Patent Application
20210242017
The present invention relates to a semiconductor wafer.
Conventionally, there is known a technique for enhancing the quality of a nitride semiconductor layer formed over a Si (silicon) substrate by epitaxial crystal growth (see, e.g., Patent Document 1).
The technique as disclosed in Patent Document 1 is designed to form an AlN (aluminium nitride) based thin film, which serves as a buffer layer to be formed over a surface of a substrate including a Si substrate, in a plurality of stages each with a different condition for film formation, and thereby lessen the occurrence of a crack formation or a pit formation in a group III nitride thin film layer to be formed over the MN based thin film.
However, not every one of the nitride semiconductor layers formed over the Si substrate is enhanced in the quality, even by using the technique as disclosed in Patent Document 1. For that reason, requiring the nitride semiconductor layers formed over the Si substrate to be high in the quality leads to an increase in the number of defective units not meeting the quality criteria, and a lowering in the production yield.
An object of the present invention is to provide a semiconductor wafer, which is designed to include therein a nitride semiconductor layer over a Si substrate, and which has a structure designed to have a sufficient breakdown voltage for a specific use and be able to be produced at a high production yield.
For the purpose of achieving the above object, one aspect of the present invention provides a semiconductor wafer as defined in [1] to [3] below.
[1] A semiconductor wafer, comprising: a substrate mainly composed of Si; a buffer layer formed over the substrate and comprises an AlN layer as a lowermost layer; and a nitride semiconductor layer formed over the buffer layer and includes Ga, wherein the semiconductor wafer is configured in such a manner that a pit density of an upper surface of the AlN layer is more than 0 but less than 2.4×1010 cm−2.
[2] The semiconductor wafer as defined in the above [1], wherein the pit density of the upper surface of the AlN layer is not more than 5.5×109 cm−2.
[3] The semiconductor wafer as defined in the above [2], wherein the pit density of the upper surface of the AlN layer is not more than 1.4×109 cm−2.
According to the present invention, it is possible to provide the semiconductor wafer, which is designed to include therein the nitride semiconductor layers over the Si substrate, and which has a structure designed to have a sufficient breakdown voltage for a specific use and be able to be produced at a high production yield.
(Configuration of a Semiconductor Wafer 1)
The substrate 10 is a substrate mainly composed of Si, and is typically a Si substrate. For the Si substrate 10, the Si substrate of a large diameter can be prepared at a low cost.
The AlN layer 11a is a film including no Ga therein and coat a surface of the substrate 10, and prevents the occurrence of a reaction between the Si included in the substrate 10 and the Ga included in the layers to be formed above the substrate 10.
The AlN layer 11a may have a two-layer structure composed of a low temperature grown layer, which is formed at a low growth temperature (e.g., 1000 to 1150 degrees C.), and a high temperature grown layer, which is formed over the low temperature grown layer at a high growth temperature (e.g., 1100 to 1300 degrees C.). The higher the growing temperature for the AlN layer 11a, the higher the crystal quality of the AlN layer 11a becomes, and the larger the strain of the AlN layer 11a due to the lattice mismatch between the AlN layer 11a and the substrate 10 becomes. Further, as the strain of the AlN layer 11a becomes larger, the upper surface of the AlN layer 11a is more liable to a pit formation.
For this reason, by configuring the lower layer of the AlN layer 11a being contiguous to the substrate 10 as the low temperature grown layer whose crystal quality is low, it is possible to suppress the occurrence of a strain, and thereby suppress the occurrence of a pit formation on the upper surface of the AlN layer 11a. On the other hand, by configuring the upper layer of the AlN layer 11a as the high temperature grown layer whose crystal quality is high, it is possible to make high the crystal quality of the nitride semiconductor layer 12 to be epitaxially grown over the AlN layer 11a.
The pits present on the upper surface of the AlN layer 11a lead to the occurrence of a defect formation in the epitaxial crystal layers (the upper layer 11b of the buffer layer 11 and the nitride semiconductor layer 12) to be formed over the MN layer 11a.
