characterised by the substrate

Industry

CPC
C30B25/18

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CCHEMISTRY METALLURGY C30Crystal growth C30BSINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL REFINING BY ZONE-MELTING OF MATERIAL PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH D... C30B25/00Single-crystal growth by chemical reaction of reactive gases

Current Industry

C30B25/18characterised by the substrate

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Epitaxial growth methods and structures thereof
- Patent number 12,369,374
- Issue date Jul 22, 2025
- Taiwan Semicoductor Manufacturing Co., Ltd.
- Tetsuji Ueno
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Bonded substrate composed of support substrate and group-13 element...
- Patent number 12,359,341
- Issue date Jul 15, 2025
- NGK Insulators, Ltd.
- Shuhei Higashihara
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for the production of a single-crystal film, in particular p...
- Patent number 12,356,858
- Issue date Jul 8, 2025
- Soitec
- Bruno Ghyselen
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Ground substrate and method for producing same
- Patent number 12,351,941
- Issue date Jul 8, 2025
- NGK Insulators, Ltd.
- Morimichi Watanabe
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for on-silicon integration of a component III-V and on-silic...
- Patent number 12,353,068
- Issue date Jul 8, 2025
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- Delphine Neel
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Semiconductor material based on metal nanowires and porous nitride...
- Patent number 12,343,711
- Issue date Jul 1, 2025
- Institute of Semiconductors, Chinese Academy of Sciences
- Lixia Zhao
- B82 - NANO-TECHNOLOGY
Information Patent Grant
III-N heteroepitaxial devices on rock salt substrates
- Patent number 12,344,958
- Issue date Jul 1, 2025
- Alliance for Sustainable Energy, LLC
- Marshall Brooks Tellekamp
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method of preparing a silicon carbide crystal by deposition onto at...
- Patent number 12,338,544
- Issue date Jun 24, 2025
- OCI Company Ltd
- Gabok Kim
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing a layer of aluminum nitride (ALN) on a structu...
- Patent number 12,338,545
- Issue date Jun 24, 2025
- COMMISSARIAT L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
- Maxime Legallais
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Substrates for III-nitride epitaxy
- Patent number 12,331,426
- Issue date Jun 17, 2025
- X-FAB SEMICONDUCTOR FOUNDRIES GMBH
- Victor Sizov
- C30 - CRYSTAL GROWTH
Information Patent Grant
Epitaxial wafer, semiconductor device, and method for manufacturing...
- Patent number 12,334,340
- Issue date Jun 17, 2025
- Mitsubishi Electric Corporation
- Atsushi Era
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for depositing an epitaxial layer on a substrate wafer
- Patent number 12,331,424
- Issue date Jun 17, 2025
- Siltronic AG
- Thomas Stettner
- C30 - CRYSTAL GROWTH
Information Patent Grant
Piezoelectric element, method of manufacturing the same, surface ac...
- Patent number 12,328,108
- Issue date Jun 10, 2025
- Rohm Co., Ltd.
- Noriyuki Shimoji
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for CVD deposition of n-type doped silicon carbide and epita...
- Patent number 12,325,932
- Issue date Jun 10, 2025
