The present invention relates in general to integrated circuit packaging, and more particularly to an integrated circuit package for micro electro-mechanical systems integrated circuit chips and a method of manufacturing the same.
High performance integrated circuit (IC) packages are well known in the art. Improvements in IC packages are driven by industry demands for increased thermal and electrical performance and decreased size and cost of manufacture.
Micro electro-mechanical systems (MEMS) integrated circuit chips and micro optic electromechanical (MOEMS) integrated circuit chips (all generally referred to herein as MEMS) are unique chips used in a variety of applications. MEMS chips commonly include sensors for the detection of signals, such as motion, light, sound, pressure, chemical, radio waves, etc. and are generally employed in carrying out specific tasks based on programmable logic.
Improvements in integrated circuit packages including MEMS chips are driven by traditional industry demands as well as additional demands for properties that are uniquely desirable for MEMS packages. Some of these desired properties for MEMS packaging include, for example, high chip placement accuracy for MEMS packages used in photonics, effective signal transmission to the sensor area of the MEMS chip, and good isolation of the sensor area of the MEMS chip from packaging materials for protection against stress, freedom of movement for parts of motion sensing chips, and protection of the sensor against damage. Other desirable properties include high mechanical rigidity, high degree of die cleanliness and good reliability.
In the past, MEMS integrated circuit packages have been manufactured in several different ways. These packages have limitations, however, such as low cost-effectiveness, die placement accuracy, signal transmission and other limitations.
It is desirable to provide a MEMS integrated circuit package with improved properties desirable in MEMS and optical sensor packages.
In one aspect of the present invention, there is provided a process for fabricating an integrated circuit package. The process includes: providing a substrate having conductive traces therein, the substrate also having a cavity therein; mounting a semiconductor die to a first surface of the substrate, in a flip-chip orientation such that a sensor portion of the semiconductor die is aligned with the cavity and conductive interconnects connect pads of the semiconductor die to the conductive traces of the substrate; filling an area surrounding the interconnects with an underfill material; and mounting a plurality of conductive balls on the first surface of the substrate and in electrical connection with the conductive traces such that ones of the conductive balls are connected to ones of the pads of the semiconductor die via the conductive traces.
In another aspect of the present invention, there is provided an integrated circuit package. The package includes a substrate having conductive traces therein, the substrate also having a cavity therein. A semiconductor die is mounted to a first surface of the substrate, in a flip-chip orientation such that a sensor portion of the semiconductor die is aligned with the cavity and conductive interconnects connect pads of the semiconductor die to the conductive traces of the substrate. An underfill material surrounds the interconnects. A plurality of conductive balls are disposed on the first surface of the substrate, the conductive balls being electrically connected to the conductive traces such that ones of the conductive balls are connected to ones of the pads of the semiconductor die via the conductive traces.
Several advantages are realized in aspects of embodiments of the present invention. The flip-chip orientation of the semiconductor die provides high placement accuracy. The process for manufacturing the package permits different media to be placed in contact with the sensor portion of the die for increasing signal transmission while inhibiting signal distortion caused by the packaging media. The underfill material provides protection against stress induced on the interconnect due to thermal mismatch between the die and substrate. Reliability of the package is enhanced by reducing the interface to the die.
The invention will be better understood with reference to the drawings and the following description, in which:
Reference is first made to
The integrated circuit package 20 will now be described in more detail with reference to
The substrate 22 is in the form of a strip for producing a number of integrated circuit packages 20. Only one such unit is depicted in
Referring now to
The area around the conductive interconnects 32 is then filled with a thermosetting polymer, referred to above as the underfill material 34. The underfill material 34 surrounds the interconnects 32 and fills the area between the semiconductor die 28 and the substrate 22, as shown in
Next, the plurality of conductive balls 36, commonly referred to as solder bumps, are placed on the first surface 24 of the substrate 22, in connection with ones of the conductive traces of the substrate 22, by conventional positioning (
Singulation of the individual integrated circuit package 20 from the strip is then performed either by saw singulation or die punching, resulting in the configuration shown in
Reference is now made to
Referring to
Singulation of the individual integrated circuit package 20 from the strip is then performed either by saw singulation or die punching, resulting in the configuration shown in
Several variations and modifications can be made to the embodiments described herein. An alternative embodiment of the package is shown in
In another embodiment, a lid 42 of, for example, glass is attached to the second surface 26 of the substrate 22, thereby covering and protecting the sensor portion 30 of the semiconductor die 28, as shown in
Other materials can be used to cover the sensor portion 30 of the semiconductor die 28, depending on the intended application of the integrated circuit package 20. These materials are used, for example, for light filters, stress absorbers, ionic corrosion protection or many other functions. For example, for photonic applications, the sensor portion 30 is covered with either air accompanied by a glass lid or with a transparent encapsulant. In other exemplary applications, light filters are also employed. Clearly, transmission is an important aspect and appropriate materials are selected to inhibit selective blocking of desired wavelengths by package media. For a pressure sensor application, the sensor portion 30 is covered either with air or with a low stress encapsulant. In this application, appropriate materials are selected to inhibit thermally variable stresses exerted by packaging media on the die and to inhibit pressure damping by the material. A motion sensor includes moveable parts and for this application the sensor portion 30 is covered by air.
Specific embodiments and variations of embodiments of the present invention have been shown and described herein. However, other variations and modifications to these embodiments may occur to those skilled in the art. For example, the substrate 22 is not limited to the BT resin/glass epoxy printed circuit board as described and other suitable substrate materials can be employed. Also, the conductive interconnects 32 are not limited to solder ball conductive interconnects, as described. Other conductive interconnect materials can be used, including, for example, gold, copper, aluminum and conductive polymers.
Still other variations and modifications may occur to those skilled in the art. All such modifications and variations are believed to be within the sphere and scope of the present invention.
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