Claims
- 1. A semiconductor device comprising:
- insulating substrate means having a prescribed crystallographic orientation in which an exposed surface displays an anisotropic thermal expansion,
- a layer of piezoresistive semiconductive material epitaxially deposited on said exposed surface of said insulating substrate in a preferred crystallographic orientation so that said layer is maintained in an anisotropically stressed condition by said substrate means and exhibits a changed average mobility and a preferred direction of mobility of charge carriers therein, and
- at least one region of semiconductor material of said device being located in said layer and oriented so that current passes therethrough in the preferred direction of mobility established in said layer,
- wherein the substrate is sapphire and has its (1122) plane exposed and said semiconductor film has its (221) crystallographic face exposed.
UNITED STATES GOVERNMENT INTEREST
The invention herein described was made in the course of or under Contract No. DAAHO1-7O-C-1311 of the Advanced Research Project Agency, ARPA Order No. 1585.
US Referenced Citations (8)