- LPE S.P.A.
- Silvio Preti
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing a composite structure comprising a thin la...
- Patent number 12,320,031
- Issue date Jun 3, 2025
- Soitec
- Hugo Biard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing method for semiconductor silicon wafer
- Patent number 12,308,228
- Issue date May 20, 2025
- Globalwafers Japan Co., Ltd
- Takeshi Senda
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method and apparatus for low temperature selective epitaxy in a dee...
- Patent number 12,297,559
- Issue date May 13, 2025
- Applied Materials, Inc.
- Abhishek Dube
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ultra-high ambipolar mobility cubic boron arsenide
- Patent number 12,297,563
- Issue date May 13, 2025
- University of Houston System
- Zhifeng Ren
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Diamond composite body, substrate, diamond, tool including diamond,...
- Patent number 12,286,726
- Issue date Apr 29, 2025
- Sumitomo Electric Industries, Ltd.
- Yoshiki Nishibayashi
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for preparing a self-supporting substrate from a film base s...
- Patent number 12,281,408
- Issue date Apr 22, 2025
- Yiguan Information Technology (Shanghai) Co., Ltd.
- Tao Jiang
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for depositing boron containing silicon germanium layers
- Patent number 12,266,524
- Issue date Apr 1, 2025
- ASM IP Holding B.V.
- Lucas Petersen Barbosa Lima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-powered ultraviolet photodetection performance using Au/Ta2O5/...
- Patent number 12,268,033
- Issue date Apr 1, 2025
- United Arab Emirates University
- Sambasivam Sangaraju
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Fluorescent diamond and method for producing same
- Patent number 12,258,507
- Issue date Mar 25, 2025
- Daicel Corporation
- Motoi Nakao
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Pre-heat ring and substrate processing device
- Patent number 12,258,676
- Issue date Mar 25, 2025
- Jiangsu Alpha-Semiconductor Equipment Co., Ltd.
- Liu Ziqiang
- C30 - CRYSTAL GROWTH
Information Patent Grant
Process for obtaining a nitride layer
- Patent number 12,252,807
- Issue date Mar 18, 2025
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- Guy Feuillet
- C30 - CRYSTAL GROWTH
Information Patent Grant
Graphene hybrids for biological and chemical sensing
- Patent number 12,247,923
- Issue date Mar 11, 2025
- The Penn State Research Foundation
- Joshua A. Robinson
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing a SiC seed crystal for growth of a SiC ingot b...
- Patent number 12,247,319
- Issue date Mar 11, 2025
- Kwansei Gakuin Educational Foundation
- Tadaaki Kaneko
- C30 - CRYSTAL GROWTH
Information Patent Grant
Multilayer film structure and method for producing same
- Patent number 12,247,297
- Issue date Mar 11, 2025
- Tosoh Corporation
- Yuya Tsuchida
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Diamond substrate and method for manufacturing the same
- Patent number 12,241,175
- Issue date Mar 4, 2025
- Chih Shiue Yan
- C30 - CRYSTAL GROWTH
Information Patent Grant
Single crystal composite synthetic diamond material
- Patent number 12,234,570
- Issue date Feb 25, 2025
- ELEMENT SIX (UK) LIMITED
- Andrew Mark Edmonds
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...

