Patent Application
20080026598
The above as well as the other objects, features and advantages of the present invention will be more apparent from the following detailed description taken in conjunction with the accompanying drawings, in which:
a is an explanatory view illustrating an external appearance of a semiconductor manufacturing device according to the present invention;
b is an explanatory view illustrating an arrangement status of a supply nozzle and an exhaust nozzle of the semiconductor manufacturing device according to the present invention;
a is an exploded perspective view illustrating a susceptor according to the present invention;
b and
a is an explanatory sectional view illustrating the semiconductor manufacturing device including the susceptor according to the present invention;
b is an enlarged sectional view of an upper portion of
a and 4b are explanatory sectional views illustrating a driving device of the susceptor according to the present invention;
c is an explanatory view illustrating a cooling device of a driving shaft according to the present invention;
a and 5b are explanatory sectional views illustrating a loading status of a heater according to the present invention;
a is an explanatory view illustrating a heating portion of the heater according to the present invention;
b is an explanatory view illustrating a heating pattern of the heater according to the present invention;
c is an explanatory view illustrating the semiconductor substrate and the nozzles arranged at the heating portion of the heater according to the present invention;
a is an explanatory view illustrating an exhaust nozzle according to the present invention;
b is an explanatory sectional view illustrating a lifting device according to the present invention; and
c is an explanatory sectional view illustrating a lifting of the exhaust nozzle, a connection of the susceptor, and an insertion of the heater according to the present invention.
A preferred embodiment of the invention will be described in detail below with reference to the accompanying drawings.
As shown in
Each element of the susceptors 18 and the driving device 26 of the semiconductor device will be described in detail below (note
Firstly, in each susceptor 18, a support panel 14 is mounted at the back of the holder 10 and elastically attached through an elastic attaching means 12 so as to support the semiconductor substrate 100 together with the holder 10 by contacting with the peripheral of the back of the semiconductor substrate 100.
Here, in each susceptor 18, an antifouling means is formed at the circumference of the susceptor 18 between the supporting roller 20 and the mounted semiconductor substrate 100 in order to prevent the penetration of an external particle in the direction of the mounted semiconductor substrate 100.
Concretely, the antifouling means includes an antifouling ring 30 protruded from the circumference of the susceptor 18 in the direction of the semiconductor substrate 100 in respect to the driving circumference portion 28 and the supporting rollers 20.
Moreover, a purge gas supplying portion 36 of the antifouling means for supplying a purge gas to a space between the opposed susceptors 18 is formed in the reaction chamber 24. Also, a gas curtain portion 34 is formed in the antifouling means.
Furthermore, another purge gas supplying portion 38 is formed at the reaction chamber 24 in order to supply the purge gas for disturbing the evaporation of the back of the semiconductor substrate 100 from the opposed susceptors 18 to the back of the semiconductor substrate 100.
Continuously, the driving device 26 includes a supporting frame 40 formed at the outside of the reaction chamber 24, a transferring panel 44 for sliding along a rail 42 formed at the supporting frame 40, a transferring device 46 for going and returning the transferring panel 44 formed at the supporting frame 40, a driving motor 50 having a driving shaft 48 for rotating the driving roller 20′ formed at the transferring panel 44, and a connecting means 52 connected to the driving shaft 48.
More concretely, the transferring device 46 includes a transferring motor 54 formed at the supporting frame 40, a transferring bolt 56 as a driving shaft connected to the transferring motor 54, a transferring nut 58 coupled to the transferring bolt 56, and a supporting rod 60 coupled to the transferring nut 58 together with a buffer spring 61 and coupled to the transferring panel 44.
The driving shaft 48 is spline-coupled to the connection means 52. Here, a guide tapper surface 62 for inducing the spline-couple is formed at a front end of driving shaft 48.
In the meantime, the driving shaft 48 is penetrated through the reaction chamber 24. Here, in order to maintain an airtight between the driving shaft 48 and the reaction chamber 24, a reaction chamber mounting ring 64 is formed at a through hole of the reaction chamber 24, a sealing means 66 for sealing the outer circumference of the driving shaft 48 is separated from the reaction chamber 24, and bellows tube 68 for maintaining the moving of the driving shaft 48 and sealing the outer circumference of the driving shaft 48 between the sealing means 66 and the reaction chamber mounting ring 64.
Also, the driving shaft 48 is made of an insulating material so as to prevent a heat from transmitting to the driving motor 50 and is spline-coupled to the rotating shaft of the driving motor 50 through a coupler 72.
Moreover, the driving shaft 48 includes a cooling device. The cooling device includes a cooling waterway 74 and a cooling water connector 75 of a ring type for supplying and discharging the cooling water to the cooling waterway 74 of the rotated driving shaft 48 formed at the gateway of the cooling waterway 74.
