Sputter Deposition System and Methods of Use

Abstract

The present invention relates a physical vapor deposition (PVD) system. e.g. a planetary system, for forming one or more layers of a coating material on a substrate and for treating, or modifying, the substrate surface, which can include the surface of the substrate or a deposited layer of coating material thereon. The PVD system includes a single vacuum (or process) chamber having an ion source and at least one PVD source of the coating material. The ion source, such as a linear ion source, is configured to emit a beam of energetic particles at a substrate for surface modification of the substrate surface, for example, to provide film densification, etching, cleaning, surface smoothing, and/or oxidation thereof. The PVD source(s) of the coating material deposits one or more layers of coating material(s) on the substrate. The uniformity of substrate surface modification and the thickness uniformity of the deposited layers can be maintained by velocity profiling of the rotating substrate within the vacuum chamber.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and, together with a general description of the invention given above, and the detailed description of the embodiments given below, serve to explain the principles of the invention.

FIG. 1 is a perspective view of one embodiment of the sputter deposition system in accordance with the present invention;

FIG. 2 is a schematic plan view of the vacuum chamber of FIG. 1;

FIG. 3 is a schematic cross-sectional view of FIG. 2 taken along line 3-3; and

FIG. 4 is a cross-sectional view of a coated substrate in accordance with a method of the present invention.

Claims

1. A system for forming a layer of a coating material on a substrate, comprising: a vacuum chamber including an ion source configured to emit a beam of energetic particles, and at least one physical vapor deposition source of the coating material for depositing the layer on the substrate; anda transport mechanism configured to support the substrate inside the vacuum chamber, the transport mechanism further configured to move the substrate between a first position spaced from the ion source and a second position spaced from the physical vapor deposition source;wherein the vacuum chamber further includes a treatment zone across which the substrate is exposed to the beam of energetic particles from the ion source when the substrate is supported at the first position and a deposition zone across which the substrate is exposed to the coating material from the physical vapor deposition source when the substrate is supported at the second position.

2. The system of claim 1 wherein the physical vapor deposition source further comprises a magnetron sputtering apparatus with a sputter target composed of the coating material.

3. The system of claim 1 wherein the vacuum chamber further includes an azimuthal axis, and the transport mechanism further includes an arm rotatable about the azimuthal axis and a substrate holder attached to the arm at a radius from the azimuthal axis, the substrate holder supporting the substrate at the radius as the arm rotates about the azimuthal axis to move the substrate holder to intersect the deposition zone and the treatment zone.

4. The system of claim 3 further including a processor in communication with the transport mechanism, the processor operative to control the transport mechanism to rotate the arm about the azimuthal axis such that the substrate holder moves through the treatment zone at first and second angular velocities.

5. The system of claim 4 wherein the substrate holder includes a central rotation axis and is further configured to spin the substrate about the central rotation axis as the arm moves the substrate holder to intersect the treatment zone.

6. The system of claim 4 further including a processor in communication with the transport mechanism, the processor operative to control the transport mechanism to rotate the arm about the azimuthal axis such that the substrate holder moves through the deposition zone at first and second angular velocities.

7. The system of claim 6 wherein the substrate holder includes a central rotation axis and is further configured to spin the substrate about the central rotation axis as the arm moves the substrate holder to intersect the deposition zone and the treatment zone.

8. The system of claim 1 further including an oxygen inlet associated with the treatment zone of the vacuum chamber for oxidizing a controlled depth of the layer of coating material on the substrate.

9. The system of claim 1 wherein the ion source is a linear ion source for which the beam of energetic particles is substantially uniform in at least one dimension across the treatment zone.

10. A method for treating a substrate, comprising: a) directing coating material to a deposition zone defined in a vacuum chamber;b) exposing the substrate to the coating material in the deposition zone to form a layer comprising the coating material on the substrate;c) directing a beam of energetic particles to a treatment zone defined in the vacuum chamber; andd) exposing the layer on the substrate to the energetic particles in the treatment zone.

