The present invention relates to a stamper according to an imprint technology, an imprint device, a product processed by an imprint device, a device for manufacturing a product processed by an imprint device, and a method for manufacturing a product processed by an imprint device and, more particularly, to a stamper, an imprint device, a device for manufacturing a product processed by an imprint device, and a method for manufacturing a product processed by an imprint device, which are capable of precisely forming patterns, and a product processed by an imprint device, in which patterns are precisely formed.
In recent years, it is expected that hard disc drives or LSIs (Large Scale Integrations) such as high-frequency devices will be manufactured in the future using patterned medias. For example, use of the hard disc drives has been increased with intention to be used for servers or computers and, moreover, has been increased for various applications, such as household hard disc recorders and AV reproduction appliances. In addition, capacities of the hard disc drives tend to be increased according to digitalization in various applications.
The increase of the capacities results in an increase in record densities of media discs. One of technologies increasing the record densities of the media discs is a patterned media. As the patterned medias, there are cited two patterned medias, namely, a discrete track media and a bit-patterned media, as shown in
For the formation of patterns, a process which employs a nanoimprint technology is seen as promising. The nanoimprint technology is shown in
In the nanoimprint technology, it is necessary to precisely form fine patterns. In a case where patterns are evenly disposed and a difference of a duty ratio of an uneven distribution or concavity and convexity is not present in fine patterns to be formed, as in photonic crystal patterns whose purpose is to provide a high luminance to an LED product shown in
However, when as shown in
In the base film removing process in Step 2, the etch process is performed using the plasma gas 17, to thereby remove all the base films BM, so that the base films BM are removed with a maximum film thickness (Step 2). Consequently, processing time becomes long. If the processing time becomes long, throughput is first reduced. Secondly, overetch occurs and a height and width of each pattern is reduced as shown in Step 3.
Therefore, a first object of the present invention is to provide a stamper or imprint device which can reduce variation in base film thicknesses.
A second object of the present invention is to provide a product processed by an imprint device, which has precisely fine patterns, and a device for manufacturing a product processed by an imprint device, and a method for manufacturing a product processed by an imprint device, which can form precisely fine patterns.
In order to achieve the above-mentioned objects, the present invention has the following features.
A first feature of the present invention lies in providing a stamper which has convexly and concavely patterns on a surface thereof transfers the convexly and concavely patterns into a formation material which is applied onto a surface of a substrate of a product processed, an imprint device which, using the stamper, transfers the patterns into the formation material applied onto the surface of the substrate which finally becomes the product processed, a device and a method for manufacturing the product by etching processing using the imprint device, and a product processed, wherein the stamper includes a dummy pattern which is unnecessary for fulfilling a function of the product which is processed and made from the substrate of the product processed.
Moreover, a second feature of the present invention lies in providing the dummy pattern which is a pattern which is provided in addition to regular patterns which fulfill the function of the product processed
Moreover, a third feature of the present invention lies in providing the dummy pattern which planarly enlarges the regular patterns fulfilling the function of the product processed.
Moreover, a fourth feature of the present invention lies in providing the dummy pattern which is a pattern having a depth more than a depth required for the regular patterns fulfilling the function of the product processed.
Moreover, a fifth feature of the present invention lies in providing the product processed, which is a magnetic disc having concentrically circular shaped regular pattern having servo patterns and data on a doughnut-shaped disc, wherein the transfer is performed by transferring the dummy pattern, which is provided in addition to the regular patterns fulfilling the function of the product processed, into inside and outside regions of the doughnut-shaped disc, or into the regular pattern regions.
Moreover, a sixth feature of the present invention lies in providing the product processed, which is a SAW device that is a high frequency device, wherein the dummy pattern which is provided in addition to the regular patterns fulfilling the function of the product processed is transferred into a filter portion which the SAW has.
Moreover, a seventh feature of the present invention lies in providing the product processed, which is a SAW device that is a high frequency device, wherein the dummy pattern which planarly enlarges the regular patterns fulfilling the function of the product processed is transferred into at least one of an electrode pad portion and an earth portion which the SAW has.
According to the present invention, it is possible to provide a stamper or an imprint device which can reduce variation of a base film thickness.
Moreover, according to the present invention, it is possible to provide a product processed which has precisely fine patterns, and a device and method for manufacturing a product processed, which can manufacture a product processed which has precisely fine patterns.
Embodiments of the present invention will be explained hereinafter with reference to the drawings.