Each element of the heater 80 including the mounting device of the semiconductor device will be described in detail below (note
Firstly, in order to heat the opposed semiconductor substrates 100 in the direction of the back of each semiconductor substrates, the heater 80 has a heating surface for receiving the whole area of the semiconductor substrates 100. Also, the heating region provided by the heating surface has a separated power supplying line and is concentric to the semiconductor substrates 100. The heating region includes a central portion 102 for heating the center of the semiconductor substrates 100, a peripheral portion 104 for heating the outside of the center of the semiconductor substrates 100 and surrounding the central portion 102, an outer circumference portion 106 for heating the outer circumference of the semiconductor substrates 100 and surrounding the peripheral portion 104, and a buffer portion 108 surrounding the outer circumference portion 106 and for heating it so as to alleviate the interference between the outer circumference portion 106 and the room temperature.
Concretely, the peripheral portion 104, the outer circumference portion 106 and the buffer portion 108 divide into at two vertical partitions corresponding to the upper and lower portions of the semiconductor substrates 100 respectively.
The upper portion of the buffer portion 108 connected to the gateway of the supply nozzle 76 of the reaction gas serves to preheat the reaction gas prior to injecting it.
The upper portion of the outer circumference portion 106 corresponding to the gateway of the supply nozzle 76 of the reaction gas and the space between the semiconductor substrates 100 serves to heat the reaction gas supplied to the semiconductor substrates 100 next to injecting it.
In the meantime, the heating region of the heater 80 further includes a plurality of winding resistance heating lines 110 having a supplying line and a grounding line adjacent to each other.
The heater 80 further includes a loading device 92 inserted into the back of the semiconductor substrates 100 mounted to the susceptors 18 after mounting the susceptors 18 to the reaction chamber and the heater 80 is hermetically mounted to the reaction chamber 24 by means of a bellows cover 87.
Concretely, the bellows cover 87 includes a reaction chamber mounting ring 112 surrounding the circumference of a through hole of the reaction chamber 24 in order to load the heater 80, a heater mounting ring 114 combined with the loading device 92 inserted into the back of the semiconductor substrates 100, a bellows tube 86 for sealing the space between the reaction chamber mounting ring 112 and the heat mounting ring 114 and allowing the moving thereof through the loading device 92, a guide rail 116 for attaching and deattaching the heater 80 formed at the heater mounting ring 114. Here, the heater 80 is slid along the guide rail 116 and coupled to the heater mounting ring 114.
Also, the heater 80 further includes a heater cover 81 for maintaining the airtight between the heater 80 and the reaction chamber 24. The heater cover 81 is a transparent cover such as a quartz cover and so on. The outer circumference of the heater cover 81 is inserted between the heat mounting ring 114 and the heater 80 in order to maintain the airtight between the heater 80 and the reaction chamber 24.
Each element of the exhaust nozzle 78 including the lifting device 90 of the semiconductor device will be described in detail below (note
Firstly, the exhaust nozzle 78 separately mounted to the reaction chamber 24 includes an exhaust pipe 79 penetrated through the reaction chamber 24 and formed at the outside thereof and a bellows cover 89 for maintaining the moving of the exhaust pipe 79 and performing the airtight thereof formed between the exhaust pipe 79 and the reaction chamber 24.
Concretely, the bellows cover 89 of the exhaust nozzle 78 includes a reaction chamber mounting ring 124 surrounding the circumference of a through hole of the reaction chamber 24 for arrangement of the exhaust pipe 79 of the exhaust nozzle 78, a bracket mounting ring 130 mounted to a coupling bracket 126 of the lifting device 90 for lifting the exhaust nozzle 78 and having a packing 128 for sealing the outer circumference of the exhaust pipe 79, and a bellows tube 88 for sealing the space between the reaction chamber mounting ring 124 and the bracket mounting ring 130 and allowing the lifting of the exhaust pipe 79 through the loading device 92.
In the meantime, the lifting device 90 includes a supporting frame 132 formed at the outside of the reaction chamber 24, a lifting panel 136 for sliding along a rail 134 formed at the supporting frame 132, the coupling bracket 126 mounted to the lifting panel 136 and coupled to the exhaust pipe 79 of the exhaust nozzle 78, a lifting motor 138 formed at the supporting frame 132, a lifting bolt 140 as a driving shaft connected to the lifting motor 138, a lifting nut 142 coupled to and lifted up and down the lifting bolt 140 and combined with the lifting panel 136.
Here, the standby chamber 120 for standing by the exhaust nozzle 78 is formed at the lower portion of the reaction chamber 24.
Also, a purge exhaust pipe 122 for removing the purge gas is connected to the standby chamber 120.
A semiconductor manufacturing method for processing the opposed semiconductor substrates 100 according to the present invention will be described in detail below.