Since GaN based crystals for constituting the upper layer 11b of the buffer layer 11 and the nitride semiconductor layer 12 are grown in a lateral direction as well, a certain amount of defect formation can be repaired during the growth thereof (no defect can be inherited by the overlying layers). However, if the pit density of the upper surface of the AlN layer 11a is high to some extent, the repair of defects resulting from the growth of the upper layer 11b of the buffer layer 11 and the nitride semiconductor layer 12 cannot keep up with the formation of those defects and, as a result, those defects remain therein adjacent to the upper surface of that nitride semiconductor layer 12. The amount of the defects contained in that nitride semiconductor layer 12 affects the breakdown voltage in a vertical direction of the semiconductor wafer 1. Note that the breakdown voltage in the present embodiment refers to the voltage with the current density becoming 1×10−6 A/mm2.
Further, even if the density of the defects in the nitride semiconductor layer 12 is constant in the semiconductor wafer 1, as the chip area in a semiconductor device cut out from the semiconductor wafer 1 becomes large, the amount of the defects contained in the semiconductor device becomes large and, as a result, its adverse effect on the reliability of that semiconductor device becomes large. For this reason, when the semiconductor device designed to be high in its electric current rating and large in its chip area is cut out from the semiconductor wafer 1, it is required to suppress the pit density of the upper surface of the MN layer 11a to be lower.
The pit density of the upper surface of the AlN layer 11a is more than 0 but less than 2.4×1010 cm−2. In this case, the densities of the defects in the upper layer 11b of the buffer layer 11 and the nitride semiconductor layer 12 are kept low to such an extent that the breakdown voltage in the vertical direction of the semiconductor wafer 1 becomes more than approximately 650 V, thereby making it possible to cut out the semiconductor device designed to be 10 A in its electric current rating and for example, approximately 2 mm2 in its chip area, from the semiconductor wafer 1. In other words, even when the semiconductor wafer 1 contains the pits present on the upper surface of the AlN layer 11a, as long as the pit density is less than 2.4×1010 cm−2, no problem arises in applying that semiconductor wafer 1 to the semiconductor device designed to be 650 V and 10 A in its power rating.
Further, the pit density of the upper surface of the AlN layer 11a is preferably not more than 5.5×109 cm−2. In this case, the densities of the defects in the upper layer 11b of the buffer layer 11 and the nitride semiconductor layer 12 are kept low to such an extent that the breakdown voltage in the vertical direction of the semiconductor wafer 1 becomes more than approximately 650 V, thereby making it possible to cut out the semiconductor device designed to be 30 A in its electric current rating and for example, approximately 7 mm2 in its chip area, from the semiconductor wafer 1. In other words, even when the semiconductor wafer 1 contains the pits present on the upper surface of the AlN layer 11a, as long as the pit density is not more than 5.5×109 cm−2, no problem arises in applying that semiconductor wafer 1 to the semiconductor device designed to be 650 V and 30 A in its power rating.
Further, the pit density of the upper surface of the AlN layer 11a is preferably not more than 1.4×109 cm−2. In this case, the densities of the defects in the upper layer 11b of the buffer layer 11 and the nitride semiconductor layer 12 are kept low to such an extent that the breakdown voltage in the vertical direction of the semiconductor wafer 1 becomes more than approximately 650 V, thereby making it possible to cut out the semiconductor device designed to be 70 A in its electric current rating and for example, approximately 16 mm2 in its chip area, from the semiconductor wafer 1. In other words, even when the semiconductor wafer 1 contains the pits present on the upper surface of the AlN layer 11a, as long as the pit density is not more than 1.4×109 cm−2, no problem arises in applying that semiconductor wafer 1 to the semiconductor device designed to be 650 V and 70 A in its power rating.
Note that the properties of the semiconductor device described above are taken as the examples, and that the properties of the semiconductor device produced using the semiconductor wafer 1 are not limited to the foregoing. For example, by adding to the semiconductor wafer 1 a stack structure for enhancing the breakdown voltage in the vertical direction of the semiconductor wafer 1, it is possible to apply the semiconductor wafer 1 to the semiconductor device designed to operate at a higher voltage.
In this manner, by using the pit density of the upper surface of the AlN layer 11a for the quality criteria for the semiconductor wafer 1 to make a decision on the quality (the breakdown voltage in the vertical direction) of the semiconductor wafer 1, and setting the quality decision criteria in accordance with the intended use of the semiconductor wafer 1, it is possible to enhance the production yield for the semiconductor wafer 1 while ensuring the quality of the semiconductor wafer 1.
