Claims
- 1. A semiconductor device comprising:
- a substrate; a semiconductor element formed in said substrate; an output electrode formed on said semiconductor element; a detector electrode; an aluminum electrode formed on said substrate and being spaced from and surrounding said detector electrode; an oxide film formed on said semiconductor substrate between said output electrode and said aluminum electrode; said detector electrode being formed on said oxide film such that said detector electrode is separated from and surrounds said output electrode; and a resistor connected only between said detector electrode and said output electrode.
- 2. A semiconductor device of claim 1, wherein said detector electrode overlaps and covers one end of said resistor and said output electrode overlaps and covers another end of said resistor.
- 3. A semiconductor device according to claim 1, wherein said aluminum electrode is connected to a channel stopper diffused layer surrounding said aluminum electrode.
- 4. A semiconductor device according to claim 3, wherein said aluminum electrode is supplied with a power supply voltage.
- 5. A semiconductor device according to claim 1, wherein voltage on said detector electrode is monitored for a warning of an aging degradation of the semiconductor element.
Priority Claims (1)
Number |
Date |
Country |
Kind |
4-141280 |
Jun 1992 |
JPX |
|
Parent Case Info
This is a continuation of application Ser. No. 08/068,383, filed May 28, 1993 abandoned.
US Referenced Citations (5)
Foreign Referenced Citations (1)
Number |
Date |
Country |
56-74961 |
Jun 1981 |
JPX |
Continuations (1)
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Number |
Date |
Country |
Parent |
68383 |
May 1993 |
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