characterised by the substrate

Industry

CPC
C30B25/18

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CCHEMISTRY METALLURGY C30Crystal growth C30BSINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL REFINING BY ZONE-MELTING OF MATERIAL PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH D... C30B25/00Single-crystal growth by chemical reaction of reactive gases

Current Industry

C30B25/18characterised by the substrate

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Single crystal composite synthetic diamond material
- Patent number 12,234,570
- Issue date Feb 25, 2025
- ELEMENT SIX (UK) LIMITED
- Andrew Mark Edmonds
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Structure for producing diamond and method for manufacturing same
- Patent number 12,227,828
- Issue date Feb 18, 2025
- National University Corporation Nagaoka University of Technology
- Hideo Aida
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Engineered substrate structures for power and RF applications
- Patent number 12,217,957
- Issue date Feb 4, 2025
- QROMIS, Inc.
- Vladimir Odnoblyudov
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method of producing large GaAs and GaP infrared windows
- Patent number 12,203,191
- Issue date Jan 21, 2025
- BAE Systems Information and Electronic Systems Integration Inc.
- Peter G. Schunemann
- C30 - CRYSTAL GROWTH
Information Patent Grant
Gas-phase reactor system-with a reaction chamber, a solid precursor...
- Patent number 12,195,876
- Issue date Jan 14, 2025
- ASM IP Holding B.V.
- John Tolle
- C30 - CRYSTAL GROWTH
Information Patent Grant
Epitaxial alkali halide layers for III-V substrate recycling
- Patent number 12,198,924
- Issue date Jan 14, 2025
- Alliance for Sustainable Energy, LLC
- Brelon James May
- B08 - CLEANING
Information Patent Grant
Methods of forming silicon carbide coated base substrates at multip...
- Patent number 12,180,611
- Issue date Dec 31, 2024
- Applied Materials, Inc.
- Yen Lin Leow
- C30 - CRYSTAL GROWTH
Information Patent Grant
Preparation method for semiconductor structure
- Patent number 12,183,576
- Issue date Dec 31, 2024
- ENKRIS SEMICONDUCTOR, INC.
- Peng Xiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Incorporating semiconductors on a polycrystalline diamond substrate
- Patent number 12,176,221
- Issue date Dec 24, 2024
- Texas State University
- Raju Ahmed
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Growth of A-B crystals without crystal lattice curvature
- Patent number 12,168,839
- Issue date Dec 17, 2024
- Freiberger Compound Materials GMBH
- Berndt Weinert
- C30 - CRYSTAL GROWTH
Information Patent Grant
Ground substrate and method for producing same
- Patent number 12,163,249
- Issue date Dec 10, 2024
- NGK Insulators, Ltd.
- Morimichi Watanabe
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for manufacturing a composite structure comprising a thin la...
- Patent number 12,159,781
- Issue date Dec 3, 2024
- Soitec
- Hugo Biard
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Optimized heteroepitaxial growth of semiconductors
- Patent number 12,157,956
- Issue date Dec 3, 2024
- United States of America as represented by the Secretary of the Air Force
- Vladimir Tassev
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of obtaining a smooth surface with epitaxial lateral overgrowth
- Patent number 12,146,237
- Issue date Nov 19, 2024
- The Regents of the University of California
- Takeshi Kamikawa
- C30 - CRYSTAL GROWTH
Information Patent Grant
