characterised by the substrate

Industry

CPC
C30B25/18

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CCHEMISTRY METALLURGY C30Crystal growth C30BSINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL REFINING BY ZONE-MELTING OF MATERIAL PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH D... C30B25/00Single-crystal growth by chemical reaction of reactive gases

Current Industry

C30B25/18characterised by the substrate

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Method and apparatus for low temperature selective epitaxy in a dee...
- Patent number 12,297,559
- Issue date May 13, 2025
- Applied Materials, Inc.
- Abhishek Dube
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ultra-high ambipolar mobility cubic boron arsenide
- Patent number 12,297,563
- Issue date May 13, 2025
- University of Houston System
- Zhifeng Ren
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Diamond composite body, substrate, diamond, tool including diamond,...
- Patent number 12,286,726
- Issue date Apr 29, 2025
- Sumitomo Electric Industries, Ltd.
- Yoshiki Nishibayashi
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for preparing a self-supporting substrate from a film base s...
- Patent number 12,281,408
- Issue date Apr 22, 2025
- Yiguan Information Technology (Shanghai) Co., Ltd.
- Tao Jiang
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for depositing boron containing silicon germanium layers
- Patent number 12,266,524
- Issue date Apr 1, 2025
- ASM IP Holding B.V.
- Lucas Petersen Barbosa Lima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-powered ultraviolet photodetection performance using Au/Ta2O5/...
- Patent number 12,268,033
- Issue date Apr 1, 2025
- United Arab Emirates University
- Sambasivam Sangaraju
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Fluorescent diamond and method for producing same
- Patent number 12,258,507
- Issue date Mar 25, 2025
- Daicel Corporation
- Motoi Nakao
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Pre-heat ring and substrate processing device
- Patent number 12,258,676
- Issue date Mar 25, 2025
- Jiangsu Alpha-Semiconductor Equipment Co., Ltd.
- Liu Ziqiang
- C30 - CRYSTAL GROWTH
Information Patent Grant
Process for obtaining a nitride layer
- Patent number 12,252,807
- Issue date Mar 18, 2025
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- Guy Feuillet
- C30 - CRYSTAL GROWTH
Information Patent Grant
Graphene hybrids for biological and chemical sensing
- Patent number 12,247,923
- Issue date Mar 11, 2025
- The Penn State Research Foundation
- Joshua A. Robinson
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing a SiC seed crystal for growth of a SiC ingot b...
- Patent number 12,247,319
- Issue date Mar 11, 2025
- Kwansei Gakuin Educational Foundation
- Tadaaki Kaneko
- C30 - CRYSTAL GROWTH
Information Patent Grant
Multilayer film structure and method for producing same
- Patent number 12,247,297
- Issue date Mar 11, 2025
- Tosoh Corporation
- Yuya Tsuchida
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Diamond substrate and method for manufacturing the same
- Patent number 12,241,175
- Issue date Mar 4, 2025
- Chih Shiue Yan
- C30 - CRYSTAL GROWTH
Information Patent Grant
Single crystal composite synthetic diamond material
- Patent number 12,234,570
- Issue date Feb 25, 2025
- ELEMENT SIX (UK) LIMITED
- Andrew Mark Edmonds
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Structure for producing diamond and method for manufacturing same
