Claims
- 1. A fabrication method, comprising the steps of:(a.) etching an opening into a layer of dielectric containing a conductive structure; (b.) performing a dry etch which isotropically removes portions of said conductive structure which are adjacent said opening, wherein said step of performing a dry etch cleans residue produced by said step of etching an opening from said opening.
- 2. The method of claim 1, further comprising the step of (c.) depositing a second dielectric into at least a portion of the space where said conductive structure was removed.
- 3. The method of claim 1, wherein said step (a.) is performed in multiple steps.
- 4. A fabrication method, comprising the steps of:(a.) forming an array of capacitors and covering said array of capacitors with a first dielectric; (b.) forming an opening through said first dielectric and through a portion of one of said capacitors, to contact a conductive structure underlying said one of said capacitors; (c.) performing a dry etch which isotropically etches portions of said one of said capacitors to produce a void adjacent to said opening; wherein said dry etch cleans said opening, of materials produced by said step of forming an opening.
- 5. The method of claim 4, further comprising the step of (d.) filling said void with a second dielectric.
- 6. The method of claim 4, wherein said array of capacitors overlies a corresponding array of transistors.
- 7. The method of claim 4, wherein said step (b.) is performed in multiple steps.
- 8. The method of claim 1, wherein said step of performing a dry etch comprises a gas chemistry comprising O2 and CFx.
- 9. The method of claim 1, wherein said step of performing a dry etch comprises a gas chemistry comprising O2 and SF6.
- 10. The method of claim 4, wherein said step of performing a dry etch comprises a gas chemistry comprising O2 and CFx.
- 11. The method of claim 4, wherein said step of performing a dry etch comprises a gas chemistry comprising O2 and SF6.
Parent Case Info
This application claims priority under 35 USC §119(e)(1) of provisional application no. 60/090,155 filed Jun. 22,1998.
Foreign Referenced Citations (1)
Number |
Date |
Country |
04-134856 |
May 1992 |
JP |
Provisional Applications (1)
|
Number |
Date |
Country |
|
60/090155 |
Jun 1998 |
US |