Nano-fabrication includes the fabrication of very small structures that have features on the order of 100 nanometers or smaller. One application in which nano-fabrication has had a sizeable impact is in the processing of integrated circuits. The semiconductor processing industry continues to strive for larger production yields while increasing the circuits per unit area formed on a substrate, therefore nano-fabrication becomes increasingly important. Nano-fabrication provides greater process control while allowing continued reduction of the minimum feature dimensions of the structures formed. Other areas of development in which nano-fabrication has been employed include biotechnology, optical technology, mechanical systems, and the like.
An exemplary nano-fabrication technique in use today is commonly referred to as imprint lithography. Exemplary imprint lithography processes are described in detail in numerous publications, such as U.S. Patent Publication No. 2004/0065976, U.S. Patent Publication No. 2004/0065252, and U.S. Pat. No. 6,936,194, all of which are hereby incorporated by reference.
An imprint lithography technique disclosed in each of the aforementioned U.S. patent publications and patent includes formation of a relief pattern in a formable liquid (polymerizable material) and transferring a pattern corresponding to the relief pattern into an underlying substrate. The substrate may be coupled to a motion stage to obtain a desired positioning to facilitate the patterning process. The patterning process uses a template spaced apart from the substrate and a formable liquid applied between the template and the substrate. The formable liquid is solidified to form a rigid layer that has a pattern conforming to a shape of the surface of the template that contacts the formable liquid. After solidification, the template is separated from the rigid layer such that the template and the substrate are spaced apart. The substrate and the solidified layer are then subjected to additional processes to transfer a relief image into the substrate that corresponds to the pattern in the solidified layer.
So that the present invention may be understood in more detail, a description of embodiments of the invention is provided with reference to the embodiments illustrated in the appended drawings. It is to be noted, however, that the appended drawings illustrate only typical embodiments of the invention, and are therefore not to be considered limiting of the scope.
Referring to the figures, and particularly to
Substrate 12 and substrate chuck 14 may be further supported by stage 16. Stage 16 may provide motion along the x-, y-, and z-axes. Stage 16, substrate 12, and substrate chuck 14 may also be positioned on a base (not shown).
Spaced-apart from substrate 12 is a template 18. Template 18 generally includes a mesa 20 extending therefrom towards substrate 12, mesa 20 having a patterning surface 22 thereon. Further, mesa 20 may be referred to as mold 20. Template 18 and/or mold 20 may be formed from such materials including, but not limited to, fused-silica, quartz, silicon, organic polymers, siloxane polymers, borosilicate glass, fluorocarbon polymers, metal, hardened sapphire, and/or the like. As illustrated, patterning surface 22 comprises features defined by a plurality of spaced-apart recesses 24 and/or protrusions 26, though embodiments of the present invention are not limited to such configurations. Patterning surface 22 may define any original pattern that forms the basis of a pattern to be formed on substrate 12.
Template 18 may be coupled to chuck 28. Chuck 28 may be configured as, but not limited to, vacuum, pin-type, groove-type, electromagnetic, and/or other similar chuck types. Exemplary chucks are further described in U.S. Pat. No. 6,873,087, which is hereby incorporated by reference. Further, chuck 28 may be coupled to imprint head 30 such that chuck 28 and/or imprint head 30 may be configured to facilitate movement of template 18.
System 10 may further comprise a fluid dispense system 32. Fluid dispense system 32 may be used to deposit polymerizable material 34 on substrate 12. Polymerizable material 34 may be positioned upon substrate 12 using techniques such as drop dispense, spin-coating, dip coating, chemical vapor deposition (CVD), physical vapor deposition (PVD), thin film deposition, thick film deposition, and/or the like. Polymerizable material 34 may be disposed upon substrate 12 before and/or after a desired volume is defined between mold 20 and substrate 12 depending on design considerations. Polymerizable material 34 may comprise a monomer mixture as described in U.S. Pat. No. 7,157,036 and U.S. Patent Publication No. 2005/0187339, all of which are hereby incorporated by reference.
