The disclosure relates to a spray head, a chemical vapor deposition device, and a working method of the chemical vapor deposition device.
In manufacture of integrated circuits (IC), a chemical vapor deposition (CVD) process is mainly adopted to form a thin layer or a film on a semiconductor substrate (such as a wafer). In the chemical vapor deposition process, the semiconductor substrate is exposed to the precursor gas, the precursor gas reacts on a surface of the semiconductor substrate, and a reaction product is deposited on the semiconductor substrate.
According to the embodiments, a first aspect of the disclosure provides a spray head. The spray head includes a shell. The shell includes a first end and a second end arranged opposite to each other. The first end of the shell is provided with an air inlet, and the second end of the shell is provided with an air outlet panel. A surface of the air outlet panel is provided with a plurality of air outlet holes. A middle portion of the surface of the air outlet panel is farther away from the first end than an edge portion of the air outlet panel.
According to the embodiments, a second aspect of the disclosure provides a chemical vapor deposition device. The chemical vapor deposition device includes a spray head, and further includes a casing configured to provide a vacuum environment, and a carrier platform configured to mount a semiconductor substrate. The spray head and the carrier platform are arranged in the casing, and the air outlet panel faces the carrier platform. The spray head includes a shell. The shell includes a first end and a second end arranged opposite to each other. The first end of the shell is provided with an air inlet, and the second end of the shell is provided with an air outlet panel. A surface of the air outlet panel is provided with a plurality of air outlet holes. A middle portion of the surface of the air outlet panel is farther away from the first end than an edge portion of the air outlet panel
According to the embodiments, a third aspect of the disclosure provides a working method of a chemical vapor deposition device. The working method includes the following operations. A uniformity of a film deposited on a semiconductor substrate is correspondingly adjusted by adjusting a degree of a middle portion of a surface of an air outlet panel at a second end of a shell of a spray head of the chemical vapor deposition device farther away from the first end of the shell than an edge portion of the air outlet panel. Alternatively, a uniformity of a film deposited on a semiconductor substrate is correspondingly adjusted by adjusting a height difference between a middle portion of a surface of an air outlet panel at a second end of a shell of a spray head of the chemical vapor deposition device and an edge portion of the air outlet panel.
The details of one or more embodiments of the disclosure are set forth in the accompanying drawings and description below. Other features and advantages of the disclosure will be apparent from the specification, the accompanying drawings, and the claims.
The accompanying drawings, which constitute a part of the disclosure, are used to provide a further understanding of the disclosure. The illustrative embodiments of the disclosure as well as the illustrations thereof, which are used for explaining the disclosure, do not constitute improper definitions on the disclosure.
In order to describe the technical solutions in the embodiments of the disclosure more clearly, the accompanying drawings required to be used in the embodiments of the disclosure will be simply introduced below. Apparently, the accompanying drawings in the following description show merely some embodiments of the disclosure, and persons of ordinary skill in the art may still derive other drawings from these accompanying drawings without creative effort.
In an actual deposition process, a film deposited on a semiconductor substrate with a flat surface generally has poor uniformity. The non-uniformity of the film deposited on the semiconductor substrate may affect the subsequent process, for example, the etching is non-uniform or the chemical grinding of the semiconductor substrate is non-uniform. Finally, the quality of a semiconductor product may be affected.
In order to make the above-mentioned purposes, features and advantages of the disclosure more apparent and understandable, the specific implementations of the disclosure will be described in detail below with reference to the accompanying drawings. Many specific details are set forth in the following description in order to fully understand the disclosure. However, the disclosure can be implemented in many other ways different from those described herein, and those skilled in the art can make similar improvements without departing from the conception of the disclosure. Therefore, the disclosure is not limited by the specific implementations disclosed below.
Generally, a gas outlet surface of a spray head of a traditional chemical vapor deposition device is a plane arranged parallel to a semiconductor substrate. The gas outlet surface of the spray head directly faces the semiconductor substrate, the gas discharged from the gas outlet surface of the spray head reacts on the surface of the semiconductor substrate, and the reaction products are deposited on the semiconductor substrate. However, the film deposited on the surface of the semiconductor substrate is thin in the middle portion of the film and is thick in the edge portion of the film.
In this embodiment, a sub-atmospheric pressure chemical vapor deposition (SACVD) device is taken as an example. In addition, a gas chemical vapor deposition device may also be used. By providing a spray head with a special shape, the uniformity of the deposited film is improved.