First referring to
The transfer mechanism upper section 60 holds the stamper 20 in a flat state. The light source 30 is a UV light source that serves as an energy source to harden the photohardening resin. Moreover, if the light source 30 is used as a heat source for the thermosetting resin, it is possible to harden the thermosetting resin. Incidentally, while the imprint device 1 according to this embodiment is provided with the light source 30, the light source 30 may be configured as a device which is independent from the imprint device.
On the other hand, the transfer mechanism lower section 70 holds a substrate 12 which finally becomes a product processed by the imprint device and has the resist P on a surface thereof, into which concave and convex patterns which the stamper 20 has are to be transferred.
Moreover, the stage 80 is a base on which the substrate 12 is carried. When the stamper 20 performs transfer with respect to the resist P, the resist P receivingly stops press of the stamper, so that the resist P is formed into an intended shape on the substrate 12. Incidentally, the stage 80 is provided in an interior thereof with a heat source 90 for heating and softening the resist P that is the thermosetting resin, when the transfer is performed with respect to the resist P.
Such an imprint device transfers the patterns of the stamper 20 into the resist P to form an etch mask. Thereafter, an etching process is performed by an etching device. Incidentally, the imprint device 1 may be provided with exposure device.
Moreover, contrary to the above-mentioned structure of the imprint device 1, the transfer mechanism lower section 70 may be arranged above the resist P and the transfer mechanism upper section 60 and the light source 30 may be arranged below the resist P. Alternatively, the above-mentioned structure may be inclined at angles of 90 degrees in a right or left direction in such a manner that the transfer mechanism upper section 60 and the light source 30 are located on the right (or left) side of the resist P and the transfer mechanism lower section 70 is located on the left (or right) side of the resist P. Moreover, as far as the stamper 20 can perform the transfer with respect to the resist P, a direction in which a push is applied by the stamper 20 is not limited to a vertical or horizontal direction and may be an optionally inclined direction. Since a thickness of the applied resist material is thin, its fluidity is reduced and, even if the resist material is inclined and pressed, the resist material does not flow and a portion of the resist material which is unable to be subjected to the transfer is not produced.
A feature of the present invention lies in causing a required amount of the resist in a forming surface forming regular patterns required to fulfill a function, or the thickness of a base film, to become even. In other words, making of the required amount of the resist even is to cause a ratio to become the same between an amount of a portion of the applied resist which is used to form the regular patterns and an amount of a portion of the applied resist which is used to form the base film.
In the following explanation, patterns which have dummy portions in order that the regular patterns are formed are referred to as to “dummy patterns”. Moreover, dummy patterns which are provided on the stamper 20 are denoted by reference sign 20P. Dummy patterns on an etch mask 15 which is formed on the resist P by the dummy patterns 20P are denoted by reference sign DP.
As processes to achieve the foregoing, there are generally cited the following three processes.
In the conventional process, as explained with reference to
On the other hand, in this embodiment-process, dummy patterns DP shown in black are provided, for example, at a region without a pattern and a sparse region with a duty ratio difference, as shown in Step 1. It can be variously contemplated what type of dummy pattern DP should be provided.
For example, in
While
Next, the resist amount is determined in such a manner that the base film thickness becomes as thin as possible.
By providing the dummy patterns DP in this way, the base film is thinned as shown in the Step 2, removing time of the base film is shortened, and improvement in throughput can be realized. If the base film BM is thinned to less than a predetermined thickness, the Step 2 can be omitted.
Moreover, if the removing time of the base film BM can be shortened, an overetch amount of the etch mask which depends on the removing time is reduced, reduction in the height and width of the etch mask 15 can be suppressed and precisely fine patterns can be formed.
According to the above-explained embodiment 1, it is possible to provide a stamper or an imprint device which can reduce variation of the base film thickness.
Moreover, according to the above-explained embodiment 1, it is possible to provide a product processed and having precisely fine patterns, a device for manufacturing a product processed and having precisely fine patterns, and a method for manufacturing a product processed and having precisely fine patterns.
A working example 1 is an example in which this embodiment 1 is applied to a magnetic disc which is employed as the product processed. The working example is shown in
The conventional magnetic disc 30J comprises a doughnut-shaped disc, a pattern region 31 with regular patterns 31P, having servo patterns and data, which are disposed in concentrically circular form on the doughnut-shaped disc, and no-pattern regions 32, 33, without patterns, which are located inside and outside the pattern region 31 as shown in leading views. Therefore, if imprint is performed using the same resist amount as the required amount for the pattern region 31, the required amount of the resist for the no-pattern regions 32, 33 is small, so that the base film thickness becomes thick.