11. The method of claim 10 further comprising moving the substrate through the deposition zone and moving the substrate through the treatment zone.

12. The method of claim 11 wherein moving the substrate through the treatment zone further comprises: rotating the substrate about an azimuthal axis of the vacuum chamber while the layer is exposed to the energetic particles in the treatment zone.

13. The method of claim 12 wherein rotating the substrate about the azimuthal axis further comprises: rotating the substrate about the azimuthal axis at first and second angular velocities while the layer is exposed to the energetic particles in the treatment zone.

14. The method of claim 13 further comprising: spinning the substrate about a central rotation axis perpendicular to the surface of the substrate while the substrate is rotated about the azimuthal axis through the treatment zone.

15. The method of claim 12 wherein moving the substrate through the deposition zone further comprises: rotating the substrate about an azimuthal axis of the vacuum chamber while the substrate is exposed to the coating material in the deposition zone.

16. The method of claim 15 wherein rotating the substrate about the azimuthal axis while the substrate is exposed to the coating material in the deposition zone and while the layer is exposed to the energetic particles in the treatment zone, respectively, further comprises: rotating the substrate about the azimuthal axis through the deposition zone at first and second angular velocities while the substrate is exposed to the coating material, androtating the substrate about the azimuthal axis at first and second angular velocities while the layer is exposed to the energetic particles in the treatment zone.

17. The method of claim 16 further comprising: spinning the substrate about a central rotation axis perpendicular to the surface of the substrate as the substrate is rotated about the azimuthal axis through the deposition zone and the treatment zone.

18. The method of claim 10 wherein exposing the layer on the substrate to the energetic particles in the treatment zone to treat the layer further comprises: exposing the layer on the substrate to the energetic particles and an oxygen atmosphere in the treatment zone to oxidize a controlled depth of the layer.

19. A method for treating a substrate comprising: a) directing a beam of energetic particles to a treatment zone defined in the vacuum chamber;b) exposing the surface of the substrate to the energetic particles in the treatment zone;c) directing coating material to a deposition zone defined in a vacuum chamber; andd) exposing the surface of the substrate to the coating material in the deposition zone to form a layer comprising the coating material.

20. The method of claim 19 further comprising moving the substrate through the treatment zone and moving the substrate through the deposition zone.

21. The method of claim 20 wherein moving the substrate through the treatment zone further comprises: rotating the substrate about an azimuthal axis of the vacuum chamber while the substrate surface is exposed to the energetic particles in the treatment zone.

22. The method of claim 21 wherein rotating the substrate about the azimuthal axis further comprises: rotating the substrate about the azimuthal axis at first and second angular velocities while the surface of the substrate is exposed to the energetic particles in the treatment zone.

23. The method of claim 22 further comprising: spinning the substrate about a central rotation axis perpendicular to the substrate surface while the substrate is rotated about the azimuthal axis through the treatment zone.

24. The method of claim 21 wherein moving the substrate through the deposition zone further comprises: rotating the substrate about an azimuthal axis of the vacuum chamber while the surface of the substrate is exposed to the coating material in the deposition zone.

25. The method of claim 24 wherein rotating the substrate about the azimuthal axis while the surface of the substrate is exposed to the energetic particles in the treatment zone and while the surface of the substrate is exposed to the coating material in the deposition zone, respectively, further comprises: rotating the substrate about the azimuthal axis at first and second angular velocities while the surface of the substrate is exposed to the energetic particles in the treatment zone; androtating the substrate about the azimuthal axis through the deposition zone at first and second angular velocities while the surface of the substrate is exposed to the coating material.

26. The method of claim 25 further comprising: spinning the substrate about a central rotation axis perpendicular to the surface of the substrate as the substrate is rotated about the azimuthal axis through the treatment zone and the deposition zone.