comprising a gate to body connection

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H01L29/783

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/783comprising a gate to body connection

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Three-dimensional semiconductor device and method of fabricating th...
- Patent number 12,218,133
- Issue date Feb 4, 2025
- Samsung Electronics Co., Ltd.
- Sungil Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Device architectures with tensile and compressive strained substrates
- Patent number 12,218,201
- Issue date Feb 4, 2025
- National University of Singapore
- Bich-Yen Nguyen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Flash memory device with three dimensional half flash structure and...
- Patent number 12,218,253
- Issue date Feb 4, 2025
- Taiwan Semiconductor Manufacturing Company Limited
- Yu-Chu Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ferroelectric devices including a single crystalline ferroelectric...
- Patent number 12,219,776
- Issue date Feb 4, 2025
- SanDisk Technologies LLC
- Adarsh Rajashekhar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit devices and fabrication techniques
- Patent number 12,211,853
- Issue date Jan 28, 2025
- STMicroelectronics, Inc.
- John H. Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices and methods of manufacturing thereof
- Patent number 12,211,919
- Issue date Jan 28, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shih-Yao Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and associated fabricating method
- Patent number 12,211,935
- Issue date Jan 28, 2025
- Taiwan Semiconductor Manufacturing Company Ltd.
- Chen-Liang Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor doped region with biased isolated members
- Patent number 12,211,807
- Issue date Jan 28, 2025
- Texas Instruments Incorporated
- Alexei Sadovnikov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 12,211,836
- Issue date Jan 28, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chia-Wen Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including gate oxide layer
- Patent number 12,211,915
- Issue date Jan 28, 2025
- United Microelectronics Corp.
- Ming-Hua Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and related apparatus for reducing gate-induced drain leakag...
- Patent number 12,211,926
- Issue date Jan 28, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Kong-Beng Thei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Mechanisms for forming FinFET device
- Patent number 12,211,750
- Issue date Jan 28, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Che-Cheng Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,211,534
- Issue date Jan 28, 2025
- Semiconductor Energy Laboratory Co., Ltd.
- Shunpei Yamazaki
- G11 - INFORMATION STORAGE
Information Patent Grant
Stacked ferroelectric structure
- Patent number 12,207,474
- Issue date Jan 21, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Rainer Yen-Chieh Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Complementary metal oxide semiconductor device
- Patent number 12,205,951
- Issue date Jan 21, 2025
- Samsung Electronics Co., Ltd.
- Sangwook Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-voltage transistor and method for fabricating the same
- Patent number 12,205,995
- Issue date Jan 21, 2025
- United Microelectronics Corp.
- Ling-Gang Fang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for fabricating the same
- Patent number 12,206,007
- Issue date Jan 21, 2025
- United Microelectronics Corp.
- Wen-Wen Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,205,622
- Issue date Jan 21, 2025
- Semiconductor Energy Laboratory Co., Ltd.
- Shunpei Yamazaki
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor device and electronic device
- Patent number 12,205,625
- Issue date Jan 21, 2025
- Semiconductor Energy Laboratory Co., Ltd.
- Hiromichi Godo
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor device having a gate electrode with a top peripheral...
- Patent number 12,204,232
- Issue date Jan 21, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hung-Shu Huang
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Negative differential resistance device
- Patent number 12,206,021
- Issue date Jan 21, 2025
- Samsung Electronics Co., Ltd.
- Kilsu Jung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory cell of charge-trapping non-volatile memory
- Patent number 12,199,160
- Issue date Jan 14, 2025
- Ememory Technology Inc.
- Chia-Jung Hsu
- G11 - INFORMATION STORAGE
Information Patent Grant
Three-dimensional memory device
- Patent number 12,200,940
- Issue date Jan 14, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Han-Jong Chia
- G11 - INFORMATION STORAGE
Information Patent Grant
LDMOS with polysilicon deep drain
- Patent number 12,199,179
- Issue date Jan 14, 2025
- Powerchip Semiconductor Manufacturing Corporation
- Hirokazu Fujimaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Elevationally-extending transistors, devices comprising elevational...
- Patent number 12,199,182
- Issue date Jan 14, 2025
- Micron Technology, Inc.
- Scott E. Sills
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including a superlattice and an asymmetric cha...
- Patent number 12,199,180
- Issue date Jan 14, 2025
- ATOMERA INCORPORATED
- Hideki Takeuchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device structure and manufacturing method thereof
- Patent number 12,200,943
- Issue date Jan 14, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Wei Ting Hsieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device and a semiconductor...
- Patent number 12,191,304
- Issue date Jan 7, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Tung Ying Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor structure with multi-layer field plate and related method
- Patent number 12,191,361
- Issue date Jan 7, 2025
- GLOBALFOUNDRIES U.S. Inc.
- Ketankumar Harishbhai Tailor
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Layered structure, semiconductor device including the same, and man...
- Patent number 12,191,389
- Issue date Jan 7, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Mauricio Manfrini