The semiconductor manufacturing method for processing the opposed semiconductor substrates according to the present invention includes the steps of loading a pair of the opposed semiconductor substrates on the reaction chamber for providing an airtight process space, connecting the driving shaft to a pair of driving roller among the support rollers of the susceptors in order to process the opposed semiconductor substrates, approaching the heating surface of the heater to the back of the semiconductor substrates, inserting the exhaust nozzle for surrounding the lower portion of the semiconductor substrate into the space between the opposed holders, and processing the opposed semiconductor substrates.
Here, in the processing device loading step, the driving shaft connected to the driving roller, the heater moved toward the back of the semiconductor substrate, and the exhaust nozzle inserted into the space between the opposed holders maintain the moving and the airtight thereof respectively.
In the meantime, the processing step further includes a back side evaporation disturbing step for disturbing the evaporation of the back of the semiconductor substrate by supplying the purge gas to each back side of the opposed semiconductor substrates.
Also, the processing step further includes an antifouling step for preventing the penetration of the minute dust in the direction of the inside of the opposed susceptors 18 by supplying the purge gas to the outer circumference of the each semiconductor substrate and forming the gas curtain portion 34 between each susceptor and the supporting rollers located at the circumference of each susceptor.
Also, the processing step further includes a heat treating step for heating the opposed semiconductor substrates 100 in the direction of the back of each semiconductor substrates through the heater 80 having the heating surface for receiving the whole area of the semiconductor substrates 100. Here, the heating region concentric to the semiconductor substrates includes a central portion 102 for heating the center of the semiconductor substrates 100, a peripheral portion 104 for heating the outside of the center of the semiconductor substrates 100 and surrounding the central portion 102, an outer circumference portion 106 for heating the outer circumference of the semiconductor substrates 100 and surrounding the peripheral portion 104, and a buffer portion 108 surrounding the outer circumference portion 106 and for heating it so as to alleviate the interference between the outer circumference portion 106 and the room temperature. Here, the peripheral portion 104, the outer circumference portion 106 and the buffer portion 108 divide into at least two vertical partitions corresponding to the upper and lower portions of the semiconductor substrates 100 respectively.
The upper portion of the buffer portion 108 connected to the gateway of the supply nozzle 76 of the reaction gas allows the reaction gas to preheat and then, the preheated gas is injected.
The upper portion of the outer circumference portion 106 corresponding to the gateway of the supply nozzle 76 of the reaction gas and the space between the semiconductor substrates 100 allows the injected gas to heat and then, the heated gas is supplied to the semiconductor substrates 100.
As described above, the semiconductor manufacturing device according to the present invention includes a reaction chamber 24 for providing an airtight process space; a boat 22 including a pair of susceptors 18 as the processing device mounted to the reaction chamber; a driving device 26 for rotating the susceptors 18; the heater 80; the loading device 92 for inserting the heaters 80 into an inner space of the susceptors 18; the supply nozzle 76 and the exhaust nozzle 78; and the lifting device 90 for inserting the exhaust nozzle 78 into the space between the holders 10.
Each element of the semiconductor device according to the present invention will be more minutely described below.
Firstly, as shown in
The reaction gas is flowed from the upper portion toward the lower portion of the reaction chamber 24. H ere, the supply nozzle 76 is formed at the upper portion thereof and the exhaust nozzle 78 is formed at the lower portion thereof.
The heater 80 for providing the high temperature and the driving device 26 connected to the driving rolloers 20′ of the susceptors 18 are formed at both sides of the reaction chamber 24.
The boat includes a boat cap 82 for blocking the rear of the susceptors 18 and providing an airtight process space. Here, the boat cap 82 is mounted on a moving rail 84.
The semiconductor substrate 100 is loaded on the holder 10 of the boat 22 by means of an end-effector (not shown) and then, the holder 10 is loaded on the susceptors by means of the end-effector.
As shown in
More concretely, as shown in
The susceptor 18 is in the shape of a convex dish in front in order to closely face the loaded semiconductor substrates 100. Here, the driving circumference portion 28 located at the outer circumference of the susceptor 18 and contacted with the supporting roller 20 is protruded.
The antifouling means for preventing the penetration of the minute dust surroundings the outer circumference of the susceptor 18 in the direction of the semiconductor substrate 100 in respect to the supporting rollers 20.
Here, the antifouling means includes the antifouling ring 30 protruded from the circumference of the susceptor 18 between the driving circumference portion 28 contacted with the supporting rollers 20 and the mounted semiconductor substrate 100.
That is, the antifouling ring 30 serves as a protrusion structure capable of coping with the penetration (penetration direction) of the minute dust.
Moreover, the purge gas supplying portion 36 of the antifouling means for supplying a purge gas to a space between the opposed susceptors 18 is formed in the reaction chamber 24. Also, a gas curtain portion 34 is formed in the antifouling means.
