Claims
- 1. A semiconductor device comprising:
- an insulating substrate;
- an island-shaped single-crystalline semiconductor layer provided on the insulating substrate;
- an insulating layer provided on an exposed surface of the single-crystalline semiconductor layer; and
- a conductor pattern provided on the single-crystalline semiconductor layer, with the insulating layer therebetween, and said conductor pattern extending to said insulating substrate, said insulating layer which is provided at an edge and a side region of the single-crystalline semiconductor layer below the conductor pattern, being selectively formed with a larger thickness than at a top and remaining side portions of the single-crystalline semiconductor layer.
- 2. A semiconductor device according to claim 1, wherein said insulating substrate is an SiO.sub.2 layer.
- 3. A semiconductor device according to claim 1, wherein said single-crystalline semiconductor layer is a single-crystalline silicon layer.
- 4. A semiconductor device according to claim 1, wherein said conductor pattern is a gate electrode.
- 5. A semiconductor device according to claim 1, wherein said insulating layer is a thermally grown oxide layer.
Priority Claims (1)
Number |
Date |
Country |
Kind |
61-025022 |
Feb 1986 |
JPX |
|
Parent Case Info
This application is a continuation of application Ser. No. 011,814, filed Feb. 6, 1987, now abandoned.
US Referenced Citations (3)
Foreign Referenced Citations (1)
Number |
Date |
Country |
58-184759 |
Oct 1983 |
JPX |
Continuations (1)
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Number |
Date |
Country |
Parent |
11814 |
Feb 1987 |
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