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20250040206
- Publication date Jan 30, 2025
- Samsung Electronics Co., Ltd.
- Dahye Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Planar JFET Device with Reduced Gate Resistance
- Publication number 20250040166
- Publication date Jan 30, 2025
- SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Alexander Viktorovich BOLOTNIKOV
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH MULTIPLE GATES AND RELATED METHOD
- Publication number 20250040243
- Publication date Jan 30, 2025
- Avago Technologies International Sales Pte. Limited
- Qing Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MOS TRANSISTOR HAVING SUBSTANTIALLY PARALLELPIPED-SHAPED INSULATING...
- Publication number 20250040165
- Publication date Jan 30, 2025
- STMicroelectronics (Rousset) SAS
- Arnaud REGNIER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Laterally-Diffused Metal-Oxide Semiconductor Devices with Reduced G...
- Publication number 20250040178
- Publication date Jan 30, 2025
- Avago Technologies International Sales Pte. Limited
- Akira Ito
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOMAGNET FOR SPIN-BASED QUANTUM-DOT QUBIT
- Publication number 20250037917
- Publication date Jan 30, 2025
- The Boeing Company
- Antonio Mei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE
- Publication number 20250040144
- Publication date Jan 30, 2025
- Semiconductor Energy Laboratory Co., Ltd.
- Shunpei YAMAZAKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR MEMORY DEVICE
- Publication number 20250040145
- Publication date Jan 30, 2025
- Samsung Electronics Co., Ltd.
- Bonjae KOO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Area Efficient Fin-Based Laterally-Diffused Metal-Oxide Semiconduct...
- Publication number 20250040177
- Publication date Jan 30, 2025
- Avago Technologies International Sales Pte. Limited
- Qing Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH VOLTAGE FIELD EFFECT TRANSISTORS WITH DIFFERENT SIDEWALL SPACE...
- Publication number 20250040217
- Publication date Jan 30, 2025
- Western Digital Technologies, Inc.
- Masashi ISHIDA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3T MEMORY WITH ENHANCED SPEED OF OPERATION AND DATA RETENTION
- Publication number 20250031380
- Publication date Jan 23, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hung-Li Chiang
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR DEVICE BASED ON DIELECTRIC MATERIAL CONTAINING METAL...
- Publication number 20250031379
- Publication date Jan 23, 2025
- Institute of Microelectronics, Chinese Academy of Sciences
- Qing LUO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HEMT TRANSISTOR WITH ADJUSTED GATE-SOURCE DISTANCE, AND MANUFACTURI...
- Publication number 20250022947
- Publication date Jan 16, 2025
- STMicroelectronics S.r.l.
- Ferdinando IUCOLANO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND A METHOD FOR FABRICATING THE SAME
- Publication number 20250022876
- Publication date Jan 16, 2025
- Samsung Electronics Co., Ltd.
- Sung Min KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY STRUCTURE OF THREE-DIMENSIONAL NOR MEMORY STRINGS OF CHANNEL...
- Publication number 20250024685
- Publication date Jan 16, 2025
- Sunrise Memory Corporation
- Jie Zhou
- G11 - INFORMATION STORAGE
Information Patent Application
FERROELECTRIC SEMICONDUCTOR DEVICE INCLUDING MEMORY CELL HAVING A T...
- Publication number 20250024686
- Publication date Jan 16, 2025
- SK HYNIX INC.
- Mir IM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR STRUCTURE WITH MULTIPLE VERTICAL THIN BODIES
- Publication number 20250015187
- Publication date Jan 9, 2025
- Invention And Collaboration Laboratory, Inc.
- Chao-Chun Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Skew Cell Architecture
- Publication number 20250015133
- Publication date Jan 9, 2025
- ARM Limited
- Sriram Thyagarajan
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
FERROELECTRIC SEMICONDUCTOR DEVICE AND METHOD OF EXTRACTING DEFECT...
- Publication number 20250015184
- Publication date Jan 9, 2025
- Samsung Electronics Co., Ltd.
- Hagyoul BAE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20250016977
- Publication date Jan 9, 2025
- SK HYNIX INC.
- Jun Sik KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF
- Publication number 20250015161
- Publication date Jan 9, 2025
- UNITED MICROELECTRONICS CORP.
- Wei-Hsuan Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20250015175
- Publication date Jan 9, 2025
- RENESAS ELECTRONICS CORPORATION
- Yoshinori KAYA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20250006723
- Publication date Jan 2, 2025
- UNITED MICROELECTRONICS CORP.
- ZHIBIAO ZHOU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERAL GALLIUM OXIDE TRANSISTOR AND METHOD OF MANUFACTURING THE SAME
- Publication number 20250006838
- Publication date Jan 2, 2025
- POWER CUBESEMI INC.
- Tai Young KANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TECHNOLOGIES FOR BARRIER LAYERS IN PEROVSKITE TRANSISTORS
- Publication number 20250006841
- Publication date Jan 2, 2025
- Intel Corporation
- Arnab Sen Gupta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Field Effect Transistor Device with Blocking Region
- Publication number 20250006793
- Publication date Jan 2, 2025
- SOOCHOW UNIVERSITY
- Mingxiang Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING MEMORY DEVICE
- Publication number 20250008738
- Publication date Jan 2, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chieh-Fang Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NEGATIVE CAPACITANCE FIELD EFFECT TRANSISTOR (NCFET) DEVICES
- Publication number 20250006840
- Publication date Jan 2, 2025
- Intel Corporation
- Rachel A. Steinhardt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEPLETION MODE FERROELECTRIC TRANSISTORS
- Publication number 20250006239
- Publication date Jan 2, 2025
- Iu-Meng Tom Ho
- G11 - INFORMATION STORAGE
Information Patent Application
HIGH VOLTAGE TRANSISTOR STRUCTURE AND METHODS OF FORMATION
- Publication number 20250006731
- Publication date Jan 2, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kau-Chu LIN
- H01 - BASIC ELECTRIC ELEMENTS

