The above and other objects, features and advantages of this invention will become more apparent by reference to the following detailed description of the invention taken in conjunction with the accompanying drawings, wherein:
Preferred embodiments of the present invention will now be explained in detail with reference to the drawings.
As shown in
According to the semiconductor device of the present embodiment, the sources of the P-channel MOS transistors 11p to 14p are connected via switching areas 111, 121, 131, and 141 to the main power supply wiring VDD or the pseudo power supply wiring VDDZ. The sources of the N-channel MOS transistors 11n to 14n are connected via switching areas 112, 122, 132, and 142 to the main power supply wiring VSS or the pseudo power supply wiring VSSZ.
The switching areas 111, 121, 131, and 141 are circuit areas for connecting the sources of the transistors 11p to 14p to either the main power supply wiring VDD or the pseudo power supply wiring VDDZ. According to this example, the switching areas 111 and 131 are connected to the pseudo power supply wiring VDDZ, while the switching areas 121 and 141 are connected to the main power supply wiring VDD. Similarly, the switching areas 112, 122, 132, and 142 are circuit areas for connecting the sources of the transistors 11n to 14n to either the main power supply wiring VSS or the pseudo power supply wiring VSSZ. According to this example, the switching areas 112 and 132 are connected to the main power supply wiring VSS, while the switching areas 122 and 142 are connected to the pseudo power supply wiring VSSZ.
As described later, such a switching area is for switching connection in response to changes in mask at the time of designing, unlike a usual electronic switch that is a circuit which enables electrical switching after manufacturing a semiconductor device. Accordingly, after the semiconductor device is completed, the switching area cannot be utilized for changing the connection.
As shown
The power connection conductor 200 is connected via a plurality of through-hole conductors 220 to the underlying drawing conductor 210. The drawing conductor 210 is connected to the source of the transistor 11p. One end of the through-hole conductor 220 is connected to the drawing conductor 210, and the other end is led to the substantially intermediate portion between the main power supply wiring VDD and the pseudo power supply wiring VDDZ.
The device configurations of the switching areas 121, 131, and 141 are the same as in
As shown in
The source of the transistor 11p is thus connected via the drawing conductor 210, the through-hole conductor 220, and the power connection conductor 200 to the main power supply wiring VDD. When the switching areas 121, 131, and 141 are connected to the main power supply wiring VDD or the switching areas 112, 122, 132, and 142 are connected to the main power supply wiring VSS, as shown in
As shown in
The source of the transistor 11p is thus connected via the drawing conductor 210, the through-hole conductor 220, and the power connection conductor 200 to the pseudo power supply wiring VDDZ. When the switching areas 121, 131, and 141 are connected to the pseudo power supply wiring VDDZ or the switching areas 112, 122, 132, and 142 are connected to the pseudo power supply wiring VSSZ, as shown in
According to the switching area utilized in the present embodiment, the power connection conductor 200 is extended to either the main power supply wiring or the pseudo power supply wiring to connect the source of the transistor to either the main power supply wiring or the pseudo power supply wiring. If the source of the transistor is connected to one of the main power supply wiring and the pseudo power supply wiring and then connected to the other in response to design changes, a mask is modified remarkably easily. Switching of connection is completed merely by exchanging the rectangular conductor 201 for 202 on the mask. Other lines and through-holes do not need to be moved.
The configuration of the semiconductor device of the present embodiment will be described in detail by taking a dependently connected two-stage inverter circuit as an example.
As shown in
The region P is provided with an N-well 301, the source region 311s and drain region 311d of the P-channel MOS transistor which constitutes the first inverter, and the source region 313s and drain region 313d of the P-channel MOS transistor which constitutes the second inverter. The second inverter has two source regions 313s and two drain regions 313d because its drive capability is designed to be larger than that of the first inverter. Well contact regions 301a and 301b with high impurity density are provided at the both ends of the N-well 301.
The region N is provided with a P-well 302, the source region 312s and drain region 312d of the N-channel MOS transistor which constitutes the first inverter, and the source region 314s and drain region 314d of the N-channel MOS transistor which constitutes the second inverter. Well contact regions 302a and 302b with high impurity density are provided at the both ends of the P-well 302.
In
As shown in
The base connection conductor 321 is provided for supplying base potential to the base of the P-channel MOS transistor and made so as to surround the gate electrodes 311g and 313g on three sides. In
The base connection conductor 322 is provided for supplying base potential to the base of the N-channel MOS transistor and made so as to surround the gate electrodes 312g and 314g on three sides. In
As shown in
The tungsten wiring layer is also provided with conductors 331 to 335. The conductor 331 is provided for supplying source potential to the P-channel MOS transistor which constitutes the first inverter. The conductor 331 is connected via a contact 331a to the source region 311s and via a contact 331b to the upper aluminum wiring layer. The conductor 332 is provided for supplying source potential to the N-channel MOS transistor which constitutes the first inverter. The conductor 332 is connected via a contact 332a to the source region 312s and via a contact 332b to the upper aluminum wiring layer.
The conductor 333 is connected via a contact 333a to the drain region 311d and via a contact 333b to the drain region 312d. The conductor 333 is further connected via the contact 319 to the underlying gate electrodes 313g and 314g so as to connect the first inverter to the second inverter.