Furthermore, another purge gas supplying portion 38 is formed at the reaction chamber 24 in order to supply the purge gas for disturbing the evaporation of the back of the semiconductor substrate 100 from the opposed susceptors 18 to the back of the semiconductor substrate 100.
In order to form the gas curtain portion 34, the purge gas supplying portion is formed at the reaction chamber 24. Here, the kind of the purge gas is H2.
The purge gas injected into the reaction chamber 24 is discharged through the purge exhaust pipe 122 formed at the standby chamber 120.
In the meantime, where the semiconductor substrates 100 are loaded on the susceptors 18, the semiconductor substrates 100 keep standing and are opposed to each other. Here, the susceptors 18 can be rotated through the supporting rollers 20.
As shown in
The boat 22 is loaded on the reaction chamber 24 through the connecting means 52 and the driving device 26 is transferred, so that the connection is performed as shown in
At this time, the susceptors driving device 26 is isolated with the reaction chamber 24 through a bellows cover 69. That is, since the explosive purge gas such as the H2 gas is introduced, it is necessary to prevent the purge gas from being flowing out the reaction chamber 24. Also, in order to provide a low pressure (a vacuum) environment for treating the process thereof and prevent the outflow of the poison gas during processing thereof, it is necessary to seal it.
More concretely, the driving device 26 includes the supporting frame 40 formed at the outside of the reaction chamber 24 and the transferring panel 44 for sliding along the rail 42 formed at the supporting frame 40.
Also, the driving device 26 further includes the transferring device 46 for going and returning the transferring panel 44 formed at the supporting frame 40, the driving motor 50 having the driving shaft 48 for rotating the driving roller 20′ formed at the transferring panel 44, and the connecting means 52 connected to the driving shaft 48.
Here, in order to penetrate through the reaction chamber 24 and maintain the airtight between the driving shaft 48 and the reaction chamber 24, the reaction chamber mounting ring 64 is formed at the through hole of the reaction chamber 24, in that the driving shaft 48 is penetrated and moved and the sealing means 66 for sealing the outer circumference of the driving shaft 48 is separated from the reaction chamber 24.
The sealing means 66 for sealing the airtight of the rotating driving shaft 48 is made of a magnetic shield.
Also, the bellows tube 68 for maintaining the moving of the driving shaft 48 and sealing the outer circumference of the driving shaft 48 through the sealing means 66 is formed between the reaction chamber mounting ring 64.
Moreover, the transferring device 46 for moving the transferring panel 44 having the above devices includes the transferring motor 54 formed at the supporting frame 40, the transferring bolt 56 as the driving shaft connected to the transferring motor 54, and the transferring nut 58 for transforming the rotary motion into the rectilineal movement and performing the reciprocating motion coupled to the transferring bolt 56.
Furthermore, the supporting rod 60 is coupled to the transferring nut 58 together with the buffer spring 61. Here, the buffer spring 61 allows the supporting rod 60 to be elastically attached to the transferring nut 58 through the spring sheet. Accordingly, the supporting rod 60 and the transferring panel 44 are coupled to each other so at to complete the transferring device.
Here, in order to alleviate the connection tolerance or the connection impact on the moving the driving shaft 48, the transferring nut 58 is separated from the supporting rod 60 and the supporting rod 60 is elastically attached backward through the buffer spring 61. That is, during the connection of the driving shaft 48, as though the front end thereof is moved beyond the connection limit, the supporting rod 60 is retreated backward in that degree. At this time, the buffer spring 61 allows the gap moving of the supporting rod 60 to some degree and elastically supports the supporting rod 60.
The driving shaft 48 is spline-coupled to the connection means 52. Here, the guide tapper surface 62 for inducing the spline-couple is formed at the front end of driving shaft 48.
In the spline-coupling of the driving shaft 48 and the connection means 52, as though the groove and the protrusion of the driving shaft 48 and the connection means 52 are accurately not accorded with each other during the first connection thereof, they can be accorded with each other by the combination of the inducing slanting surface at the point of the completion time.
As shown in
The airtight is maintained by means of the susceptors driving device 26 connected to the connecting means 52 thereof, so that the minute control of the rotational frequency can be carried out according to the driving device directly connected to each susceptor.
Here, an amount of the heat can be transmitted to the driving shaft according to the driving of the susceptor 18 (for example, a process of high-temperature such as an epitaxial process). At this time, the magnetic force of the driving motor can be damaged owing to the heat transmitted to the driving shaft.
After all, it is necessary to prevent the heat from transmitting to the driving shaft and protect the damage of the heat of the driving shaft.
For this reason, the driving shaft 48 is made of an insulating material between the rotating shaft 70 of the driving motor 50 and spline-coupled to the rotating shaft of the driving motor 50 through the coupler 72.