- Patent number 12,227,828
- Issue date Feb 18, 2025
- National University Corporation Nagaoka University of Technology
- Hideo Aida
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Engineered substrate structures for power and RF applications
- Patent number 12,217,957
- Issue date Feb 4, 2025
- QROMIS, Inc.
- Vladimir Odnoblyudov
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method of producing large GaAs and GaP infrared windows
- Patent number 12,203,191
- Issue date Jan 21, 2025
- BAE Systems Information and Electronic Systems Integration Inc.
- Peter G. Schunemann
- C30 - CRYSTAL GROWTH
Information Patent Grant
Gas-phase reactor system-with a reaction chamber, a solid precursor...
- Patent number 12,195,876
- Issue date Jan 14, 2025
- ASM IP Holding B.V.
- John Tolle
- C30 - CRYSTAL GROWTH
Information Patent Grant
Epitaxial alkali halide layers for III-V substrate recycling
- Patent number 12,198,924
- Issue date Jan 14, 2025
- Alliance for Sustainable Energy, LLC
- Brelon James May
- B08 - CLEANING
Information Patent Grant
Methods of forming silicon carbide coated base substrates at multip...
- Patent number 12,180,611
- Issue date Dec 31, 2024
- Applied Materials, Inc.
- Yen Lin Leow
- C30 - CRYSTAL GROWTH
Information Patent Grant
Preparation method for semiconductor structure
- Patent number 12,183,576
- Issue date Dec 31, 2024
- ENKRIS SEMICONDUCTOR, INC.
- Peng Xiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Incorporating semiconductors on a polycrystalline diamond substrate
- Patent number 12,176,221
- Issue date Dec 24, 2024
- Texas State University
- Raju Ahmed
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Growth of A-B crystals without crystal lattice curvature
- Patent number 12,168,839
- Issue date Dec 17, 2024
- Freiberger Compound Materials GMBH
- Berndt Weinert
- C30 - CRYSTAL GROWTH
Information Patent Grant
Ground substrate and method for producing same
- Patent number 12,163,249
- Issue date Dec 10, 2024
- NGK Insulators, Ltd.
- Morimichi Watanabe
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for manufacturing a composite structure comprising a thin la...
- Patent number 12,159,781
- Issue date Dec 3, 2024
- Soitec
- Hugo Biard
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Optimized heteroepitaxial growth of semiconductors
- Patent number 12,157,956
- Issue date Dec 3, 2024
- United States of America as represented by the Secretary of the Air Force
- Vladimir Tassev
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of obtaining a smooth surface with epitaxial lateral overgrowth
- Patent number 12,146,237
- Issue date Nov 19, 2024
- The Regents of the University of California
- Takeshi Kamikawa
- C30 - CRYSTAL GROWTH
Information Patent Grant
Optoelectronic device formed on a flexible substrate
- Patent number 12,142,702
- Issue date Nov 12, 2024
- King Abdullah University of Science and Technology
- Xiao Tang
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for producing a nitride layer
- Patent number 12,134,836
- Issue date Nov 5, 2024
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- Matthew Charles
- C30 - CRYSTAL GROWTH
Information Patent Grant
Nitride semiconductor template, method for manufacturing nitride se...
- Patent number 12,129,572
- Issue date Oct 29, 2024
- Sumitomo Chemical Company, Limited
- Hajime Fujikura
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...