Based on this, referring to
According to the spray head 10 described above, when the chemical vapor deposition process is performed on a semiconductor substrate 30 (shown in
It should be noted that according to the chemical vapor deposition tests performed under the condition that the degrees of the middle portion of the air outlet panel 113 farther away from the semiconductor substrate 30 than the edge portion are different, when the middle portion of the air outlet panel 113 is closer to the semiconductor substrate 30 than the edge portion, the thickness of the middle part of the film deposited on the surface of the semiconductor substrate 30 may be relatively increased.
Referring to
Referring to
Optionally, the air outlet panel 113 may also be of a structure with other irregular shapes, as long as the middle portion of the surface of the air outlet panel 113 is farther away from the first end than the edge portion of the air outlet panel 113. Herein, the structure of the air outlet panel is limited to a structure with a cone shape or a circular truncated cone shape.
Referring to
Referring to
Further, the driving assembly 12 includes a nut 121 arranged at the first end, and a screw stem 122 cooperating with the nut 121. One end of the screw stem 122 extends out of the shell 11, and another end of the screw stem 122 extends into the shell 11 and is connected to the middle portion of the air outlet panel 113.
As an example, unlike the combined structure in which the nut 121 and the screw stem 122 cooperates with each other, the driving assembly 12 includes a push-pull rod. The push-pull rod penetrates through the shell 11 and extends into the shell 11, and an end of the push-pull rod is connected to the middle portion of the air outlet panel 113. As another example, unlike the combined structure in which the nut 121 and the screw stem 122 cooperates with each other, the driving assembly 12 includes a retractable adjusting rod arranged in the shell 11. An end of the retractable adjusting rod is connected to the middle portion of the air outlet panel 113.
Referring to
It should be noted that the structure of the first pushing assembly 13 is similar to the structure of the driving assembly 12 in the above embodiment. For example, a nut 121 and a screw stem 122 cooperating with the nut 121 are adopted, which is not repeated herein.
It should be noted that in order to improve the uniformity of the film deposited on the semiconductor substrate 30, the air outlet holes 114 are uniformly arranged on the peripheral panel 1131 and the first middle panel 1132. In addition, the air outlet holes 114 may or may not be provided on the wall of the first windshield sleeve 1134, which is not limited herein.
It should be noted that the wall of the first windshield sleeve 1134 functions to allow the gas entering from one end of the first windshield sleeve 1134 to be directed to the other end of the first windshield sleeve 1134, and to be discharged outward from the air outlet holes 114 on the first middle panel 1132.
In an embodiment, in order to ensure a better moving effect of the first windshield sleeve at the first movable opening 1133, the outer wall of the first windshield sleeve is provided with for example a guide rib (not shown in the figures), and the wall of the first movable opening 1133 is provided with for example a recess (not shown in the figures) slidably cooperating with the guide rib. In addition, in another embodiment, the first windshield sleeve is made as a retractable sleeve, one end of the sleeve is connected to the wall of the first movable opening 1133, and the other end of the sleeve is arranged around the edge of the first middle panel 1132 in a circumferential direction. When the first pushing assembly 13 pushes the first middle panel 1132, the sleeve is correspondingly elongated or contracted.
Referring to
Similar to the first windshield sleeve 1134, the wall of the second windshield sleeve 1137 functions to allow gas entering from one end of the second windshield sleeve 1137 to be directed to the other end of the second windshield sleeve 1137, and to be discharged outward from air outlet holes 114 on the second middle panel 1135.
Referring to
It should be noted that the second pushing assembly 14 and the third pushing assembly 15 are arranged similar to the first pushing assembly 13, which will not be repeated herein. The second windshield sleeve 1137 and the third windshield sleeve 11391 are arranged similar to the first windshield sleeve 1134, which will not be repeated herein.
It should be noted that if the number of the middle panels of the air outlet panel 113 is larger, and the middle panels are sequentially sleeved in one another from the periphery portion to the middle portion of the air outlet panel, it is beneficial to improving the uniformity of the film deposited on the surface of the semiconductor substrate 30. The number of the middle panels of the air outlet panel 113 is not limited to the first middle panel 1132, the second middle panel 1135 and the third middle panel 1138. There may also be a fourth middle panel, a fifth middle panel and the like, which may be set according to actual requirements. In addition, the shape of each panel is not limited to a rectangular shape, and other shapes such as a cone shape or a hemisphere shape are also suitable.
Referring to
In this way, by adjusting the angle between the two rotating panels 11392, the degree of the connecting portion of the two rotating panels 11392 (corresponding to the middle portion of the air outlet panel 113) farther away from the first end than the edge portion may be adjusted.