The upper layer 11b of the buffer layer 11 is made of a nitride semiconductor (a unary, binary or ternary compound semiconductor including a group III element and N (nitrogen) therein). For example, when the nitride semiconductor layer 12 is made of GaN, the upper layer 11b is made of AlxGa1-xN (0≤x≤1). The upper layer 11b may have a multilayer structure such as a superlattice structure, or a graded composition structure, or the like.
The superlattice buffer structure is, for example, the structure in which AlxGa1-xN films being large in its Al composition x (large in its lattice constant) and AlyGa1-yN films being 0 or small in its Al composition y (small in its lattice constant) are alternately stacked therein. When the coefficient of thermal expansion of the substrate 10 is smaller than the coefficients of thermal expansion of the nitride semiconductors for constituting the buffer layer 11 and the nitride semiconductor layer 12, during cooling those nitride semiconductors grown over the substrate 10 at the high growth temperatures, those nitride semiconductors are more greatly contracted than the substrate 10 and, as a result, those nitride semiconductors are subjected to a tensile stress. In this case, in order to allow a compressive stress caused in the buffer layer 11 to cancel out the tensile stress caused in those nitride semiconductors, it is preferable that the Al composition x of the AlxGa1-xN films and the Al composition y of the AlyGa1-yN films meet a condition 0≤y<x≤1, and that the AlxGa1-xN films are thinner than the AlyGa1-yN films. The graded composition buffer structure is, for example, the structure in which a plurality of AlxGa1-xN films being different in the Al composition x are stacked therein with their respective Al compositions x becoming smaller from each underlying layer toward each overlying layer.
When employing the superlattice buffer structure therefor, it is possible to suppress the occurrence of such a warping as to protrude the semiconductor wafer 1 to the lower side (the substrate 10 side) of the semiconductor wafer 1, which is caused by the difference between the coefficient of thermal expansion of the substrate 10 mainly composed of Si and the coefficient of thermal expansion of the nitride semiconductor layer 12.
In the semiconductor wafer 1 warped to be protruded to the lower side thereof, the tensile stress is occurring in the nitride semiconductor layer 12 and, as a result, the nitride semiconductor layer 12 remains highly liable to a crack formation. Since the tensile stress in the nitride semiconductor layer 12 can be canceled out by the use of the superlattice buffer structure, it is possible to suppress the occurrence of the warping in the semiconductor wafer 1.
When the coefficient of thermal expansion of the substrate 10 is smaller than the coefficients of thermal expansion of the nitride semiconductors for constituting the buffer layer 11 and the nitride semiconductor layer 12, during cooling those nitride semiconductors grown over the substrate 10 at the high growth temperatures, those nitride semiconductors are more greatly contracted than the substrate 10 and, as a result, those nitride semiconductors are subjected to a tensile stress. In this case, in order to allow a compressive stress caused by the lattice mismatch between the buffer layer 11 and the nitride semiconductor layer 12 to cancel out the tensile stress caused in those nitride semiconductors, it is preferable that the a axis length (the length of the a axis of the unit cell) at the weighted mean of the composition ratios weighted by the amount of substance (mol) in the buffer layer 11 in a strain-free condition is smaller than the a axis length at the weighted mean of the composition ratios weighted by the amount of substance (mol) in the nitride semiconductor layer 12 in a strain-free condition.
The nitride semiconductor layer 12 is made of a nitride semiconductor, and may have a multilayer structure. In the example shown in
Even if the nitride semiconductors are not intentionally doped with impurities, a nitrogen deficiency occurs, or the oxygen and the silicon, which are residual impurities within the reactor, act as n-type dopants, and, as a result, the nitride semiconductors are low in electrical insulating performance. For this reason, in order to ensure a sufficient breakdown voltage of the semiconductor wafer 1, the upper layer 11b of the buffer layer 11 and the nitride semiconductor layer 12 include therein impurities for carrier compensation, such as impurities of C, Fe, Mn, Cr, Mg, Co, Ni, or the like. It is preferable that the concentrations of the impurities for carrier compensation to be included in the upper layer 11b of the buffer layer 11 and the nitride semiconductor layer 12 are not less than 1×1018 cm−3 for the purpose of sufficiently compensating the carriers (electrons) produced by the nitrogen deficiency or the residual impurities within the reactor and thereby suppress the occurrence of a lowering in the breakdown voltage of the semiconductor wafer 1, and are not more than 1×1020 cm−3 because if the doping amounts thereof are too large, there is concern that the crystal qualities of the upper layer 11b of the buffer layer 11 and the nitride semiconductor layer 12 may be lowered.
