Number | Date | Country | Kind |
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62-206857 | Aug 1987 | JPX |
This application is a continuation of U.S. application Ser. No. 07/207,196, filed on June 16, 1988, now abandoned.
Number | Name | Date | Kind |
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4587713 | Goodman et al. | May 1986 | |
4684413 | Goodman et al. | Aug 1987 |
Number | Date | Country |
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0229362 | Jul 1987 | EPX |
Entry |
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"Insulated Gate Transistor Modeling and Optimization", IEDM Digest, Dec. 1984, 10.5, pp. 274-277, by Yilmay et al. |
"Improved COMFETs with Fast Switching Speed and High-Current Capability", IEDM 83, 4.3, pp. 79-82, by Goodman et al., Dec. 1983. |
"The Insulated Gate Transistor: A New Three-Terminal MOS-Controlled Bipolar Power Device", IEEE Transactions on Electron Devices, vol. ED-31, No. 6, Jun. 1984, pp. 821-828, by Baliga et al. |
Number | Date | Country | |
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Parent | 207196 | Jun 1988 |