Patents Applicationslast 30 patents

Information Patent Application
HETEROEPITAXIAL WAFER FOR THE DEPOSITION OF GALLIUM NITRIDE
- Publication number 20250154682
- Publication date May 15, 2025
- Siltronic AG
- Brian MURPHY
- C30 - CRYSTAL GROWTH
Information Patent Application
UNDERLYING SUBSTRATE, SINGLE CRYSTAL DIAMOND LAMINATE SUBSTRATE AND...
- Publication number 20250154685
- Publication date May 15, 2025
- Shin-Etsu Chemical Co., Ltd.
- Hitoshi NOGUCHI
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR DEPOSITING BORON CONTAINING SILICON GERMANIUIM LAYERS
- Publication number 20250157814
- Publication date May 15, 2025
- ASM IP HOLDING B.V.
- Lucas Petersen Barbosa Lima
- C30 - CRYSTAL GROWTH
Information Patent Application
ENGINEERED SUBSTRATE STRUCTURES FOR POWER AND RF APPLICATIONS
- Publication number 20250149332
- Publication date May 8, 2025
- QROMIS, Inc.
- Vladimir Odnoblyudov
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
COMPOSITE SUBSTRATE, AND SUBSTRATE FOR EPITAXIALLY GROWING GROUP 13...
- Publication number 20250146179
- Publication date May 8, 2025
- NGK Insulators, Ltd.
- Yoshitaka KURAOKA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATTICE POLARITY CONTROL IN III-NITRIDE SEMICONDUCTOR HETEROSTRUCTURES
- Publication number 20250149334
- Publication date May 8, 2025
- The Regents of the University of Michigan
- Ping Wang
- C30 - CRYSTAL GROWTH
Information Patent Application
Structure for Producing Diamond and Method for Manufacturing Same
- Publication number 20250146122
- Publication date May 8, 2025
- National University Corporation Nagaoka University of Technology
- Hideo Aida
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
DIAMOND STRUCTURE AND METHOD OF FORMING A DIAMOND STRUCTURE
- Publication number 20250140554
- Publication date May 1, 2025
- Advanced Diamond Holdings, LLC
- John P. Ciraldo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR LAMINATE, SEMICONDUCTOR ELEMENT, AND SEMICONDUCTOR LA...
- Publication number 20250132151
- Publication date Apr 24, 2025
- Sumitomo Chemical Company, Limited
- Hajime FUJIKURA
- C30 - CRYSTAL GROWTH
Information Patent Application
ENGINEERED SUBSTRATE STRUCTURES FOR POWER AND RF APPLICATIONS
- Publication number 20250132152
- Publication date Apr 24, 2025
- QROMIS,INC.
- Vladimir Odnoblyudov
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
APPARATUS, SYSTEMS, AND METHODS OF USING ATOMIC HYDROGEN RADICALS W...
- Publication number 20250132155
- Publication date Apr 24, 2025
- Applied Materials, Inc.
- Chen-Ying WU
- C30 - CRYSTAL GROWTH
Information Patent Application
PRODUCTION METHOD FOR NITRIDE CRYSTAL SUBSTRATE AND NITRIDE CRYSTAL...
- Publication number 20250129513
- Publication date Apr 24, 2025
- Sumitomo Chemical Company, Limited
- Taichiro KONNO
- C25 - ELECTROLYTIC OR ELECTROPHORETIC PROCESSES APPARATUS THEREFOR
Information Patent Application
EPITAXIAL WAFER AND A METHOD FOR MANUFACTURING AN EPITAXIAL WAFER
- Publication number 20250125141
- Publication date Apr 17, 2025
- SK SILTRON CO., LTD
- Gun Ho LEE
- C30 - CRYSTAL GROWTH
Information Patent Application
GaN CRYSTAL AND GaN WAFER
- Publication number 20250122642
- Publication date Apr 17, 2025
- MITSUBISHI CHEMICAL CORPORATION
- Yusuke TSUKADA
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PRODUCING GROUP III NITRIDE SEMICONDUCTOR
- Publication number 20250122643
- Publication date Apr 17, 2025
- Toyoda Gosei Co., Ltd.
- Koji OKUNO
