Claims
- 1. A semiconductor device comprising:a gate-insulating film formed on a semiconductor substrate; a plurality of gate electrodes comprised of P- and N-type polysilicon thin films and thin conductive films formed over the gate-insulating film, the P-type polysilicon thin film being doped with a P-type impurity at a concentration in excess of 2E19 atoms/cm3 and the N-type polysilicon thin film being doped with an N-type impurity at a concentration in excess of 2E19 atoms/cm3 to prevent depletion layers from being formed in the P- and N-type polysilicon thin films when a voltage is applied between each of the conductive thin films and the semiconductor substrate; and source and drain regions formed over the semiconductor substrate in spaced-apart relation to one another and disposed on opposite sides of the gate electrodes.
- 2. A semiconductor device comprising:a gate insulating film disposed on a surface of a semiconductor substrate; a gate electrode disposed on the gate insulating film and having a polysilicon film containing B or BF2 impurity ions and a silicide film disposed on the polysilicon film; a dielectric film disposed over the whole surface of the semiconductor substrate and the gate electrode; and source and drain regions containing B or BF2 impurity ions and disposed in the surface of the semiconductor substrate.
- 3. A semiconductor device according to claim 2; further comprising a planarized BPSG interlayer film disposed on the dielectric film.
- 4. A semiconductor device according to claim 2; wherein the dielectric film comprises a CVD-grown dielectric film having a thickness of 5 to 1000 Å.
- 5. A semiconductor device according to claim 2; wherein the gate insulating film has a thickness of 30 to 200 Å; and wherein the gate electrode has a minimum length of 1.0 μm.
Priority Claims (3)
Number |
Date |
Country |
Kind |
7-066403 |
Mar 1995 |
JP |
|
7-136963 |
Jun 1995 |
JP |
|
7-304781 |
Nov 1995 |
JP |
|
Parent Case Info
The present application is a divisional application based on prior U.S. application Ser. No. 08/620,928, filed on Mar. 22, 1996, now U.S. Pat. No. 6,465,295 which is hereby incorporated by reference, and priority thereto for common subject matter is hereby claimed.
US Referenced Citations (1)
Number |
Name |
Date |
Kind |
5512502 |
Ootsuka et al. |
Apr 1996 |
A |