Optoelectronic device formed on a flexible substrate
- Patent number 12,142,702
- Issue date Nov 12, 2024
- King Abdullah University of Science and Technology
- Xiao Tang
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for producing a nitride layer
- Patent number 12,134,836
- Issue date Nov 5, 2024
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- Matthew Charles
- C30 - CRYSTAL GROWTH
Information Patent Grant
Nitride semiconductor template, method for manufacturing nitride se...
- Patent number 12,129,572
- Issue date Oct 29, 2024
- Sumitomo Chemical Company, Limited
- Hajime Fujikura
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Semiconductor wafer and method of manufacturing semiconductor appar...
- Patent number 12,131,966
- Issue date Oct 29, 2024
- Kabushiki Kaisha Toshiba
- Fuyuma Ito
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of forming monocrystalline nickel-titanium films on single c...
- Patent number 12,116,271
- Issue date Oct 15, 2024
- Arizona Board of Regents on behalf of Arizona State University
- Jagannathan Rajagopalan
- B81 - MICRO-STRUCTURAL TECHNOLOGY
Information Patent Grant
Optimized heteroepitaxial growth of semiconductors
- Patent number 12,116,695
- Issue date Oct 15, 2024
- United States of America as represented by Secretary of the Air Force
- Vladimir Tassev
- C30 - CRYSTAL GROWTH
Information Patent Grant
Surface emitting laser element and manufacturing method of the same
- Patent number 12,113,333
- Issue date Oct 8, 2024
- Kyoto University
- Susumu Noda
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of providing a wrinkle pattern or producing a substrate havi...
- Patent number 12,104,280
- Issue date Oct 1, 2024
- City University of Hong Kong
- Thuc Hue Ly
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Self-standing GaN substrate, GaN crystal, method for producing GaN...
- Patent number 12,107,129
- Issue date Oct 1, 2024
- Mitsubishi Chemical Corporation
- Satoru Nagao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing a SiC substrate via an etching step, growth st...
- Patent number 12,098,476
- Issue date Sep 24, 2024
- Kwansei Gakuin Educational Foundation
- Tadaaki Kaneko
- C30 - CRYSTAL GROWTH
Information Patent Grant
Large area group III nitride crystals and substrates, methods of ma...
- Patent number 12,091,771
- Issue date Sep 17, 2024
- SLT TECHNOLOGIES, INC.
- Drew W. Cardwell
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for manufacturing nitride semiconductor substrate, nitride s...
- Patent number 12,071,707
- Issue date Aug 27, 2024
- Sumitomo Chemical Company, Limited
- Takehiro Yoshida
- C30 - CRYSTAL GROWTH
Information Patent Grant
Process for producing a monoocrystalline layer of AlN material by t...
- Patent number 12,071,706
- Issue date Aug 27, 2024
- Soitec
- Bruno Ghyselen
- C30 - CRYSTAL GROWTH
Information Patent Grant
Substrate for epitaxial growth and method for producing same
- Patent number 12,070,923
- Issue date Aug 27, 2024
- Toyo Kohan Co., Ltd.
- Teppei Kurokawa
- B23 - MACHINE TOOLS METAL-WORKING NOT OTHERWISE PROVIDED FOR
Information Patent Grant
Method for growing a GaN single crystal film on a buffer layer on a...
- Patent number 12,065,755
- Issue date Aug 20, 2024
- Haitao Zhang
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method of manufacturing a piezoelectric thin film
- Patent number 12,063,023
- Issue date Aug 13, 2024
- WAVELORD CO., LTD.
- Sang Jeong An
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...