Moreover, the driving shaft 48 includes the cooling device. The cooling device includes the cooling waterway 74 and the cooling water connector 75 of the ring type for supplying and discharging the cooling water to the cooling waterway 74 of the rotated driving shaft 48 formed at the gateway of the cooling waterway 74 (note
The cooling waterway 74 of the rotated driving shaft 48 has an entrance and an exit in that the cooling water connector 75 is formed.
The cooling water connector 75 includes a sealing portion (not shown) for sealing the outer circumference of the driving shaft 48. Also, since a connecting space connected to any of the entrance and the exit of the cooling waterway 74 is provided, as though the driving shaft is rotated, the cooling water connector 75 can be connected to the entrance and the exit of the cooling waterway 74 in order to supply and discharge the cooling water.
The cooling water supplied to the cooling waterway 74 allows the heat of the driving shaft to be cooled, thereby preventing a heat damage (a heat transformation) of the driving shaft.
Each element of the heater 80 including the loading device of the semiconductor device will be more minutely described with reference to
As shown in the drawings, each susceptor 18 is formed at boat 22 in such a manner that they are contacted with the supporting rollers 20 to be rotated. Also, the susceptor 18 is in the shape of a convex dish in front in order to closely face the loaded semiconductor substrates 100 inside the contact lines of the supporting rollers 20.
In the meantime, where the semiconductor substrates 100 are loaded on the susceptors 18, the semiconductor substrates 100 keep standing and are opposed to each other. Here, the susceptors 18 can be rotated through the supporting rollers 20 as described above.
At this time, the heater 80 is waiting for at the outside of the susceptors 18. After the completion of the loading, the heater 80 is inserted into a concave groove of the susceptors 18 and loaded closely to the back of the semiconductor substrates 100.
In order to allow the moving of the heater 80 through the loading device 92 and ensure the airtight of the reaction chamber 24, the heater 80 is separated from the reaction chamber 24 and is hermetically mounted to the reaction chamber 24 by means of the bellows cover 87.
Concretely, the bellows cover 87 includes a reaction chamber mounting ring 112 surrounding the circumference of the through hole of the reaction chamber 24 and the heater mounting ring 114 combined with the heater 80 and the loading device 92.
Also, the bellows tube 86 for sealing the space between the reaction chamber mounting ring 112 and the heat mounting ring 114 and allowing the moving thereof through the loading device 92 is formed.
Here, a transferring motor 93 for generating a driving force is formed at the a supporting frame 94 and a pair of pulleys 95 for transmitting the driving force of the transferring motor 93 is formed at the supporting frame 94. Here, any one pulley 98 is connected to the rotating shaft of the transferring motor 93.
Also, another pulley 98 is connected to the one end of a transferring bolt 96 and another end of the transferring bolt 96 is rotably mounted to the reaction chamber 24.
A transferring nut 97 for performing a pitch moving (a rectilineal moving) according to the rotation of the transferring bolt 96 is interlocked with and fixed to the transferring bolt 96 by a screw. Here, the transferring nut 97 is integrally connected to the heater mounting ring 114 and the heater mounting ring 114 is combined with the heater 80, so that the heat mounting ring 114 and the heater 80 are transferred together with the transferring nut 97, thereby the heater 80 can be loaded toward the back of the semiconductor substrate 100 located at the inside of the reaction chamber 24.
In the meantime, the guide rail 116 for attaching and deattaching the heater 80 is formed at the heater mounting ring 114. Here, the heater 80 is slid along the guide rail 116 and coupled to the heater mounting ring 114.
Also, the outer circumference of the heater cover 81 is inserted between the heat mounting ring 114 and the heater 80 in order to attach and deattach the heat cover to the heater body.
The heater cover 81 is a transparent cover such as a quartz cover and so on. The heater cover 81 is inserted between the heat mounting ring 114 and the heater 80 in order to maintain the airtight between the heater 80 and the reaction chamber 24.
Accordingly, where the coupling means 118 for connecting the heater 80 to the heater mounting ring 114 is removed to release the connection thereof, the body of the heater 80 can be easily removed along the guide rail 116.
After the heater 80 is loaded on the reaction chamber 24, the susceptors 18 is rotated in order to progress the process. Then, the reaction gas is injected and discharged between the opposed semiconductor substrate 100. At this time, it produces a high-temperature environment by means of the heater 80.
In order to form the film on the reaction surface of the semiconductor substrate 100, it is necessary to generate an appropriate temperature gradient on the semiconductor substrate 100. Therefore, the heater 80 has the heating surface for receiving the whole area of the semiconductor substrates 100 in order to heat the opposed semiconductor substrates 100 in the direction of the back of each semiconductor substrates. As described above, the heating region includes the central portion 102, the peripheral portion 104, the outer circumference portion 106, and the buffer portion 108 (note
The divided portions have separate power supply lines and different heating temperatures respectively. The remaining portions except for the central portion 102 divide into at least two separate portions vertically.