comprising a gate to body connection

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Three-dimensional semiconductor device and method of fabricating th...

Device architectures with tensile and compressive strained substrates

Flash memory device with three dimensional half flash structure and...

Ferroelectric devices including a single crystalline ferroelectric...

Integrated circuit devices and fabrication techniques

Semiconductor devices and methods of manufacturing thereof

Semiconductor structure and associated fabricating method

Semiconductor doped region with biased isolated members

Semiconductor device and manufacturing method thereof

Semiconductor device including gate oxide layer

Method and related apparatus for reducing gate-induced drain leakag...

Mechanisms for forming FinFET device

Semiconductor device

Stacked ferroelectric structure

Complementary metal oxide semiconductor device

High-voltage transistor and method for fabricating the same

Semiconductor device and method for fabricating the same

Semiconductor device

Semiconductor device and electronic device

Semiconductor device having a gate electrode with a top peripheral...

Negative differential resistance device

Memory cell of charge-trapping non-volatile memory

Three-dimensional memory device

LDMOS with polysilicon deep drain

Elevationally-extending transistors, devices comprising elevational...

Semiconductor device including a superlattice and an asymmetric cha...

Memory device structure and manufacturing method thereof

Method of manufacturing a semiconductor device and a semiconductor...

Transistor structure with multi-layer field plate and related method

Layered structure, semiconductor device including the same, and man...

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE

Planar JFET Device with Reduced Gate Resistance

SEMICONDUCTOR DEVICE WITH MULTIPLE GATES AND RELATED METHOD

MOS TRANSISTOR HAVING SUBSTANTIALLY PARALLELPIPED-SHAPED INSULATING...

Laterally-Diffused Metal-Oxide Semiconductor Devices with Reduced G...

NANOMAGNET FOR SPIN-BASED QUANTUM-DOT QUBIT

MEMORY DEVICE

SEMICONDUCTOR MEMORY DEVICE

Area Efficient Fin-Based Laterally-Diffused Metal-Oxide Semiconduct...

HIGH VOLTAGE FIELD EFFECT TRANSISTORS WITH DIFFERENT SIDEWALL SPACE...

3T MEMORY WITH ENHANCED SPEED OF OPERATION AND DATA RETENTION

SEMICONDUCTOR DEVICE BASED ON DIELECTRIC MATERIAL CONTAINING METAL...

HEMT TRANSISTOR WITH ADJUSTED GATE-SOURCE DISTANCE, AND MANUFACTURI...

SEMICONDUCTOR DEVICE AND A METHOD FOR FABRICATING THE SAME

MEMORY STRUCTURE OF THREE-DIMENSIONAL NOR MEMORY STRINGS OF CHANNEL...

FERROELECTRIC SEMICONDUCTOR DEVICE INCLUDING MEMORY CELL HAVING A T...

TRANSISTOR STRUCTURE WITH MULTIPLE VERTICAL THIN BODIES

Skew Cell Architecture

FERROELECTRIC SEMICONDUCTOR DEVICE AND METHOD OF EXTRACTING DEFECT...

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE

LATERAL GALLIUM OXIDE TRANSISTOR AND METHOD OF MANUFACTURING THE SAME

TECHNOLOGIES FOR BARRIER LAYERS IN PEROVSKITE TRANSISTORS

Field Effect Transistor Device with Blocking Region

METHOD OF FORMING MEMORY DEVICE

NEGATIVE CAPACITANCE FIELD EFFECT TRANSISTOR (NCFET) DEVICES

DEPLETION MODE FERROELECTRIC TRANSISTORS

HIGH VOLTAGE TRANSISTOR STRUCTURE AND METHODS OF FORMATION