Patents Applicationslast 30 patents

Information Patent Application
NITRIDE SEMICONDUCTOR SUBSTRATE AND METHOD FOR PRODUCING SAME
- Publication number 20250059675
- Publication date Feb 20, 2025
- Shin-Etsu Handotai Co., Ltd.
- Keitaro TSUCHIYA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR SUBSTRATE AND METHOD FOR PRODUCING NITRIDE SE...
- Publication number 20250059676
- Publication date Feb 20, 2025
- Shin-Etsu Handotai Co., Ltd.
- Ippei KUBONO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REDUCING ELECTRICAL ACTIVITY OF DEFECTS IN SILICON CARBIDE GROWN ON...
- Publication number 20250059674
- Publication date Feb 20, 2025
- Anvil Semiconductors Ltd
- Martin Steven Mark LAMB
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PRODUCTION METHOD FOR NITRIDE CRYSTAL SUBSTRATE, AND PEELED INTERME...
- Publication number 20250054754
- Publication date Feb 13, 2025
- Sumitomo Chemical Company, Limited
- Masafumi YOKOYAMA
- C25 - ELECTROLYTIC OR ELECTROPHORETIC PROCESSES APPARATUS THEREFOR
Information Patent Application
PROCESS FOR GROWING ACTIVE LAYERS IN SEQUENCE
- Publication number 20250019861
- Publication date Jan 16, 2025
- LPE S.p.A.
- Giovanni Franco
- C30 - CRYSTAL GROWTH
Information Patent Application
MONOCRYSTALLINE NICKEL-TITANIUM FILMS ON SINGLE CRYSTAL SILICON SUB...
- Publication number 20250019230
- Publication date Jan 16, 2025
- Jagannathan Rajagopalan
- B81 - MICRO-STRUCTURAL TECHNOLOGY
Information Patent Application
SUBSTRATE WITH ß-GALLIUM OXIDE FILM AND PRODUCTION METHOD THEREFOR
- Publication number 20250015144
- Publication date Jan 9, 2025
- NATIONAL UNIVERSITY CORPORATION TOKAI NATIONAL HIGHER EDUCATION AND RESEARCH...
- Masaru HORI
- C30 - CRYSTAL GROWTH
Information Patent Application
LAMINATED STRUCTURE, ELECTRONIC DEVICE, ELECTRONIC APPARATUS, AND M...
- Publication number 20250011970
- Publication date Jan 9, 2025
- Gaianixx Inc.
- Takeshi Kijima
- C30 - CRYSTAL GROWTH
Information Patent Application
SEMICONDUCTOR SUBSTRATE, MANUFACTURING METHOD THEREOF AND MANUFACTU...
- Publication number 20250014897
- Publication date Jan 9, 2025
- Rohm Co., Ltd.
- Makoto TAKAMURA
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PRODUCING HETEROEPITAXIAL WAFER
- Publication number 20240429046
- Publication date Dec 26, 2024
- Shin-Etsu Handotai Co., Ltd.
- Toshiki MATSUBARA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SURFACE EMITTING LASER ELEMENT AND MANUFACTURING METHOD OF THE SAME
- Publication number 20240429680
- Publication date Dec 26, 2024
- Kyoto University
- Susumu NODA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FABRICATION OF N-FACE III-NITRIDES BY REMOTE EPITAXY
- Publication number 20240420955
- Publication date Dec 19, 2024
- Future Semiconductor Business, Inc
- Kyusang Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEED SUBSTRATE FOR EPITAXIAL GROWTH AND METHOD FOR PRODUCING SAME,...
- Publication number 20240417882
- Publication date Dec 19, 2024
- Shin-Etsu Chemical Co., Ltd.
- Yoshihiro KUBOTA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
UNDERLYING SUBSTRATE, SINGLE CRYSTAL DIAMOND LAMINATE SUBSTRATE, AN...
- Publication number 20240417883
- Publication date Dec 19, 2024
- Shin-Etsu Chemical Co., Ltd.
- Hitoshi NOGUCHI
- C30 - CRYSTAL GROWTH
Information Patent Application
SUPERLATTICE STRUCTURE AND MANUFACTURING METHOD THEREFOR
- Publication number 20240410082
- Publication date Dec 12, 2024