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PRODUCING A CONTINUOUS NITRIDE LAYER
- Publication number 20250118552
- Publication date Apr 10, 2025
- Commissariat A L'Energie Atomique et Aux Energies Alternatives
- Matthew CHARLES
- C30 - CRYSTAL GROWTH
Information Patent Application
LOW ENERGY TREATMENT TO PASSIVATE SiC SUBSTRATE DEFECTS
- Publication number 20250112043
- Publication date Apr 3, 2025
- Applied Materials, Inc.
- Vikram M. BHOSLE
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METAL ORGANIC CHEMICAL VAPOR DEPOSITION OF SEMI-INSULATING EXTRINSI...
- Publication number 20250109524
- Publication date Apr 3, 2025
- Wisconsin Alumni Research Foundation
- Shubhra S. Pasayat
- C30 - CRYSTAL GROWTH
Information Patent Application
HIGH-CHARACTERISTIC EPITAXIAL GROWTH SUBSTRATE AND METHOD FOR MANUF...
- Publication number 20250101630
- Publication date Mar 27, 2025
- Shin-Etsu Chemical Co., Ltd.
- Yoshihiro KUBOTA
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON CARBIDE HETEROJUNCTION NORMALLY-OFF HIGH-ELECTRON-MOBILITY...
- Publication number 20250092567
- Publication date Mar 20, 2025
- Wenzhou University
- Wensheng Wei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GAS-PHASE REACTOR SYSTEM-WITH A REACTION CHAMBER, A SOLID PRECURSOR...
- Publication number 20250092566
- Publication date Mar 20, 2025
- ASM IP HOLDING B.V.
- John Tolle
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
APPARATUS, SYSTEMS, AND METHODS OF USING ATOMIC HYDROGEN RADICALS W...
- Publication number 20250087485
- Publication date Mar 13, 2025
- Applied Materials, Inc.
- Chen-Ying WU
- C30 - CRYSTAL GROWTH
Information Patent Application
Gallium-Oxide-On-Silicon (GaOxS)
- Publication number 20250087484
- Publication date Mar 13, 2025
- Board of Regents, The University of Texas System
- Alexander A. Demkov
- C30 - CRYSTAL GROWTH
Information Patent Application
INCORPORATING SEMICONDUCTORS ON A POLYCRYSTALLINE DIAMOND SUBSTRATE
- Publication number 20250079188
- Publication date Mar 6, 2025
- Texas State University
- Raju Ahmed
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUBSTRATE COATED WITH A SILICON-CARBIDE (SIC) LAYER AND A METHOD OF...
- Publication number 20250075370
- Publication date Mar 6, 2025
- STMicroelectronics International N.V.
- Björn MAGNUSSON LINDGREN
- C30 - CRYSTAL GROWTH
Information Patent Application
NITRIDE SEMICONDUCTOR SUBSTRATE AND METHOD FOR PRODUCING SAME
- Publication number 20250059675
- Publication date Feb 20, 2025
- Shin-Etsu Handotai Co., Ltd.
- Keitaro TSUCHIYA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR SUBSTRATE AND METHOD FOR PRODUCING NITRIDE SE...
- Publication number 20250059676
- Publication date Feb 20, 2025
- Shin-Etsu Handotai Co., Ltd.
- Ippei KUBONO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REDUCING ELECTRICAL ACTIVITY OF DEFECTS IN SILICON CARBIDE GROWN ON...
- Publication number 20250059674
- Publication date Feb 20, 2025
- Anvil Semiconductors Ltd
- Martin Steven Mark LAMB
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PRODUCTION METHOD FOR NITRIDE CRYSTAL SUBSTRATE, AND PEELED INTERME...
- Publication number 20250054754
- Publication date Feb 13, 2025
- Sumitomo Chemical Company, Limited
- Masafumi YOKOYAMA
- C25 - ELECTROLYTIC OR ELECTROPHORETIC PROCESSES APPARATUS THEREFOR
Information Patent Application
PROCESS FOR GROWING ACTIVE LAYERS IN SEQUENCE
- Publication number 20250019861
- Publication date Jan 16, 2025
- LPE S.p.A.
- Giovanni Franco
- C30 - CRYSTAL GROWTH

