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H01L21/823807

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

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H01L21/823807with a particular manufacturing method of the channel structures

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Self-aligned hybrid substrate stacked gate-all-around transistors
- Patent number 12,176,348
- Issue date Dec 24, 2024
- International Business Machines Corporation
- Ruqiang Bao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Source/drain feature separation structure
- Patent number 12,178,032
- Issue date Dec 24, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Wen-Chun Keng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stacked semiconductor device with nanostructure channels
- Patent number 12,170,227
- Issue date Dec 17, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chien-Te Tu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate-all-around device with trimmed channel and dipoled dielectric...
- Patent number 12,170,231
- Issue date Dec 17, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chung-Wei Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit and manufacturing method of the same
- Patent number 12,170,277
- Issue date Dec 17, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Kam-Tou Sio
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of fabricating the same
- Patent number 12,170,281
- Issue date Dec 17, 2024
- Samsung Electronics Co., Ltd.
- Sun Ki Min
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming bottom dielectric isolation layers
- Patent number 12,170,230
- Issue date Dec 17, 2024
- Applied Materials, Inc.
- SanKuei Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Isolation layers in stacked semiconductor devices
- Patent number 12,166,037
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Wei-Lun Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,159,938
- Issue date Dec 3, 2024
- Samsung Electronics Co., Ltd.
- Hyojin Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin-based field effect transistors
- Patent number 12,154,903
- Issue date Nov 26, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Matthias Passlack
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Damage implantation of cap layer
- Patent number 12,154,987
- Issue date Nov 26, 2024
- Texas Instruments Incorporated
- Mahalingam Nandakumar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tiered-profile contact for semiconductor
- Patent number 12,148,663
- Issue date Nov 19, 2024
- International Business Machines Corporation
- Kisik Choi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method
- Patent number 12,148,810
- Issue date Nov 19, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Shih-Hang Chiu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated hybrid standard cell structure with gate-all-around device
- Patent number 12,148,745
- Issue date Nov 19, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chih-Hao Wang
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
FinFET devices and methods of forming the same
- Patent number 12,148,673
- Issue date Nov 19, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chih-Hao Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device and a semiconductor...
- Patent number 12,142,533
- Issue date Nov 12, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chao-Ching Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Replacement contact process
- Patent number 12,142,534
- Issue date Nov 12, 2024
- Applied Materials, Inc.
- Sankuei Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor gate structures and methods of forming the same
- Patent number 12,142,659
- Issue date Nov 12, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Hsin-Yi Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,142,607
- Issue date Nov 12, 2024
- Samsung Electronics Co., Ltd.
- Cheol Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor gate structures and methods of forming the same
- Patent number 12,142,655
- Issue date Nov 12, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Shih-Yao Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure
- Patent number 12,142,638
- Issue date Nov 12, 2024
- Taiwan Semiconductor Manufacturing Company Ltd.
- Meng-Hsuan Hsiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Contact over active gate structures for advanced integrated circuit...
- Patent number 12,142,667
- Issue date Nov 12, 2024
- Intel Corporation
- Andrew W. Yeoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure having PMOS transistor with a channel layer...
- Patent number 12,131,953
- Issue date Oct 29, 2024
- CHANGXIN MEMORY TECHNOLOGIES, INC.
- Juanjuan Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bonding and isolation techniques for stacked transistor structures
- Patent number 12,132,079
- Issue date Oct 29, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Kuan-Kan Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate structures for semiconductor devices
- Patent number 12,131,955
- Issue date Oct 29, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chung-Liang Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electrostatic discharge diode having dielectric isolation layer
- Patent number 12,119,341
- Issue date Oct 15, 2024
- International Business Machines Corporation
- Huimei Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and method for forming semiconductor structure
- Patent number 12,119,350
- Issue date Oct 15, 2024
- CHANGXIN MEMORY TECHNOLOGIES, INC.
- Kui Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate all around transistors with different threshold voltages
- Patent number 12,119,379
- Issue date Oct 15, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Jhon Jhy Liaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forming N-type and P-type horizontal gate-all-around devices
- Patent number 12,113,067
- Issue date Oct 8, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated dipole region for transistor
- Patent number 12,112,951
- Issue date Oct 8, 2024
- Applied Materials, Inc.
- Srinivas Gandikota
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
VARIABLE VERTICAL-STACK NANOSHEET FOR GATE-ALL-AROUND DEVICES
- Publication number 20240429236