On the other hand, in the working example 1 shown in
The gaps G serve to definitely distinguish the regular patterns 31P and the dummy patterns DP at the time of data processing. However, data may be distinguished between the regular patterns 31P and the dummy pattern DP according to the patterns. In this case, the gaps G may not be provided.
In the above-mentioned working example 1, the dummy patterns are provided at the no-pattern regions 32, 33. However, the embodiment 1 may be applied to regions in which the fine patterns of regular patterns 31P having the servo pattern and data are unevenly distributed, or the duty ratio is varied and sparseness occurs.
A working example 2 is an example in which the embodiment 1 is applied to a typical SAW (Surface Acoustic Wave) device 40 that is a high frequency device which is shown in
Next, referring to
In the embodiment 2, such regions having the large areas are enlarged, the dummy patterns 20P are provided at the stamper in such a manner that the required amount of the resist becomes even or the usage ratio of the mask becomes the same, and the dummy pattern DP are made at the etch mask 15.
A right side column in
A left side column in
In the conventional process, if the large area portions of the electrode pad portion 41 or the earth portion (not shown) are present as shown in the left side column of
On the other hand, in the embodiment 2-process, as shown in
When the thickness of the base film BM is made even, the removing time of the base film BM is shortened and improvement in the throughput can be realized. If the thickness of the base film BM can be made less than a predetermined thickness, Step 2 can be omitted. Moreover, if the removing time of the base film BM can be shortened, an overetch amount of the etch mask which depends upon the removing time is reduced, and reduction in the height and width of the etch mask can be suppressed.
In the foregoing, a level of enlarging of the dummy pattern DP is determined, for example, by providing the dummy pattern in such a manner that the usage ratio of the resist for the mask, which is the ratio of the amount of the resist to be used for the etch mask 15 in the amount of the resist applied in order to form spaced apart circuits, becomes the same. In this case, the level is determined, while considering a mask usage ratio of the resist for other adjacent circuits
In the embodiment 2, the dummy pattern which causes the regular patterns to be enlarged is provided, whereby it is possible to provide a stamper or an imprint device which can cause the variation in the base film thickness to be reduced.
Moreover, in the embodiment 2, the dummy pattern which causes the regular patterns to be enlarged is provided, whereby it is possible to provide a product processed having a precise fine pattern, and a device and method for manufacturing a product processed which has a precise fine pattern.
A working example 3 is an example in which the embodiment 2 is applied to the typical SAW device 40 which is the high frequency device shown in
In
The dummy pattern of the etch mask 15 which is formed of the resist on the substrate 12 for the product processed includes a dummy portion DPr shown in a grid form and regular patterns portion SPs shown by oblique lines. If the dummy portion shown in the grid form absorbs the extra resist, the height of the dummy pattern becomes DPs.
Thus, after the base film BM is etching processed, etching process is further performed in proportion to EH. Thereafter, the remaining dummy portion DPr is cleaned and removed.
Incidentally, if the respective patterns have heights more than heights shown in
In the embodiment 3, the height which allows the extra resist to be absorbed by the depths of the respective patterns of the stamper is set, whereby it is possible to provide a stamper or an imprint device which can reduce the variation in the base film thickness.
Moreover, in the embodiment 3, the dummy pattern which allows the depth of the regular patterns to be deeper is provided, whereby it is possible to provide a product processed and having precise fine patterns, and a device for manufacturing a product processed and a method for manufacturing a product processed which can provide a product processed and having precise patterns.
The magnetic disc manufacturing device 100 includes a resist application device 51 spin-coating resist onto a disc surface, an imprint device 1 including a stamping device 52 imprinting patterns onto a resist applied surface using a stamper having patterns such as servo information patterns and data tracks formed therein and an exposure device 53 performing exposure in a stamping state, an etching device 54 dryetching resist patterns as a mask and forming a groove in the disc surface, a non-magnetic layer formation device 55 causing a non-magnetic layer to be embedded in the groove, and a protective film formation device 56 forming a protective film on the disc surface.
By applying the imprint device 1 of the present invention to the magnetic disc manufacturing device explained above, the throughput of the magnetic disc manufacturing device can be improved.
According to the above-explained embodiment, it is possible to provide a magnetic disc having precise patterns, and a magnetic disc manufacturing device and a magnetic disc manufacturing method which can provide a magnetic disc having precise patterns.
While the present invention has been explained above using the magnetic disc as the product processed, the present invention can be also applied to a SAW or other product processed.
Moreover, while the present invention has been explained above using the discrete track media as the target, the present invention can be also applied to a bit-patterned media by providing dummy pattern formed by bits, or varying heights of the bits.
Number | Date | Country | Kind |
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2011-215000 | Sep 2011 | JP | national |