Claims
- 1. A solid state device including a first layer having a first surface and a pattern of electrically conducting lines thereon, each of said lines comprising a single layer of like material, each of said single layers comprising a succession of grains forming a chain-shaped structure, each of said grains extending from side to side and from top to bottom of the respective one of said single layers, said line having a length much greater than said width to permit the formation of a significantly long chain of grains therein.
- 2. A solid state device in accordance with claim 1 wherein said grains are oriented in a {111} direction.
- 3. A solid state device in accordance with claim 2 wherein said first layer comprises SiO.sub.2 and said pattern is made from a class of materials consisting of aluminum and aluminum alloys.
- 4. A solid state device in accordance with claim 3 wherein said SiO.sub.2 layer is formed on a semiconductor substrate.
- 5. A solid state device in accordance with claim 4 wherein said substrate is silicon.
- 6. A solid state device in accordance with claim 1 wherein said pattern comprises a land and an active region and a plurality of said lines connected electrically in parallel between said land and active region.
FIELD OF THE INVENTION
This application is a continuation of application Ser. No. 098,979, filed Nov. 30, 1979, now abandoned.
US Referenced Citations (10)
Non-Patent Literature Citations (3)
Entry |
IBM Technical Disclosure Bulletin; Aluminum Land Metallurgy with Copper on the Surface; by Daley, vol. 13, No. 6, Nov. 1970, p. 1735. |
IBM Technical Disclosure Bulletin; Improving the Resistance to Electromigration of Al-Cu Stripes; by D'Heurle; vol. 13, No. 9, Feb. 1971, p. 2492. |
IBM Technical Disclosure Bulletin; Reduced Electromigration Damage in Al-Cu Stripes; by Rosenberg; vol. 13, No. 12, May 1971, pp. 3826+3827. |
Continuations (1)
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Number |
Date |
Country |
Parent |
98979 |
Nov 1979 |
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