As shown in
In the meantime, as shown in
More concretely, the central portion 102 is concentric to the semiconductor substrates 100. That is, the central portion 102 corresponds to a circle area having a half diameter of each semiconductor substrate 100. The central portion 102 heats each semiconductor substrate 100 at the same temperature as the conventional heater.
The peripheral portion 104 surrounds the central portion 102 and heats the outside of the central portion 102. The peripheral portion 104 divides into at least two vertical partitions corresponding to the upper and lower portions of the semiconductor substrates 100.
More concretely, the peripheral portion 104 corresponds to an area from the boundary of the central portion 102 to the inside region adjacent to the peripheral of the semiconductor substrate 100. In the initial stage of the reaction gas injection, since the temperature of the peripheral area of the upper portion (a half circle) of the semiconductor substrate 100 can be lower than that of the lower part thereof, the peripheral area of the upper portion of the semiconductor substrate 100 can be highly heated.
The outer circumference portion 106 surrounds the peripheral portion 104 at the outside of the peripheral portion 104. The outer circumference portion 106 heats the area including the peripheral of the semiconductor substrate 100.
Concretely, the outer circumference portion 106 divides into at least two vertical partitions corresponding to the upper and lower portions of the semiconductor substrates 100. The outer circumference portion 106 includes the peripheral area of the semiconductor substrate 100 as well as the inside and outside areas of the peripheral line of the semiconductor substrate 100. Especially, the outer circumference portion 106 can compensate the drop of the temperature of the peripheral area of the semiconductor substrate 100.
Here, after the first supplied reaction gas is heated and the reaction gas supplied to the semiconductor substrate 100 is injected, the upper portion of the outer circumference portion 106 serves as a heating area (note
That is, when the reaction gas is injected into the semiconductor substrate 100, the outer circumference portion 106 prevent the process temperature of the semiconductor substrate 100 from being lower at the first reaction area owing to the temperature of the reaction gas.
Continuously, the buffer portion 108 surrounds the outer circumference portion 106 and heats it so as to alleviate the interference between the outer circumference portion 106 and the room temperature.
Concretely, the buffer portion 108 divides into at least two vertical partitions corresponding to the upper and lower portions of the semiconductor substrates 100. The buffer portion 108 serves to alleviate the unevenness of the temperature gradient generated from the interference between the outer circumference portion 106 and the room temperature.
That is, the outer circumference portion 106 is extended to the outside of the peripheral area of the semiconductor substrate 100. However, the temperature drop of the peripheral (edge) portion of the semiconductor substrate 100 cannot be sufficiently prevented by means of the outer circumference portion 106. Accordingly, The buffer portion 108 serves to alleviate the direct interference between the outer circumference portion 106 and the room temperature.
Especially, the upper portion of the buffer portion 108 connected to the gateway of the supply nozzle 76 of the reaction gas serves to preheat the reaction gas just prior to injecting it (note
Accordingly, the upper portion of the buffer portion 108 is the preheated area of the reaction prior to injecting it. The reaction gas preheated by the buffer portion 108 is injected, and then is secondary-heated at the outer circumference portion 106 to being putted in the semiconductor substrates 100.
The heating region according to the present invention allows the temperature gradient produced on the semiconductor substrate 100 to be more uniformly against the external disturbances (the temperature of the reaction gas and the interference with the room temperature).
In the meantime, the heating region of the heater 80 further includes the plurality of winding resistance heating lines 110 adjacent to each other in order to take charge of the corresponding divided portions, respectively (note
The indicated lines shown in
Here, the power line is electrically connected to the supplying line and the grounding line.
Accordingly, each divided portion of the heating region is separately provided with the resistance heating lines 110 and the winding resistance heating lines 110 fill the area of each corresponding divided portion, thereby form the separate heating surfaces.
Each element of the exhaust nozzle 78 including the lifting device 90 of the semiconductor device will be more minutely described with reference to
As described above, each susceptor 18 is formed at boat 22 in such a manner that they are contacted with the supporting rollers 20 to be rotated. Also, the susceptor 18 is in the shape of a convex dish in front in order to closely face the loaded semiconductor substrates 100 inside the contact lines of the supporting rollers 20.
The reaction gas is flowed from the upper portion toward the lower portion of the reaction chamber 24. H ere, the supply nozzle 76 is formed at the upper portion thereof and the exhaust nozzle 78 is formed at the lower portion thereof (note
Here, since the supply nozzle 76 has a thin thickness enough to escape the interference with the holder 10 during the loading and releasing of the boat 22, it may be fixed to the reaction chamber 24.
In the meantime, the exhaust nozzle 78 is separated from the supply nozzle 76 and is separately provided with the boat 22. Accordingly, The exhaust nozzle 78 is waiting for in order to escape the interference with the boat 22 prior to the loading and releasing of the boat 22.
