Number | Date | Country | Kind |
---|---|---|---|
59-63567 | Mar 1984 | JPX |
This is a continuation of 07/080,487, filed 07/31/1987, now abandoned, which was a continuation of 06/717,694, filed 03,29/1985, now abandoned.
Number | Name | Date | Kind |
---|---|---|---|
3327182 | Kisinko | Jun 1967 | |
3393349 | Huffman | Jul 1968 | |
3791024 | Boleky, III | Feb 1974 | |
3832247 | Saddler et al. | Aug 1974 | |
3858237 | Sawazaki et al. | Dec 1974 | |
3865649 | Beasom | Feb 1975 | |
3871007 | Wakamiya et al. | Mar 1975 | |
3990102 | Okuhara et al. | Nov 1976 | |
4079506 | Suzuki et al. | Mar 1978 | |
4146905 | Appels et al. | Mar 1979 | |
4242697 | Berthold et al. | Dec 1980 | |
4286280 | Sugawara | Aug 1981 | |
4472729 | Shibata et al. | Sep 1984 | |
4502913 | Lechaton et al. | Mar 1985 |
Number | Date | Country |
---|---|---|
53-147477 | Dec 1978 | JPX |
55-128862 | Oct 1980 | JPX |
56-58269 | May 1981 | JPX |
57-130480 | Aug 1982 | JPX |
58-44740 | Mar 1983 | JPX |
Entry |
---|
Abbas et al., Silicon-On-Sapphire-On-Silicon Integrated Circuit Structure, IBM Technical Disclosure Bulletin, vol. 16, No. 3, pp. 1027-1029, Aug. 1973. |
International Rectifier.TM., Power MOSFET Application and Product Data, Hexfet Databook, pp. 1, 31-33, 1981. |
Kamins, Silicon Integrated Circuits Using Beam-Recrystallized Polysilicon, Hewlett-Packard Journal, pp. 10-13, Aug. 1982. |
Gallagher, Silicon on Insulator Attains High Yields by Boundary Control, Electronics International, pp. 85-86, May 5, 1983. |
Imai et al., Crystalline Quality of Silicon Layer Formed by FIPOS Technology, Journal of Crystal Growth 63, pp. 547-553, 1983. |
Pinizzoto, Microstructural Defects in Laser Recrystallized, Graphite Strip Heater Recrystallized and Buried Oxide Silicon-On-Insulator Systems: A Status Report, Journal of Crystal Growth 63, pp. 559-582, 1983. |
Number | Date | Country | |
---|---|---|---|
Parent | 80487 | Jul 1987 | |
Parent | 717694 | Mar 1985 |