Patents Applicationslast 30 patents

Information Patent Application
METHOD FOR MANUFACTURING NITRIDE STACK AND NITRIDE STACK
- Publication number 20250236988
- Publication date Jul 24, 2025
- Sumitomo Chemical Company, Limited
- Shota KANEKI
- C30 - CRYSTAL GROWTH
Information Patent Application
DIAMOND COMPOSITE BODY, SUBSTRATE, DIAMOND, TOOL INCLUDING DIAMOND,...
- Publication number 20250223720
- Publication date Jul 10, 2025
- SUMITOMO ELECTRIC INDUSTRIES LTD.
- Yoshiki NISHIBAYASHI
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
HETEROSTRUCTURES WITH NANOSTRUCTURES OF LAYERED MATERIAL
- Publication number 20250227949
- Publication date Jul 10, 2025
- The Regents of the University of Michigan
- Ping Wang
- C30 - CRYSTAL GROWTH
Information Patent Application
GROUP III NITRIDE STACK AND METHOD OF MANUFACTURING GROUP III NITRI...
- Publication number 20250215614
- Publication date Jul 3, 2025
- Sumitomo Chemical Company, Limited
- Taiki YAMAMOTO
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD OF INSPECTING GROUP-III ELEMENT NITRIDE SUBSTRATE, METHOD OF...
- Publication number 20250201636
- Publication date Jun 19, 2025
- NGK Insulators, Ltd.
- Yoshitaka KURAOKA
- C30 - CRYSTAL GROWTH
Information Patent Application
SEED SUBSTRATE FOR HIGH CHARACTERISTIC EPITAXIAL GROWTH, METHOD FOR...
- Publication number 20250198049
- Publication date Jun 19, 2025
- Shin-Etsu Chemical Co., Ltd.
- Yoshihiro KUBOTA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE CRYSTAL SUBSTRATE AND PRODUCTION METHOD FOR NITRIDE CRYSTAL...
- Publication number 20250198051
- Publication date Jun 19, 2025
- Sumitomo Chemical Company, Limited
- Taichiro KONNO
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR SUPPRESSING FORMATION OF STACKING FAULT, STRUCTURE PRODU...
- Publication number 20250188643
- Publication date Jun 12, 2025
- KWANSEI GAKUIN EDUCATIONAL FOUNDATION
- Tadaaki KANEKO
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON CARBIDE PLATFORMS AND THE MANUFACTURE THEREOF THROUGH SILIC...
- Publication number 20250179685
- Publication date Jun 5, 2025
- HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP.
- Sagi Varghese Mathai
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON WAFER AND EPITAXIAL SILICON WAFER
- Publication number 20250185323
- Publication date Jun 5, 2025
- SUMCO CORPORATION
- Kohtaroh KOGA
- C30 - CRYSTAL GROWTH
Information Patent Application
HYBRID COVALENT-VAN DER WAALS SYSTEM 2D HETEROSTRUCTURES BY DATIVE...
- Publication number 20250171928
- Publication date May 29, 2025
- The Research Foundation for The State University of New York
- Hao ZENG
- C30 - CRYSTAL GROWTH
Information Patent Application
ULTRA-HIGH THERMAL-CONDUCTIVITY DIAMOND AND SYNTHETIC METHOD THEREFOR
- Publication number 20250171926
- Publication date May 29, 2025
- ZHENGZHOU RESEARCH INSTITUTE FOR ABRASIVES & GRINDING CO., LTD.
- Xiaolei WU
- C30 - CRYSTAL GROWTH
Information Patent Application
ATOMIC SCALE FABRICATION OF DIAMOND QUANTUM COMPUTERS
- Publication number 20250174460
- Publication date May 29, 2025
- Quantum Brilliance PTY LTD
- Marcus DOHERTY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR PRODUCING HETEROEPITAXIAL FILM
- Publication number 20250163609
- Publication date May 22, 2025
- Shin-Etsu Handotai Co., Ltd.
- Tsuyoshi OHTSUKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HETEROEPITAXIAL WAFER FOR THE DEPOSITION OF GALLIUM NITRIDE
- Publication number 20250154682
- Publication date May 15, 2025
- Siltronic AG