The exhaust nozzle 78 requires a suction portion (space) in order to collect the reaction gas differently with the supply nozzle 76. That is, the exhaust nozzle 78 is maximally close between the opposed holders 10 in order to collect the reaction gas.
Here, since the moving range of the boat 22 is large, it is not desirable that the boat 22 is provided together with the exhaust nozzle 78 and its peripheral device.
At this time, in a case that the exhaust nozzle 78 is fixed to the reaction chamber 24, it can be rubbed with the holders 10 (between the holders 10) on the moving path of the boat 22. Also, the friction brings about a minute dust, thereby contaminating the process space.
Accordingly, the lifting device 90 is formed at the exhaust nozzle 78 in order to stand by at the lower portion of the opposed holder 10 prior to the loading/withdrawal of the reaction chamber 24 and load the of the exhaust nozzle 78 between the holders 10 during the loading thereof.
Concretely, the exhaust nozzle 78 is arranged in the form of a semicircle between the holders 10 in order to surround the lower portion of the opposed semiconductor substrate. During the standing by of the exhaust nozzle 78, the exhaust nozzle 78 is formed at the reaction chamber 24 in such a manner that both ends of the exhaust nozzle 78 are vertically separated from the holders 10.
Here, the separation of the exhaust nozzle 78 means the separation with the circumference boundary of each holder 10 at the space between the holders 10.
Also, the standby chamber 120 for standing by the exhaust nozzle 78 is formed at the lower portion of the reaction chamber 24.
The standby chamber 120 receives the proper portion of the exhaust nozzle 78. Also, during the process thereof, the purge gas is collects by the standby chamber 120 separately fixed to the reaction chamber 24.
In the meantime, the lifting device 90 is formed at the lower portion of the reaction chamber 24 and the bellows cover 89 and the exhaust nozzle 78 are connected to the lifting device 90.
Concretely, the bellows cover 89, which is a part of the reaction chamber 24 for arrangement of the exhaust pipe 79 includes the reaction chamber mounting ring 124 surrounding the circumference of the through hole of the reaction chamber 24 and the bracket mounting ring 130 mounted to the coupling bracket 126 of the lifting device 90 for lifting the exhaust nozzle 78 and having the packing 128 for sealing the outer circumference of the exhaust pipe 79.
The bellows cover 89 further includes the bellows tube 88 for sealing the space between the reaction chamber mounting ring 124 and the bracket mounting ring 130 and allowing the lifting of the exhaust pipe 79 through the lifting device 92.
Also, the lifting device 90 includes the supporting frame 132 formed at the outside of the reaction chamber 24 and the lifting panel 136 for sliding along the rail 134 formed at the supporting frame 132.
Moreover, the lifting device 90 includes the coupling bracket 126 mounted to the lifting panel 136 and coupled to the exhaust pipe 79 of the exhaust nozzle 78 and the bracket mounting ring 130.
In the meantime, the lifting motor 138 is formed at the supporting frame 132 and the lifting bolt 140 as the driving shaft is connected to the lifting motor 138. Here, the lifting bolt 140 receives the driving force from the lifting motor 138 by means of a pulley 144.
The lifting nut 142 for performing the pitch moving (rectilineal moving) according to the rotation of the lifting bolt 140 is interlocked with and fixed to the lifting bolt 140 by a screw. Here, the lifting nut 142 is integrally connected to the lifting panel 136.
Accordingly, the standby status of the exhaust nozzle 79 is maintained at the lower portion thereof prior to loading the semiconductor substrate 100 on the reaction chamber 21 or the withdrawal of the reaction chamber 24, so as to maintain the standby status thereof.
Here, the bellows cover 89 surrounds the outer circumference of the exhaust pipe 79 and maintains its tensile status.
Continuously, after loading the semiconductor substrate 100 on the reaction chamber 24, the lifting motor 138 is driven and the lifting bolt 140 is rotated by means of a pulley 144, so that the lifting nut 142 ascends and the lifting panel 136 ascends along the rail 134.
Thereafter, the coupling bracket 126 and the bracket mounting ring 130 integrally coupled to the lifting panel 136 and the exhaust nozzle 78 connected to them ascend together. Accordingly, the suction portion of the exhaust nozzle is inserted between the holders 10 and surrounds the lower portion of the outer circumference of the semiconductor substrate 100.
Here, the bellows cover 89 attached to the coupling bracket 126, is compressed to maintain the airtight between the exhaust pipe 79 and the reaction chamber 24.
Continuously, the driving device is connected to the susceptor 18 and the heater 80 is inserted into the inner space of the susceptor 18 through the loading device (not shown) to treat the process of the semiconductor substrats 100. After the process treatment is completed, it is progressed in reverse order of the above process (note
Therefore, the semiconductor manufacturing process using the semiconductor manufacturing device according to the present invention is performed.
