Claims
- 1. A simiconductor device comprising:
- a body with one surface of P type conductivity material, said P type conductivity material having a wide energy bandgap and a large crystal lattice;
- a degenerate region of semiconductor material on the one surface, the material of said degenerate region having a relatively narrow energy bandgap with respect to said P type conductivity material, said degenerate region being doped with tin to enlarge the crystal lattice parameter of the degenerate region and being highly compensated with a P type conductivity modifier; and
- an electrical contact on the surface of the degenerate region.
- 2. The device as in claim 1 wherein the degenerate region has a crystal lattice closely approximating the crystal lattice of the p type conductivity material.
- 3. The device as in claim 1 wherein the degenerate region has a greater P type conductivity than said P type conductivity material.
- 4. The device as in claim 1 wherein the concentration of tin in the degenerate layer is about 1 atomic percent.
- 5. The device as in claim 1 wherein the P type conductivity material at the one surface of the body has an energy bandgap which is greater than 1.6 Ev.
- 6. The device as in claim 5 wherein the degenerate region of semiconductor material has an energy bandgap less than 1.6 Ev.
- 7. The device as in claim 1 wherein the degenerate region is composed of group III-V semiconductor material.
- 8. The device as in claim 7 wherein the degenerate region is composed of gallium arsenide.
- 9. The device as in claim 8 wherein the P type conductivity modifier is zinc.
- 10. The device as in claim 9 wherein the P type conductivity material is an alloy of aluminum gallium arsenide.
- 11. The device as in claim 1 wherein said device consists of a semiconductor injection laser, said laser composed of a plurality of layers of gallium arsenide and alloys of aluminum gallium arsenide; and
- said degenerate region is composed of gallium arsenide doped with a small amount of tin and compensatedly doped P type with zinc.
BACKGROUND OF THE INVENTION
The invention described herein was made in the performance of work under a NASA contract and is subject to the provisions of Section 305 of the National Aeronautics and Space Act of 1958, Public Law 85-568 (72 Stat. 435; 42 U.S.C. 2457).
US Referenced Citations (2)
Number |
Name |
Date |
Kind |
3632436 |
Denning |
Jan 1972 |
|
3684930 |
Collins et al. |
Aug 1972 |
|
Non-Patent Literature Citations (1)
Entry |
Jour. of App. Physics -- vol. 39, No. 9, Aug. 1968 -- YEH et al. "Diffusion of tin into silicon" |