Claims
- 1. A semiconductor device comprising:
- a semiconductor body having a recess formed therein;
- an impurity doped region formed within said semiconductor body;
- a gate electrode region provided directly on said impurity doped region and filling said recess formed in said semiconductor body;
- first and second semiconductor regions having said gate electrode region sandwiched therebetween, said first and second semiconductor regions being positioned on a surface of said semiconductor body and defining a source region and a drain region;
- an insulating film provided between said gate electrode region and a portion of said semiconductor body;
- a first channel constituting a first path at least partly in a direction substantially perpendicular to said surface and within said semiconductor body through which carriers flow into said second semiconductor region through said impurity doped region from said first semiconductor region; and
- a second channel constituting a second path in a direction along said surface of said semiconductor body through which carriers flow into said second semiconductor region from said first semiconductor region.
- 2. A semiconductor device according to claim 1, wherein said gate electrode region includes an aluminum electrode.
- 3. A semiconductor device according to claim 2, wherein said aluminum electrode is made of a monocrystalline aluminum.
Priority Claims (1)
Number |
Date |
Country |
Kind |
2-144544 |
Jun 1990 |
JPX |
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Parent Case Info
This application is a continuation of application Ser. No. 07/708,216, filed May 31, 1991, now abandoned.
US Referenced Citations (7)
Foreign Referenced Citations (7)
Number |
Date |
Country |
54-23478 |
Feb 1979 |
JPX |
59-228762 |
Dec 1984 |
JPX |
62-136877 |
Jun 1987 |
JPX |
64-21968 |
Jan 1989 |
JPX |
1-183855 |
Jul 1989 |
JPX |
WO8603341 |
Jun 1986 |
WOX |
2195663 |
Apr 1988 |
GBX |
Non-Patent Literature Citations (1)
Entry |
IBM Technical Disclosure Bulletin, vol. 29, No. 10, Mar. 1987, pp. 4305-4307; "Trench MOSFET (3-D Structure)". |
Continuations (1)
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Number |
Date |
Country |
Parent |
708216 |
May 1991 |
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