Claims
- 1. A partial reverse metal mask comprising a first pattern for transferring a second pattern, which is converted from the first pattern, on a metal layer on a substrate, wherein the first pattern is corresponding to a layout of the metal layer, and wherein the metal layer comprises:a plurality of first regions which are metal; a plurality of second regions which are a plurality of first metal spacers wherein a width of the first region is about 1 to 10 times of a linewidth of a fabrication process to be performed; and a plurality of third regions, which are a plurality of second metal spacers, wherein a width of the second region is about 0.8 to 1.2 times of a linewidth of a fabrication process to be performed.
- 2. The partial reverse metal mask of claim 1, wherein the steps of converting the first pattern to form the second pattern comprises:narrowing the first pattern till the third regions are erased; and widening the second regions till each of the second regions is connected to a neighboring second region of the second regions.
- 3. The partial reverse metal mask of claim 2, wherein the second regions and the third regions are narrowed by a first value of about 0.1 to 0.5 μm.
- 4. The partial reverse metal mask of claim 1, wherein the second regions are widened by a value equals to a sum of the first value and a width of a narrowest regions of the first regions interlacing with the second regions.
Priority Claims (1)
Number |
Date |
Country |
Kind |
87111845 |
Jul 1998 |
TW |
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CROSS-REFERENCE TO RELATED APPLICATION
This is a application of prior application Ser. No. 09/165,703 filed on Oct. 2, 1998, now U.S. Pat. No. 6,097,093, the disclosure of which is incorporated herein by reference.
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5442237 |
Hughes et al. |
Aug 1995 |
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Colgen et al. |
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5659201 |
Wollesen |
Aug 1997 |
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