Claims
- 1. A semiconductor device having a memory circuit comprising:a plurality of first bit line pairs; a plurality of word lines; a plurality of dynamic memory cells each disposed at the intersection of one bit line of the first bit line pair and the word line; amplifying circuits each formed of a latch circuit consisting of MOSFETs of a first and second conductivity types having a pair of input/output nodes corresponding to the first bit line pair; a second bit line pair which is provided commonly to the input/output node pairs of the latch circuits; and pairs of switching MOSFETs of the first conductivity type which connect the input/output node pair of the latch circuits to the second bit line pair in response to the reception of a selection signal, wherein said switching MOSFETs have their threshold voltage set smaller in terms of absolute value than the threshold voltage of the MOSFETs of the first conductivity type of the latch circuits, said selection signal having its level of turning off the switching MOSFETs set smaller in terms of absolute value than the source voltage of the switching MOSFETs.
- 2. A semiconductor device according to claim 1, wherein said latch circuit is adapted to receive a voltage difference between a voltage read out of a memory cell onto one bit line of the bit line pair and a precharge voltage on another bit line and amplify the voltage differences to have a first and second voltages derived from power voltages in response to the word line selecting operation, and provided in operation with an overdrive period at the commencement of amplifying operation until the bit lines reach the first or second voltage, in which period the latch circuit is supplied with an operation voltage which is greater in terms of absolute value than the first or second voltage.
Priority Claims (1)
Number |
Date |
Country |
Kind |
2000-105345 |
Apr 2000 |
JP |
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Parent Case Info
This is a divisional of application Ser. No. 09/820,972, filed Mar. 30, 2001, now U.S. Pat. No. 6,480,425.
US Referenced Citations (14)
Foreign Referenced Citations (3)
Number |
Date |
Country |
2-244756 |
Sep 1990 |
JP |
3-147595 |
Jun 1991 |
JP |
10-200073 |
Jul 1998 |
JP |