- Brian MURPHY
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR DEPOSITING BORON CONTAINING SILICON GERMANIUIM LAYERS
- Publication number 20250157814
- Publication date May 15, 2025
- ASM IP HOLDING B.V.
- Lucas Petersen Barbosa Lima
- C30 - CRYSTAL GROWTH
Information Patent Application
UNDERLYING SUBSTRATE, SINGLE CRYSTAL DIAMOND LAMINATE SUBSTRATE AND...
- Publication number 20250154685
- Publication date May 15, 2025
- Shin-Etsu Chemical Co., Ltd.
- Hitoshi NOGUCHI
- C30 - CRYSTAL GROWTH
Information Patent Application
COMPOSITE SUBSTRATE, AND SUBSTRATE FOR EPITAXIALLY GROWING GROUP 13...
- Publication number 20250146179
- Publication date May 8, 2025
- NGK Insulators, Ltd.
- Yoshitaka KURAOKA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ENGINEERED SUBSTRATE STRUCTURES FOR POWER AND RF APPLICATIONS
- Publication number 20250149332
- Publication date May 8, 2025
- QROMIS, Inc.
- Vladimir Odnoblyudov
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
LATTICE POLARITY CONTROL IN III-NITRIDE SEMICONDUCTOR HETEROSTRUCTURES
- Publication number 20250149334
- Publication date May 8, 2025
- The Regents of the University of Michigan
- Ping Wang
- C30 - CRYSTAL GROWTH
Information Patent Application
Structure for Producing Diamond and Method for Manufacturing Same
- Publication number 20250146122
- Publication date May 8, 2025
- National University Corporation Nagaoka University of Technology
- Hideo Aida
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
DIAMOND STRUCTURE AND METHOD OF FORMING A DIAMOND STRUCTURE
- Publication number 20250140554
- Publication date May 1, 2025
- Advanced Diamond Holdings, LLC
- John P. Ciraldo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR LAMINATE, SEMICONDUCTOR ELEMENT, AND SEMICONDUCTOR LA...
- Publication number 20250132151
- Publication date Apr 24, 2025
- Sumitomo Chemical Company, Limited
- Hajime FUJIKURA
- C30 - CRYSTAL GROWTH
Information Patent Application
ENGINEERED SUBSTRATE STRUCTURES FOR POWER AND RF APPLICATIONS
- Publication number 20250132152
- Publication date Apr 24, 2025
- QROMIS,INC.
- Vladimir Odnoblyudov
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
APPARATUS, SYSTEMS, AND METHODS OF USING ATOMIC HYDROGEN RADICALS W...
- Publication number 20250132155
- Publication date Apr 24, 2025
- Applied Materials, Inc.
- Chen-Ying WU
- C30 - CRYSTAL GROWTH
Information Patent Application
PRODUCTION METHOD FOR NITRIDE CRYSTAL SUBSTRATE AND NITRIDE CRYSTAL...
- Publication number 20250129513
- Publication date Apr 24, 2025
- Sumitomo Chemical Company, Limited
- Taichiro KONNO
- C25 - ELECTROLYTIC OR ELECTROPHORETIC PROCESSES APPARATUS THEREFOR
Information Patent Application
EPITAXIAL WAFER AND A METHOD FOR MANUFACTURING AN EPITAXIAL WAFER
- Publication number 20250125141
- Publication date Apr 17, 2025
- SK SILTRON CO., LTD
- Gun Ho LEE
- C30 - CRYSTAL GROWTH
Information Patent Application
GaN CRYSTAL AND GaN WAFER
- Publication number 20250122642
- Publication date Apr 17, 2025
- MITSUBISHI CHEMICAL CORPORATION
- Yusuke TSUKADA
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PRODUCING GROUP III NITRIDE SEMICONDUCTOR
- Publication number 20250122643
- Publication date Apr 17, 2025
- Toyoda Gosei Co., Ltd.
- Koji OKUNO
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PRODUCING A CONTINUOUS NITRIDE LAYER
- Publication number 20250118552
- Publication date Apr 10, 2025
- Commissariat A L'Energie Atomique et Aux Energies Alternatives
- Matthew CHARLES
- C30 - CRYSTAL GROWTH