- Publication date Dec 26, 2024
- QUALCOMM Incorporated
- Shreesh Narasimha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20240429278
- Publication date Dec 26, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kuan-Ting PAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
USER MODEL-BASED DATA LOSS PREVENTION
- Publication number 20240430308
- Publication date Dec 26, 2024
- ARMORBLOX LLC
- Chetan Anand
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
GATE-ALL-AROUND (GAA) FIELD-EFFECT TRANSISTOR (FET) DEVICE HAVING F...
- Publication number 20240429300
- Publication date Dec 26, 2024
- QUALCOMM Incorporated
- Shreesh Narasimha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORKSHEET DEVICES WITH DIELECTRIC SPINE AT CELL BOUNDARY
- Publication number 20240429276
- Publication date Dec 26, 2024
- Intel Corporation
- Sukru Yemenicioglu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROTECTION DIODE FOR STACKED FIELD EFFECT TRANSISTOR
- Publication number 20240429226
- Publication date Dec 26, 2024
- International Business Machines Corporation
- HUIMEI ZHOU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BACKSIDE EPITAXY FOR SEMICONDUCTOR STRUCTURES
- Publication number 20240429283
- Publication date Dec 26, 2024
- International Business Machines Corporation
- Alexander Reznicek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE INCLUDING DIFFERENT DEVICES AND METHODS FOR...
- Publication number 20240429299
- Publication date Dec 26, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Cheng-Ting CHUNG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED TRANSISTOR HAVING AN OVER-THE-CHANNEL ETCH-STOP ISOLATIO...
- Publication number 20240429280
- Publication date Dec 26, 2024
- International Business Machines Corporation
- Juntao Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL GATES FOR SEMICONDUCTOR DEVICES AND METHOD THEREOF
- Publication number 20240429281
- Publication date Dec 26, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yu-Sheng Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20240421186
- Publication date Dec 19, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ta-Chun LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN-BASED FIELD EFFECT TRANSISTOR (FET) SOURCE/DRAIN STRAIN TO ENHA...
- Publication number 20240421214
- Publication date Dec 19, 2024
- QUALCOMM Incorporated
- Xia LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOURCE/DRAIN PROTECTION USING A BACKSIDE PLACEHOLDER
- Publication number 20240421037
- Publication date Dec 19, 2024
- International Business Machines Corporation
- Lijuan Zou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED MULTI-GATE DEVICE WITH AN INSULATING LAYER BETWEEN TOP AND...
- Publication number 20240413220
- Publication date Dec 12, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wan Chen Hsieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD-EFFECT TRANSISTORS (FETS) EMPLOYING THERMAL EXPANSION OF WORK...
- Publication number 20240413219
- Publication date Dec 12, 2024
- QUALCOMM Incorporated
- Xia Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE WITH REDUCED LEAKAGE CURRENT AND METHOD FOR...
- Publication number 20240413223
- Publication date Dec 12, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chung-En TSAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HEAT SINK FOR STACKED MULTI-GATE DEVICE
- Publication number 20240413039
- Publication date Dec 12, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Che Chi Shih
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED FETs WITH BACKSIDE ANGLE CUT
- Publication number 20240413084
- Publication date Dec 12, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240413252
- Publication date Dec 12, 2024
- Samsung Electronics Co., Ltd.
- Seungmin SONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED TRANSISTORS WITH METAL VIAS
- Publication number 20240413085
- Publication date Dec 12, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED MULTI-GATE DEVICE WITH DIFFUSION STOPPING LAYER AND MANUFAC...
- Publication number 20240413155
- Publication date Dec 12, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chien-Yu LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NON-PLANAR TRANSISTOR STRUCTURES AND METHODS OF MANUFACTURING THEREOF
- Publication number 20240405022
- Publication date Dec 5, 2024
- TOKYO ELECTRON LIMITED
- Eric Chih-Fang LIU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR ISOLATION STRUCTURES AND METHODS OF FORMING THE SAME
- Publication number 20240405021
- Publication date Dec 5, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Kuan-Ting Pan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHODS OF MANUFACTURE
- Publication number 20240395875
- Publication date Nov 28, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Hsin-Yi Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME
- Publication number 20240395899
- Publication date Nov 28, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Cherng-Rong HO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH GERMANIUM-BASED CHANNEL
- Publication number 20240395812
- Publication date Nov 28, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Cheng-Ming LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Structure and Method for Forming the Same
- Publication number 20240395665
- Publication date Nov 28, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jui-Lin Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT AND MANUFACTURING METHOD OF THE SAME
- Publication number 20240395793
- Publication date Nov 28, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kam-Tou SIO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR WITH ISOLATION STRUCTURE AND RELATED METHOD
- Publication number 20240395813
- Publication date Nov 28, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chih-Hsiung PENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Fin-Based Field Effect Transistors
- Publication number 20240395818
- Publication date Nov 28, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Matthias PASSLACK
- H01 - BASIC ELECTRIC ELEMENTS

with a particular manufacturing method of the channel structures

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Self-aligned hybrid substrate stacked gate-all-around transistors