Note that the semiconductor device to which the semiconductor wafer 1 is applied is not limited to the one that utilizes a two-dimensional electron gas, but may be, for example, a light emitting device such as an LED (Light Emitting Diode) or the like.
(Producing Method for the Semiconductor Wafer 1)
One example of a producing method for the semiconductor wafer 1 is shown below.
First, the substrate 10 is set within a glove box of a producing apparatus such as a MOCVD (metal organic chemical vapor deposition) apparatus or the like. The dew point within the glove box at this point of time is preferably less than −30 degrees C., more preferably not more than −40 degrees C., and still more preferably not more than −70 degrees C. The dew point is the temperature at which dew condensation occurs, and the smaller the amount of moisture contained in the atmosphere, the lower the dew point.
By setting the dew point at less than −30 degrees C., the pit density of the upper surface of the AlN layer 11a is highly likely to become less than 2.4×1010 cm−2. Further, by setting the dew point at not more than −40 degrees C., the pit density of the upper surface of the AlN layer 11a is highly likely to become not more than 5.5×109 cm−2, and by setting the dew point at not more than −70 degrees C., the pit density of the upper surface of the AlN layer 11a is highly likely to become not more than 1.4×109 cm−2. The reason for the lower dew point making the pit density lower is because the pit formation mechanism is related to the oxygen impurities.
Note that the moisture within the glove box is typically removed by nitrogen purging or the like before setting the substrate 10, but that, at this point of time, the oxygen is also removed at the same time as the moisture. For this reason, it is possible to indirectly know the amount of the oxygen by checking the dew point within the glove box when setting the substrate 10. That is, the dew point can also be used as an index of the amount of the oxygen.
Next, for the purpose of removing a surface oxide film on the surface of the substrate 10 mainly composed of Si, the surface of the substrate 10 is subjected to H2 annealing treatment. This H2 annealing treatment is carried out under a temperature condition of not less than 900 degrees C., in order to reduce the surface oxide film on the surface of the substrate 10. For example, the temperature of not less than 1000 degrees C. and not more than 1060 degrees C. is held for not shorter than 10 seconds.
When the AlN layer 11a is formed over the substrate 10 with the surface oxide film remaining on the surface of the substrate 10, a local growth failure occurs and, as a result, a large strain occurs at the boundary between the place with the local growth failure occurring thereon and the place with the AlN layer 11a properly grown thereon, thus rendering the upper surface of the AlN layer 11a liable to a pit formation. For this reason, in order to suppress the occurrence of the pit formation on the upper surface of the AlN layer 11a, it is preferable to remove the surface oxide film on the surface of the substrate 10.
Further, for the purpose of homogenizing the crystal qualities in substrate plane of the AlN layer 11a and each layer to be formed over the AlN layer 11a, a silicon nitride film may be formed over the surface of the substrate 10 by an ammonia treatment. Since the formation of that silicon nitride film over the surface of the substrate 10 allows an enhancement in the lattice matching properties between the AlN layer 11a and the foundation underlying the AlN layer 11a, it is possible to grow the AlN layer 11a thereon at the high growth temperatures with no crack formation occurring in the AlN layer 11a. The high growth temperature growth of the AlN layer 11a allows an enhancement in the crystal quality of the AlN layer 11a, and thereby allows an enhancement in the crystal quality of each layer grown over the AlN layer 11a.
The silicon nitride film is formed thereover to have a thickness of not thinner than 0.5 nm and not thicker than 3 nm, typically a thickness of on the order of 1 nm. Here, if the silicon nitride film is formed with the surface oxide film remaining on the surface of the substrate 10, a variation occurs in the thickness of the silicon nitride film and, as a result, a strain occurs in the AlN layer 11a, thus rendering the upper surface of the MN layer 11a liable to a pit formation.
