Claims
- 1. A semiconductor device comprising:a substrate; a inter-layer dielectric over the substrate and containing a plurality of spaced apart openings; copper (Cu) or a Cu alloy filling the openings and forming a pattern comprising spaced apart neighboring interconnect members each having an upper surface, wherein the inter-layer dielectric between the neighboring interconnect members comprises: a main silicon oxide region; and a silicon oxynitride surface portion, having an upper surface, on the main silicon oxide region; and a capping layer on the upper surface of the neighboring interconnect members and on in the inter-layer dielectric, wherein the upper surface of the silicon oxynitride surface portion is substantially coplanar with the upper surface of the spaced apart neighboring interconnect members.
- 2. The semiconductor device according to claim 1, wherein the capping layer comprises silicon nitride.
- 3. The semiconductor device according to claim 2, wherein:each interconnect member comprises a diffusion barrier layer lining at the opening; and the Cu or Cu alloy is on the barrier metal lining.
- 4. The semiconductor device according to claim 3, wherein the openings comprise trenches, and the interconnect members comprise lines.
- 5. The semiconductor device according to claim 3, wherein the neighboring interconnect members are spaced apart by a distance of about 0.1 micron to about 0.5 micron.
- 6. The semiconductor device according to claim 5, wherein the silicon oxynitride surface portion between the neighboring interconnect members has a depth, from the upper surface of the neighboring interconnect members to the main silicon oxide region, of about 30 Å to about 200 Å.
- 7. The semiconductor device according to claim 1, wherein the silicon oxynitride upper portion comprises a converted portion of silicon oxide.
Parent Case Info
This is a division of application Ser. No. 09/477,820, filed Jan. 5, 2000, now U.S. Pat. No. 6,146,988.
US Referenced Citations (13)
Non-Patent Literature Citations (1)
Entry |
“Passivation of Copper by Silicide Formation in Dilute Silane” by Hymes et al., J. App. Phys., vol. 71, No. 9 (May 1992), pp. 4623-4625. |