Referring to
It should be noted that the structure of each moving assembly 16 is similar to the structure of the driving assembly 12 in the above embodiment. For example, a nut 121 and a screw stem 122 cooperating with the nut 121 are adopted, which will not be repeated herein.
Referring to
In an embodiment, the shell 11 is connected to an air inlet pipe 17. One end of the air inlet pipe 17 communicates with the air inlet 111, another end of the air inlet pipe 17 is configured to be connected to other gas supply devices. The gas supply device delivers the gas into the shell 11 through the air inlet pipe 17.
It should be noted that, in infringement contrast, the “air inlet pipe 17” may be “a part of the shell 11”, that is, the “air inlet pipe 17” is integrally formed with “the other parts of the shell 11”. Alternatively, the “air inlet pipe 17” may also be a separate component which can be separated from “the other parts of the shell 11”, that is, the “air inlet pipe 17” may be manufactured independently, and then be integrally formed with “the other parts of the shell 11”. As shown in
Referring to
According to the above-mentioned chemical vapor deposition device, when chemical vapor deposition process is performed on the semiconductor substrate 30, the reaction gas enters the inner cavity of the shell 11 through the air inlet 111, is discharged through the air outlet holes 114 of the air outlet panel 113, and is blown to the semiconductor substrate 30 to be deposited on the surface of the semiconductor substrate 30, so as to form a film. Since the middle portion of the air outlet panel 113 is farther away from the first end than the edge portion, the middle portion of the air outlet panel 113 is closer to the semiconductor substrate 30 than the edge portion of the air outlet panel 113. Compared with a traditional flat air outlet panel 113, the thickness of the middle part of the film deposited on the semiconductor substrate 30 may be relatively increased, so that the uniformity of the film deposited on the surface of the semiconductor substrate 30 may be improved.
The chemical vapor deposition device may be a plasma-enhanced chemical vapor deposition (PECVD) device, an atmospheric pressure chemical vapor deposition (atmospheric pressure CVD) device, or a metal organic chemical vapor deposition (metal organic CVD) device.
It should be noted that, specifically, the carrier platform 40 is, for example, a suction cup. A diameter of the suction cup is substantially the same as a diameter of the spray head 10. The suction cup is movable vertically along an axis. The movable carrier platform 40 is configured to adjust its position in a vacuum chamber. A heating system or a cooling system may be provided in the carrier platform 40, so as to heat or cool the semiconductor substrate 30 and/or to heat or cool the wall of the vacuum chamber. The plasma-enhanced chemical vapor deposition process is a process that may deposit films of various materials on the semiconductor substrate 30 at a temperature lower than the temperature of the standard chemical vapor deposition (CVD) process. A direct current (DC) power supply or a radio frequency (RF) power supply may be coupled to the vacuum chamber to generate plasma during the plasma-enhanced chemical vapor deposition process. In the plasma-enhanced chemical vapor deposition process, deposition is realized by introducing the reactive gas between parallel electrodes (RF-energized electrodes or DC electrodes and grounded electrodes). Alternatively, the chamber may have a coil to generate inductively coupled plasma with a high density. In any case, the spray head 10 in the above embodiment plays an important role in the uniformity of the obtained film. Capacitive coupling between electrodes excites the reactive gas into plasma, which initiates a chemical reaction and causes the reaction product to be deposited on the semiconductor substrate 30. The semiconductor substrate 30 placed on the grounded electrode may be heated to 250° C. to 350° C., depending on the specific film requirements.
In contrast, standard chemical vapor deposition without plasma excitation may require higher temperatures, such as being heated to a range from 600° C. to 800° C. Since the temperature of chemical vapor deposition may damage the device being manufactured, a lower deposition temperature is critical in many applications. Films generally deposited through the plasma-enhanced chemical vapor deposition process are made of silicon nitride (SixNy), silicon dioxide (SiO2), silicon oxynitride (SiOxNy), silicon carbide (SiC), and amorphous silicon (α-Si). Silane (SiH4) (silicon source gas) is mixed with oxygen source gas to form silicon dioxide, or silane (silicon source gas) is mixed with nitrogen source gas to form silicon nitride. In some embodiments, an oxide layer is formed by using a tetraethylorthosilicate (TEOS) material through the plasma-enhanced chemical vapor deposition process (that is, a plasma enhanced TEOS (PETEOS) process). By plasma excitation, a high deposition rate may be obtained through tetraethoxysilane/oxygen.
