Claims
- 1. A semiconductor device having a thyristor operating in response to a signal supplied through a photocoupler, said semiconductor device comprising:
- (a) a heat radiation metal plate for diffusing heat generated in said semiconductor device;
- (b) a multilayer member provided on said heat radiation metal plate, said multilayer member having:
- (b-1) an insulating substrate,
- (b-2a shielding metal layer provided on said insulating substrate for shielding said semiconductor device against external noise, and
- (b-3) an insulation layer provided on said shielding metal layer; and
- (c) an electronic circuit provided on said multilayer member and having a photocoupler and a thyristor operating in response to a signal supplied through said photocoupler,
- said shielding metal layer being connected to a main electrode of said thyristor.
- 2. A semiconductor device in accordance with claim 1, wherein
- a conductive pattern layer is provided on said insulation layer,
- said electronic circuit being provided on said conductive pattern layer.
- 3. A semiconductor device in accordance with claim 2, wherein
- said electronic circuit and said shielding metal layer are electrically connected with each other through a conductive material provided in a through hole formed in said insulation layer.
- 4. A semiconductor device in accordance with claim 3, wherein
- said multilayer member is formed by integrating a plurality of ceramic plates having surfaces subjected to metallization processing.
- 5. A semiconductor device in accordance with claim 1, wherein
- said insulating substrate is provided thereon with a conductive pattern layer on which a part of said electronic circuit is placed,
- a part of said conductive pattern layer is said shielding metal layer,
- said insulation layer is provided on an upper surface of said shielding metal layer, and
- within said electronic circuit, a part connected to a control electrode of said thyristor is provided on said insulation layer.
- 6. A semiconductor device in accordance with claim 5, wherein
- said insulation layer is provided on a first portion of said shielding metal layer,
- said thyristor is placed on a second portion of said shielding metal layer, and
- said shielding metal layer forms, within a plurality of electrodes of said thyristor an electrode being different from said control electrode.
- 7. A semiconductor device in accordance with claim 6, wherein
- said insulating substrate is formed by a ceramic plate and said insulation layer is prepared by a resin film.
Priority Claims (1)
Number |
Date |
Country |
Kind |
62-43427 |
Feb 1987 |
JPX |
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Parent Case Info
This application is a continuation of application Ser. No. 152,494 filed on Feb. 5, 1988, now abandoned.
Foreign Referenced Citations (5)
Number |
Date |
Country |
0199635 |
Oct 1986 |
EPX |
60-4241 |
Jan 1985 |
JPX |
60-187038 |
Sep 1985 |
JPX |
60-224244 |
Nov 1985 |
JPX |
61-81655 |
Apr 1986 |
JPX |
Continuations (1)
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Number |
Date |
Country |
Parent |
152494 |
Feb 1988 |
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