Horiuchi, Semiconductor Device and its Method of Manufacture (English translation of japanese patent application JP 9-139434).* |
Ohno et al., “Suppression of the Parasitic Bipolar Effect in Ultra-Thin-Film nMOSFETs/SIMOX by Ar Ion Implantation into Source/Drain Regions”, 1995 IEEE, 12/10-13/95. |
Ploeg et al., “Elimination of Bipolar-Induced Breakdown in Fully-Developed SOI MOSFETs”, 1992 IEEE, 12/13-16/92. |
Extended Abstracts (The 2nd Spring Meeting, 1995): the Society of Applied Physics and Related Societies, p. 755. |