Referring to
In an embodiment, a working method of the chemical vapor deposition device according to any of the above embodiments includes the following operations. A uniformity of a film deposited on a semiconductor substrate 30 is correspondingly adjusted by adjusting a degree of a middle portion of a surface of an air outlet panel 113 farther away from the first end than the edge portion of the air outlet panel. Alternatively, a uniformity of a film deposited on a semiconductor substrate 30 is correspondingly adjusted by adjusting a height difference between a middle portion of a surface of an air outlet panel 113 and an edge portion of the air outlet panel 113.
With the working method of the chemical vapor deposition device, compared with a traditional flat air outlet panel 113, the thickness of the middle part of the film deposited on the semiconductor substrate 30 may be relatively increased, so that the uniformity of the film deposited on the surface of the semiconductor substrate 30 may be improved.
The technical features of the embodiments described above can be arbitrarily combined. In order to make the description simple, not all the possible combinations of the technical features in the above embodiments are completely described. However, all of the combinations of these technical features should be considered as within the scope described in the present specification as long as there is no contradiction in the combinations of these technical features.
The above embodiments merely illustrate several implementations of the disclosure, and the description thereof is specific and detailed, but they are not constructed as limiting the patent scope of disclosure. It should be noted that a number of variations and improvements made by those of ordinary skill in the art without departing from the conception of the disclosure are within the protection scope of the disclosure. Therefore, the patent protection scope of the present disclosure should be subject to the appended claims.
In the description of the disclosure, it should be noted that terminologies of “central”, “longitudinal”, “transversal”, “length”, “width”, “thickness”, “upper”, “lower”, “front”, “rear”, “left”, “right”, “vertical”, “horizontal”, “top”, “bottom”, “inner”, “outer”, “clockwise”, “counterclockwise”, “axial”, “radial”, “circumferential”, and the like that indicate relations of directions or positions are based on the relations of directions or positions shown in the drawings, which are only to facilitate description of the disclosure and to simplify the description of the disclosure, rather than to indicate or imply that the referred device or element is limited to the specific direction or to be operated or configured in the specific direction. Therefore, the above-mentioned terminologies shall not be interpreted as confine to the present disclosure.
In addition, terms “first” and “second” are only adopted for description and should not be understood to indicate or imply relative importance or implicitly indicate the number of indicated technical features. Therefore, a feature defined by “first” and “second” explicitly or implicitly indicates inclusion of at least one such feature. In the description of the disclosure, “multiple” means two or more, for example, two, three and the like, unless otherwise limited definitely and specifically.
In the disclosure, unless otherwise definitely specified and limited, terms “install”, “mutually connect”, “connect”, “fix” and the like should be broadly understood. For example, the terms may refer to fixed connection and may also refer to detachable connection or integration. The terms may refer to mechanical connection and may also refer to electrical connection. The terms may refer to direct mutual connection, may also refer to indirect connection through a medium and may refer to communication in two components or an interaction relationship of the two components. For those of ordinary skill in the art, specific meanings of these terms in the disclosure can be understood according to a specific condition.
In the disclosure, unless otherwise definitely specified and limited, a first feature being “above” or “below” a second feature may include the first feature and the second feature being in direct contact, or the first feature and the second feature being in contact through an intermediary. Moreover, the first feature being “over”, “above”, and “on” the second feature may be that the first feature is right above or not right above the second feature, or merely means that the level of the first feature is higher than that of the second feature. The first feature being “under”, “below”, and “beneath” the second feature may be that the first feature is directly below or not directly below the second feature, or merely means that the level of the first feature being lower than that of the second feature.
It should be noted that when an element is referred to as being “fixed to” or “disposed on” another element, it can be directly on the other element or an intervening element may also be present. When an element is referred to as being “connected” to another element, it can be directly connected to the other element or an intervening element may be present concurrently. The terms “vertical”, “horizontal”, “upper”, “lower”, “left”, “right”, and similar expressions used herein are for illustrative purposes only and do not mean the only implementations.
Number | Date | Country | Kind |
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202010816497.X | Aug 2020 | CN | national |
This is a continuation application of International Patent Application No. PCT/CN2021/101428, filed on Jun. 22, 2021, which claims priority to Chinese Application No. 202010816497.X, filed on Aug. 14, 2020 and entitled “SPRAY HEAD, CHEMICAL VAPOR DEPOSITION DEVICE, AND WORKING METHOD OF CHEMICAL VAPOR DEPOSITION DEVICE”. The disclosures of International Patent Application No. PCT/CN2021/101428 and Chinese Application No. 202010816497.X are incorporated by reference herein in their entireties.
Number | Date | Country | |
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Parent | PCT/CN2021/101428 | Jun 2021 | US |
Child | 17409921 | US |