characterised by the substrate

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Epitaxial growth methods and structures thereof

Bonded substrate composed of support substrate and group-13 element...

Method for the production of a single-crystal film, in particular p...

Ground substrate and method for producing same

Method for on-silicon integration of a component III-V and on-silic...

Semiconductor material based on metal nanowires and porous nitride...

III-N heteroepitaxial devices on rock salt substrates

Method of preparing a silicon carbide crystal by deposition onto at...

Method for producing a layer of aluminum nitride (ALN) on a structu...

Substrates for III-nitride epitaxy

Epitaxial wafer, semiconductor device, and method for manufacturing...

Method for depositing an epitaxial layer on a substrate wafer

Piezoelectric element, method of manufacturing the same, surface ac...

Method for CVD deposition of n-type doped silicon carbide and epita...

Method for manufacturing a composite structure comprising a thin la...

Manufacturing method for semiconductor silicon wafer

Method and apparatus for low temperature selective epitaxy in a dee...

Ultra-high ambipolar mobility cubic boron arsenide

Diamond composite body, substrate, diamond, tool including diamond,...

Method for preparing a self-supporting substrate from a film base s...

Method for depositing boron containing silicon germanium layers

Self-powered ultraviolet photodetection performance using Au/Ta2O5/...

Fluorescent diamond and method for producing same

Pre-heat ring and substrate processing device

Process for obtaining a nitride layer

Graphene hybrids for biological and chemical sensing

Method for producing a SiC seed crystal for growth of a SiC ingot b...

Multilayer film structure and method for producing same

Diamond substrate and method for manufacturing the same

Single crystal composite synthetic diamond material

Patents Applicationslast 30 patents

METHOD FOR MANUFACTURING NITRIDE STACK AND NITRIDE STACK

DIAMOND COMPOSITE BODY, SUBSTRATE, DIAMOND, TOOL INCLUDING DIAMOND,...

HETEROSTRUCTURES WITH NANOSTRUCTURES OF LAYERED MATERIAL

GROUP III NITRIDE STACK AND METHOD OF MANUFACTURING GROUP III NITRI...

METHOD OF INSPECTING GROUP-III ELEMENT NITRIDE SUBSTRATE, METHOD OF...

SEED SUBSTRATE FOR HIGH CHARACTERISTIC EPITAXIAL GROWTH, METHOD FOR...

NITRIDE CRYSTAL SUBSTRATE AND PRODUCTION METHOD FOR NITRIDE CRYSTAL...

METHOD FOR SUPPRESSING FORMATION OF STACKING FAULT, STRUCTURE PRODU...

SILICON CARBIDE PLATFORMS AND THE MANUFACTURE THEREOF THROUGH SILIC...

SILICON WAFER AND EPITAXIAL SILICON WAFER

HYBRID COVALENT-VAN DER WAALS SYSTEM 2D HETEROSTRUCTURES BY DATIVE...

ULTRA-HIGH THERMAL-CONDUCTIVITY DIAMOND AND SYNTHETIC METHOD THEREFOR

ATOMIC SCALE FABRICATION OF DIAMOND QUANTUM COMPUTERS

METHOD FOR PRODUCING HETEROEPITAXIAL FILM

HETEROEPITAXIAL WAFER FOR THE DEPOSITION OF GALLIUM NITRIDE

METHOD FOR DEPOSITING BORON CONTAINING SILICON GERMANIUIM LAYERS

UNDERLYING SUBSTRATE, SINGLE CRYSTAL DIAMOND LAMINATE SUBSTRATE AND...

COMPOSITE SUBSTRATE, AND SUBSTRATE FOR EPITAXIALLY GROWING GROUP 13...

ENGINEERED SUBSTRATE STRUCTURES FOR POWER AND RF APPLICATIONS

LATTICE POLARITY CONTROL IN III-NITRIDE SEMICONDUCTOR HETEROSTRUCTURES

Structure for Producing Diamond and Method for Manufacturing Same

DIAMOND STRUCTURE AND METHOD OF FORMING A DIAMOND STRUCTURE

SEMICONDUCTOR LAMINATE, SEMICONDUCTOR ELEMENT, AND SEMICONDUCTOR LA...

ENGINEERED SUBSTRATE STRUCTURES FOR POWER AND RF APPLICATIONS

APPARATUS, SYSTEMS, AND METHODS OF USING ATOMIC HYDROGEN RADICALS W...

PRODUCTION METHOD FOR NITRIDE CRYSTAL SUBSTRATE AND NITRIDE CRYSTAL...

EPITAXIAL WAFER AND A METHOD FOR MANUFACTURING AN EPITAXIAL WAFER

GaN CRYSTAL AND GaN WAFER

METHOD FOR PRODUCING GROUP III NITRIDE SEMICONDUCTOR

METHOD FOR PRODUCING A CONTINUOUS NITRIDE LAYER