The conductor 334 is provided for supplying source potential to the P-channel MOS transistor which constitutes the second inverter. The conductor 334 is connected via a contact 334a to the source region 313s and via a contact 334b to the upper aluminum wiring layer. The conductor 335 is provided for supplying source potential to the N-channel MOS transistor which constitutes the second inverter. The conductor 335 is connected via a contact 335a to the source region 314s and via a contact 335b to the upper aluminum wiring layer.
The tungsten wiring layer is further provided with conductors 341 and 342. The conductor 341 is connected via a contact 321b to the underlying base connection conductor 321 and via the contact 309 to the well contact region 301b. The base connection conductor 321 and the well contact region 301b are thus shorted via the conductor 341. Similarly, the conductor 342 is connected via a contact 322b to the underlying base connection conductor 322 and via the contact 309 to the well contact region 302b. The base connection conductor 322 and the well contact region 302b are thus shorted via the conductor 342.
The tungsten wiring layer is provided with conductors 351 and 352. The conductor 351 is connected via a contact 351a to the upper main power supply wiring VDD and the underlying well contact region 301a and via the contact 321a to the underlying base connection conductor 321. The well contact region 301a thus receives the potential of the main power supply wiring VDD via the conductor 351. The well contact region 301b also receives the potential of the main power supply wiring VDD via the conductor 351, the base connection conductor 321, and the conductor 341.
Similarly, the conductor 352 is connected via a contact 352a to the upper main power supply wiring VSS and the well contact region 302a and via the contact 322a to the underlying base connection conductor 322. The well contact region 302a thus receives the potential of the main power supply wiring VSS via the conductor 352. The well contact region 302b also receives the potential of the main power supply wiring VSS via the conductor 352, the base connection conductor 322, and the conductor 342.
According to the present embodiment, the well contact regions 301a and 301b are connected to the main power supply wiring VDD, while the well contact regions 302a and 302b are connected to the main power supply wiring VSS. Namely, the well contact regions 301a and 301b are not connected to the pseudo power supply wiring VDDZ. The well contact region 302a and 302b are not connected to the pseudo power supply wiring VSSZ. According to the semiconductor device of this embodiment, as shown in
As shown in
Similarly, the contacts 332b and 335b are provided between the main power supply wiring VSS and the pseudo power supply wiring VSSZ. An end of the through-hole conductor placed between the main power supply wiring VSS and the pseudo power supply wiring VSSZ is led therebetween. The contact 332b is connected via a power connection conductor 403 to the pseudo power supply wiring VSSZ, while the contact 335b is connected via a power connection conductor 404 to the main power supply wiring VSS. The underlying conductor 332 is connected to the pseudo power supply wiring VSSZ, while the underlying conductor 335 is connected to the main power supply wiring VSS.
The aluminum wiring layer is further provided with a conductor 405 which is connected via the contact 330b to the conductor 330out. The conductor 405 is further connected via a contact (not shown) to an upper metal wiring layer from which the output signal is drawn.
As the result of the above-described configuration, the two-stage inverter circuit is made on the layout area 300 shown in
Whether the sources of the transistors are connected to the main power supply wiring or the pseudo power supply wiring is determined only by the layout of the power connection conductors 401 to 404 placed between the main power supply wiring and the pseudo power supply wiring. If the source of the transistor is switched from the main power supply wiring to the pseudo power supply wiring or vice versa in response to an improper connection to the power source or a logical change, the positions of the power connection conductors 401 to 404 on the mask are merely changed. Other elements do not need to be changed.
As shown in
According to the semiconductor device of the present embodiment, the base is connected to the main power supply wiring in a fixed manner regardless of whether the source of the transistor is connected to the main power supply wiring or the pseudo power supply wiring. Even if the source of the transistor is switched from the main power supply wiring to the pseudo power supply wiring or vice versa, connections to the base do not need to be changed.
Because the base of the transistor is shorted with the source in usual designs, conductors for shorting directly the base and the source are usually provided. According to the present embodiment, however, the source is configured to be connected to both the main power supply wiring and the pseudo power supply wiring, and connection destinations are changed easily. In view of that, the base must be connected to the main power supply wiring. In order to realize that, the conductor for shorting the base and the source of the transistor directly is not required. Instead, by utilizing the base potential supplying conductor, the main power supply wiring is connected to the base of the transistor. Because the gate electrode layer is utilized for the base potential supplying conductor as described above, the area is not increased and the number of wiring layers is not increased, either.
According to the preferred arrangement method, as shown in
As shown in
According to usual design methods, the heights of the layout areas are adjusted depending on whether the source of the transistor is connected to the main power supply wiring or the pseudo power supply wiring, and the main power supply wiring and the pseudo power supply wiring are partially wound correspondingly. According to such a layout, however, if the source of the transistor is switched from the main power supply wiring to the pseudo power supply wiring or vice versa, other layout areas may be greatly affected. A mask is thus modified extensively.
As shown in
The present invention is in no way limited to the aforementioned embodiments, but rather various modifications are possible within the scope of the invention as recited in the claims, and naturally these modifications are included within the scope of the invention.
Number | Date | Country | Kind |
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2006-250620 | Sep 2006 | JP | national |