That is, the semiconductor manufacturing method for processing the opposed semiconductor substrates 100 according to the present invention includes the steps of loading a pair of the opposed semiconductor substrates on the reaction chamber 24 for providing the airtight process space, connecting the driving shaft to a pair of driving roller 20′ among the support rollers 20 of the susceptors 18 in order to process the opposed semiconductor substrates 100, approaching the heating surface of the heater 80 to the back of the semiconductor substrates 100, inserting the exhaust nozzle 78 for surrounding the lower portion of the semiconductor substrate 100 into the space between the opposed holders 10, and processing the opposed semiconductor substrates 100.
Here, in the processing device loading step, the driving shaft connected to the driving roller 20′, the heater 80 moved toward the back of the semiconductor substrate, and the exhaust nozzle 78 inserted into the space between the opposed holders 10 maintain the moving and the airtight thereof by means of the bellows cover 69, 87, and 89 respectively.
In the meantime, the processing step further includes the back side evaporation disturbing step for disturbing the evaporation of the back of the semiconductor substrate 100 by supplying the purge gas to each back side of the opposed semiconductor substrates and the antifouling step for preventing the penetration of the minute dust in the direction of the inside of the opposed susceptors 18 by supplying the purge gas to the outer circumference of the each semiconductor substrate and forming the gas curtain portion 34 between each susceptor 18 and the supporting rollers 20 located at the circumference of each susceptor 18.
Also, the processing step further includes a heat treating step for heating the opposed semiconductor substrates 100 in the direction of the back of each semiconductor substrates through the heater 80 having the heating surface for receiving the whole area of the semiconductor substrates 100. Here, the heating region concentric to the semiconductor substrates includes a central portion 102 for heating the center of the semiconductor substrates 100, a peripheral portion 104 for heating the outside of the center of the semiconductor substrates 100 and surrounding the central portion 102, an outer circumference portion 106 for heating the outer circumference of the semiconductor substrates 100 and surrounding the peripheral portion 104, and a buffer portion 108 surrounding the outer circumference portion 106 and for heating it so as to alleviate the interference between the outer circumference portion 106 and the room temperature. Here, the peripheral portion 104, the outer circumference portion 106 and the buffer portion 108 divide into at least two vertical partitions corresponding to the upper and lower portions of the semiconductor substrates 100 respectively.
Here, the upper portion of the buffer portion 108 connected to the gateway of the supply nozzle 76 of the reaction gas allows the reaction gas to preheat and then, the preheated gas is injected. Also, the upper portion of the outer circumference portion 106 corresponding to the gateway of the supply nozzle 76 of the reaction gas and the space between the semiconductor substrates 100 allows the injected gas to heat and then, the heated gas is supplied to the semiconductor substrates 100.
As can be seen from the foregoing, in the semiconductor manufacturing device and the method thereof, there is an effect, in that the opposed semiconductor substrates keep standing and are rotated and the front and the outer circumference end of each substrate are supported by holders through the supporting panel, whereby preventing the transformation of the substrate through the elastic attaching means of the holder and sufficiently supporting the substrate under the environment of the high temperature.
Also, there is another effect in that the antifouling means is formed at the circumference of the susceptor 18, so that it can prevent the minute dust generated through the supporting roller from being penetrated into the process space of the semiconductor substrate, whereby decreasing the badness of the substrate.
Furthermore, there is further another effect in that the driving device is directly connected to the susceptor, whereby minutely controlling the revolution number of the susceptor.
Moreover, there is further another effect in that the driving device is sealed together with the reaction chamber by means of the bellows cover interposed between them and is provided with the cooling device, whereby maintaining the airtight of the reaction chamber and preventing the heat transformation of the driving shaft.
Also, there is further another effect in that the heating region of the heater divides into a plurality of radial portions, so that it can control the heating region in detail according to the external conditions, whereby forming the uniform temperature gradient of the semiconductor substrate.
In the meantime, there is further another effect in that the heater and the reaction chamber are combined with the bellows cover interposed between them and the heater is arranged closely to the rear of the semiconductor substrate during the loading, whereby allowing the moving of the heater and sufficiently maintaining the airtight of the reaction chamber.
Also, there is further another effect in that the heater is coupled to the heat mounting ring throuh the guide rail, whereby easily attaching and deattaching the heater.
Moreover, there is further another effect in that the exhaust nozzle is separated from the reaction chamber and loaded on the space between the substrates by means of the lifting device after the loading of the boat, so that the exhaust nozzle having a sufficient suction portion is loaded between the opposed substrates, whereby ensuring the reliance of the device.
While this invention has been described in connection with what are presently considered to be the most practical and preferred embodiments, it is to be understood that the invention is not limited to the disclosed embodiments and the drawings, but, on the contrary, it is intended to cover various modifications and variations within the spirit and scope of the appended claims.
