Claims
- 1. A body of single crystal silicon material having a region incorporating hydrogen in a sufficient concentration to have a band gap energy in excess of 1.1 eV.
- 2. The body according to claim 1 wherein said region has a band gap energy between 1.1 eV and 1.7 eV.
- 3. The body according to claim 2 wherein said region is from about 0.05 to about 1.0 micrometer thick.
- 4. A single crystal silicon solar cell comprising:
- a body of single crystal silicon having regions of differing conductivity forming a photovoltaic junction therein, said body having opposed major surfaces wherein the major surface which is adapted to be incident to solar radiation has a region thereunder with sufficient concentration of hydrogen incorporated therein to have a band gap energy which is greater than the band gap energy of the single crystal silicon of said body; and
- means for electrically contacting said opposed major surfaces.
- 5. The single crystal solar cell according to claim 4 wherein said region has a band gap energy in excess of 1.1 eV and a thickness of from about 0.1 to about 1.0 micrometer.
Parent Case Info
This is a division of application Ser. No. 145,239, filed Apr. 30, 1980, now U.S. Pat. No. 4,322,253.
Government Interests
The Government of the United States of America has rights in this invention pursuant to contract AC03-78ET21074 awarded by the Department of Energy.
US Referenced Citations (1)
Number |
Name |
Date |
Kind |
4113514 |
Pankove et al. |
Sep 1978 |
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Divisions (1)
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Number |
Date |
Country |
Parent |
145239 |
Apr 1980 |
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