- Nippon Telegraph and Telephone Corporation
- Ai Ikeda
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR WAFER TREATMENT
- Publication number 20240412972
- Publication date Dec 12, 2024
- Hua Hsu Silicon Materials Co., Ltd.
- Chiao-Yang Cheng
- C30 - CRYSTAL GROWTH
Information Patent Application
PROCESS FOR GROWTH OF ATOMIC LAYER TRANSITION METAL DICHALCOGENIDES
- Publication number 20240410080
- Publication date Dec 12, 2024
- Honda Motor Co., Ltd.
- Xufan LI
- C30 - CRYSTAL GROWTH
Information Patent Application
COMPOSITE SUBSTRATE AND MANUFACTURING METHOD THEREOF
- Publication number 20240401229
- Publication date Dec 5, 2024
- Rohm Co., Ltd.
- Keiju SATO
- C30 - CRYSTAL GROWTH
Information Patent Application
GROWTH METHOD AND STRUCTURE OF LED EPITAXY
- Publication number 20240405159
- Publication date Dec 5, 2024
- Focus Lightings Tech (Suqian) Co., Ltd.
- Guochang LI
- C30 - CRYSTAL GROWTH
Information Patent Application
COMPOSITE SUBSTRATE AND MANUFACTURING METHOD THEREOF
- Publication number 20240401230
- Publication date Dec 5, 2024
- Rohm Co., Ltd.
- Keiju SATO
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD OF PHASE-TRANSITIONING THREE-DIMENSIONAL DIRAC SEMIMETAL INT...
- Publication number 20240392472
- Publication date Nov 28, 2024
- University-Industry Cooperation Group of Kyung Hee University
- Suk Ho CHOI
- C22 - METALLURGY FERROUS OR NON-FERROUS ALLOYS TREATMENT OF ALLOYS OR NON-FER...
Information Patent Application
GROUP 13 ELEMENT NITRIDE SINGLE CRYSTAL SUBSTRATE, SUBSTRATE FOR EP...
- Publication number 20240392474
- Publication date Nov 28, 2024
- NGK Insulators, Ltd.
- Kentaro NONAKA
- C30 - CRYSTAL GROWTH
Information Patent Application
DOPED DIAMOND PARTICLE-BASED THREE-DIMENSIONAL ELECTRODE FOR WATER...
- Publication number 20240383783
- Publication date Nov 21, 2024
- HU-NAN NEW FRONTIER SCIENCE & TECHNOLOGY LTD.
- Qiuping WEI
- C02 - TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
Information Patent Application
STRUCTURE COMPRISING MONOCRYSTALLINE LAYERS OF ALN MATERIAL ON A SU...
- Publication number 20240384432
- Publication date Nov 21, 2024
- SOITEC
- Bruno Ghyselen
- C30 - CRYSTAL GROWTH
Information Patent Application
NITRIDE SEMICONDUCTOR SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20240379352
- Publication date Nov 14, 2024
- Shin-Etsu Handotai Co., Ltd.
- Kazunori HAGIMOTO
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR SUBSTRATE, NITRIDE S...
- Publication number 20240368804
- Publication date Nov 7, 2024
- Sumitomo Chemical Company, Limited
- Takehiro YOSHIDA
- C30 - CRYSTAL GROWTH
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE
- Publication number 20240371636
- Publication date Nov 7, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Wei-Min Liu
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR SUBSTRATE
- Publication number 20240371628
- Publication date Nov 7, 2024
- Shin-Etsu Handotai Co., Ltd.
- Kazunori HAGIMOTO
- C30 - CRYSTAL GROWTH
Information Patent Application
SEMICONDUCTOR DEVICE WITH TWO-DIMENSIONAL MATERIALS AND FORMING MET...
- Publication number 20240363343
- Publication date Oct 31, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shu-Jui CHANG
- C30 - CRYSTAL GROWTH
Information Patent Application
LOW-TEMPERATURE SELECTIVE EPITAXY CONTACT APPROACH
- Publication number 20240363354
- Publication date Oct 31, 2024
- Applied Materials, Inc.
- He REN
- C30 - CRYSTAL GROWTH