Note that even when no silicon nitride film is formed over the surface of the substrate 10 before the formation of the AlN layer 11a, after the formation of the AlN layer 11a, it is possible to partially form the silicon nitride film on the surface of the substrate 10 by diffusing nitrogen through the AlN layer 11a formed over the substrate 10. However, naturally, this partial silicon nitride film has no enhancing effect on the crystal quality of the AlN layer 11a and the like.
In order to form the AlN layer 11a over the surface of the substrate 10 with no crack formation occurring in the MN layer 11a without forming the silicon nitride film over the surface of the substrate 10, for example, an AlN whose crystallinity is relatively poor may be first grown on the surface of the substrate 10 at a low growth temperature of on the order of 900 degrees C., and subsequently the AlN layer 11a may be grown on that AlN with its relatively poor crystallinity at the high growth temperatures.
Next, as shown in
Alternatively, as described above, first, an AlN may be grown on the substrate 10 at a low growth temperature (e.g. 1000 to 1150 degrees C.), and thereafter that AlN may be grown by elevating that growth temperature to a high growth temperature (e.g. 1100 to 1300 degrees C.), so as to form the AlN layer 11a including therein a low temperature grown layer, and a high temperature grown layer, which is formed over that low temperature grown layer.
Next, as shown in
The buffer layer 11 is preferably formed thereover in such a manner that the (0001) crystal plane of the nitride semiconductor crystal for constituting that buffer layer 11 is substantially parallel to the substrate plane of the substrate 10. By allowing the crystal plane of the nitride semiconductor crystal for constituting that buffer layer 11 to be aligned with the substrate plane of the substrate 10, the inherent properties of the crystal can be exhibited. In forming the buffer layer 11, the (0001) crystal plane of the nitride semiconductor crystal for constituting that buffer layer 11 can be made substantially parallel to the substrate plane of the substrate 10 by performing the crystal growth in such ranges of the ratio of the raw materials to be fed and the crystal growing temperature (for example, the value of the ratio of the amount of the group V raw material gas to be fed to the amount of the group III raw material gas to be fed is larger than 1 and the crystal growing temperature is less than 1400 degrees C.) as to make the feeding partial pressures for the raw material gases of Ga and Al, that are elements in the group III in the periodic table, more than their partial pressures at the uppermost surface of the growing crystal on the substrate 10.
Next, as shown in
After that, the pit density of the upper surface of the AlN layer 11a of the resulting semiconductor wafer 1 is measured by a cross section observation with a TEM (Transmission Electron Microscope) or the like, so that, by using that the pit density for the quality decision criteria for the resulting semiconductor wafer 1 in accordance with the intended use of the resulting semiconductor wafer 1, it is possible to make an acceptance or rejection decision (as to whether or not the resulting semiconductor wafer 1 can be used), based on that quality decision criteria for the pit density in accordance with the intended use of the resulting semiconductor wafer 1.
For example, when applying the resulting semiconductor wafer 1 to the semiconductor device designed to be 650 V and 10 A in its power rating, it is possible to make an acceptance decision when the pit density of the upper surface of the AlN layer 11a is less than 2.4×1010 cm−2. Further, when applying the resulting semiconductor wafer 1 to the semiconductor device designed to be 650 V and 30 A in its power rating, it is possible to make an acceptance decision when the pit density of the upper surface of the AlN layer 11a is not more than 5.5×109 cm−2. Further, when applying the resulting semiconductor wafer 1 to the semiconductor device designed to be 650 V and 70 A in its power rating, it is possible to make an acceptance decision when the pit density of the upper surface of the AlN layer 11a is not more than 1.4×109 cm−2.
Note that the measurement and the acceptance or rejection decision to be made on the pit density of the upper surface of the AlN layer 11a can be carried out at any timing after the formation of the same AlN layer 11a. For example, they may be carried out immediately after the formation of the same AlN layer 11a.
According to the above-described embodiment, it is possible to provide the semiconductor wafer 1 which includes therein the nitride semiconductor layers over the Si substrate 10 and which has a structure designed to have a sufficient breakdown voltage for a specific use and be able to be produced at a high production yield, and it is possible to provide the production method for the same semiconductor wafer 1.
With respect to the semiconductor wafer 1 according to the above-described embodiment, the relationships among the dew point of the atmosphere during the formation of the AlN layer 11a, the pit density of the upper surface of the same AlN layer 11a, and the breakdown voltage of the produced semiconductor wafer 1 were investigated. The details thereof will be described below.