Referring to
Either imprint head 30, stage 16, or both vary a distance between mold 20 and substrate 12 to define a desired volume therebetween that is filled by polymerizable material 34. For example, imprint head 30 may apply a force to template 18 such that mold 20 contacts polymerizable material 34. After the desired volume is filled with polymerizable material 34, source 38 produces energy 40, e.g., ultraviolet radiation, causing polymerizable material 34 to solidify and/or cross-link conforming to shape of a surface 44 of substrate 12 and patterning surface 22, defining a patterned layer 46 on substrate 12. Patterned layer 46 may comprise a residual layer 48 and a plurality of features shown as protrusions 50 and recessions 52, with protrusions 50 having thickness t1 and residual layer having a thickness t2.
The above-mentioned system and process may be further employed in imprint lithography processes and systems referred to in U.S. Pat. No. 6,932,934, U.S. Patent Publication No. 2004/0124566, U.S. Patent Publication No. 2004/0188381, and U.S. Patent Publication No. 2004/0211754, each of which is hereby incorporated by reference.
As illustrated in
The inner edge 62 of substrate 12 may be substantially centered about shaft 60 such that features of patterned layer 46 may be concentrically imprinted (e.g., con-centering). Shaft 60 and/or substrate 12, however, may have manufacturing variations. Such variations may provide for errors in centering. For example, as illustrated in
To reduce misalignment, substrate 12 may be biased from at least one point P of the inner edge 62 of substrate 12 by the radius difference ΔR between the diameter DS of shaft 60 and the inner diameter DI of substrate 12.
Point P may be determined using alignment marks and/or gratings in a known theta orientation. Use of alignment marks and/or grating are described in detail in U.S. application Ser. No. 12/175,258, U.S. Pat. No. 6,916,584, U.S. Pat. No. 7,027,156, and U.S. Pat. No. 7,136,150, all of which are hereby incorporated by reference. Alternatively, point P may be determined by a microscope.
Laser Biasing
As illustrated in
Using a known diameter DS of shaft 60, the radius difference ΔR between the diameter DS of shaft 60 and the inner diameter DI of substrate 12 may be determined. Using the radius difference ΔR, substrate 12 may be positioned and/or repositioned such that patterned features 50 may be concentrically imprinted in relation to shaft 60. For example, substrate 12 may be patterned in the manner in which substrate 12 will be positioned within a disk drive. Point P of inner edge 62 of substrate 12 may be adjacent to shaft 60, while a portion of the inner edge 62 of substrate 12 may be positioned a distance equal to ΔR from shaft 60, as illustrated in
Mechanical Bias
Referring to
Stabilizers 74 may be placed adjacent to the outer edge 76 of substrate 12 and/or the inner edge 62 of substrate 12. One or more stabilizers 74 may be moveable. Moveable stabilizers 74 may be capable of adjustment to provide for loading and unloading of substrate 12 to and/or from system 10.
Generally, stabilizers 74 may provide for at least three points of contact on substrate 12. For example, as illustrated in
In another example, as illustrated in
Stabilizers 74 may be integral or attachable to substrate chuck 14 and/or stage 16 (shown in
In an exemplary embodiment, at least one stabilizer 74 may be formed having dimensions comparable to a spindle and/or shaft 60. For example, shaft stabilizer 74 may be formed having a slightly smaller diameter DM than the inner diameter DI of substrate 12 (e.g., ˜19.9 mm for DI of ˜20 mm).
Stabilizers 74 may be formed having dimensions comparable to multiple spindles and/or shafts 60 as illustrated in
This application claims the benefit under 35 U.S.C. §119(e)(1) of U.S. Provisional Patent Application No. 61/111,107, filed Nov. 4, 2008, which is hereby incorporated by reference herein in its entirety.