characterised by the substrate

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Single crystal composite synthetic diamond material

Structure for producing diamond and method for manufacturing same

Engineered substrate structures for power and RF applications

Method of producing large GaAs and GaP infrared windows

Gas-phase reactor system-with a reaction chamber, a solid precursor...

Epitaxial alkali halide layers for III-V substrate recycling

Methods of forming silicon carbide coated base substrates at multip...

Preparation method for semiconductor structure

Incorporating semiconductors on a polycrystalline diamond substrate

Growth of A-B crystals without crystal lattice curvature

Ground substrate and method for producing same

Method for manufacturing a composite structure comprising a thin la...

Optimized heteroepitaxial growth of semiconductors

Method of obtaining a smooth surface with epitaxial lateral overgrowth

Optoelectronic device formed on a flexible substrate

Method for producing a nitride layer

Nitride semiconductor template, method for manufacturing nitride se...

Semiconductor wafer and method of manufacturing semiconductor appar...

Method of forming monocrystalline nickel-titanium films on single c...

Optimized heteroepitaxial growth of semiconductors

Surface emitting laser element and manufacturing method of the same

Method of providing a wrinkle pattern or producing a substrate havi...

Self-standing GaN substrate, GaN crystal, method for producing GaN...

Method for producing a SiC substrate via an etching step, growth st...

Large area group III nitride crystals and substrates, methods of ma...

Method for manufacturing nitride semiconductor substrate, nitride s...

Process for producing a monoocrystalline layer of AlN material by t...

Substrate for epitaxial growth and method for producing same

Method for growing a GaN single crystal film on a buffer layer on a...

Method of manufacturing a piezoelectric thin film

Patents Applicationslast 30 patents

NITRIDE SEMICONDUCTOR SUBSTRATE AND METHOD FOR PRODUCING SAME

NITRIDE SEMICONDUCTOR SUBSTRATE AND METHOD FOR PRODUCING NITRIDE SE...

REDUCING ELECTRICAL ACTIVITY OF DEFECTS IN SILICON CARBIDE GROWN ON...

PRODUCTION METHOD FOR NITRIDE CRYSTAL SUBSTRATE, AND PEELED INTERME...

PROCESS FOR GROWING ACTIVE LAYERS IN SEQUENCE

MONOCRYSTALLINE NICKEL-TITANIUM FILMS ON SINGLE CRYSTAL SILICON SUB...

SUBSTRATE WITH ß-GALLIUM OXIDE FILM AND PRODUCTION METHOD THEREFOR

LAMINATED STRUCTURE, ELECTRONIC DEVICE, ELECTRONIC APPARATUS, AND M...

SEMICONDUCTOR SUBSTRATE, MANUFACTURING METHOD THEREOF AND MANUFACTU...

METHOD FOR PRODUCING HETEROEPITAXIAL WAFER

SURFACE EMITTING LASER ELEMENT AND MANUFACTURING METHOD OF THE SAME

FABRICATION OF N-FACE III-NITRIDES BY REMOTE EPITAXY

SEED SUBSTRATE FOR EPITAXIAL GROWTH AND METHOD FOR PRODUCING SAME,...

UNDERLYING SUBSTRATE, SINGLE CRYSTAL DIAMOND LAMINATE SUBSTRATE, AN...

SUPERLATTICE STRUCTURE AND MANUFACTURING METHOD THEREFOR

METHOD FOR WAFER TREATMENT

PROCESS FOR GROWTH OF ATOMIC LAYER TRANSITION METAL DICHALCOGENIDES

COMPOSITE SUBSTRATE AND MANUFACTURING METHOD THEREOF

GROWTH METHOD AND STRUCTURE OF LED EPITAXY

COMPOSITE SUBSTRATE AND MANUFACTURING METHOD THEREOF

METHOD OF PHASE-TRANSITIONING THREE-DIMENSIONAL DIRAC SEMIMETAL INT...

GROUP 13 ELEMENT NITRIDE SINGLE CRYSTAL SUBSTRATE, SUBSTRATE FOR EP...

DOPED DIAMOND PARTICLE-BASED THREE-DIMENSIONAL ELECTRODE FOR WATER...

STRUCTURE COMPRISING MONOCRYSTALLINE LAYERS OF ALN MATERIAL ON A SU...

NITRIDE SEMICONDUCTOR SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME

METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR SUBSTRATE, NITRIDE S...

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE

METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR SUBSTRATE

SEMICONDUCTOR DEVICE WITH TWO-DIMENSIONAL MATERIALS AND FORMING MET...

LOW-TEMPERATURE SELECTIVE EPITAXY CONTACT APPROACH