Source/drain feature separation structure

Stacked semiconductor device with nanostructure channels

Gate-all-around device with trimmed channel and dipoled dielectric...

Integrated circuit and manufacturing method of the same

Semiconductor device and method of fabricating the same

Methods of forming bottom dielectric isolation layers

Isolation layers in stacked semiconductor devices

Semiconductor device

Fin-based field effect transistors

Damage implantation of cap layer

Tiered-profile contact for semiconductor

Semiconductor device and method

Integrated hybrid standard cell structure with gate-all-around device

FinFET devices and methods of forming the same

Method of manufacturing a semiconductor device and a semiconductor...

Replacement contact process

Transistor gate structures and methods of forming the same

Semiconductor device

Transistor gate structures and methods of forming the same

Semiconductor structure

Contact over active gate structures for advanced integrated circuit...

Semiconductor structure having PMOS transistor with a channel layer...

Bonding and isolation techniques for stacked transistor structures

Gate structures for semiconductor devices

Electrostatic discharge diode having dielectric isolation layer

Semiconductor structure and method for forming semiconductor structure

Gate all around transistors with different threshold voltages

Forming N-type and P-type horizontal gate-all-around devices

Integrated dipole region for transistor

Patents Applicationslast 30 patents

VARIABLE VERTICAL-STACK NANOSHEET FOR GATE-ALL-AROUND DEVICES

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

USER MODEL-BASED DATA LOSS PREVENTION

GATE-ALL-AROUND (GAA) FIELD-EFFECT TRANSISTOR (FET) DEVICE HAVING F...

FORKSHEET DEVICES WITH DIELECTRIC SPINE AT CELL BOUNDARY

PROTECTION DIODE FOR STACKED FIELD EFFECT TRANSISTOR

BACKSIDE EPITAXY FOR SEMICONDUCTOR STRUCTURES

SEMICONDUCTOR STRUCTURE INCLUDING DIFFERENT DEVICES AND METHODS FOR...

INTEGRATED TRANSISTOR HAVING AN OVER-THE-CHANNEL ETCH-STOP ISOLATIO...

METAL GATES FOR SEMICONDUCTOR DEVICES AND METHOD THEREOF

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

FIN-BASED FIELD EFFECT TRANSISTOR (FET) SOURCE/DRAIN STRAIN TO ENHA...

SOURCE/DRAIN PROTECTION USING A BACKSIDE PLACEHOLDER

STACKED MULTI-GATE DEVICE WITH AN INSULATING LAYER BETWEEN TOP AND...

FIELD-EFFECT TRANSISTORS (FETS) EMPLOYING THERMAL EXPANSION OF WORK...

SEMICONDUCTOR STRUCTURE WITH REDUCED LEAKAGE CURRENT AND METHOD FOR...

HEAT SINK FOR STACKED MULTI-GATE DEVICE

STACKED FETs WITH BACKSIDE ANGLE CUT

SEMICONDUCTOR DEVICE

STACKED TRANSISTORS WITH METAL VIAS

STACKED MULTI-GATE DEVICE WITH DIFFUSION STOPPING LAYER AND MANUFAC...

NON-PLANAR TRANSISTOR STRUCTURES AND METHODS OF MANUFACTURING THEREOF

TRANSISTOR ISOLATION STRUCTURES AND METHODS OF FORMING THE SAME

SEMICONDUCTOR DEVICE AND METHODS OF MANUFACTURE

SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME

SEMICONDUCTOR DEVICE WITH GERMANIUM-BASED CHANNEL

Semiconductor Structure and Method for Forming the Same

INTEGRATED CIRCUIT AND MANUFACTURING METHOD OF THE SAME

FIELD EFFECT TRANSISTOR WITH ISOLATION STRUCTURE AND RELATED METHOD

Fin-Based Field Effect Transistors