Number | Name | Date | Kind |
---|---|---|---|
4569806 | Holster | Feb 1986 | A |
4995799 | Hayashi et al. | Feb 1991 | A |
5527497 | Kanome et al. | Jun 1996 | A |
6030556 | DePuydt et al. | Feb 2000 | A |
6081334 | Grimbergen et al. | Jun 2000 | A |
6081990 | Kuroba et al. | Jul 2000 | A |
6210609 | Takeda et al. | Apr 2001 | B1 |
6757116 | Curtiss | Jun 2004 | B1 |
6842229 | Sreenivasan et al. | Jan 2005 | B2 |
6873087 | Choi et al. | Mar 2005 | B1 |
6902853 | Sreenivasan et al. | Jun 2005 | B2 |
6916584 | Sreenivasan et al. | Jul 2005 | B2 |
6921615 | Sreenivasan et al. | Jul 2005 | B2 |
6922906 | Choi et al. | Aug 2005 | B2 |
6936194 | Watts | Aug 2005 | B2 |
6947244 | Kawaguchi et al. | Sep 2005 | B2 |
6954275 | Choi et al. | Oct 2005 | B2 |
7027156 | Watts et al. | Apr 2006 | B2 |
7070405 | Sreenivasan et al. | Jul 2006 | B2 |
7136150 | Sreenivasan et al. | Nov 2006 | B2 |
7170589 | Cherala et al. | Jan 2007 | B2 |
7186483 | Sreenivasan et al. | Mar 2007 | B2 |
7281921 | Watts et al. | Oct 2007 | B2 |
7292326 | Nimmakayala et al. | Nov 2007 | B2 |
7303383 | Sreenivasan et al. | Dec 2007 | B1 |
7311516 | Inoue | Dec 2007 | B2 |
7323130 | Nimmakayala et al. | Jan 2008 | B2 |
7670529 | Choi et al. | Mar 2010 | B2 |
7780893 | Sreenivasan et al. | Aug 2010 | B2 |
20040001266 | Kuo et al. | Jan 2004 | A1 |
20040149687 | Choi et al. | Aug 2004 | A1 |
20040163563 | Sreenivasan et al. | Aug 2004 | A1 |
20050064344 | Bailey et al. | Mar 2005 | A1 |
20050146078 | Chou et al. | Jul 2005 | A1 |
20050173072 | Mizuta | Aug 2005 | A1 |
20050269745 | Cherala et al. | Dec 2005 | A1 |
20050270516 | Cherala et al. | Dec 2005 | A1 |
20050271955 | Cherala et al. | Dec 2005 | A1 |
20060114450 | Nimmakayala et al. | Jun 2006 | A1 |
20060115999 | Sreenivasan et al. | Jun 2006 | A1 |
20060152835 | Bandic et al. | Jul 2006 | A1 |
20060279004 | Suehira et al. | Dec 2006 | A1 |
20070164458 | Ogino | Jul 2007 | A1 |
20070211592 | Sakurai et al. | Sep 2007 | A1 |
20070228609 | Sreenivasan et al. | Oct 2007 | A1 |
20070231421 | Nimmakayala et al. | Oct 2007 | A1 |
20070243655 | Schmid et al. | Oct 2007 | A1 |
20070285816 | Deeman et al. | Dec 2007 | A1 |
20080029931 | Tada et al. | Feb 2008 | A1 |
20080153312 | Sreenivasan et al. | Jun 2008 | A1 |
20080233331 | Thallner | Sep 2008 | A1 |
20090026657 | Nimmakayala et al. | Jan 2009 | A1 |
20090147237 | Schumaker et al. | Jun 2009 | A1 |
20090250840 | Selinidis et al. | Oct 2009 | A1 |
20100081010 | Tatsugawa et al. | Apr 2010 | A1 |
20100092599 | Selinidis et al. | Apr 2010 | A1 |
20110053088 | Usa et al. | Mar 2011 | A1 |
20110272096 | Serikawa et al. | Nov 2011 | A1 |
Number | Date | Country |
---|---|---|
WO03104898 | Dec 2003 | WO |
Number | Date | Country | |
---|---|---|---|
20100109202 A1 | May 2010 | US |
Number | Date | Country | |
---|---|---|---|
61111107 | Nov 2008 | US |