Number | Date | Country | Kind |
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63-118540 | May 1988 | JPX |
This application is a divisional application of copending application Ser. No. 07/353,331, filed May 16, 1989.
Number | Name | Date | Kind |
---|---|---|---|
3613055 | Varadi | Oct 1971 | |
3728696 | Pockinghorn | Apr 1973 | |
3893152 | Lin | Jul 1975 | |
4142176 | Dozier | Feb 1979 | |
4233526 | Kurogi et al. | Nov 1980 | |
4380804 | Lockwood et al. | Apr 1983 | |
4476478 | Noguchi et al. | Oct 1984 | |
4501007 | Jensen | Feb 1985 | |
4613956 | Paterson et al. | Sep 1986 | |
4652339 | Bluzer et al. | Mar 1987 | |
4803706 | Murayama et al. | Feb 1989 | |
4903098 | Smit et al. | Feb 1990 |
Number | Date | Country |
---|---|---|
0013297 | Jul 1980 | EPX |
57-206077 | Dec 1982 | JPX |
60-182162 | Sep 1985 | JPX |
61-3458 | Jan 1986 | JPX |
61-193484 | Aug 1986 | JPX |
62-160765 | Jul 1987 | JPX |
63-1053 | Jan 1988 | JPX |
63-45863 | Feb 1988 | JPX |
63-124467 | May 1988 | JPX |
8202275 | Jul 1982 | WOX |
Entry |
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"Nitride-Oxide Layer Proofs Memory Against Data Loss", 5 Jul. 1971, Electronics, pp. 53-56. |
IBM Technical Disclosure Bulletin, vol. 27, No. 6, Nov. 1984, New York, U.S. pp. 3302-3307; Adler, E.: `Densely Arrayed EEPROM Having Low-Voltage Tunnel Write` * p. 3302, Line 1-p. 3304, line 30; FIGS. 1, 2, 3, 4*. |
1986 Symposium on VLSI Technology Digest of Technical Papers, San Diego, R. Stewart et al., A High Density EPROM Cell and Array; pp. 89-90 *the whole document*. |
1988 Symposium on VLSI Technology Digest of Technical Papers, IEEE, San Diego, R. Shirota et al., A New NAND Cell for Ultra High Density 5V-Only EEPROMS, pp. 33-34 * p. 33, left column, line 50-p. 33, right column, line 9; FIG. 1*. |
Electronics & Power, vol. 19, No. 9, 17 May 1973, Hitchen GB, pp. 188-192; J. D. E. Beynon: `Charge Coupled Devices` * p. 188, right column, line 37-p. 189, left column, line 39; FIGS. 4A-4C*. |
Number | Date | Country | |
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Parent | 353331 | May 1989 |