Claims
- 1. A semiconductor substrate comprising:
a trench formed in a semiconductor substrate, wherein the trench is open at an upper surface of the semiconductor substrate wherein a radius of curvature at a corner defined by a side face and a bottom face of the trench is 1.0 μm or more, and the maximum roughness height of an inner face of the trench is 3 nm or less; and a single crystal semiconductor layer filling the trench.
- 2. A semiconductor substrate according to claim 1, wherein the radius of curvature is 1.5 μm or more, and the maximum roughness height is 2 nm or less.
- 3. A semiconductor substrate according to claim 1, wherein the single crystal semiconductor layer is composed of a plurality of layers, each layer having a different dopant concentration or a different conduction type.
Priority Claims (2)
Number |
Date |
Country |
Kind |
2000-167822 |
Jun 2000 |
JP |
|
2000-313918 |
Oct 2000 |
JP |
|
CROSS REFERENCE TO RELATED APPLICATIONS
[0001] This application is a continuation of US patent application Ser. No. 09/870,705, which was filed on Jun. 1, 2001.
Divisions (1)
|
Number |
Date |
Country |
Parent |
09870705 |
Jun 2001 |
US |
Child |
10132298 |
Apr 2002 |
US |