Claims
- 1. A substantially hillock-free aluminum-containing film consisting of aluminum and oxygen.
- 2. The substantially hillock-free aluminum-containing film of claim 1, wherein said substantially hillock-free aluminum-containing film is formed by a method comprising sputter depositing aluminum metal on a substrate in the presence of hydrogen gas.
- 3. A flat panel display having at least one conductive component formed from a substantially hillock-free aluminum-containing film consisting of aluminum and oxygen.
- 4. The flat panel display of claim 3, wherein said substantially hillock-free aluminum-containing film is formed by a method comprising sputter depositing aluminum metal on a substrate in the presence of hydrogen gas.
- 5. A semiconductor device comprising at least one conductive component formed from a substantially hillock-free aluminum-containing film consisting of aluminum and oxygen.
- 6. The semiconductor device of claim 5, wherein said substantially hillock-free aluminum-containing film is formed by sputter depositing aluminum metal on a substrate in the presence of hydrogen gas.
- 7. An active matrix liquid crystal display, comprising:
a plurality of column buses, said plurality of column buses comprising a substantially hillock-free aluminum-containing column film consisting of aluminum and oxygen; and a plurality of row buses, said plurality of row buses comprising a substantially hillock-free aluminum-containing row film consisting of aluminum and oxygen.
- 8. The active matrix liquid crystal display of claim 7, wherein said substantially hillock-free aluminum-containing column film is sputter deposited from aluminum metal in the presence of hydrogen gas.
- 9. The active matrix liquid crystal display of claim 7, wherein said substantially hillock-free aluminum-containing row film is sputter deposited from aluminum metal in the presence of hydrogen gas.
- 10. A method of forming a substantially hillock-free aluminum-containing film, comprising:
placing a substrate in a vacuum deposition chamber, said vacuum deposition chamber including an aluminum-containing target therein; evacuating said vacuum deposition chamber; applying an electrical field between said aluminum-containing target and said substrate; and introducing argon gas and hydrogen gas into said vacuum deposition chamber.
- 11. The method of claim 10, further including maintaining said vacuum deposition chamber at a pressure between about 0.5 and 2.5 millitorr.
- 12. The method of claim 10, wherein said argon gas is introduced into said vacuum deposition chamber at a rate of between about 25 and 90 standard cubic centimeters per minute.
- 13. The method of claim 10, wherein said hydrogen gas is introduced into said vacuum deposition chamber at a rate of between about 50 and 400 standard cubic centimeters per minute.
- 14. The method of claim 10, wherein a ratio of argon gas to hydrogen gas is preferably between about 1:1 and 1:6.
- 15. The method of claim 10, wherein applying said electrical field between said aluminum-containing target and said substrate comprises applying direct current power of one polarity to said aluminum-containing target and of an opposing polarity to said substrate.
- 16. The method of claim 15, wherein said direct current power is between about 1 and 4 kilowatts.
CROSS-REFERENCE TO RELATED APPLICATIONS
[0001] This application is a continuation of application Ser. No. 09/570,879, filed May 15, 2000, pending, which is a divisional of application Ser. No. 09/290,532, filed Apr. 12, 1999, now U.S. Pat. No. 6,107,688, issued Aug. 22, 2000, which is a continuation of application Ser. No. 08/892,718, filed Jul. 15, 1997, now U.S. Pat. No. 5,969,423, issued Oct. 19, 1999.
Divisions (1)
|
Number |
Date |
Country |
Parent |
09290532 |
Apr 1999 |
US |
Child |
09570879 |
May 2000 |
US |
Continuations (2)
|
Number |
Date |
Country |
Parent |
09570879 |
May 2000 |
US |
Child |
10180847 |
Jun 2002 |
US |
Parent |
08892718 |
Jul 1997 |
US |
Child |
09290532 |
Apr 1999 |
US |