit in Driver ICS, IEEE 1991, pp. 65-69. |
A. Nakagawa et al. New 500V Output Device Structures for thin Silicon Layer on Silicon Dioxide Film. Proceedings of 1990 International Symposium on Power semiconductor Devices & Ics, pp. 97-101, 1990. |
Basil Weir, “Integrated High-Voltage Driver Circuits in Gate Array Form,” SID International Symposium Digest of Technical Papers, SID 82 Digest, May 1982, pp. 268-269. |
Jacek Korec, “Silicon-on-insulator technology for high-temperature, smart-power applications,” Materials Science and Engineering B, vol. B29, No. 1/03, Jan. 1, 1995, pp. 1-6. |
Tadanori Yamaguchi et al., “Process and Device Design of a 1000-V MOS IC,” IEEE Transactions on Electron Devices, vol. Ed-29, No. 8, Aug. 1982, pp. 1171-1178. |
Kiyoto Watabe et al., “A 0.8μm High Voltage IC using Newly Designed 600V Lateral IGBT o Thick Buried-Oxide SOI,” Proceedings of the 8th International Symposium on Power Semiconductor Devices and IC'S (ISPSD), Maui, Hawaii, May 20-23, 1996, No. SYMP. 8, May 20, 1996, pp. 151-154. |