In the present example, specimens A to G, which were the semiconductor wafers having the configurations shown in Table 1 below, were produced and evaluated. Note that it was confirmed that the breakdown voltages of the semiconductor wafers were not affected by the thickness, the diameter, the principal plane off angle, and the electrical conductivity type of the substrate 10.
The specimens A to G were each different in the dew point of the atmosphere during the formation of the AlN layer 11a and, as a result, the specimens A to G were each different in the pit density of the upper surface of the AlN layer 11a. Further, since the specimens A to G were each different in the pit density of the upper surface of the AlN layer 11a, the specimens A to G were each different in the amount of the defects in the buffer layer 11 and the nitride semiconductor layer 12, and different in the breakdown voltage in the vertical direction.
Table 2 below shows, for each of the specimens A to G, the dew point of the atmosphere during the formation of the AlN layer 11a, the pit density of the upper surface of the AlN layer 11a, and the breakdown voltage in the vertical direction. The breakdown voltages in the vertical direction of the specimens A to G were measured by applying a voltage between a metal electrode formed on the upper layer 12b of the nitride semiconductor layer 12 and the substrate 10.
2.4 × 1010
The “Decision α” in Table 2 is an acceptance or rejection decision result when the specimens A to G were applied to the semiconductor device designed to be 650 V and 10 A in its power rating and 2 mm2 in its chip area, and if each specimen was less than 2.4×1010 cm−2 in the pit density of the upper surface of the AlN layer 11a, then an acceptance decision denoted by “∘” in Table 2 was made, or if each specimen was not less than 2.4×1010 cm−2 in the pit density of the upper surface of the AlN layer 11a, then a rejection decision denoted by “x” in Table 2 was made.
The “Decision β” in Table 2 is an acceptance or rejection decision result when the specimens A to G were applied to the semiconductor device designed to be 650 V and 30 A in its power rating and 7 mm2 in its chip area, and if each specimen was not more than 5.5×109 cm2 in the pit density of the upper surface of the AlN layer 11a, then an acceptance decision denoted by “o” in Table 2 was made, or if each specimen was more than 5.5×109 cm−2 in the pit density of the upper surface of the MN layer 11a, then a rejection decision denoted by “x” in Table 2 was made.
The “Decision γ” in Table 2 is an acceptance or rejection decision result when the specimens A to G were applied to the semiconductor device designed to be 650 V and 70 A in its power rating and 16 mm2 in its chip area, and if each specimen was not more than 1.4×109 cm−2 in the pit density of the upper surface of the MN layer 11a, then an acceptance decision denoted by “∘” in Table 2 was made, or if each specimen was more than 1.4×109 cm−2 in the pit density of the upper surface of the AlN layer 11a, then a rejection decision denoted by “x” in Table 2 was made.
The densities of the pits on the upper surfaces of the respective AlN layers 11a of the specimens A to G shown in Table 2 were obtained from the numbers of pits measured within the predetermined ranges of the fields of view in the cross-sectional TEM images shown in
Although the embodiments of the present invention and the examples thereof have been described above, the present invention is not limited to the above described embodiments and the above described examples, but the present invention can be variously modified and implemented without departing from the spirit thereof.
Further, the above described embodiments and the above described examples are not to be construed as limiting the inventions according to the appended claims. Further, it should be noted that not all the combinations of the features described in the embodiments and the examples are indispensable to the means for solving the problem of the invention.
The present invention provides the semiconductor wafer, which includes therein the nitride semiconductor layers over the Si substrate, and which has a structure designed to have a sufficient breakdown voltage for a specific use and be able to be produced at a high production yield.
Although the invention has been described with respect to the specific embodiments for complete and clear disclosure, the appended claims are not to be thus limited but are to be construed as embodying all modifications and alternative constructions that may occur to one skilled in the art which fairly fall within the basic teaching herein set forth.
| Number | Date | Country | Kind |
|---|---|---|---|
| 2018-020954 | Feb 2018 | JP | national |
| Filing Document | Filing Date | Country | Kind |
|---|---|---|---|
| PCT/JP2019/004252 | 2/6/2019 | WO | 00 |