characterised by the substrate

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Method and apparatus for low temperature selective epitaxy in a dee...

Ultra-high ambipolar mobility cubic boron arsenide

Diamond composite body, substrate, diamond, tool including diamond,...

Method for preparing a self-supporting substrate from a film base s...

Method for depositing boron containing silicon germanium layers

Self-powered ultraviolet photodetection performance using Au/Ta2O5/...

Fluorescent diamond and method for producing same

Pre-heat ring and substrate processing device

Process for obtaining a nitride layer

Graphene hybrids for biological and chemical sensing

Method for producing a SiC seed crystal for growth of a SiC ingot b...

Multilayer film structure and method for producing same

Diamond substrate and method for manufacturing the same

Single crystal composite synthetic diamond material

Structure for producing diamond and method for manufacturing same

Engineered substrate structures for power and RF applications

Method of producing large GaAs and GaP infrared windows

Gas-phase reactor system-with a reaction chamber, a solid precursor...

Epitaxial alkali halide layers for III-V substrate recycling

Methods of forming silicon carbide coated base substrates at multip...

Preparation method for semiconductor structure

Incorporating semiconductors on a polycrystalline diamond substrate

Growth of A-B crystals without crystal lattice curvature

Ground substrate and method for producing same

Method for manufacturing a composite structure comprising a thin la...

Optimized heteroepitaxial growth of semiconductors

Method of obtaining a smooth surface with epitaxial lateral overgrowth

Optoelectronic device formed on a flexible substrate

Method for producing a nitride layer

Nitride semiconductor template, method for manufacturing nitride se...

Patents Applicationslast 30 patents

HETEROEPITAXIAL WAFER FOR THE DEPOSITION OF GALLIUM NITRIDE

UNDERLYING SUBSTRATE, SINGLE CRYSTAL DIAMOND LAMINATE SUBSTRATE AND...

METHOD FOR DEPOSITING BORON CONTAINING SILICON GERMANIUIM LAYERS

ENGINEERED SUBSTRATE STRUCTURES FOR POWER AND RF APPLICATIONS

COMPOSITE SUBSTRATE, AND SUBSTRATE FOR EPITAXIALLY GROWING GROUP 13...

LATTICE POLARITY CONTROL IN III-NITRIDE SEMICONDUCTOR HETEROSTRUCTURES

Structure for Producing Diamond and Method for Manufacturing Same

DIAMOND STRUCTURE AND METHOD OF FORMING A DIAMOND STRUCTURE

SEMICONDUCTOR LAMINATE, SEMICONDUCTOR ELEMENT, AND SEMICONDUCTOR LA...

ENGINEERED SUBSTRATE STRUCTURES FOR POWER AND RF APPLICATIONS

APPARATUS, SYSTEMS, AND METHODS OF USING ATOMIC HYDROGEN RADICALS W...

PRODUCTION METHOD FOR NITRIDE CRYSTAL SUBSTRATE AND NITRIDE CRYSTAL...

EPITAXIAL WAFER AND A METHOD FOR MANUFACTURING AN EPITAXIAL WAFER

GaN CRYSTAL AND GaN WAFER

METHOD FOR PRODUCING GROUP III NITRIDE SEMICONDUCTOR

METHOD FOR PRODUCING A CONTINUOUS NITRIDE LAYER

LOW ENERGY TREATMENT TO PASSIVATE SiC SUBSTRATE DEFECTS

METAL ORGANIC CHEMICAL VAPOR DEPOSITION OF SEMI-INSULATING EXTRINSI...

HIGH-CHARACTERISTIC EPITAXIAL GROWTH SUBSTRATE AND METHOD FOR MANUF...

SILICON CARBIDE HETEROJUNCTION NORMALLY-OFF HIGH-ELECTRON-MOBILITY...

GAS-PHASE REACTOR SYSTEM-WITH A REACTION CHAMBER, A SOLID PRECURSOR...

APPARATUS, SYSTEMS, AND METHODS OF USING ATOMIC HYDROGEN RADICALS W...

Gallium-Oxide-On-Silicon (GaOxS)

INCORPORATING SEMICONDUCTORS ON A POLYCRYSTALLINE DIAMOND SUBSTRATE

SUBSTRATE COATED WITH A SILICON-CARBIDE (SIC) LAYER AND A METHOD OF...

NITRIDE SEMICONDUCTOR SUBSTRATE AND METHOD FOR PRODUCING SAME

NITRIDE SEMICONDUCTOR SUBSTRATE AND METHOD FOR PRODUCING NITRIDE SE...

REDUCING ELECTRICAL ACTIVITY OF DEFECTS IN SILICON CARBIDE GROWN ON...

PRODUCTION METHOD FOR NITRIDE CRYSTAL SUBSTRATE, AND PEELED INTERME...

PROCESS FOR GROWING ACTIVE LAYERS IN SEQUENCE